Page 1
FDD3N40 / FDU3N40
400V N-Channel MOSFET
FDD3N40 / FDU3N40 400V N-Channel MOSFET
February 2007
TM
UniFET
Features
• 2A, 400V, R
• Low gate charge ( typical 4.5 nC)
•Low C
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
( typical 3.7 pF)
rss
= 3.4Ω @VGS = 10 V
DS(on)
G
S
D-PAK
FDD Series
D
G
D
S
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
I-PAK
FDU Series
G
S
Absolute Maximum Ratings
Symbol Parameter FDD3N40 / FDU3N40 Unit
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
T
J, TSTG
T
L
* Drain current limited by maximum junction temperature
Drain-Source Voltage 400 V
Drain Current - Continuous (TC = 25°C)
- Continuous (T
Drain Current - Pulsed
Gate-Source voltage ±30 V
Single Pulsed Avalanche Energy
Avalanche Current (Note 1) 2A
Repetitive Avalanche Energy (Note 1) 3mJ
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 100°C)
C
(Note 1)
(Note 2)
(Note 3) 4.5 V/ns
2.0
1.25
8.0 A
46 mJ
30
0.24
300 °C
Thermal Characteristics
A
A
W
W/°C
Symbol Parameter Typ Max Unit
R
θJC
R
θJA
©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDD3N40 / FDU3N40 Rev. A
Thermal Resistance, Junction-to-Case -- 4.2 °C/W
Thermal Resistance, Case-to-Sink Typ. -- 110 °C/W
Page 2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD3N40 FDD3N40TM D-PAK 380mm 16mm 2500
FDD3N40 FDD3N40TF D-PAK 380mm 16mm 2000
FDU3N40 FDU3N40TU I-PAK - - 70
FDD3N40 / FDU3N40 400V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min. Typ. Max Units
Off Characteristics
BV
DSS
∆BV
/ ∆T
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 400 -- -- V
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current VDS = 400V, VGS = 0V
I
= 250µA, Referenced to 25°C--0.4--V/°C
D
V
= 320V, TC = 125°C
DS
--
--
--
--
1
10
µA
µA
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250µA3.0--5.0V
Static Drain-Source
On-Resistance
Forward Transconductance VDS = 40V, ID = 1A
Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 30 40 pF
V
= 10V, ID = 1A -- 2.8 3.4 Ω
GS
(Note 4)
-- 2 -- S
-- 173 225 pF
f = 1.0MHz
Reverse Transfer Capacitance -- 3.7 6 pF
Turn-On Delay Time VDD = 200V, ID = 3A
R
= 25Ω
Turn-On Rise Time -- 30 70 ns
G
-- 10 30 ns
Turn-Off Delay Time -- 10 30 ns
Turn-Off Fall Time -- 25 60 ns
Total Gate Charge VDS = 320V, ID = 3A
V
= 10V
Gate-Source Charge -- 1.2 -- nC
GS
Gate-Drain Charge -- 2 -- nC
(Note 4, 5)
-- 4.5 6 nC
(Note 4, 5)
Maximum Continuous Drain-Source Diode Forward Current -- -- 2 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 8 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 2A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 3A
dI
/dt =100A/µs (Note 4)
Reverse Recovery Charge -- 0.75 -- µC
F
-- 210 -- ns
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 20mH, IAS = 2A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
≤ 2A, di/dt ≤ 200A/µs, VDD ≤ BV
3. I
SD
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
, Starting TJ = 25°C
DSS
FDD3N40 / FDU3N40 Rev. A
2 www.fairchildsemi.com
Page 3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
