Datasheet FDD6780A, FDU6780A-F071 Datasheet (Fairchild)

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Page 1

January 2009

FDD6780A / FDU6780A_F071

N-Channel PowerTrench® MOSFET

25 V, 8.6 mΩ Features

 Max r  Max r  100% UIL test  RoHS Compliant

= 8.6 mΩ at VGS = 10 V, ID = 16.4 A

DS(on)

= 19.0 mΩ at VGS = 4.5 V, ID = 12.2 A

DS(on)

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r switching speed.

DS(on)

and fast

Applications

 Vcore DC-DC for Desktop Computers and Servers  VRM for Intermediate Bus Architecture

FDD6780A / FDU6780A_F071 N-Channel Power Trench

D-PAK (TO-252)

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 25 V Gate to Source Voltage ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 30

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 100 Single Pulse Avalanche Energy (Note 3) 24 mJ Power Dissipation TC = 25 °C 32.6 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +175 °C

Short-Lead I-PAK (TO-251AA)

= 25 °C unless otherwise noted

= 25 °C 48

= 25 °C (Note 1a) 16.4

= 25 °C (Note 1a) 3.7

Thermal Characteristics

θJC

θJA

Thermal Resistance, Junction to Case TO-252, TO-251 4.6 Thermal Resistance, Junction to Ambient TO-252 (Note 1a) 40

Package Marking and Ordering Information

MOSFET

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

FDD6780A FDD6780A D-PAK (TO-252) 13 ’’ 12 mm 2500 units FDU6780A FDU6780A_F071 TO-251AA N/A(Tube) N/A 75 units

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FDD6780A / FDU6780A_F071 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

∆BV ∆T

DSS

GSS

DSS

Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 25 V Breakdown Voltage Temperature

DSS

Coefficient

Zero Gate Voltage Drain Current VDS = 20 V, V Gate to Source Leakage Current VGS = ±20 V, V

= 250 µA, referenced to 25 °C 14 mV/°C

= 0 V 1 µA

= 0 V ±100 nA

On Characteristics

GS(th)

∆V ∆T

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 1.0 1.9 3.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 250 µA, referenced to 25 °C -5 mV/°C

= 10 V, ID = 16.4 A 6.8 8.6

= 10 V, ID = 16.4 A

Short-Lead I-PAK version V

= 4.5 V, ID = 12.2 A 14.1 19.0

= 4.5 V, ID = 12.2 A

Short-Lead I-PAK version V

= 10 V , ID = 16.4 A, TJ = 150 °C 10.3 13.0

7.0 8.8

14.3 19.2

Forward Transconductance VDS = 5 V, ID = 16.4 A 70 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 197 265 pF Reverse Transfer Capacitance 181 275 pF

= 13 V, VGS = 0 V,

f = 1MHz

Gate Resistance f = 1MHz 1.2 Ω

927 1235 pF

mΩ

MOSFET

Switching Characteristics

d(on)

d(off)

Q Q Q Q

g g gs gd

Turn-On Delay Time Rise Time 310ns Turn-Off Delay Time 16 29 ns Fall Time 310ns Total Gate Charge VGS = 0 V to 10 V Total Gate Charge VGS = 0 V to 5 V 9.2 13 nC Gate to Source Charge 2.8 nC Gate to Drain “Miller” Charge 4.0 nC

Drain-Source Diode Characteristics

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 4 10 nC

714ns

= 13 V, ID = 16.4 A,

= 10 V, R

GEN

= 6 Ω

17 24 nC

= 13 V,

= 16.4 A

= 0 V, IS = 3.1 A (Note 2) 0.8 1.2

= 0 V, IS = 16.4 A (Note 2) 0.9 1.3

= 16.4 A, di/dt = 100 A/µs

15 27 ns

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Notes: 1: R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

θJA

is guaranteed by design while R

θJC

is determined by the user’s board des ign.

θJA

FDD6780A / FDU6780A_F071 N-Channel Power Trench

40 °C/W when mounted on a 1 in2 pad of 2 oz copper

2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: EAS of 24 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 7 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 13 A.

96 °C/W when mounted on a minimum pad.

MOSFET

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Typical Characteristics T

= 25 °C unless otherwise noted

FDD6780A / FDU6780A_F071 N-Channel Power Trench

100

VGS = 10 V

VGS = 8 V

DRAIN CURRENT (A)

0 0.5 1.0 1.5 2.0

Figure 1.

VGS = 6 V

DRAIN TO SOURCE VOLTAGE (V)

On-Region Characteristics Figure 2.

