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FDD6635
35V N-Channel PowerTrench® MOSFET
FDD6635 35V N-Channel PowerTrench
February 2007
tm
General Description
This N-Channel MOSFET has been produced using
Fairchild Semiconductor’s proprietary PowerTrench
technology to deliver low Rdson and optimized Bvdss
capability to offer superior performance benefit in the
applications.
Applications
• Inverter
• Power Supplies
Features
• 59 A, 35 V R
R
• Fast Switching
• RoHS compliant
= 10 mΩ @ VGS = 10 V
DS(ON)
= 13 mΩ @ VGS = 4.5 V
DS(ON)
D
®
MOSFET
D
G
S
D-PAK
TO-252
(TO-252)
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
G
S
Symbol Parameter Ratings Units
V
Drain-Source Voltage 35 V
DSS
V
DS(Avalanche)
V
GSS
ID Continuous Drain Current @TC=25°C (Note 3) 59 A
@TA=25°C (Note 1a) 15
Pulsed (Note 1a) 100
EAS Single Pulse Avalanche Energy (Note 5) 113 mJ
PD
TJ, T
Drain-Source Avalanche Voltage (maximum) (Note 4) 40 V
Gate-Source Voltage
Power Dissipation @TC=25°C (Note 3) 55
@TA=25°C (Note 1a) 3.8
@T
Operating and Storage Junction Temperature Range –55 to +150
STG
=25°C (Note 1b) 1.6
A
±20
V
W
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1) 2.7
(Note 1a) 40
(Note 1b) 96
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
FDD6635 FDD6635 D-PAK (TO-252) 13’’ 12mm 2500 units
©2007 Fairchild Semiconductor Corporation
FDD6635 Rev. C2(W)
www.fairchildsemi.com
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FDD6635 35V N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics(Note 2)
BV
Drain–Source Breakdown Voltage
DSS
ΔBVDSS
ΔT
J
I
DSS
I
Gate–Body Leakage
GSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current V
= 0 V, ID = 250 μA
V
GS
I
= 250 μA, Referenced to 25°C
D
= 28 V, VGS = 0 V 1
DS
V
= ±20 V, VDS = 0 V
GS
35 V
32
mV/°C
μA
±100
nA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
ΔVGS(th)
ΔTJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= VGS, ID = 250 μA
V
DS
I
= 250 μA, Referenced to 25°C
D
VGS = 10 V, ID = 15 A
V
= 4.5 V, ID = 13 A
GS
V
= 10 V, ID = 15 A, TJ=125°C
GS
gFS Forward Transconductance VDS = 5 V, ID = 15 A 53 S
1 1.9 3 V
–5
8.2
10.2
12.4
10
13
16
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 1400 pF
iss
C
Output Capacitance 317 pF
oss
C
Reverse Transfer Capacitance
rss
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.4
= 20 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
137 pF
Ω
MOSFET
Switching Characteristics (Note 2)
t
Turn–On Delay Time 11 20 ns
d(on)
tr Turn–On Rise Time 6 12 ns
t
Turn–Off Delay Time 28 45 ns
d(off)
tf Turn–Off Fall Time
Q
Total Gate Charge, VGS = 10V 26 36 nC
g (TOT)
Qg Total Gate Charge, VGS = 5V 13 18 nC
Qgs Gate–Source Charge 3.9 nC
Qgd Gate–Drain Charge
= 20 V, ID = 1 A,
V
DD
V
= 10 V, R
GS
= 20 V, ID = 15 A
V
DS
GEN
= 6 Ω
14 25 ns
5.3 nC
®
FDD6635 Rev. C2(W) www.fairchildsemi.com
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FDD6635 35V N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain–Source Diode Characteristics
VSD Drain–Source Diode Forward
Voltage
trr
Qrr
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where P
4. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
is guaranteed by design while R
θJC
is maximum power dissipation at TC = 25°C and R
D
R
a) R
P
D
DS(ON)
θCA
θJA
2
1in
pad of 2 oz copper
VGS = 0 V, IS = 15 A (Note 2) 0.8 1.2 V
IF = 15 A, diF/dt = 100 A/µs
26 ns
16 nC
is determined by the user's board design.
= 40°C/W when mounted on a
is at T
DS(on)
and VGS = 10V. Package current limitation is 21A
J(max)
b) R
= 96°C/W when mounted
θJA
on a minimum pad.
