Fairchild Semiconductor KSH2955 Datasheet
KSH2955
General Purpose Amplifier Low Speed
Switching Applications
D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ -I “ Suffix)
• Electrically Similar to Popular KSE2955T
• DC Current Gain Specified to 10A
• High Current Gain - Bandwidth Product:
= 2MHz (MIN), IC = -500mA
f
T
PNP Epitaxial Silicon Transistor
11
D-PAK I-PAK
1.Base 2.Collector 3.Emitter
KSH2955
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage - 70 V
Collector-Emitter Voltage - 60 V
Emitter-Base Voltage - 5 V
Collector Current - 10 A
Base Current - 6 A
Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (T
=25°C) 1.75 W
a
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage IC = - 30mA, IB = 0 -60 V
CEO
I
CEO
I
CBO
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage IC = - 4A, IB = - 0.4A
V
CE
(on) * Base-Emitter On Voltage V
V
BE
f
T
* Pulse Test: PW≤300ms, Duty Cycle≤2%
Collector Cut-off Current V
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
= - 30V, IE = 0 - 50 µA
CE
= - 70V, IE = 0 - 2 mA
CB
= - 5V, IC = 0 - 0.5 mA
EB
= - 4V, IC = - 4A
CE
V
= - 4V, IC = -10A
CE
20
5
100
- 1.1
= - 10A, IB = - 3.3A
I
C
= - 4V, IC = - 4A -1.8 V
CE
= - 10V, IC = - 500mA 2 MHz
CE
- 8
V
V
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
Typical Characteristics
KSH2955
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
t
R
t
D
VBE(off)=5V
s], TURN ON TIME
µ
[
D
,t
R
t
10
1
0.1
VCE=-2V
VCC=-30V
=10I
I
C
B
IB1=I
B2
VBE(sat)
VCE(sat)
IC=10I
B
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat),V
BE
-0.01
V
-0.1 -1 -10 -100
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
10
1
0.1
s], TURN OFF TIME
µ
[
STG
,t
F
t
VCC=-30V
=10I
I
C
B
IB1=I
B2
t
STG
t
F
0.01
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
0.01
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 3. Turn On Time Figure 4. Turn Off Time
-100
-10
-1
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-0.1 -1 -10 -100
1ms
5ms
DC
VCE[V], COLLECTOR EMITTER VOLTAGE
500
100
µ
25
µ
s
s
20
15
10
5
[W], POWER DISSIPATION
C
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
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