Datasheet VNS3NV04, VNN3NV04, VND3NV04-1, VND3NV04 Datasheet (SGS Thomson Microelectronics)

®

VNN3NV04 / VNS3NV04

/ VND3NV 04 / VND3NV0 4-1

“OMNIFE T II” :

FULLY AUTOPROTECTED POWER MOSFET

TYPE R

VNN3NV04
VNS3NV04
VND3NV04
VND3NV04-1

n

LINEAR CURRENT LIMITATION

n

THERMAL SHUT DOWN

n

SHORT CIRCUIT PROTECTION

n

INTEGRATED CLAMP

n

LOW CURRENT DRAWN FRO M INPUT PIN

n

DIAGNOSTIC FEEDBACK THROUGH INPUT

DS(on)

120 mΩ 3.5 A 40 V

I

lim

V

clamp

PIN

n

ESD PROTECTION

n

DIRECT ACCESS TO THE GATE OF THE

POWER MOSFET (ANALOG DRIVING)

n

COMPATIBLE WITH STANDARD POWER

MOSFET

DESCRIPTION

The VNN3NV04, VNS3NV04, VND3NV04
VND3NV04-1, are mon ol ithi c devic es desi g ned in
STMicroelectronics VIPower M0-3 Technology,

BLOCK DIAGRAM

2

3

2

1

SOT-223

3

1

TO252 (DPAK)

ORDER CODES:

SOT-223
SO-8
TO-252 (DPAK)
TO-251 (IPAK)

SO-8

1

TO251 (IPAK)

VNN3NV04
VNS3NV04
VND3NV04
VND3NV04-1

3

2

intended for replacement of standard Power
MOSFETS from DC up to 50KHz applications.
Built in thermal shutdown, l inear curren t limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be de tected by mon itori ng the
voltage at the input pin.

DRAIN

2

INPUT

1

Februa ry 2003 1/21

Gate

Control

Over

Temperature

Overvoltage

Clamp

Linear

Current

Limiter

3

SOURCE

FC01000

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

ABSOLUTE MAXIMUM RATI NG

Symbol Parameter

Drain-source Voltage (VIN=0V) Intern ally Clam p ed V
Input Voltage Internally Clamped V

IN

Input Current +/-20 mA
Minimum I nput Series Impedance 220 Ω
Drain Current Internally Limited A
Reverse DC Output Current -5.5 A
Electros tatic Discharge (R=1.5KΩ, C=100pF) 4000 V
Electros tatic Discharge on output pin only

(R=330Ω, C=150pF)
Total Dissipation at Tc=25°C 7 8.3 35 W

tot

Operating Junction Temperature Internally limited °C

j

Case Operating Temperature Internally limit ed °C

c

Storage Temperatu re -55 to 150 °C

R

V
V

V

DS

V

I

IN

IN MIN

I

D

I

R

ESD1

ESD2

P

T

T

T

stg

CONNECTION DIAGRAM (TO P VI EW)

SO-8 Pack ag e (*)

SOT-223 SO-8 DPAK/IPAK

Value

Unit

16500 V

SOURCE

1
SOURCE
SOURCE
INPUT

(*) For the pins configuration related to SOT-223, DPAK, IPAK see outlines at page 1.

4

CURRENT AND VOLTAGE CONVENTIONS

R

I

IN

IN

INPUT

V

IN

8

DRAIN
DRAIN
DRAIN

5

DRAIN

DRAIN

SOURCE

I

D

V

DS

2/21

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

THERMAL DATA

Symbol Parameter

R

thj-case

R

thj-lead

R

thj-amb

(*) When mounted on a standard single-sided FR4 board with 50mm

Thermal R esistance Junction-case}} } MAX 18 3.5 3.5 °C/W

Thermal R esistance Junction-lead MAX 15 °C/W
Thermal R esistance Junction -ambient MAX 70(*) 65(*) 54(*) 100 °C/W

SOT-223 SO-8 DPAK IPAK

2

of Cu (at leas t 35 µm thick) connected to all DRAIN pins.

ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified)
OFF

Symbol Parameter Test Conditions Min Typ Max Unit

V

CLAMP

V

CLTH

V

INTH

I

ISS

V

INCL

I

DSS

Drain-source Clamp
Voltage
Drain-source Clamp

Threshold Voltage
Input Thre shold Voltage VDS=VIN; ID=1mA 0. 5 2.5 V
Supply Current from Input

Pin
Input-Source Clamp
Voltage

Zero Input Voltage Drain
Current (VIN=0V)

V

=0V; ID=1.5A 40 45 55 V

IN

VIN=0V; ID=2mA 36 V

VDS=0V; VIN=5V 100 150 µA
IIN=1mA

I

=-1mA

IN

=13V; VIN=0V; Tj=25°C

V

DS

V

=25V; VIN=0V

DS

Value

-1.0

6

6.8 8

-0.3
30
75

Unit

V

µA

ON

Symbol Parameter Test Conditions Min Typ Max Unit

R

DS(on)

Static Drain-source On
Resistance

=5V; ID=1.5A; Tj=25°C

V

IN

V

=5V; ID=1.5A

IN

120
240

mΩ

3/21

1

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified)

DYNAMIC

Symbol Parameter Test Conditions Min Typ Max Unit

gfs (*)
C

OSS

SWITCHING

Symbol Parame ter Test Conditions Min Typ M ax Unit

t

d(on)

t

t

d(off)

t

t

d(on)

t

t

d(off)

t

(dI/dt)

