Fairchild Semiconductor BC239, BC238, BC237 Datasheet
BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
• LOW NOISE: BC239
ABSOLUTE MAXIMUM RATINGS (TA=25°°C)
Characteristic Symbol Rating Unit
Collector-Emitter Voltage
: BC237
: BC238/239
Collector-Emitter Voltage
: BC237
: BC238/239
Emitter-Base Voltage
: BC237
: BC238/239
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
V
CES
50
30
V
CEO
45
25
V
EBO
6
5
I
C
P
C
T
J
T
STG
100
500
150
-55 ~ 150
ELECTRICAL CHARACTERISTICS (TA=25°°C)
Characteristic Symbol Test Conditions Min Typ Max Unit
(sat)
(sat)
(on)
IC=2mA, IB=0
IE=1µA, IC=0
VCE=50V, IB=0
VCE=30V, IB=0
VCE=5V, IC=2mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=3V, IC=0.5mA
VCE=5V, IC=10mA
VCB=10V, f=1MHz
VEB=0.5V, f=1MHz
VCE=5V, IC=0.2mA,
f=1KHz RG=2kohm
VCE=5V, IC=0.2mA
RG=2kohm, f=30~15KHz
Collector-Emitter Breakdown Voltage
:BC237
: BC238/239
Emitter Base Breakdown Voltage
: BC237
: BC238/239
Collector Cut-off Current
: BC237
: BC238/239
DC Current Gain
Collector-Emitter Saturation Voltage
Collector Base Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
Collector Base Capacitance
Emitter Base Capacitance
Noise Figure : BC237/238
: BC239
: BC239
BV
BV
I
h
V
V
V
f
C
C
NF
NF
CEO
EBO
CES
FE
CE
BE
BE
T
CBO
EBO
V
V
V
V
V
V
mA
mW
°C
°C
TO-92
1. Collector 2. Base 3. Emitter
45
25
6
5
0.2
0.2
120
0.07
0.2
0.73
0.87
0.62
0.55
150
85
250
3.5
V
V
V
V
15
nA
15
nA
800
0.2
V
0.6
0.7
V
V
V
V
MHz
0.83
1.05
MHz
pF
6
8
2
pF
dB
10
dB
4
dB
4
h
CLASSIFICATION
FE
Classification A B C
h
FE
120-220 180-460 380-800
Rev. B
1999 Fairchild Semiconductor Corporation
BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR
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