Diodes PAM8403 User Manual

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FILTERLESS 3W CLASS-D STEREO AUDIO AMPLIFIER

Description

The PAM8403 is a 3W, class-D audio amplifier. It offers low THD+N,

allowing it to achieve high-quality sound reproduction. The new

filterless architecture allows the device to drive the speaker directly,

requiring no low-pass output filters, thus saving system cost and PCB

area.

With the same numbers of external components, the efficiency of the

PAM8403 is much better than that of Class-AB cousins. It can extend

the battery life, which makes it well-suited for portable applications.

The PAM8403 is available in SOP-16 package.

Pin Assignments

Features

 3W Output at 10% THD with a 4Ω Load and 5V Power Supply

 Filterless, Low Quiescent Current and Low EMI

 Low THD+N

 Superior Low Noise

 Efficiency up to 90%

 Short Circuit Protection

 Thermal Shutdown

 Few External Components to Save the Space and Cost

 Pb-Free Package

Applications

 LCD Monitors / TV Projectors

 Notebook Computers

 Portable Speakers

 Portable DVD Players, Game Machines

 Cellular Phones/Speaker Phones

Typical Applications Circuit

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PAM8403

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Pin Descriptions

Pin

Number

1 +OUT_L Left Channel Positive Output

2 PGND Power GND

3 -OUT_L Left Channel Negative Output

4 PVDD Power VDD

5 MUTE Mute Control Input (active low)

6 VDD Analog VDD

7 INL Left Channel Input

8 VREF Internal analog reference, connect a bypass capacitor from VREF to GND.

9 NC No Connact

10 INR Right Channel Input

11 GND Analog GND

12 SHND Shutdown Control Input (active low)

13 PVDD Power VDD

14 -OUT_R Right Channel Negative Output

15 PGND Power GND

16 +OUT_R Right Channel Positive Output

Pin

Name

Functional Block Diagram

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Function

PAM8403

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Absolute Maximum Ratings (@T

These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may
affect device reliability. All voltages are with respect to ground.

Parameter Rating Unit

Supply Voltage 6.0

Input Voltage

Operation Temperature Range -40 to +85

Maximum Junction Temperature 150

Operation Junction Temperature -40 to +125

Storage Temperature -65 to +150

Soldering Temperature 300, 5 sec

Recommended Operating Conditions (@T

Parameter Rating Unit

Supply Voltage Range 2.5 to 5.5 V

Operation Temperature Range -40 to +85 °C

Junction Temperature Range -40 to +125 °C

= +25°C, unless otherwise specified.)

A

-0.3 to V

+0.3V

DD

= +25°C, unless otherwise specified.)

A

V

°C

Thermal Information

Parameter Package Symbol Max Unit

Thermal Resistance (Junction to Ambient) SOP-16

Thermal Resistance (Junction to Case) SOP-16

θ

JA

θ

JC

110

23

°C/W

PAM8403

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Electrical Characteristics (@T

Symbol Parameter Test Conditions Min Typ Max Units

VDD

PO

THD+N

GV

PSRR Power Supply Ripple Rejection

CS

SNR Signal-to-Noise Ratio

VN

Dyn Dynamic Range

I

MUTE

ISD

R

DS(ON)

fSW

VOS

VIH

VIL

VIH

VIL

OTP Over Temperature Protection

OTH Over Temperature Hysterisis 30 V

PAM8403

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Supply Voltage 2.5 5.5 V

Output Power

Total Harmonic Distortion Plus
Noise

Closed Loop Gain

Crosstalk

Output Noise

η Efficiency

Quiescent Current

IQ

Muting Current

Shutdown Current

Static Drain-to-Source
On-State Resistor

Switching Frequency

Output Offset Voltage

Enable Input High Voltage

Enable Input Low Voltage

MUTE Input High Voltage

MUTE Input Low Voltage

= +25°C, VDD = 5V, Gain = 24dB, RL = 8Ω, unless otherwise specified.)

A

= 5.0V

V

DD

THD+N = 10%, f = 1KHz, R

= 4Ω

L

VDD = 3.6V

VDD = 3.2V

= 5.0V

V

DD

THD+N = 1%, f = 1KHz, RL = 4Ω

VDD = 3.6V

VDD = 3.2V

= 5.0V

V

DD

THD+N = 10%, f = 1KHz, RL = 8Ω

VDD = 3.6V

VDD = 3.2V

= 5.0V

V

DD

THD+N = 1%, f = 1KHz, RL = 8Ω

VDD = 3.6V

VDD = 3.2V

= 5.0V, PO = 1W, RL = 8Ω

V

DD

VDD = 3.6V, PO = 0.1W, RL = 8Ω

VDD = 5.0V, PO = 0.5W, RL = 4Ω

VDD = 3.6V, PO = 0.2W, RL = 4Ω

f = 1kHz

f = 1kHz

VDD = 3V to 5V

V

= 5.0V, Inputs AC-Grounded

DD

with C

= 0.47µF

IN

V

= 5.0V, PO = 0.5W, RL = 8Ω,

DD

= 20db

G

V

V

= 5.0V, V

DD

V

= 5.0V, Inputs AC-Grounded

DD

with C

= 0.47µF

IN

V

= 5.0V, THD = 1%

DD

R

= 8Ω, THD = 10%

L

= 1V, GV = 20db

ORMS

RL = 4Ω, THD = 10%

= 5.0V

V

DD

VDD = 3.6V

f = 100Hz -59

f = 1kHz -58

f = 1kHz -95 dB

f = 1kHz 80 dB

No A-Weighting 100

A-Weighting 150

f = 1kHz 90 dB

f = 1kHz

No Load

VDD = 3.0V

VDD = 5.0V V

MUTE

= 0.3V

VDD = 2.5V to 5.5V VSD = 0.3V

IDS = 500mA, VGS = 5V

PMOS 180

NMOS 140

VDD = 3.0V to 5.0V

VIN = 0V, VDD = 5.0V

VDD = 5.0V

VDD = 5.0V

VDD = 5.0V

VDD = 5.0V

No Load, Junction Temperature

V

DD

= 5.0V

3.2

1.6

1.3

2.5

1.3

0.85

1.8

0.9

0.6

1.4

0.72

0.45

0.15

0.11

0.15

0.11

24 dB

87

83

16

10

8

3.5 mA

< 1 µA

260 kHz

10 mV

1.5 1.4

0.7 0.4

1.5 1.4

0.7 0.4

140 V

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W

W

W

W

%

%

dB

µV

%

mA

mΩ

V

V

November 2012

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