Fairchild Semiconductor KSH3055I, KSH3055 Datasheet
KSH3055
General Purpose Amplifier
Low Speed Switching Applications
D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ -I “ Suffix)
• Electrically Similar to Popular KSE3055T
• DC Current Gain Specified to 10A
• High Current Gain - Bandwidth Product:
= 2MHz (MIN), IC = 500mA
f
T
NPN Epitaxial Silicon Transistor
11
D-PAK I-PAK
1.Base 2.Collector 3.Emitter
KSH3055
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage 70 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 5 V
Collector Current 10 A
Base Current 6 A
Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (T
=25°C) 1.75 W
a
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage IC = 30mA, IB = 0 60 V
CEO
I
CEO
I
CBO
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage IC = 4A, IB = 0.4A
V
CE
(on) * Base-Emitter On Voltage V
V
BE
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector Cut-off Current V
Collector Cut-off Current V
Emitter Cut-off Current V
*DC Current Gain V
Current Gain Bandwidth Product V
= 30V, IE = 0 50 µA
CE
= 70V, IE = 0 2 mA
CB
= 5V, IC = 0 0.5 mA
EB
= 4V, IC = 4A
CE
V
= 4V, IC = 10A
CE
= 10A, IB = 3.3A
I
C
= 4V, IC = 4A 1.8 V
CE
= 10V, IC = 500mA 2 MHz
CE
20 5100
1.1
8
V
V
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
Typical Characteristics
KSH3055
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
tD, VBE(off)=5V
t
R
10
1
s], TURN ON T IM E
µ
[
D
0.1
, t
R
t
VCE = 2V
VCC = 30V
IC = 10.I
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.1 1 10 100
VBE(sat)
VCE(sat)
IC = 10 I
B
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
10
B
1
s], TURN OFF TIME
µ
[
F
0.1
, t
STG
t
VCC = 30V
IC = 10.I
B
IB1 = I
B2
t
STG
t
f
0.01
0.01 0.1 1 10
IC[A], CO LLECTOR CURRENT
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 3. Turn On Time Figure 4. Turn Off Time
100
ICP(max)
10
IC(max)
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100
1ms
5ms
DC
VCE[V], COLLECTOR-EMITTER VOLTAGE
25
100
µ
s
500
µ
s
20
15
10
5
[W], POWER DISSIPATION
C
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
Loading...