Fairchild Semiconductor KSE703, KSE702, KSE701, KSE700 Datasheet
KSE700/701/702/703
Monolithic Construction With Built-in BaseEmitter Resis t ors
• High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC
• Complement to KSE800/801/802/803
KSE700/701/702/703
1
TO-126
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
Sym-
bol
V
CBO
V
CEO
VEBO
IC
IB
PC
TJ
T
STG
Collector- Base Voltage : KSE700/701
Collector-Emitter Voltage : KSE700/701
Emitter- Base Voltage - 5 V
Collector Current - 4 A
Base Current - 0.1 A
Collector Dissipation (TC=25°C) 40 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Parameter Value
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
I
CEO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage
VCE
(on) Base-Emitter On Voltage
V
BE
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain
TC=25°C unless otherwise noted
- 60
: KSE702/703
- 80
- 60
: KSE702/703
- 80
TC=25°C unless otherwise noted
: KSE700/701
IC = - 10mA, IB = 0 -60
: KSE702/703
: KSE700/701
: KSE702/703
: KSE700/702
: KSE701/703
: ALL DEVICES
= - 60V, IB = 0
V
CE
V
= - 80V, IB = 0
CE
= Rated BV
CB
= Rated BV
V
CB
@T
C
= - 5V, IC = 0 -2 mA
BE
= - 3V, IC = - 1.5A
V
CE
= - 3V, IC = - 2A
V
CE
V
= - 3V, IC = - 4A
CE
: KSE700/702
: KSE701/703
: ALL DEVICES
= - 1.5A, IB = - 30mA
I
C
= - 2A, IB = - 40mA
I
C
I
= - 4A, IB = - 40mA
C
: KSE700/702
: KSE701/703
: ALL DEVICES
= - 3V, IC = - 1.5A
V
CE
= - 3V, IC = - 2A
V
CE
V
= - 3V, IC = - 4A
CE
= 100°C
Unit
s
V
V
V
V
CEO
CEO
, IE = 0
, IE = 0
Equivalent Circuit
B
R
110
R
20.6
C
R1
R2
k
Ω≅
k
Ω≅
E
-80
-100
-100
-100
-500
750
750
100
-2.5
-2.8
-3
-1.2
-2.5
-3
V
V
µA
µA
µA
µA
V
V
V
V
V
V
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
Typical Characteristics
KSE700/701/702/703
-5
-4
-3
-2
[A],COLLECTOR CURRENT
C
I
-1
-0
-0 -1 -2 -3 -4 -5
IB= -700µs
IB= -600µs
IB= -500µs
IB= -1000µs
IB= -900µs
IB= -800µs
= -400
I
B
= -300
I
B
= -200
I
B
IB= -100µs
VCE(V),COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-100
-10
-1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
µ
s
µ
s
µ
s
IC = 500 I
10k
1k
100
, DC CURRENT GAIN
FE
h
10
-0.01 -0.1 -1 - 10
VCE = -3V
IC[A], COLLECTOR CURRENT
1000
B
100
10
[pF], CAPACITANCE
ob
C
1
-0.01 -0.1 -1 -10 -100
f=0.1MHZ
IE=0
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
-100
-10
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-1 -10 -100 -1000
MJE700/701
MJE702/703
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
D.C.
5ms
Figure 4. Collector Output Capacitance
100
µ
s
1ms
60
50
40
30
20
[W], POWER DISSIPATION
C
10
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A2, June 2001
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