Datasheet FDD8445 Datasheet (Fairchild)

tm

FDD8445

D

G

S

N-Channel PowerTrench® MOSFET

40V, 50A, 8.7mΩ

FDD8445 N-Channel PowerTrench

March 2007

Features

 R

 Q

 Low Miller Charge

 Low Qrr Body Diode

 UIS Capability (Single Pulse/ Repetitive Pulse)

 Qualified to AEC Q101

 RoHS Compliant

= 6.7 mΩ (Typ), VGS = 10V, ID=50A

DS(ON)

= 45nC (Typ), VGS=10V

g(10)

E

E

R

F

I

D

A

E

L

M

P

L

E

M

E

N

T

A

T

I

O

N

Applications

 Automotive Engine Control

 Powertrain Management

 Solenoid and Motor Drivers

 Electronic Transmission

 Distributed Power Architecture and VRMs

 Primary Switch for 12V Systems

®

MOSFET

©2007 Fairchild Semiconductor Corporation
FDD8445 Rev A (W)

www.fairchildsemi.com1

Absolute Maximum Ratings T

= 25°C unless otherwise noted

c

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 40 V

Gate to Source Voltage ±20 V

Drain Current Continuous (VGS=10v) (Note 1) 70 A

I

D

Continuous (V

=10v,with R

GS

= 52oC/W) 15.2 A

θJA

Pulsed Figure 4

E

AS

P

D

, T

T

J

STG

S i n g l e P u l s e A v a l a n c h e E n e r g y ( N o t e 2 ) 1 4 4 mJ

Power Dissipation 79 W

o

Derate above 25

C0.53W/oC

Operating and Storage Temperature -55 to +175

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.9

Thermal Resistance, Junction to Ambient TO-252, lin2 copper pad area 52

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD8445 FDD8445 TO-252AA 13” 12mm 2500 units

o

C/W

o

C/W

FDD8445 N-Channel PowerTrench

o

C

®

MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

I

DSS

I

GSS

DSS

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 40 - - V

Zero Gate Voltage Drain Current

VDS = 32V
V

= 0V

GS

TJ=150°C - - 250

- - 1 μA

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(th)

R

DS(ON)

Gate to Source Threshold Voltage VDS = VGS, ID = 250μA 2 2.8 4 V

ID = 50A, VGS = 10V - 6.7 8.7

Drain to Source On Resistance

ID = 50A, VGS = 10V,
TJ = 175°C

- 12.5 16.3

Dynamic Characteristics

C

ISS

C

OSS

C

RSS

R

G

Q

g(TOT)

Q

g(5)

Q

g(TH)

Q

gs

Q

gs2

Q

gd

Input Capacitance

Output Capacitance - 295 390 pF

Reverse Transfer Capacitance - 178 270 pF

VDS = 25V, VGS = 0V,
f = 1MHz

- 3040 4050 pF

Gate Resistance f = 1MHz - 1.7 - Ω

Total Gate Charge at 10V VGS = 0 to 10V

- 45 59 nC

Total Gate Charge at 5V VGS = 0 to 5V - 17 22 nC

Threshold Gate Charge VGS = 0 to 2V - 5.8 7.6 nC

Gate to Source Gate Charge

Gate Charge Threshold to Plateau - 9.5 - nC

VDD = 20V,

ID = 5 0 A

- 12.5 - nC

Gate to Drain “Miller” Charge - 10.5 - nC

mΩ

FDD8445 Rev A (W) www.fairchildsemi.com2

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Switching Characteristics

t

(on)

t

d(on)

t

r

t

d(off)

t

f

t

off

Turn-On Time

Turn-On Delay Time - 10 - ns

Turn-On Rise Time - 82 - ns

Turn-Off Delay Time - 26 - ns

V

= 20V, ID = 50A

DD

V

= 10V, RGS = 2Ω

GS

Turn-Off Fall Time - 9.6 - ns

Turn-Off Time - - 53 ns

- - 138 ns

Drain-Source Diode Characteristics

I

=50A - - 1.25 V

V

SD

t

rr

Q

rr

Notes:
1: Maximum package current capability is 50A.
2: Starting T

Source to Drain Diode Voltage

Reverse Recovery Time IF= 50A, dIF/dt=100A/μs--39ns

Reverse Recovery Charge IF= 50A, dIF/dt=100A/μs--38nC

= 25oC, L=0.18mH, IAS=40A.

J

SD

=25A - - 1.0 V

I

SD

FDD8445 N-Channel PowerTrench

®

MOSFET

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

FDD8445 Rev A (W) www.fairchildsemi.com3

a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

certification.