®
MOSFET
5. Starting T
= 25°C, L = 1mH, IAS = 15A, VDD = 35V, VGS = 10V
J
FDD6635 Rev. C2(W) www.fairchildsemi.com
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Typical Characteristics
FDD
80
VGS=10V
70
6.0V
60
50
40
30
, DRAIN CURRENT (A)
D
20
I
10
0
00.511.522.53
V
DS
4.0V
4.5V
3.5V
3.0V
, DRAIN-SOURCE VOLTAGE (V)
2.4
2.2
2
VGS = 3.5V
1.8
1.6
, NORMALIZED
1.4
DS(ON)
R
1.2
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 1020304050607080
4.0V
4.5V
5.0V
, DRAIN CURRENT (A)
I
D
6.0V
10V
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
1.8
ID = 15A
1.6
V
= 10V
GS
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
T
, JUNCTION TEMPERATURE (oC)
J
0.029
0.025
0.021
0.017
0.013
, ON-RESISTANCE (OHM)
TA = 25oC
DS(ON)
0.009
R
0.005
246810
TA = 125oC
, GATE TO SOURCE VOLTAGE (V)
V
GS
ID = 7.5A
V N-
h
nn
l P
w
rTr
n
h
®
M
FET
Figure 3. On-Resistance Variation with
Temperature
80
VDS = 5V
70
60
50
40
30
, DRAIN CURRENT (A)
D
20
I
10
0
1.5 2 2.5 3 3.5 4 4.5
, GATE TO SOURCE VOLTAGE (V)
V
GS
TA =-55oC
125oC
25oC
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
00.20.40.60.811.2
TA = 125oC
25oC
V
, BODY DIODE FORWARD VOLTAG E (V)
SD
-55oC
Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6635 Rev. C2(W) www.fairchildsemi.com
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Typical Characteristics
FDD
10
ID = 15A VDS = 10V
8
6
4
2
, GATE-SOURCE VOLTAGE (V)
GS
V
0
0 5 10 15 20 25 30
Qg, GATE CHARGE (nC)
20V
15V
2000
1600
1200
800
CAPACITANCE (pF)
400
0
0 5 10 15 20 25 30
C
ISS
C
OSS
C
RSS
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics
1000
R
LIMIT
DS(ON)
100
10
1
VGS = 10V
SINGLE PULSE
, DRAIN CURRENT (A)
D
I
R
= 96oC/W
θJA
0.1
0.01
= 25oC
T
A
0.01 0.1 1 10 100
, DRAIN-SOURCE VOLTAGE (V)
V
DS
1s
10s
DC
100ms
10ms
1ms
100µs
100
80
60
40
20
P(pk), PEAK TRANSIENT POWER (W)
0
0.01 0.1 1 10 100 1000
t
, TIME (sec)
1
f = 1MHz
V
GS
SINGLE PULSE
= 96°C/W
R
JA
θ
T
= 25°C
A
= 0 V
V N-
h
nn
l P
w
rTr
n
h
®
M
FET
Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum
Power Dissipation
100
80
60
40
20
I(pk), PEAK TRANSIENT CURRENT (A)
0
0.1 1 10 100 1000
t
, TIME (sec)
1
SINGLE PULSE
= 96癈/W
R
θJA
T
= 25癈
A
Figure 11. Single Pulse Maximum Peak
Current
1000
TJ = 25oC
100
10
, AVALANCHE CURRENT (A)
(AS)
I
1
0.001 0.01 0.1 1 10
t
, TIME IN AVANCHE(ms)
AV
Figure 12. Unclamped Inductive Switching
Capability
FDD6635 Rev. C2(W) www.fairchildsemi.com
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T
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Typical Characteristics
1
THERMAL RESISTANCE
r(t), NO RMA L IZ ED EF F ECTIV E TRANSIEN
0.001
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
D = 0.5
0.2
0.1
0.01
0.1
0.05
0.02
0.0
SINGLE PULSE
0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
Figure 13. Transient Thermal Response Curve
R
(t) = r(t) * R
JA
θ
R
= 96 °C/W
JA
θ
P(pk)
t
1
T
- TA = P * R
J
Duty Cycle, D = t
FDD
V N-
JA
θ
h
t
2
(t)
JA
θ
/ t
1
2
nn
l P
w
rTr
n
h
®
M
FET
FDD6635 Rev. C2(W) www.fairchildsemi.com
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Test Circuits and Waveforms
FDD
L
V
V
DS
DS
V
V
GS
GS
R
R
GEN DUT
GEN DUT
0V
0V
V
V
tp
tp
GS
GS
vary tPto obtain
vary tPto obtain
required peak I
required peak I
AS
AS
L
+
+
V
V
DD
DD
-
-
I
I
AS
AS
0.01Ω
0.01Ω
Figure 14. Unclamped Inductive Load Test
Circuit
Drain Current Regulator
Drain Current Regulator
Same type as DUT
Same type as DUT
+
+
10V
10V
-
-
10μF
10μF
50kΩ
50kΩ
1μF
1μF
V
V
GS
GS
DUT
DUT
+
+
V
V
DD
DD
-
-
BV
BV
DSS
DSS
t
t
P
P
I
I
AS
AS
t
t
AV
AV
V
V
DS
DS
V
V
DD
DD
Figure 15. Unclamped Inductive Waveforms
Q
Q
G
G
Q
Q
GD
GD
V
V
10V
10V
GS
GS
Q
Q
GS
GS
V N-
h
nn
l P
w
rTr
n
h
®
M
FET
Charge, (nC)
I
I
g(REF)
g(REF)
Charge, (nC)
Figure 16. Gate Charge Test Circuit Figure 17. Gate Charge Waveform
R
R
R
GEN
GEN
V
V
GS
GS
Pulse Width ≤ 1μs
Pulse Width ≤ 1μs
Duty Cycle ≤ 0.1%
Duty Cycle ≤ 0.1%
R
L
V
V
DS
DS
V
V
GS
GS
L
+
+
DUT V
DUT V
-
-
DD
DD
V
V
DS
DS
0V
0V
V
V
GS
GS
0V
0V
10%
10%
t
t
d(ON)
d(ON)
90%
90%
t
t
ON
ON
t
t
r
r
10%
10%
50%
50%
Pulse Width
Pulse Width
t
t
d(OFF)
d(OFF)
90%
90%
t
t
OFF
OFF
50%
50%
t
t
f
f
10%
10%
90%
90%
Figure 18. Switching Time Test Circuit Figure 19. Switching Time Waveforms
FDD6635 Rev. C2(W) www.fairchildsemi.com
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
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PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
®
UniFET™
VCX™
Wire™
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS
WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22
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