Fairchild Semiconductor 1N6265 Datasheet
0.040 (1.02)
0.100 (2.54)
0.050 (1.27)
45°
0.040 (1.02)
13
0.030 (0.76)
NOM
0.184 (4.67)
0.209 (5.31)
1.00 (25.4)
MIN
ANODE
(CASE)
Ø0.020 (0.51) 2X
0.155 (3.94)
MAX
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip
1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, PO, is the total power radiated by the device into
a solid angle of 2 H steradians.
PACKAGE DIMENSIONS
FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched to the
TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
• (*) Indicates JEDEC registered values
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-65 to +125 °C
*Storage Temperature T
STG
-65 to +150 °C
*Soldering Temperature (Iron)
(3,4,5 and 6)
T
SOL-I
240 for 5 sec °C
*Soldering Temperature (Flow)
(3,4 and 6)
T
SOL-F
260 for 10 sec °C
*Continuous Forward Current I
F
100 mA
*Forward Current (pw, 1µs; 200Hz) I
F
10 A
*Reverse Voltage V
R
3V
*Power Dissipation (TA= 25°C)
(1)
P
D
170 mW
Power Dissipation (TC= 25°C)
(2)
P
D
1.3 W
ABSOLUTE MAXIMUM RATINGS
(TA= 25°C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
1N6265
GaAs INFRARED EMITTING DIODE
DESCRIPTION
• The 1N6265 is a 940 nm LED in a
narrow angle, TO-46 package.
SCHEMATIC
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
*Peak Emission Wavelength IF= 100 mA D
PE
935 — 955 nm
Emission Angle at 1/2 Power 0 — ±40 — Deg.
*Forward Voltage IF= 100 mA V
F
——1.7 V
*Reverse Leakage Current VR= 3 V I
R
——10 µA
*Total Power IF= 100 mA P
O
6 —— mW
Rise Time 0-90% of output t
r
— 1.0 — µs
Fall Time 100-10% of output t
f
— 1.0 — µs
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A =25°C) (All measurements made under pulse conditions)
2001 Fairchild Semiconductor Corporation
DS300277 3/6/01 1 OF 3 www.fairchildsemi.com
ANODE
(Connected
To Case)
CATHODE
3
1
1N6265
GaAs INFRARED EMITTING DIODE
www.fairchildsemi.com 2 OF 3 3/6/01 DS300277
100
50
20
10
5
2
1.0
0.5
0.2
0.1
0.05
NORMALIZED POWER OUTPUT
0.02
0.01
.002.001
.005 .01 .02 0.1.05 0.2 0.5 1.0 2 5 10 -50
Fig. 1 Power Output vs. Input Current
10
8.0
6.0
4.0
2.0
1.0
0.8
0.6
0.4
0.2
.08
.06
.04
- FORWARD CURRENT (mA)
.02
F
I
.01
0
12345678910
Fig. 3 Forward Voltage vs. Forward Current
Continuous
Forward
Current
Normalized
I
= 100 mA
F
= 25˚C
T
A
IF - FORWARD CURRENT (mA)
VF - FORWARD VOLTAGE (V)
Pulsed
PW 80 µs
Forward
Current
1.4
1.2
1.0
0.8
0.6
0.4
- NORMALIZED POWER OUTPUTI
0.2
O
P
0
Fig. 2 Power Output vs. Temperature
100
80
60
40
20
10
8
6
4
- FORWARD CURRENT (mA)
F
2
0
.9 1.0 1.1 1.2 1.3 1.4 1.5
Fig. 4 Forward Voltage vs. Forward Current
Normalized
I
= 100 mA
F
= 25 C
T
A
-25 0 25 50 75 100 125 150
TA - AMBIENT TEMPERATURE (C)
= 100˚C
A
25˚C 55˚CT
VF - FORWARD VOLTAGE (V)
100
80
60
40
RELATIVE OUTPUT (%)
20
50
100
80 60 40 20 0 20 40 60 80 100
0- ANGULAR DISPLACEMENT FROM OPTICAL AXIS DEGREES
Fig. 5 Typical Radiation Pattern
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