Fairchild Semiconductor KSH127I Datasheet
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
KSH127
PNP Silicon Darlington Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Electrical Characteristics
TC=25°C unless otherwise noted
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage - 100 V
V
CEO
Collector-Emitter Voltage - 100 V
V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 8 A
I
CP
Collector Current (Pulse) - 16 A
I
B
Base Current - 120 mA
P
C
Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (T
a
=25°C) 1.75 W
T
J
Junction T emperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Tes t Condition Min. Max. Units
V
CEO
(sus) *Collector-Emitter Sustaining Voltage IC = - 30mA, IB = 0 - 100 V
I
CEO
Collector Cut-off Current V
CE
= - 50V, IB = 0 - 10 µA
I
CBO
Collector Cut-off Current V
CB
= - 100V, IE = 0 - 10 µA
I
EBO
Emitter Cut-off Current V
EB
= - 5V , IC = 0 - 2 mA
h
FE
*DC Current Gain V
CE
= - 4V , IC = - 4A
V
CE
= - 4V , V
EB
= -8A
1000
100
12K
V
CE
(sat) *Collector-Emitter Saturation Voltage IC = - 4A, IB = - 16mA
I
C
= - 8A, IB = - 80mA
- 2
- 4
V
V
V
BE
(sat) *Base-Emitter Saturation Voltage IC = - 8A, IB = - 80mA - 4.5 V
V
BE
(on) *Base-Emitter On Voltage V
CE
= -4V, IC = - 4A - 2.8 V
Cob
Output Capacitance V
CB
= - 10V, IE = 0
f= 0.1MHz
300 pF
KSH127
D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
• Electrically Similar to Popular TIP127
• Complement to KSH122
Equivalent Circuit
B
E
C
R1
R2
R
18
k
Ω≅
R
20.12
k
Ω≅
1.Base 2.Collector 3.Emitter
D-PAK I-PAK
11
©2002 Fairchild Semiconductor Corporation
KSH127
Rev. A4, October 2002
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
Figure 5. Turn Off Time Figure 6. Safe Operating Area
-0.1 -1 -10
100
1k
10k
VCE = -4V
h
FE
, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.1 -1 -10 -100
-0.01
-0.1
-1
-10
IC = 250 I
B
VCE(sat)
VBE(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-0.1 -1 -10 -100
1
10
100
1000
C
ob
[pF], CAPACITANCE
VCB[V], COLLECTOR BASE VOLTAGE
-0.1 -1 -10
0.01
0.1
1
10
VCC= -30V
IC= 250I
B
IB1= -I
B2
tD, VBE(off)=0
t
R
t
R
,t
D
[
µ
s], TURN ON TIME
IC[A], COLLECTOR CURRENT
-0.1 -1 -10
0.1
1
10
VCC= -30V
IC= 250I
B
IB1= -I
B2
t
F
t
STG
t
STG
,t
F
[
µ
s], TURN OFF TIME
IC[A], COLLECTOR CURR EN T
-1 -10 -100 -1000
-0.01
-0.1
-1
-10
-100
500
µ
s
5ms
100
µ
s
1ms
DC
I
C
[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
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