Fairchild Semiconductor KSH122I, KSH122 Datasheet
KSH122
D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
• Electrically Similar to Popular TIP122
• Complement to KSH127
NPN Silicon Darlington Transistor
11
D-PAK I-PAK
1.Base 2.Collector 3.Emitter
KSH122
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Equivalent Circuit
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage 100 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 5 V
Collector Current (DC) 8 A
Collector Current (Pulse) 16 A
Base Current 120 mA
Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (T
=25°C) 1. 75 W
a
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
B
R
R
R1
Ω≅
18
k
20.12
R2
Ω≅
k
Symbol Parameter Test Condition Min. Max. Units
V
(sus) *Collector-Emitter Sustaining Voltage IC = 30mA, IB = 0 100 V
CEO
I
CEO
I
CBO
I
EBO
h
FE
(sat) *Collector-Emitter Saturation Voltage IC = 4A, IB = 16mA
V
CE
(sat) *Base-Emitter Saturat ion Voltage IC = 8A, IB = 80mA 4.5 V
V
BE
(on) *Base-Emitter On Voltage V
V
BE
Output Capacitance V
Cob
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector Cut-off Current V
Collector Cut-off Current V
Emitter Cut-off Current V
*DC Current Gain V
= 50V, IB =0 10 µA
CE
= 100V, IE = 0 10 µA
CB
= 5V, IC = 0 2 mA
EB
= 4V, IC = 4A
CE
V
= 4V, V
CE
= 8A, IB = 80mA
I
C
= 4V, IC = 4A 2.8 V
CE
= 10V, IE = 0
CB
f= 0.1MHz
EB
= 8A
1000
100
12K
2
4
200 pF
C
E
V
V
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
Typical Characteristics
KSH122
10k
1k
, DC CURRENT GAIN
FE
h
100
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
[pF], CAPACITANCE
ob
C
1000
100
10
VCE = 4V
VCE(sat)
IC = 250 I
B
10
VBE(sat)
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.1 1 10 100
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
10
1
s], TURN ON TIME
µ
[
0.1
D
,t
R
t
tD, VBE(off)=0
VCC= 30V
IC=250I
B
IB1=-I
B2
t
R
1
0.1 1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
0.01
0.1 1 10
IC[A], COLLECTOR C URRENT
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
10
1
s], TURN OFF TIME
µ
[
F
,t
STG
t
0.1
0.1 1 10
t
STG
t
F
IC[A], COLLECTOR CURRENT
VCC=30V
=250I
I
C
100
B
10
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
100
µ
s
500
µ
s
1ms
5ms
DC
Figure 5. Turn Off Time Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
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