Fairchild Semiconductor 1N5257B, 1N5256B, 1N5255B, 1N5254B, 1N5253B Datasheet

1N5226B - 1N5257B Series Half Watt Zeners

1N5226B - 1N5257B Series

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Parameter Value Units

Storage Temperature Range -65 to +200
Maximum Junction Operating Tem perature + 200
Lead Temperature (1/16” from case for 10 seconds) + 230
Total Device Dissipation

Derate above 75°C

Surge Power** 10 W

*These ratings are limiting values above which the serviceability of the diode may be impaired.
**Non-recurrent square wave PW= 8.3 ms, TA= 55 degrees C.

NOTES:

1) These ratings are based on a maximum junction temperature of 200 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed

or low duty cycle operations.

500

4.0

Electrical Characteristics TA = 25°C unless otherwise noted

V

Device

1N5226B

1N5227B

1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B

1N5238B

1N5239B
1N5240B

1N5241B

1N5242B

Foward Voltage = 1.1 V M aximum @ I

V

F

NOTE: National preferred devices in BOLD

Z

(V)

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.0

6.2

6.8

7.5

8.2

8.7

9.1
10
11
12

Z

(Ω)

28
24
23
22
19
17
11

7.0

7.0

5.0

6.0

8.0

8.0
10
17
22
30

Z

I

ZT

@

(mA)

20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20

= 200 mA for all 1N5200 series

F

Z

ZK

(Ω)

1,600
1,700
1,900
2,000
1,900
1,600
1,600
1,600
1,000

750
500
500
600
600
600
600
600

I

@

(mA)

0.25

0.25

0.25

0.25

0.25

0.25

0.25

0.25

0.25

0.25

0.25

0.25

0.25

0.25

0.25

0.25

0.25

mW/°C

ZK

°C
°C
°C

mW

Tolerance: B = 5%

V

R

@

(V)

1.0

1.0

1.0

1.0

2.0

2.0

3.0

3.5

4.0

5.0

6.0

6.5

6.5

7.0

8.0

8.4

9.1

DO-35

I

R

(µA)

25
15
10

5.0

5.0

5.0

5.0

5.0

5.0

3.0

3.0

3.0

3.0

3.0

3.0

2.0

1.0

T

C

(%/°C)

- 0.07

- 0.065

- 0.06

+/- 0.055

+/- 0.03

+/- 0.3

0.038

0.038

0.045

0.05

0.058

0.062

0.065

0.068

0.075

0.076

0.077

1997 Fairchild Semiconductor Corporation

1N5200B Rev. A

Electrical Characteristics (continued) TA = 25°C unless otherwise noted

1N5226B - 1N5257B Series

Series Zener

(continued)

V

Device

1N5243B
1N5244B
1N5245B
1N5246B

1N5247B

1N5248B

1N5249B

1N5250B

1N5251B

1N5252B

1N5253B

1N5254B

1N5255B

1N5256B
1N5257B

Foward Voltage = 1.1 V M aximum @ I

V

F

NOTE: National preferred devices in BOLD

Z

(V)

13
14
15
16
17
18
19
20
22
24
25
27
28
30
33

Z

(Ω)

13
15
16
17
19
21
23
25
29
33
35
41
44
49
58

Z

I

ZT

@

(mA)

9.5

9.0

8.5

7.8

7.4

7.0

6.6

6.2

5.6

5.2

5.0

4.6

4.5

4.2

3.8

= 200 mA for all 1N5200 series

F

Z

(Ω)

600
600
600
600
600
600
600
600
600
600
600
600
600
600
700

ZK

I

ZK

@

(mA)

0.25

0.25

0.25

0.25

0.25

0.25

0.25

0.25

0.25

0.25

0.25

0.25

0.25

0.25

0.25

V

(V)

9.9
10
11
12
13
14
14
15
17
18
19
21
21
23
25

R

I

R

@

(nA)

500
100
100
100
100
100
100
100
100
100
100
100
100
100
100

T

C

(%/°C)

0.079

0.082

0.082

0.083

0.084

0.085

0.086

0.086

0.087

0.088

0.089

0.090

0.091

0.091

0.092