Fairchild Semiconductor 1N6266 Datasheet
0.040 (1.02)
0.100 (2.54)
0.050 (1.27)
45°
0.040 (1.02)
13
0.030 (0.76)
NOM
0.184 (4.67)
0.209 (5.31)
1.00 (25.4)
MIN
0.255 (6.48)
ANODE
(CASE)
Ø0.020 (0.51) 2X
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip
1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
PACKAGE DIMENSIONS
FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched to the
TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
• (*) Indicates JEDEC registered values
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-65 to +125 °C
*Storage Temperature T
STG
-65 to +150 °C
*Soldering Temperature (Iron)
(3,4,5 and 6)
T
SOL-I
240 for 5 sec °C
*Soldering Temperature (Flow)
(3,4 and 6)
T
SOL-F
260 for 10 sec °C
*Continuous Forward Current I
F
100 mA
*Forward Current (pw, 1µs; 200Hz) I
F
10 A
*Reverse Voltage V
R
3V
*Power Dissipation (TA= 25°C)
(1)
P
D
170 mW
Power Dissipation (TC= 25°C)
(2)
P
D
1.3 W
ABSOLUTE MAXIMUM RATINGS
(TA= 25°C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
1N6266
GaAs INFRARED EMITTING DIODE
DESCRIPTION
• The 1N6266 is a 940 nm LED in a
narrow angle, TO-46 package.
SCHEMATIC
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
*Peak Emission Wavelength IF= 100 mA D
P
935 — 955 nm
Emission Angle at 1/2 Power 0 — ±10 — Deg.
Forward Voltage IF= 100 mA V
F
——1.7 V
*Reverse Leakage Current VR= 3 V I
R
——10 µA
*Radiant Intensity IF= 100 mA Ie 25 —— mW/sr
Rise Time 0-90% of output t
r
— 1.0 — µs
Fall Time 100-10% of output t
f
— 1.0 — µs
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C) (All measurements made under pulse conditions)
2001 Fairchild Semiconductor Corporation
DS300278 3/12/01 1 OF 7 www.fairchildsemi.com
ANODE
(Connected
To Case)
CATHODE
3
1
1N6266
GaAs INFRARED EMITTING DIODE
www.fairchildsemi.com 2 OF 7 3/12/01 DS300278
MAXIMUM RATINGS CURVES
10
8
6
4
2
1.0
0.8
0.6
0.4
= INPUT CURRENT (mA)
F
I
0.2
0.1 0
10 .01 .02 .04 .06 .08 0.1 .2 .4 .6 .8 1.0 2 4 6 8 10
100 1000 10,000 100,000
PULSE WIDTH = 2 µS
50 µS
100 µS
10 µS
f = FREQUENCY - HERTZ
Fig.1 Maximum Pulse Capability
100
.80
60
40
20
10
8
6
4
2
1.0
.8
.6
.4
.2
.10
.08
.06
.04
= NORMALIZED RADIANT INTENSITY
.02
e
I
.01
.01 023145796810.02 .04 .06 .08.1
Normalized to:
= 100 mA
I
F
N = .01 Steradians
= 25˚C
T
A
.2 .4 .6 .8 1.0 2 4 6 8 10
150
125
100
75
50
TEMPERATURE (˚C)
25
= MAXIMUM ALLOWABLE AMBIENT
A
T
Fig.2 Maximum Temperature vs. Input Current
10.0
8.0
6.0
4.0
2.0
1.0
0.8
0.6
0.4
0.2
0.1
.08
.06
= FORWARD CURRENT (A)
.04
F
I
.02
.01
100% Duty Cycle 10% Duty
Cycle
IF - INPUT CURRENT (mA)
1% Duty
Cycle
IF - INPUT CURRENT (A)
Fig.3 Radiant Intensity vs.
Input Current le/l
VF - FORWARD VOLTAGE (V)
Fig.4 Forward Voltage vs.
Forward Current
1N6266
GaAs INFRARED EMITTING DIODE
MAXIMUM RATINGS CURVES
DS300278 3/12/01 3 OF 7 www.fairchildsemi.com
100
80
60
40
1.0
0.8
20
10
= FORWARD CURRENT (mA)
F
I
TA = 100˚C 25˚C -55˚C
8
6
4
2
0
0.9
Fig.5 Forward Voltage vs. Forward Current
0.6
0.4
RELATIVE OUTPUT
0.2
1.0 1.1 1.2 1.3 1.4 1.5 880
0
VF - FORWARD VOLTAGE (V)
100
80
60
40
20
10
8
6
4
2
1.0
.8
.6
.4
.2
.10
.08
.06
.04
= NORMALIZED POWER OUTPUT
R
I
.02
.01
-50
IF = 1 A
IF = 100 mA
IF = 10 mA
-25 0 25 50 75 100 125 150
900 920 940 960 980 1000 1020
D- WAVELENGTH - NANOMETERS
Fig.6 Spectral Output
Normalized to:
= 100 mA
I
F
N = .01 Steradians
= 25˚C
T
A
Silicon Photodiode
as Detector
TA - AMBIENT TEMPERATURE (˚C)
Fig.7 Output vs. Temperature
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