Diodes PAM8003 User Manual

Description
The PAM8003 is a 2.5W, Class-D audio amplifier. It offers low
THD+N, allowing it to achieve high quality sound reproduction. The
new filterless architecture allows the device to drive the speaker
directly, requiring no low-pass output filters, thus saving system cost
and PCB area.
With the same numbers of external components, the efficiency of the
PAM8003 is much better than that of class-AB cousins. It can extend
the battery life, ideal for portable applications.
The PAM8003 is available in SOP-16L package
Features
2.5W Output at 10% THD with a 5 Load and 5V Power Supply
Filterless, Low Quiescent Current and Low EMI
Low THD+N
64-Step DC Volume Control
Superior Low Noise
Short Circuit Protection
Thermal Shutdown
Few External Components to Save the Space and Cost
RoHS Pass and Green Package
Typical Applications Circuit
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Diodes Incorporated
PAM8003
FILTERLESS 2.5W CLASS-D STEREO AUDIO AMPLIFIER
Pin Assignments
Applications
LCD Monitors / TV
Notebook Computers
Portable Speakers
Portable DVD Players, Game Machines
PAM8003
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Pin Descriptions
Pin
Number
1 PVDDL Left Channel Power Supply
2 -OUTL Left Channel Negative Output
3 PGNDL Left Channel Power GND
4 +OUTL Left Channel Positive Output
5 SHDN Shutdown Control Input (active low)
6 VREF Internal Analog Reference, Connect a Bypass Capacitor from VREF to GND
7 INL Left Channel Input
8 GND Analog Ground
9 VDD Analog Power Supply
10 INR Right Channel Input
11 NC Not Connected
12 VOLUME DC Volume Control to Set the Gain of Class-D
13 +OUTR Right Channel Positive Output
14 PGNDR Right Channel Power GND
15 -OUTR Right Channel Negative Output
16 PVDDR Right Channel Power Supply
Pin
Name
Function
Functional Block Diagram
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PAM8003
PAM8003
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PAM8003
Absolute Maximum Ratings (@T
These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may affect device reliability. All voltages are with respect to ground.
Parameter Rating Unit
Supply Voltage 6.0
Input Voltage
Maximum Junction Temperature 150
Storage Temperature -65 to +150
Soldering Temperature 300, 5 sec
Recommended Operating Conditions (@T
Parameter Rating Unit
Supply Voltage Range 2.5 to 5.5 V
Operation Temperature Range -40 to +85 °C
Junction Temperature Range -40 to +125 °C
= +25°C, unless otherwise specified.)
A
-0.3 to V
DD
+0.3
= +25°C, unless otherwise specified.)
A
V
°C
Thermal Information
Parameter Package Symbol Max Unit
Thermal Resistance (Junction to Ambient) SOP-16L
Thermal Resistance (Junction to Case) SOP-16L
JA
JC
110
23
°C/W
PAM8003
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PAM8003
Electrical Characteristics (@T
= +25°C, VDD = 5V, Gain = 24dB, R
A
= 8, unless otherwise specified.)
L
Symbol Parameter Test Conditions Min Typ Max Units
VIN
PO
THD+N
Supply Power
Output Power
Total Harmonic Distortion Plus Noise
PSRR Power Supply Ripple Rejection
CS
Crosstalk
SNR Signal-to-Noise
VN
Output Noise
Efficiency
Quiescent Current
IQ
ISD
R
DS(ON)
Shutdown Current
Static Drain-to-Source On-State Resistor
fsw Switching Frequency
VOS
VIH
VIL
Output Offset Voltage
Enable Input High Voltage
Enable Input Low Voltage
OTP Over Temperature Protection
OTH Over Temperature Hysterisis 30
THD+N = 10%, f = 1kHz, R
= 4 V
L
THD+N = 1%, f = 1kHz, RL = 4 V
THD+N = 10%, f = 1kHz, RL = 8 V
THD+N = 1%, f = 1kHz, RL = 8 V
V
= 5.0V, Po = 0.5W, RL = 8
DD
V
= 3.6V, Po = 0.5W, RL = 8
DD
V
= 5.0V, Po = 1W, RL = 4
DD
V
= 3.6V, Po = 1W, RL = 4
DD
V
= 5.0V, Inputs AC-Grounded with
DD
C
= 0.47F, Gv = 6dB
IN
V
= 5V, Po = 0.5W, RL = 8,
DD
Gv = 20dB
V
= 5V, Gv = 6dB
DD
V
= 5V, Inputs AC-Grounded with
DD
= 0.47F, GV = 6dB
C
IN
R
= 8, THD = 10%
L
RL = 4, THD = 10%
= 5.0V
V
DD
V
= 3.6V
DD
V
= 3.0V
DD
V
= 2.5V to 5.5V
DD
I
= 500mA,VGS = 5V
DS
V
= 3V to 5V
DD
V
V
V
= 0V, V
IN
= 5.0V
DD
= 5.0V
DD
DD
= 5V
No Load, Junction Temperature
= 5.0V
DD
= 5.0V
DD
= 5.0V
DD
= 5.0V
DD
f = 1kHz
f = 1kHz
f = 1kHz -70 dB
f = 1kHz -93 dB
f = 1kHz 86 dB
A-weighting 33
No A-weighting 50
f = 1kHz
No load
1 µA
PMOS 0.41
NMOS 0.27
210 kHz
10 mV
1.5
0.4
V
= 5V
DD
2.5 5.5 V
2.5 W
2.2 W
1.65 W
1.3 W
0.16
0.12
0.17
0.26
%
%
µV
87
79
%
4.5 7.0
4.0 6.5
mA
3.7 5.5
m
V
150
°C
PAM8003
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November 2012
© Diodes Incorporated
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