Fairchild Semiconductor KSH30C, KSH30 Datasheet
KSH30/30C
General Purpose Amplifier
Low Speed Switching Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP30 and TIP30C
PNP Epitaxial Silicon Transistor
11
D-PAK I-PAK
1.Base 2.Collector 3.Emitter
KSH30/30C
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
V
V
I
I
I
PC
CBO
CEO
EBO
C
CP
B
Collector-Base Voltage
: KSH30
: KSH30C
- 40
- 100
Collector-Emitter Voltage
: KSH30
: KSH30C
- 40
- 100
Emitter-Base Voltage - 5 V
Collector Current (DC) - 1 A
Collector Current (Pulse) - 3 A
Base Current - 0.4 A
Collector Dissipation (TC=25°C) 15 W
Collector Dissipation (Ta=25°C) 1.56 W
T
J
T
STG
Electrical Characteristics
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
(sus) Collector-Emitter Sustaining Voltage
V
CEO
: KSH30
: KSH30C
I
CEO
Collector Cut-off Current
: KSH30
: KSH30C
I
CES
Collector Cut-off Current
: KSH30
: KSH30C
I
EBO
hFE
V
(sat) * Collector-Emitter Saturation Voltage IC = - 1A, IB = - 125mA - 0.7 V
CE
(on) * Base-Emitter On Voltage V
V
BE
f
T
* Pulse Test: PW≤300ms, Duty Cycle≤2%
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
= - 30mA, IB = 0 - 40
I
C
V
= - 40V , IB = 0
CE
= - 60V , IB = 0
V
CE
= - 40V, V
V
CE
V
= 100V, V
CE
= - 5V, IC = 0 - 1 mA
BE
= - 4V, IC = - 0.2A
CE
= - 4V, IC = - 1A
V
CE
= - 4A, IC = - 1A - 1.3 V
CE
= - 10V , IC = - 200mA 3 MHz
CE
BE
BE
= 0
= 0
- 100
- 50
- 50µAµA
- 20
- 20µAµA
40
15 75
V
V
V
V
V
V
©2002 Fairchild Semiconductor Corporation Rev. B3, October 2002
Typical Characteristics
KSH30/30C
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Turn On Time
t
STG
tF, VCC= - 30V
tF, VCC= - 10V
10
1
s],TURN OFF TIME
0.1
µ
[
STG
, t
F
t
0.01
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
VCE = 2V
IC=10I
10
1
s],TURN ON T IME
µ
0.1
[
D
, t
R
t
0.01
-0.01 -0.1 -1 -10
tR, VCC= - 30V
tR, VCC= - 10V
tD , VBE(off)=2V
IC=10I
B
IC[A], COLLECTOR CURRENT
B
-100
-10
-1
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-1 -10 -100 -1000
100
µ
s
500
µ
s
1ms
DC
KSH30
KSH30C
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Turn Off Time Figure 4. Safe Operating Area
20
15
10
5
[W], POWER DISSIPATION
C
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B3, October 2002
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