Fairchild Semiconductor KSH117I, KSH117 Datasheet
KSH117
D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
• Electrically Similar to Popular TIP117
PNP Silicon Darlington Transistor
11
D-PAK I-PAK
1.Base 2.Collector 3.Emitter
KSH117
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Equivalent Circuit
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage - 100 V
Collector-Emitter Voltage - 100 V
Emitter-Base Voltage - 5 V
Collector Current (DC) - 2 A
Collector Current (Pulse) - 4 A
Base Current - 50 mA
Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (T
=25°C) 1.75 W
a
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
B
R
110
R
20.6
R1
R2
Ω≅
k
Ω≅
k
Symbol Parameter Test Condition Min. Max. Units
V
(sus) *Collector-Emitter Sustaining Voltage IC = - 30mA, IB = 0 - 100 V
CEO
I
CEO
I
CBO
I
EBO
h
FE
V
(sat) *Collector-Emitter Satu ration Voltage IC = -2A, IB = - 8mA
CE
(sat) *Base-Emitter Saturation Voltage IC = - 4A, IB = - 40mA - 4 V
V
BE
(on) *Base-Emitter On Voltage V
V
BE
f
T
Output Capacitance V
Cob
Collector Cut-off Current V
Collector Cut-off Current V
Emitter Cut-off Current V
*DC Current Gain V
Current Gain Bandwidth Product V
= - 50V, IB = 0 - 20 µA
CE
= - 100V, IE = 0 - 20 µA
CB
= - 5V, IC = 0 - 2 mA
EB
= - 3V, V
CE
V
= - 3V, V
CE
= - 3V, IC = - 4A
V
CE
EB
EB
= - 0.5A
= - 2A
500
1000
200
12K
- 2
= - 4A, IB = - 40mA
I
C
= - 3A, IC = - 2A - 2.8 V
CE
= -10V, IC = - 0.75A 25 MHz
CE
= - 10V, IE = 0
CB
- 3
200 pF
f= 0.1MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%
C
E
V
V
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
Typical Characteristics
KSH117
10000
VCE = - 3V
1000
100
, DC CURRENT GAIN
FE
h
10
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
10
1
s), TURN ON TIME
µ
(
D
, t
R
t
0.1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CUR RE NT
VCC= - 30V
=250I
I
C
B
t
R
t
D
VBE(sat)
VCE(sat)
IC = 250 I
B
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
10
1
s], TURN OFF TIME
µ
[
F
,t
STG
t
0.1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CUR RE NT
VCC=30V
=250I
I
C
B
t
STG
t
F
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
1000
100
10
[pF], CAPACITANCE
ob
C
1
-0.01 -0.1 -1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
-10
-1
-0.1
[A], COLLECTOR CURRE N T
C
I
-0.01
-1 -10 -100 -1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
100
µ
s
1ms
5ms
DC
Figure 5. Turn Off Time Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
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