Diodes PAM8303C User Manual

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Description

The PAM8303C is a 3W mono filterless Class-D amplifier with high PSRR and differential input that eliminate noise and RF rectification.

Features like 90% efficiency and small PCB area make the PAM8303C Class-D amplifier ideal for cellular handsets. The filterless architecture requires no external output filter, fewer external components, less PCB area and lower system costs, and simplifies application design.

The PAM8303C features short circuit protection and thermal shutdown.

The PAM8303C is available in 9-ball WCSP, MSOP-8 and DFN 3x3 8-pin packages.

MONO CLASS-D AUDIO POWER AMPLIFIER

Pin Assignments

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PAM8303C

ULTRA LOW EMI, 3W FILTERLESS

Features

 Ultra Low EMI, -20dB Better Than FCC Class-B @ 300MHz  High Efficiency up to 90% @1W with an 8Ω Speaker  Shutdown Current <1µA  3W@10% THD Output with a 4Ω Load at 5V Supply  Demanding Few External Components  Superior Low Noise without Input  Supply Voltage from 2.8V to 5.5V  Short Circuit Protection  Thermal Shutdown  Available in Space Saving Packages: 1.45mmx1.45mm

WCSP9, MSOP-8, DFN3x3-8

 Pb-Free Package

Applications

 Cellular Phones/Smart Phones  MP4/MP3  GPS  Digital Photo Frame  Electronic Dictionary  Portable Game Machines

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Typical Applications Circuit

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PAM8303C

Pin Descriptions

Name

OUT+ C3 1 5 1 Positive BTL Output PVDD B2 2 — 2 Power Supply

VDD B1 3 6 3 Analog Power Supply

IN- C1 4 4 4 Negative Differential Input IN+ A1 5 3 5 Positive Differential Input SD C2 6 1 6 Shutdown Terminal (active low)

GND A2, B3 7 7 7 Ground

OUT- A3 8 8 8 Negative BTL Output

NC — — 2 —

WCSP(A) DFN3X3-8 (B) DFN3X3-8 (C) MSOP-8 (B)

Pin Name

Function

Functional Block Diagram

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PAM8303C

Absolute Maximum Ratings (@T

These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may affect device reliability. All voltages are with respect to ground.

Parameter Rating Unit

Supply Voltage 6.0 Input Voltage

Maximum Junction Temperature 150 Storage Temperature -65 to +150

Soldering Temperature 250, 10 sec

Recommended Operating Conditions (@T

Parameter Rating Unit

Supply Voltage Range 2.8 to 5.5 V Ambient Temperature Range -40 to +85 °C Junction Temperature Range -40 to +125 °C

= +25°C, unless otherwise specified.)

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-0.3 to V

DD

+0.3

= +25°C, unless otherwise specified.)

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V

°C

Thermal Information

Parameter Package Symbol Max Unit

WCSP 1.45x1.45

Thermal Resistance (Junction to Ambient)

Thermal Resistance (Junction to Case) MSOP-8

Note: For the 9-pin CSP package, the thermal resistance is highly dependent on the PCB heat sink area.

For example, the Θ using ground and power planes, the value is around 90°C/W.

can equal to 195°C/W with 50mm2 total area or 135°C/W with 500mm2 area. When

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PAM8303C

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MSOP-8 180

DFN3x3-8 47.9

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θ

JC

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90-220

75

°C/W

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PAM8303C

Electrical Characteristics (@T

Symbol Parameter Test Conditions Min Typ Max Units

VDD

PO

THD+N

PSRR Power Supply Ripple Rejection

Dyn Dynamic Range

VN

CMRR Common Mode Rejection Ratio

ISD

R

DS(ON)

RIN fSW GV

VOS

VIH VIL

Supply Voltage

Output Power

Total Harmonic Distortion Plus Noise

Output Noise Inputs AC-Grounded

η Peak Efficiency

Quiescent Current

IQ

Shutdown Current

Static Drain-to-Source On-State Resistor

Input Resistance Switching Frequency Closed Loop Gain Output Offset Voltage Enable Input High Voltage Enable Input Low Voltage

= +25°C, VDD = 5V, Gain = 2V/V, RL = L(33µH) + R + L(33µH), unless otherwise specified.)

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THD+N = 10%, f = 1KHz, R = 4Ω

THD+N = 1%, f = 1KHz, R = 4Ω

THD+N = 10%, f = 1KHz, R = 8Ω

THD+N = 1%, f = 1KHz, R = 8Ω

= 5.0V, PO = 1W, R = 8Ω

V

DD

VDD = 3.6V, PO = 0.1W, R = 8Ω VDD = 3.2V, PO = 0.1W, R = 8Ω VDD = 5.0V, PO = 0.5W, R = 4Ω VDD = 3.6V, PO = 0.2W, R = 4Ω VDD = 3.2V, PO = 0.1W, R = 4Ω

V

= 3.6V, Inputs AC-Grounded

DD

with C

= 1µF

IN

V

= 5V, THD = 1%, R = 8Ω

DD

= 5.0V

V

DD

VDD = 3.6V VDD = 3.2V V

= 5.0V

DD

VDD = 3.6V VDD = 3.2V V

= 5.0V

DD

VDD = 3.6V VDD = 3.2V

= 5.0V

V

DD

VDD = 3.6V VDD = 3.2V

f = 1kHz

f = 217Hz -63 -55 f = 1kHz -62 -55 f = 10kHz -52 -40 f = 1kHz 85 95

2.8 5.5 V

2.85 3.00

1.65 1.80

1.20 1.35

2.50 2.66

1.15 1.30

0.85 1.0

1.65 1.8

0.75 0.9

0.55 0.7

1.3 1.5

0.55 0.72

0.40 0.55

0.28 0.35

0.40 0.45

0.55 0.60

0.20 0.25

0.35 0.40

0.5 0.55

No A-Weighting 50 100 A-Weighting 30 60

V

= 100m, VPP, f =1kHz

IC

= 8Ω, THD = 10%

R

L

RL = 4Ω, THD = 10%

= 5.0V

V

DD

VDD = 3.6V

f = 1kHz

R = 8Ω

VDD = 3.0V VDD = 3.0V to 5.0V VSD = 0.3V

V

= 5.0V

CSP Package, High Side PMOS plus Low Side NMOS,

I = 500mA MSOP/DFN package,

High Side PMOS plus Low Side NMOS, I = 500mA

DD

VDD = 3.6V

VDD = 3.0V

V

= 5.0V

DD

VDD = 3.6V

VDD = 3.0V

VDD = 3V to 5V VDD = 3V to 5V Input AC-Ground, VDD = 5V VDD = 5V VDD = 5V

40 63 dB 85 90 80 86 %

7.5 10

4.6 7

3.6 5 mA

0.5 2 µA 280 350 300 375 325 400 365 420 385 450 410 500 150 KΩ

200 250 300 KHz

300kΩ/R

dB

I

10 50 mV

1.5 V

0.3 V

W

%

dB

µV

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Typical Performance Characteristics (@T

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PAM8303C

= +25°C, VDD = 5V, f = 1kHz, Gain = 2V/V, unless otherwise specified.)

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Typical Performance Characteristics (cont.) (@T

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PAM8303C

= +25°C, VDD = 5V, f = 1kHz, Gain = 2V/V, unless otherwise specified.)

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PAM8303C

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