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

VGS = 4.5 V

VGS = 4 V

1.8

ID = 16.4 A

1.6

= 10 V

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150 175

JUNCTION TEMPERATURE

(

)

Figu r e 3. Nor m a lized O n - Resis t a nce

vs Junction Temperature

PULSE DURATION = 80 µs

VGS = 4 V

DUTY CYCLE = 0.5% MAX

= 4.5 V

NORMALIZED

VGS = 8 V

VGS = 6 V

= 10 V

DRAIN TO SOURCE ON-RESISTANCE

020406080100

DRAIN CURRENT (A)

Norma l i z e d O n - Resistanc e

vs Drain Current and Gate Voltage

)

Ω

(

DRAIN TO

DS(on)

SOURCE ON-RESISTANCE

46810

, GATE TO SOURCE VOLTA G E (V)

Figure 4.

On-Resistance vs Gate to

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

ID = 16.4 A

TJ = 150 oC

TJ = 25 oC

Source Voltage

MOSFET

100

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

= 3 V

, DRAIN CURRENT (A)

01234567

TJ = 175 oC

VGS, GATE TO SOURCE V O LTAGE (V)

Figure 5. Transfer Characteristics

TJ = 25 oC

TJ = -55 oC

100

= 0 V

, REVERSE DRAIN CURRENT (A)

TJ = 175 oC

0.1

0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Drain Diode

TJ = 25 oC

TJ = -55 oC

Forward Voltage vs Source Current

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FDD6780A / FDU6780A_F071 N-Channel Power Trench

Typical Characteristics T

= 25 °C unless otherwise noted

ID = 16.4 A

= 10 V

, GATE TO SOURCE VOLTAGE (V)

0369121518

Qg, GATE CHARGE (nC)

Figure 7.

Gate Charge Characteristics Figure 8.

100

TJ = 125 oC

TJ = 150 oC

, AVALANCHE CURRENT (A)

0.001 0.01 0.1 1 10 100

tAV, TIME IN AVALANCHE (ms)

Figure 9.

Unclamped Inductive

TJ = 25 oC

Switching Capability

VDD = 16 V

VDD = 13 V

3000

1000

CAPACITANCE (pF)

f = 1 MHz

= 0 V

100

0.1 1 10 30

VDS, DRAIN TO SOURCE VOLTA GE (V)

Capacitance vs Drain

to Source Voltage

= 10 V

Limited by P ackage

DRAIN CURRENT (A)

= 4.6 oC/W

θJC

25 50 75 100 125 150 175

CASE TEMPERATURE

Figure 10.

Maximum Continuous Drain

= 4.5 V

(

)

Current vs Case Temperature

iss

oss

rss

MOSFET

200 100

THIS AREA IS

, DRAIN CURRENT (A)

LIMITED BY r

0.1

0.1 1 10 70

DS(on)

SINGLE PULSE T

= MAX RATED

= 4.6 oC/W

= 25 oC

VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe

Operating Area

2000

10 us

100 us

1 ms 10 ms

100 ms

1000

PEAK TRANSIENT POWER (W)

)

(

100

VGS = 10 V

-5

10-410

-3

t, PULSE WIDTH (sec)

-2

SINGLE PULSE R

= 4.6 oC/W

= 25 oC

-1

Figure 12. Single Pulse Maximum

Power Dissipation

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FDD6780A / FDU6780A_F071 N-Channel Power Trench

Typical Characteristics T

0.1

IMPEDANCE,

NORMALIZED THERMAL

0.01 10

2 1

0.1

IMPEDANCE,

NORMALIZED THERMAL

0.01

0.003 10

DUTY CYCLE-DESCENDING O RD ER

D = 0.5

0.2

0.1

0.05

0.02

0.01

-5

-4

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

-4

-3

= 25 °C unless otherwise noted

SINGLE PULSE

= 4.6 oC/W

-3

-2

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

t, RECTANGULAR PULSE DURATION (sec)

Figure 13. Transient Thermal Response Curve

SINGLE PULSE R

= 96 oC/W

(Note 1 b)

-2

-1

t, RECTANGULAR PULSE DURATION (sec)

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

1/t2

x R

+ T

θJC

x R

+ T

θJA

100 1000

MOSFET

Figure 14.

Transient Thermal Response Curve

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™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FlashWriter FPS™ F-PFS™

* EZSWITCH™ and FlashWriter

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® ®

are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FDD6780A / FDU6780A_F071 N-Channel Power Trench

MOSFET

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As used herein:

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Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the desi gn specificatio ns for product deve lopment. S pecifications may change in any manner without notice.

Datasheet contains preliminary data; supplement ary dat a will be publishe d at a later date. Fairchild Semiconductor reserves the right to make changes at any time without no tice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I37

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