FDD3N40 / FDU3N40 400V N-Channel MOSFET
, Drain Current [A]
I
10
10
-1
10
D
-2
10
1
V
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
0
6.0 V
Bottom : 5.5 V
-1
10
GS
0
10
V
, Drain-Source Voltage [V]
1
10
150oC
25oC
, Drain Current [A]
D
* Notes :
1. 250
2. T
1
10
µs Pulse Test
= 25oC
C
I
0
10
45678910
V
, Gate-Source Voltage [V]
-55oC
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
15
14
13
12
11
10
9
8
7
6
5
4
3
[Ω], Drain-Source On-Resistance
2
1
DS(ON)
R
0123456
VGS = 10V
VGS = 20V
* Note : TJ = 25oC
ID, Drain Current [A]
1
10
0
10
150oC
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
25oC
VSD, Source-Drain voltage [V]
* Notes :
1. V
2. 250
* Notes :
1. V
2. 250
= 40V
DS
µs Pulse Test
= 0V
GS
µs Pulse Test
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
350
300
C
250
200
150
100
Capacitances [pF]
50
0
-1
10
FDD3N40 / FDU3N40 Rev. A
oss
C
iss
C
rss
0
10
VDS, Drain-Source Voltage [V]
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
* Note :
1. V
2. f = 1 MHz
1
10
12
10
8
= 0 V
GS
6
4
, Gate-Source Voltage [V]
2
GS
V
0
012345
VDS = 80V
VDS = 200V
VDS = 320V
* Note : ID = 3A
QG, Total Gate Charge [nC]
3 www.fairchildsemi.com
Page 4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
FDD3N40 / FDU3N40 400V N-Channel MOSFET
1.2
3.0
2.5
1.1
2.0
1.0
, (Normalized)
DSS
BV
0.9
Drain-Source Breakdown Voltage
0.8
-100 -50 0 50 100 150 200
* Notes :
1. V
2. I
TJ, Junction Temperature [oC]
= 0 V
GS
= 250µA
D
1.5
, (Normalized)
1.0
DS(ON)
R
Drain-Source On-Resistance
0.5
0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
, Drain Current [A]
I
1
10
10 µs
100 µs
2.5
2.0
1 ms
0
10
Operation in This Area
is Limited by R
DS(on)
-1
10
D
-2
10
0
10
1
10
10 ms
100 ms
DC
* Notes :
= 25 oC
1. T
C
= 150 oC
2. T
J
3. Single P uls e
2
10
VDS, Drain-Source Voltage [V]
1.5
1.0
, Drain Current [A]
D
I
0.5
0.0
25 50 75 100 125 150
TC, Case Temperature [oC]
* Notes :
1. V
2. I
D
GS
= 1 A
= 10 V
Figure 11. Transient Thermal Response Curve
D=0.5
0
10
0.2
0.1
0.05
FDD3N40 / FDU3N40 Rev. A
(t), Thermal Response
Z
0.02
0.01
-1
θJC
10
single pulse
-5
10
-4
10
-3
10
-2
10
t1, Square W ave Pulse Duration [sec]
4 www.fairchildsemi.com
* No tes :
1. Z
2. D u ty F a c to r , D = t
3. TJM - TC = PDM * Z
10
P
DM
(t) = 4.2 oC/W M ax.
θJC
-1
t
1
t
2
1/t2
(t)
θJC
0
10
1
10
Page 5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
FDD3N40 / FDU3N40 400V N-Channel MOSFET
FDD3N40 / FDU3N40 Rev. A
Unclamped Inductive Switching Test Circuit & Waveforms
5 www.fairchildsemi.com
Page 6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDD3N40 / FDU3N40 400V N-Channel MOSFET
FDD3N40 / FDU3N40 Rev. A
6 www.fairchildsemi.com
Page 7
Mechanical Dimensions
FDD3N40 / FDU3N40 400V N-Channel MOSFET
D-PAK
FDD3N40 / FDU3N40 Rev. A
7 www.fairchildsemi.com
Page 8
Mechanical Dimensions
FDD3N40 / FDU3N40 400V N-Channel MOSFET
I-PAK
FDD3N40 / FDU3N40 Rev. A
8 www.fairchildsemi.com
Page 9
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