Fairchild Semiconductor KSH112, KSH112I Datasheet
KSH112
D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
• Electrically Similar to Popular TIP112
NPN Silico n Darlingt on Transistor
11
D-PAK I-PAK
1.Base 2.Collector 3.Emitter
KSH112
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Equivalent Circuit
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage 100 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 5 V
Collector Current (DC) 2 A
Collector Current (Pulse) 4 A
Base Current 50 mA
Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (T
=25°C) 1.75 W
a
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
B
R
110
R
20.6
R1
R2
Ω≅
k
Ω≅
k
Symbol Parameter Tes t C ondition Min. Max. Units
(sus) Collector-Emitter Sustaining Voltage IC = 30mA, IB = 0 100 V
V
CEO
I
CEO
I
CBO
I
EBO
h
FE
V
(sat) * Collector-Emitter Saturation Voltage IC = 2A, IB = 8mA
CE
(sat) * Base-Emitter Saturation Voltage IC = 4A, IB = 40mA 4 V
V
BE
(on) * Base-Emitter On Voltage V
V
BE
f
T
Output Capacitance V
Cob
Collector Cut-off Current V
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
= 50V, IB = 0 20 µA
CE
= 100V, IB = 0 20 µA
CB
= 5V, IC = 0 2 mA
EB
= 3V, IC = 0.5A
CE
V
= 3V, IC = 2A
CE
= 3V, IC = 4A
V
CE
= 4A, IB = 40mA
I
C
= 3A, IC = 2A 2.8 V
CE
= 10V, IC = 0.75A 25 MHz
CE
= 10V, IE = 0
CB
500
1000
200
12K
100 pF
2
3
f = 0.1MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%
C
E
V
V
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
Typical Characteristics
KSH112
10000
1000
100
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
1000
100
10
[pF], CAPACITANCE
ob
C
1
0.1 1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
VCE = 3V
VBE(sat)
VCE(sat)
IC = 250 I
B
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
10
1
s), TURN ON TIME
µ
(
D
,t
R
t
0.1
0.01 0.1 1 10
IC[A], COLLECTOR CUR RE NT
VCC=30V
=250I
I
C
B
t
R
t
D
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
10
1
S], TURN OFF T IME
µ
[
F
,t
STG
t
0.1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
10
VCC=30V
=250I
I
C
B
t
STG
t
F
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100 1000
100
µ
s
1ms
5ms
DC
VCE[V], COLLECTOR-EMITTER VOLTAGE
Rev. A4, October 2002
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