Datasheet FDD3N50NZ Datasheet (Fairchild)

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FDD3N50NZ N-Channel MOSFET

FDD3N50NZ

N-Channel MOSFET

500V, 2.5A, 2.5

Features

•R

• Low Gate Charge ( Typ. 6.2nC)

• Low C

• Fast Switching

• 100% Avalanche Tested

• Improved dv/dt Capability

• ESD Imoroved Capability

• RoHS Compliant

= 2.1 ( Typ.)@ VGS = 10V, ID = 1.25A

DS(on)

( Typ. 2.5pF)

rss

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.

November 2011

UniFET-II

D-PAK

MOSFET Maximum Ratings T

Symbol Parameter FDD3N50NZ Units

DSS

GSS

dv/dt Peak Diode Recovery dv/dt  (Note 3) 10 V/ns

TJ, T

STG

*Drain current limited by maximum junction temperature

Drain to Source Voltage 500 V

Gate to Source Voltage ±25 V

Drain Current

Drain Current - Pulsed  (Note 1) 10 A

Single Pulsed Avalanche Energy (Note 2) 114 mJ

Avalanche Current  (Note 1) 2.5 A

Repetitive Avalanche Energy  (Note 1) 4 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 25oC unless otherwise noted*

-Continuous (TC = 25oC) 2.5

-Continuous (TC = 100oC) 1.5

(TC = 25oC) 40 W

- Derate above 25oC 0.3 W/oC

300

Thermal Characteristics

Symbol Parameter

JC

JA

Thermal Resistance, Junction to Case 3.1

Thermal Resistance, Junction to Ambient 90

Ratings

Units

C/W

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD3N50NZ FDD3N50NZTM D-PAK 380mm 16mm 2500

FDD3N50NZ N-Channel MOSFET

Electrical Characteristics

TC = 25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV BV

T

DSS

GSS

DSS

Drain to Source Breakdown Voltage ID = 250A, VGS = 0V, TC = 25oC 500 - - V Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±25V, V

ID = 250A, Referenced to 25oC - 0.5 - V/oC

VDS = 500V, V

VDS = 400V, V

= 0V - - 1

= 0V,TC = 125oC- - 10

= 0V - - ±10 A

On Characteristics

GS(th)

DS(on)

Gate Threshold Voltage VGS = VDS, ID = 250A 3.0 - 5.0 V

Static Drain to Source On Resistance VGS = 10V, ID = 1.25A - 2.1 2.5 

= 20V, ID = 1.25A (Note 4)

Forward Transconductance

- 1.9 - S

Dynamic Characteristics

iss

oss

rss

g(tot)

Input Capacitance

Output Capacitance - 30 45 pF

Reverse Transfer Capacitance - 2.5 5 pF

VDS = 25V, VGS = 0V f = 1MHz

Total Gate Charge at 10V

Gate to Source Gate Charge - 1.4 - nC

Gate to Drain “Miller” Charge - 3.1 - nC

VDS = 400V ID = 2.5A VGS = 10V

(Note 4, 5)

- 210 280 pF

- 6.2 8 nC

Switching Characteristics

d(on)

d(off)

Turn-On Delay Time

Turn-On Rise Time - 15 40 ns

Turn-Off Delay Time - 26 60 ns

Turn-Off Fall Time - 17 45 ns

VDD = 250V, ID = 2.5A VGS = 10V, R

(Note 4, 5)

GEN

= 25

-1030ns

A

Drain-Source Diode Characteristics

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 36.6mH, I

 2.5A, di/dt  200A/s, VDD  BV

3. I

4. Pulse Test: Pulse width  300s, Dual Cycle  2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FDD3N50NZ Rev. C0

Maximum Continuous Drain to Source Diode Forward Current - - 2.5 A

Maximum Pulsed Drain to Source Diode Forward Current - - 10 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 0.52 - C

= 2.5A, VDD = 50V, RG = 25, Starting TJ = 25C

, Starting TJ = 25C

DSS

= 0V, I

VGS = 0V, I

= 2.5A - - 1.4 V

= 2.5A

dIF/dt = 100A/s (Note 4)

- 190 - ns

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDD3N50NZ N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDD3N50NZ Rev. C0

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature

FDD3N50NZ N-Channel MOSFET

Figure 11. Transient Thermal Response Curve

FDD3N50NZ Rev. C0

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FDD3N50NZ N-Channel MOSFET

FDD3N50NZ Rev. C0

Unclamped Inductive Switching Test Circuit & Waveforms

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

FDD3N50NZ N-Channel MOSFET

FDD3N50NZ Rev. C0

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Mechanical Dimensions

FDD3N50NZ N-Channel MOSFET

D-PAK

FDD3N50NZ Rev. C0

Dimensions in Millimeters

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TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

2Cool™ AccuPower™ Auto-SPM™ AX-CAP™*

BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™

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Fairchild Fairchild Semiconductor FACT Quiet Series™

FACT

FAST

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FastvCore™ FETBench™

PDP SPM™ Power-SPM™ PowerTrench PowerXS™

Programmable Active Droop™

QFET QS™ Quiet Series™ RapidConfigure™

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Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™

SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6

SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™

®*

The Power Franchise The Right Technology for Your Success™

TinyBoost™ TinyBuck™ TinyCalc™

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TranSiC TriFault Detect™ TRUECURRENT SerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

FDD3N50NZ N-Channel MOSFET

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDD3N50NZ Rev. C0

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I55

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