©2002 Fairchild Semiconductor Corporation Rev. B3, October 2002
KSH30/30C
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Electrical Characteristics
TC=25°C unless otherwise noted
* Pulse Test: PW≤300ms, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: KSH30
: KSH30C
- 40
- 100
V
V
V
CEO
Collector-Emitter Voltage
: KSH30
: KSH30C
- 40
- 100
V
V
V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 1 A
I
CP
Collector Current (Pulse) - 3 A
I
B
Base Current - 0.4 A
PC
Collector Dissipation (TC=25°C) 15 W
Collector Dissipation (Ta=25°C) 1.56 W
T
J
Junction Temperature 150 °C
T
STG
Storage T emperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
V
CEO
(sus) Collector-Emitter Sustaining Voltage
: KSH30
: KSH30C
I
C
= - 30mA, IB = 0 - 40
- 100
V
V
I
CEO
Collector Cut-off Current
: KSH30
: KSH30C
V
CE
= - 40V , IB = 0
V
CE
= - 60V , IB = 0
- 50
- 50µAµA
I
CES
Collector Cut-off Current
: KSH30
: KSH30C
V
CE
= - 40V, V
BE
= 0
V
CE
= 100V, V
BE
= 0
- 20
- 20µAµA
I
EBO
Emitter Cut-off Current V
BE
= - 5V , IC = 0 - 1 mA
hFE
* DC Current Gain V
CE
= - 4V , IC = - 0.2A
V
CE
= - 4V , IC = - 1A
40
15 75
V
CE
(sat) * Collector-Emitter Saturation Voltage IC = - 1A, IB = - 125mA - 0.7 V
V
BE
(on) * Base-Emitter On Voltage V
CE
= - 4A, IC = - 1A - 1.3 V
f
T
Current Gain Bandwidth Product V
CE
= - 10V , IC = - 200mA 3 MHz
KSH30/30C
General Purpose Amplifier
Low Speed Switching Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP30 and TIP30C
1.Base 2.Collector 3.Emitter
D-PAK I-PAK
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