Fairchild Semiconductor KSH127 Datasheet
KSH127
D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
• Electrically Similar to Popular TIP127
• Complement to KSH122
PNP Silicon Darlington Transistor
11
D-PAK I-PAK
1.Base 2.Collector 3.Emitter
KSH127
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Equivalent Circuit
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage - 100 V
Collector-Emitter Voltage - 100 V
Emitter-Base Voltage - 5 V
Collector Current (DC) - 8 A
Collector Current (Pulse) - 16 A
Base Current - 120 mA
Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (T
=25°C) 1.75 W
a
Junction T emperature 150 °C
Storage Temperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
B
R
R
R1
Ω≅
18
k
20.12
R2
Ω≅
k
Symbol Parameter Tes t C ondition Min. Max. Units
V
(sus) *Collector-Emitter Sustaining Voltage IC = - 30mA, IB = 0 - 100 V
CEO
I
CEO
I
CBO
I
EBO
h
FE
(sat) *Collector-Emitter Saturation Voltage IC = - 4A, IB = - 16mA
V
CE
(sat) *Base-Emitter Sat uration Voltage IC = - 8A, IB = - 80mA - 4.5 V
V
BE
(on) *Base-Emitter On Voltage V
V
BE
Cob
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector Cut-off Current V
Collector Cut-off Current V
Emitter Cut-off Current V
*DC Current Gain V
Output Capacitance V
= - 50V, IB = 0 - 10 µA
CE
= - 100V, IE = 0 - 10 µA
CB
= - 5V, IC = 0 - 2 mA
EB
= - 4V, IC = - 4A
CE
V
= - 4V, V
CE
= - 8A, IB = - 80mA
I
C
= -4V, IC = - 4A - 2.8 V
CE
= - 10V, IE = 0
CB
f= 0.1MHz
EB
= -8A
1000
100
12K
- 2
- 4
300 pF
C
E
V
V
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
Typical Characteristics
KSH127
10k
1k
, DC CURRENT GAIN
FE
h
100
-0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
[pF], CAPACITANCE
ob
C
1000
100
10
VCE = -4V
VCE(sat)
IC = 250 I
B
-10
VBE(sat)
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-0.1 -1 -10 -100
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
10
1
s], TURN ON TIME
µ
0.1
[
D
,t
R
t
VCC= -30V
IC= 250I
B
IB1= -I
B2
t
R
tD, VBE(off)=0
1
-0.1 -1 -10 -100
VCB[V], COLLECTOR BASE VOLTAGE
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
10
1
s], TURN OFF TIME
µ
[
F
,t
STG
t
0.1
-0.1 -1 -10
IC[A], COLLECTOR CURR E NT
Figure 5. Turn Off Time Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
0.01
-0.1 -1 -10
IC[A], COLLECTOR CURRENT
VCC= -30V
IC= 250I
B
IB1= -I
B2
t
STG
t
F
-100
-10
-1
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-1 -10 -100 -1000
100
µ
s
500
µ
s
1ms
5ms
DC
VCE[V], COLLECTOR-EMITTER VOLTAGE
Rev. A4, October 2002
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