Typical Characteristics

0 25 50 75 100 125 150 175

0.0

0.2

0.4

0.6

0.8

1.0

1.2

POWER DISSIPATION MULTIPLIER

TC , CASE TEMPERATURE(oC)

25 50 75 100 125 150 175

0

20

40

60

80

VGS=10V

CURRENT LIMITED
BY PACKAGE

I

D

, DRAIN CURRENT (A)

T

C

, CASE TEMPERATURE(

o

C)

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

0.01

0.1

1

SINGLE PULSE

D = 0.50

0.20

0.10

0.05

0.02

0.01

NORMALIZED THERMAL

IMPEDANCE, Z

θJC

t, RECTANGULAR PULSE DURATION(s)

DUTY CYCLE - DESCENDING ORDER

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJC

x R

θJC

+ T

C

P

DM

t

1

t

2

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

100

1000

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

VGS = 10V

SINGLE PULSE

I

DM

, PEAK CURRENT (A)

t, RECTANGULAR PULSE DURATION(s)

2000

TC = 25oC

I = I

25

175 - T

C

150

FOR TEMPERATURES

ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

Figure 1. Normalized Power Dissipation vs Case

Temperature

Figure 2. Maximum Continuous Drain Current vs

Case Temperature

FDD8445 N-Channel PowerTrench

®

MOSFET

FDD8445 Rev A (W) www.fairchildsemi.com4

Figure 3. Normalized Maximum Transient Thermal Impedance

Figure 4. Peak Current Capability

Typical Characteristics

110100

0.1

1

10

100

1000

10us

DC

10ms

1ms

100us

I

D

, DRAIN CURRENT (A)

VDS, DRAIN-SOURCE VOLTAGE (V)

LIMITED BY r

DS(ON)

AREA MAY BE

OPERATION IN THIS

TC = 25oC

TJ = MAX RATED

SINGLE PULSE

BY PACKAGE

CURRENT LIMITED

0.01 0.1 1 10 100 1000

1

10

100

STARTING TJ = 150OC

STARTING TJ = 25OC

I

AS

, AVALANCHE CURRENT (A)

tAV, TIME IN AVALANCHE (ms)

200

tAV = (L)(IAS)/(1.3*RATED BV

DSS

- VDD)

If R = 0

If R

≠

0

t

AV

= (L/R)ln[(IAS*R)/(1.3*RATED BV

DSS

- VDD) +1]

2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

0

20

40

60

80

100

120

140

PULSE DURATION=80μs
DUTY CYCLE=0.5% MAX

TJ = - 55OC

TJ = 25OC

TJ = 175OC

V

DD

= 6V

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0

20

40

60

80

100

120

4.0V

4.5V

5.0V

VGS=10V

PULSE DURATION =80μS
DUTY CYCLE =0.5% MAX

I

D

, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

4.56.07.59.0

4

8

12

16

20

R

DS(ON)

, DRAIN TO SOURCE

ON-RESISTANCE

(mΩ )

TJ = 25oC

TJ = 175oC

ID=12A

PULSE DURATION=80μS
DUTY CYCLE=0.5%MAX

VGS, GATE TO SOURCE VOLTAGE (V)

3.5

10

-80 -40 0 40 80 120 160 200

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

PULSE DURATION =80μS
DUTY CYCLE =0.5% MAX

ID = 50A

V

GS

= 10V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

TJ, JUNCTION TEMPERATURE(oC)

Figure 5. Forward Bias Safe Operating Area

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Indutive Switching

Capability

FDD8445 N-Channel PowerTrench

®

MOSFET

Figure 7.

FDD8445 Rev A (W) www.fairchildsemi.com5

Figure 9. Drain to Source On-Resistance

Variation vs Gate to Source Voltage

Transfer Characteristics

Figure 8. Saturation Characteristics

Figure 10.

Normalized Drain to Source On

Resistance vs Junction Temperature

Typical Characteristics

-80 -40 0 40 80 120 160 200

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

VGS=V

DS

ID =250μA

NORMALIZED GATE

THRESHOLD VOLTAGE

TJ, JUNCTION TEMPERATURE (oC)

-80 -40 0 40 80 120 160 200

0.90

0.95

1.00

1.05

1.10

ID =250μA

NORMALIZED DRAIN TO SOURCE

BREAKDOWN VOLTAGE

TJ, JUNCTION TEMPERATURE (oC)

0.1 1 10

100

1000

10000

C

RSS

C

OSS

C

ISS

f = 1MHz
V

GS

= 0V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

40

0204060

0

2

4

6

8

10

VDD=25V

VDD=15V

VDD=20V

ID=50A

V

GS

, GATE TO SOURCE VOLTAGE(V)

Qg , GATE CHARGE (nC)

Figure 11. Normalized Gate Threshold Voltage vs

Junction Temperature

Figure 12. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

FDD8445 N-Channel PowerTrench

®

MOSFET

Figure 13.

Capacitance vs Drain to Source

Voltage

FDD8445 Rev A (W) www.fairchildsemi.com6

Figure 14. Gate Charge vs Gate to Source

Voltage

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
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WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.

PRODUCT STATUS DEFINITIONS
Definition of Terms

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Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for product

Preliminary First Production This datasheet contains preliminary data; supplementary data

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product that has

development. Specifications may change in any manner
without notice.

will be published at a later date. Fairchild Semiconductor
reserves the right to make changes at any time without notice
to improve design.

Semiconductor reserves the right to make changes at any
time without notice to improve design.

been discontinued by Fairchild Semiconductor.The datasheet
is printed for reference information only.

Rev. I24

FDD8445 Rev A (W) www.fairchildsemi.com7