Fairchild Semiconductor KSH210 Datasheet
KSH210
D-PAK for Surface Mount Applications
• High DC Current Gain
• Low Collector Emitter Saturation Voltage
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
PNP Epitaxial Silicon Transistor
11
D-PAK I-PAK
1.Base 2.Collector 3.Emitter
KSH210
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage - 40 V
Collector-Emitter Voltage - 25 V
Emitter-Base Voltage - 8 V
Collector Current (DC) - 5 A
Collector Peck Current (Pulse) - 10 A
Base Current - 1 A
Collector Dissipation (TC = 25°C) 12.5 W
Collector Dissipation (T
= 25°C) 1.4 W
a
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage IC = - 10mA, IB = 0 -25 V
CEO
I
CBO
I
EBO
h
FE
V
(sat) * Collector-Emitter Saturation Voltage IC = - 500mA, IB= - 50mA
CE
(sat) * Base-Emitter Saturation Voltage IC = - 5A, IB = - 1A -2.5 V
V
BE
(on) * Base-Emitter On Voltage V
V
BE
f
T
Cob
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
= - 40V, IE = 0 -100 nA
CB
= - 8V, IC = 0 -100 nA
EBO
= - 1V, IC = - 500mA
CE
V
= - 1V, IC = - 2A
CE
= - 2V, IC = - 5A
V
CE
70
45
10
180
-0.3
= - 2A, IB = - 200mA
I
C
I
= - 5A, IB = - 1A
C
= - 1V, IC = - 2A -1.6 V
CE
= - 10V, IC = - 100mA 65 MHz
CE
= - 10V, IE = 0, f = 0.1MHz 120 pF
CB
-0.75
-1.8
V
V
V
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
Typical Characteristics
KSH210
1000
100
VCE=-1V
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
[pF], CAPACITANCE
ob
C
1000
100
10
VCE=-2V
VBE(sat)
VCE(sat)
IC=10I
B
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
BE
(sat),V
CE
-0.01
V
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
10
1
0.1
[ns], TURN ON TIME
D
,t
R
t
VCC=-30V
=10I
I
C
B
t
R
t
D
1
-0.1 -1 -10 -100
VCB[V], COLLECTOR BASE VOLTAGE
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
1000
100
[ns], TURN OFF TIME
F
,t
STG
t
10
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
0.01
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
VCC=-30V
=10I
I
C
B
IB1=-I
B2
t
STG
-100
-10
100
500
5ms
µ
s
µ
s
1ms
DC
t
F
-1
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-0.1 -1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Rev. A4, October 2002
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