Datasheet FDD6N50, FDU6N50 Datasheet (Fairchild)

FDD6N50/FDU6N50

500V N-Channel MOSFET

FDD6N50/FDU6N50 500V N-Channel MOSFET

January 2006

TM

UniFET

Features

• 6A, 500V, R

• Low gate charge ( typical 12.8 nC)

•Low C

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

( typical 9 pF)

rss

= 0.9Ω @VGS = 10 V

DS(on)

GS

D-PAK

FDD Series

D

GSD

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.

This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.

D

I-PAK

FDU Series

G

S

Absolute Maximum Ratings

Symbol Parameter FDD6N50/FDU6N50 Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

P

D

T

J, TSTG

T

L

Drain-Source Voltage 500 V

Drain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C)

Drain Current - Pulsed

Gate-Source voltage ±30 V

Single Pulsed Avalanche Energy

Avalanche Current (Note 1) 6 A

Repetitive Avalanche Energy (Note 1) 8.9 mJ

Power Dissipation (TC = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

(Note 1)

(Note 2)

6

3.8

24 A

270 mJ

89

0.71

300 °C

W/°C

A
A

W

Thermal Characteristics

Symbol Parameter Min. Max. Unit

R

θJC

R

θJA

©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDD6N50/FDU6N50 REV. A

Thermal Resistance, Junction-to-Case -- 1.4 °C/W

Thermal Resistance, Junction-to-Ambient -- 83 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Widt h Quantity

FDD6N50 FDD6N50TM D-PAK 380mm 16mm 2500

FDD6N50 FDD6N50TF D-PAK 380mm 16mm 2000

FDU6N50 FDU6N50TU I-PAK - - 70

FDD6N50/FDU6N50 500V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

BV

DSS

∆BV
/ ∆T

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 500 -- -- V

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V

ID = 250µA, Referenced to 25°C -- 0.5 -- V/°C

VDS = 400V, TC = 125°C

--

--

--

--

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 -- 5.0 V

Static Drain-Source
On-Resistance

Forward Transconductance VDS = 40V, ID = 3A

Input Capacitance VDS = 25V, VGS = 0V,

Output Capacitance -- 95 190 pF

VGS = 10V, ID = 3A -- 0.76 0.9 Ω

(Note 4)

-- 2.5 -- S

-- 720 940 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 9 13.5 pF

Turn-O n Delay Time VDD = 250V, ID = 6A

Turn-O n Ris e Ti me -- 55 120 ns

RG = 25Ω

-- 6 20 ns

Turn-O ff Delay Time -- 25 60 ns

Turn-O ff Fall Time -- 35 80 ns

Total Gate Charge VDS = 400V, ID = 6A

Gate-Source Charge -- 3.7 -- nC

VGS = 10V

Gate-Drain Charge -- 5.8 -- nC

(Note 4, 5)

-- 12.8 16.6 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 6 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 24 A

Drain-Source Diode Forward Voltage VGS = 0V, IS = 6A -- -- 1.4 V

Reverse Recovery Time VGS = 0V, IS = 6A

Reverse Recovery Charge -- 1.7 -- µC

dIF/dt =100A/µs (Note 4)

-- 275 -- ns

10

1

µA
µA

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS = 6A, VDD = 50V, L=13.5mH, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

, Starting TJ = 25°C

DSS

FDD6N50/FDU6N50 REV. A

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

20

V

GS

Top : 10.0 V

8.0V

7.5 V

7.0 V

15

6.5 V

6.0 V

5.5 V
Bottom : 5.0 V

10

, Drain Current [A]

D

5

I

0

0 1020304050

VDS, Drain-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

1

10

150∩

0

10

25∩

-1

, Drain Current [A]

D

10

I

-2

10

246810

-55∩

Notes :∝

1. 250レs Pulse Test

= 25∩

2. T

C

VGS , Gate-Source Voltage [V]

and Temperature

Note∝

1. VDS = 40V

レs Pulse Test

2. 250

FDD6N50/FDU6N50 500V N-Channel MOSFET

2.5

2.0

1

10

VGS = 10V

1.5

1.0

[ヘ ],Drain-Source On-Resistance

0.5

DS(ON)

R

0.0
0 5 10 15 20

VGS = 20V

Note : T∝J = 25∩

ID, Drain Current [A]

0

10

150∩

, Reverse Drain Current [A]

DR

I

-1

10

0.20.40.60.81.01.21.41.61.8

25∩

Notes :∝

1. VGS = 0V

2. 250

レs Pulse Test

VSD , Source-Drain Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

1000

100

Capacitance [pF]

10

0

10

C

iss

C

oss

C

rss

10

Notes :∝

1. VGS = 0 V

2. f = 1 MHz

1

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

051015

QG, Total Gate Charge [nC]

VDS = 100V

VDS = 250V

VDS = 400V

Note : I∝D = 6A

FDD6N50/FDU6N50 REV. A

3 www.fairchildsemi.com

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

FDD6N50/FDU6N50 500V N-Channel MOSFET

1.2

3.0

2.5

1.1

2.0

1.0

, (Normalized)

BV

DSS

0.9

♦ Notes :

1. VGS = 0 V

2. I

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

TJ, Junction Temperature [oC]

= 250 µA

D

1.5

, (Normalized)

DS(ON)

1.0

R

Drain-Source On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200

♦ Notes :

1. V

2. I

TJ, Junction Temperature [oC]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

2

Operation in This Area

10

is Limited by R

1

10

0

10

DS(on)

8

10 us

100 us

6

1 ms

10 ms

DC

4

D

GS

= 3 A

= 10 V

, Drain Current [A]
I

D

-1

10

-2

10

1. TC = 25 oC

2. T

3. Single Pulse

0

10

Notes :∝

= 150 oC

J

1

10

VDS, Drain-Source Voltage [V]

, Drain Current [A]

D

I

2

2

10

3

10

0

25 50 75 100 125 150

TC, Case Temperature [∩ ]

Figure 11. Transient Thermal Response Curve

0

10

D=0.5

0.2

0.1

-1

10

0.05

0.02

(t), Thermal Response

0.01

ヨJC

Z

-2

10

-5

10

single pulse

-4

10

-3

10

-2

10

t1, Square Wave Pulse Duration [sec]

Notes :∝

1. Z

(t) = 1.4 ∩ /W Max.

ヨ JC

2. D uty F actor, D =t

3. TJM - TC = PDM * Z

P

DM

t

1

-1

10

10

1/t2

(t)

ヨ JC

t

2

0

1

10

FDD6N50/FDU6N50 REV. A

4 www.fairchildsemi.com

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FDD6N50/FDU6N50 500V N-Channel MOSFET

FDD6N50/FDU6N50 REV. A

Unclamped Inductive Switching Test Circuit & Waveforms

5 www.fairchildsemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms

FDD6N50/FDU6N50 500V N-Channel MOSFET

FDD6N50/FDU6N50 REV. A

6 www.fairchildsemi.com

Mechanical Dimensions

FDD6N50/FDU6N50 500V N-Channel MOSFET

D-PAK

FDD6N50/FDU6N50 REV. A

Dimensions in Millimeters

7 www.fairchildsemi.com

Mechanical Dimensions (Continued)

FDD6N50/FDU6N50 500V N-Channel MOSFET

I-PAK

FDD6N50/FDU6N50 REV. A

Dimensions in Millimeters

8 www.fairchildsemi.com

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Rev. I18