The AP2501 and AP2511 are single channel current-limited
integrated high-side power switches optimized for Universal Serial
Bus (USB) and other hot-swap applications. The family of devices
complies with USB standards and is available with both polarities of
Enable input.
The devices have fast short-circuit response time for improved
overall system robustness, and have integrated output discharge
function to ensure completely controlled discharging of the output
voltage capacitor. They provide a complete protection solution for
applications subject to heavy capacitive loads and the prospect of
short circuit, and offer reverse current blocking, over-current, over-
temperature and short-circuit protection, as well as controlled rise
time and under-voltage lockout functionality. A 7ms deglitch
capability on the open-drain Flag output prevents false over-current
reporting and does not require any external components.
All devices are available in SO-8, MSOP-8, MSOP-8EP,
U-DFN3030-8 and U-DFN2020-6 packages.
Features
Single channel current-limited power switch
Output discharge function
Fast short-circuit response time: 2µs
3.7A accurate current limiting (typ)
Reverse current blocking
70mΩ on-resistance (typ)
Input voltage range: 2.7V – 5.5V
Built-in soft-start with 0.6ms typical rise time
Over-current and thermal protection
Fault report (FLG) with blanking time (7ms typ)
ESD protection: 2kV HBM, 200V MM
Active low (AP2501) or active high (AP2511) enable
Ambient temperature range: -40°C to +85°C
SO-8, MSOP-8, MSOP-8EP, U-DFN3030-8 and U-DFN2020-6:
Available in “Green” Molding Compound (No Br, Sb)
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
UL Recognized, File Number E322375
IEC60950-1 CB Scheme Certified
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
EN 4 4 3 Enable Input. Active low (AP2501) or active high (AP2511).
FLG 5 5
OUT 6, 7 6, 7 5 Voltage Output Pin (all OUT pins must be tied together externally)
NC 8 8 6 No internal connection; recommend tie to OUT pins.
Exposed Pad Exposed Pad Not applicable Exposed Pad
MSOP-8EP,
U-DFN3030-8
AP2501/AP2511
Document number: DS35577 Rev. 6 - 2
SO-8,
MSOP-8
U-DFN2020-6
1 Voltage Input Pin. Connect a 0.1µF or larger ceramic capacitor from IN to
GND as close as possible. (all IN pins must be tied together externally)
4 Over-temperature and over-current fault reporting with 7ms deglitch; active
low open-drain output. FLG is disabled for 7ms after turn-on.
Exposed pad. It should be externally connected to GND and thermal mass for
enhanced thermal impedance. It should not be used as electrical ground
conduction path.
Maximum Continuous Load Current Internal Limited A
LOAD
T
Maximum Junction Temperature 150 °C
JMAX
TST Storage Temperature Range (Note 5) -65 to +150 °C
Notes: 4. All voltages referred to GND pin. Maximums are the lower of VIN + 0.3 and 6.5V
5. UL Recognized Rating from -30°C to +70°C (Diodes qualified T
Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings
only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may
be affected by exposure to absolute maximum rating conditions for extended periods of time.
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and
transporting these devices
from -65°C to +150°C)
ST
Recommended Operating Conditions(@T
= +25°C, unless otherwise specified.)
A
Symbol Parameter Min Max Unit
V
IN
I
OUT
VIH High-Level Input Voltage on EN 2.0 VIN V
VIL Low-Level Input Voltage on EN 0 0.8 V
TA Operating Ambient Temperature (Note 6), -40 +85 °C
Input voltage 2.7 5.5 V
Output Current 0 2.5 A
Note: 6. T
AP2501/AP2511
Document number: DS35577 Rev. 6 - 2
A(MAX)
= +70°C if V
≤ 4.1V and I
IN
= 2.5A to keep device from going into thermal protection.
Symbol Parameter Conditions (Note 7) Min Typ Max Unit
V
Input UVLO VIN rising 1.6 2.0 2.4 V
UVLO
ΔV
Input UVLO Hysteresis VIN decreasing 50 mV
UVLO
I
I
R
I
I
SHORT
T
I
LEAK-EN
I
LEAK-O
T
T
R
T
T
T
Notes: 7. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
8. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up power-down when V
discharge function offers a resistive discharge path for the external storage capacitor for limited time.
9. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.
10. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground
plane.
11. Device mounted on 1"x1" FR-4 substrate PCB, 2oz copper, with minimum recommended padon top layer and thermal vias to bottom layer ground
Input Shutdown Current Disabled, OUT = open 0.1 1.0 µA
SHDN
I
Input Quiescent Current Enabled, OUT = open 60 100 µA
Q
Input Leakage Current Disabled, OUT grounded 0.1 1.0 µA
LEAK
I
Reverse Leakage Current Disabled, V
REV
Switch on-resistance
DS(ON)
Over-Load Current Limit (Note 7) V
LIMIT
I
Current limiting trigger threshold Output Current Slew rate (<100A/s) 3.7 A
TRIG
Short-Circuit Current Limit Enabled into short circuit 3.7 A
Short-Circuit Response Time V
SHORT
V
EN Input Logic Low Voltage VIN = 2.7V to 5.5V 0.8 V
IL
V
EN Input Logic High Voltage VIN = 2.7V to 5.5V 2 V
IH
EN Input leakage VIN = 5V, V
Output leakage current Disabled, V
Output turn-on delay time CL = 1µF, R
D(ON)
TR Output turn-on rise time CL = 1µF, R
Output turn-off delay time CL = 1µF, R
D(OFF)
TF Output turn-off fall time CL = 1µF, R
FLG output FET on-resistance I
FLG
I
FLG Off Current V
FOH
FLG Blanking Time
BLANK
T
Discharge time CL= 1µF, VIN = 5V, disabled to V
DIS
R
Discharge resistance (Note 8) VIN = 5V, disabled, I
DIS
Thermal Shutdown Threshold Enabled 140
SHDN
Thermal Shutdown Hysteresis 20
HYS
Thermal Resistance Junction-to-
θJA
Ambient
= +25°C, VIN = +5.0V, C
A
= 0V, V
IN
V
= 5V, I
IN
VIN = 3.3V, I
= 5V, V
IN
= 0V to I
OUT
= 10mA 20 40 Ω
FLG
= 5V 0.01 1.00 µA
FLG
= 1A
OUT
OUT
= 4.5V -40°C≤ TA ≤85°C 2.8 3.7 4.6 A
OUT
OUT
= 0V and 5.5V 0.01 1.00 µA
EN
= 0V 0.5 1 µA
OUT
LOAD
LOAD
LOAD
LOAD
Assertion or deassertion due to overcurrent and
over-temperature condition