Fairchild FDD6N50, FDU6N50 service manual
FDD6N50/FDU6N50
500V N-Channel MOSFET
FDD6N50/FDU6N50 500V N-Channel MOSFET
January 2006
TM
UniFET
Features
• 6A, 500V, R
• Low gate charge ( typical 12.8 nC)
•Low C
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
( typical 9 pF)
rss
= 0.9Ω @VGS = 10 V
DS(on)
GS
D-PAK
FDD Series
D
GSD
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
I-PAK
FDU Series
G
S
Absolute Maximum Ratings
Symbol Parameter FDD6N50/FDU6N50 Unit
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P
D
T
J, TSTG
T
L
Drain-Source Voltage 500 V
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source voltage ±30 V
Single Pulsed Avalanche Energy
Avalanche Current (Note 1) 6 A
Repetitive Avalanche Energy (Note 1) 8.9 mJ
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
6
3.8
24 A
270 mJ
89
0.71
300 °C
W/°C
A
A
W
Thermal Characteristics
Symbol Parameter Min. Max. Unit
R
θJC
R
θJA
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDD6N50/FDU6N50 REV. A
Thermal Resistance, Junction-to-Case -- 1.4 °C/W
Thermal Resistance, Junction-to-Ambient -- 83 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Widt h Quantity
FDD6N50 FDD6N50TM D-PAK 380mm 16mm 2500
FDD6N50 FDD6N50TF D-PAK 380mm 16mm 2000
FDU6N50 FDU6N50TU I-PAK - - 70
FDD6N50/FDU6N50 500V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min. Typ. Max Units
Off Characteristics
BV
DSS
∆BV
/ ∆T
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 500 -- -- V
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V
ID = 250µA, Referenced to 25°C -- 0.5 -- V/°C
VDS = 400V, TC = 125°C
--
--
--
--
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 -- 5.0 V
Static Drain-Source
On-Resistance
Forward Transconductance VDS = 40V, ID = 3A
Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 95 190 pF
VGS = 10V, ID = 3A -- 0.76 0.9 Ω
(Note 4)
-- 2.5 -- S
-- 720 940 pF
f = 1.0MHz
Reverse Transfer Capacitance -- 9 13.5 pF
Turn-O n Delay Time VDD = 250V, ID = 6A
Turn-O n Ris e Ti me -- 55 120 ns
RG = 25Ω
-- 6 20 ns
Turn-O ff Delay Time -- 25 60 ns
Turn-O ff Fall Time -- 35 80 ns
Total Gate Charge VDS = 400V, ID = 6A
Gate-Source Charge -- 3.7 -- nC
VGS = 10V
Gate-Drain Charge -- 5.8 -- nC
(Note 4, 5)
-- 12.8 16.6 nC
(Note 4, 5)
Maximum Continuous Drain-Source Diode Forward Current -- -- 6 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 24 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 6A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 6A
Reverse Recovery Charge -- 1.7 -- µC
dIF/dt =100A/µs (Note 4)
-- 275 -- ns
10
1
µA
µA
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 6A, VDD = 50V, L=13.5mH, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
, Starting TJ = 25°C
DSS
FDD6N50/FDU6N50 REV. A
2 www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
20
V
GS
Top : 10.0 V
8.0V
7.5 V
7.0 V
15
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10
, Drain Current [A]
D
5
I
0
0 1020304050
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
1
10
150∩
0
10
25∩
-1
, Drain Current [A]
D
10
I
-2
10
246810
-55∩
Notes :∝
1. 250レs Pulse Test
= 25∩
2. T
C
VGS , Gate-Source Voltage [V]
and Temperature
Note∝
1. VDS = 40V
レs Pulse Test
2. 250
FDD6N50/FDU6N50 500V N-Channel MOSFET
2.5
2.0
1
10
VGS = 10V
1.5
1.0
[ヘ ],Drain-Source On-Resistance
0.5
DS(ON)
R
0.0
0 5 10 15 20
VGS = 20V
Note : T∝J = 25∩
ID, Drain Current [A]
0
10
150∩
, Reverse Drain Current [A]
DR
I
-1
10
0.20.40.60.81.01.21.41.61.8
25∩
Notes :∝
1. VGS = 0V
2. 250
レs Pulse Test
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
1000
100
Capacitance [pF]
10
0
10
C
iss
C
oss
C
rss
10
Notes :∝
1. VGS = 0 V
2. f = 1 MHz
1
VDS, Drain-Source Voltage [V]
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
051015
QG, Total Gate Charge [nC]
VDS = 100V
VDS = 250V
VDS = 400V
Note : I∝D = 6A
FDD6N50/FDU6N50 REV. A
3 www.fairchildsemi.com
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