Fairchild Semiconductor KSH31CI Datasheet
©2002 Fairchild Semiconductor Corporation Rev. B3, October 2002
KSH31/31C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Electrical Characteristics
TC=25°C unless otherwise noted
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: KSH31
: KSH31C
40
100
V
V
V
CEO
Collector-Emitter Voltage
: KSH31
: KSH31C
40
100
V
V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 3 A
I
CP
Collector Current (Pulse) 5 A
I
B
Base Current 1 A
PC
Collector Dissipation (TC=25°C) 15 W
Collector Dissipation (T
a
=25°C) 1.56 W
T
J
Junction Temperature 150 °C
T
STG
Storage T emperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: KSH31
: KSH31C
I
C
= 30mA, IB = 0 40
100
V
V
I
CEO
Collector Cut-off Current
: KSH31
: KSH31C
V
CE
= 40V, IB = 0
V
CE
= 60V, IB = 0
50
50µAµA
I
CES
Collector Cut-off Current
: KSH31
: KSH31C
V
CE
= 40V, V
BE
= 0
V
CE
= 100V, V
BE
= 0
20
20µAµA
I
EBO
Emitter Cut-off Current V
BE
= 5V, IC = 0 1 mA
hFE
* DC Current Gain V
CE
= 4V, IC = 1A
V
CE
= 4V, IC = 3A
25
10 50
V
CE
(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 375mA 1.2 V
V
BE
(on) * Base-Emitter On Voltage V
CE
= 4A, IC = 3A 1.8 V
f
T
Current Gain Bandwidth Product V
CE
= 10V, IC = 500mA 3 MHz
KSH31/31C
General Purpose Amplifier
Low Speed Switching Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP31 and TIP31C
1.Base 2.Collector 3.Emitter
D-PAK I-PAK
11
©2002 Fairchild Semiconductor Corporation Rev. B3, October 2002
KSH31/31C
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Capacitance Figure 4. Turn On Time
Figure 5. Turn Off Time Figure 6. Safe Operating
0.01 0.1 1 10
1
10
100
1000
VCE = 2V
h
FE
, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
1E-3 0.01 0.1 1 10
0.01
0.1
1
10
IC = 10 I
B
VCE(sat)
VBE(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10 100
1
10
100
1000
C
ob
[pF], CAPACITANCE
VCB[V], COLLECTOR BASE VOLTAGE
0.01 0.1 1 10
0.1
1
tR, VCC=30V
tR, VCC=10V
tC = 10.I
B
tD, VBE(off)=2V
t
R
, t
D
[
µ
s], TURN ON TIME
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.1
1
t
STG
tF, VCC=30V
tC = 10.I
B
tF, VCC(off)=10V
t
F
,t
STG
[
µ
s], TURN OFF TIME
IC[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
KSH31
100
µ
s
500
µ
s
KSH31C
1ms
DC
ICP(max)
IC(max)
I
C
[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
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