Q

Forward
Transconductanc e

VDD=13V; ID=1.5A 5.0 S

Output Capacitance VDS=13V; f=1MHz; VIN=0V 150 pF

Turn-on Delay Time
Rise Time 250 750 ns

r

Turn-off Delay Time 450 1350 ns
Fall Time 250 750 ns

f

Turn-on Delay Time
Rise Time 2.5 7.5 µs

r

Turn-off Delay Time 3.3 10.0 µs
Fall Time 2.0 6.0 µs

f

Turn-on Current Slope

on

Total Input Charge

i

=15V; ID=1.5A

V

DD

V

=5V; R

gen

gen=RIN MIN

(see figure 1)

=15V; ID=1.5A

V

DD

V

gen

=5V; R

=2.2 KΩ

gen

(see figure 1)

=15V; ID=1.5A

V

DD

V

=5V; R
V
I

gen
DD

gen

gen=RIN MIN

=12V; ID=1.5A; VIN=5V

=2.13m A (see figure 5)

=220Ω

=220Ω

90 300 ns

0.45 1.35 µs

4.7 A/µs

8.5 nC

SOURCE DRAIN DIODE

Symbol Param eter Test Conditions Min Typ Max Unit

(*) Forward On Vol tage ISD=1.5A; VIN=0V 0.8 V

V

SD

Q

I

RRM

t

Reverse Recovery Time ISD=1.5A; dI/dt=12A/µs

rr

Reverse Recovery Charge 37 µC

rr

Reverse Recovery Current 0.7 A

V

=30V; L= 20 0 µ H

DD

(see test circuit, figure 2)

107 ns

PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified)

Symbol Param eter Test Conditions Min Typ Max Unit

I

lim

t

dlim

T

T

I

E

(*) Pulsed: Pu ls e duration = 300µs, duty c y c le 1.5%

Drain Current Limit VIN=5V; VDS=13V 3.5 5 7 A

=5V; VDS=13V

Step Response Current
Limit

Overtemperature

jsh

Shutdown

Overtemperature Reset 135 °C

jrs

Fault Sink Current VIN=5V; VDS=13V; Tj=T

gf

Sing l e Pu lse

as

Avala nche Energy

V

IN

starti ng T
V

IN

=25°C; VDD=24V

j

=5V R

gen=RIN MIN

(see figures 3 & 4)

jsh

=220Ω; L=24mH

10 µs

150 175 200 °C

10 15 20 mA

100 mJ

4/21

2

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

PROTECTION FEATURES

During normal operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path.

The device then behaves like a standard power
MOSFET and can be used as a switch from DC up

to 50KHz. The only difference from the user’s
standpoint is that a small DC current I
100µA) flows into the INPUT pin in order to supply

ISS

(typ.

the internal circuitry.
The de vice integrates:

- OVERVOLTAGE CLAMP PROTECTION:
internally set at 45V, along with the rugged

avalanche characteristics o f the Power MOSFET
stage giv e this device unrivall ed ruggedne ss and
energy handl ing capability. This feat ure is mainly
important when driving inductive loads.

- LINEAR CURRENT LIMITER CIRCUIT:
limits the drain current ID to I

INPUT pin voltages. When the current limiter is

whatever the

lim

active, the device operates in the linear region, so
power dissipation may exceed the capability of the
heatsink. Both case and junction temperatures
increase, and if this phase lasts long enough,
junction temperature may reach the
overtemperature threshold T

jsh

.

- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION:

these are based on sensing the chip t emperatur e
and are not dependen t on the input voltage. The
location o f t he s ensing el emen t on the c h ip i n t he
power stage area ensures fast, accurate detection
of the junction temperature. Overtemperature
cutout occurs in the range 150 to 190 °C, a typical
value being 170 °C. The device is auto matically
restarted when the chip temp eratu re fall s of about
15°C below shut-down temperature.

- STATUS FEEDBACK:
in the case of an overtem perature fault cond ition

(Tj > T
current Igf through the INPUT pin in order to

), the device tries to sink a diagnostic

jsh

indicate fault condition. If driven from a low
impedance source, this current may be used in
order to warn the control circuit of a device
shutdown. If the drive imped ance is high enough
so that the INPUT p in dri ver is no t abl e to su pply
the current Igf, the INPUT pin will fall to 0V. This

will not however affect the device operation:
no requirement is put on the current capability
of the INPUT pin driver except to be able to
supply the normal operation drive current I

ISS

Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit.

.

5/21

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

Fig.1: Switching Time Test Circuit for Resistive Load

V

gen

I

D

90%

V

D

R

gen

t

r

t

V

gen

d(on) t

Fig.2: Test Circuit for Diode Recovery Times

A

D

I

OMNIFET

S

220Ω

B

10%

R

gen

FAST
DIODE

d(off)

I

t

f

A

B

OMNIFET

L=100uH

D

t

t

V

DD

6/21

1

V

gen

S

8.5 Ω

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

Thermal Impedance for DPAK/IPAK Thermal Impedance for SOT-223

7/21

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

Fig. 3: Unclamped Inductive Load Test Circuits

R

V

IN

P

GEN

W

Fig. 5: Input Ch arge Test Circuit

IN

V

GEN

Fig. 4: Unclamped Inductive Waveforms

8/21

ND8003

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

Source-Drain Diode Forward Characteristics

Vsd (mV)

1100

1050

1000

950

900

850

800

750

700
650
600

Vin=0V

0123456789101112

Id (A)

Derating Curve

Voltage

Rds(on) (mohms)

250

225

200

175

150

125

100

75

50

25

0

3 3.5 4 4.5 5 5.5 6 6.5

Vin(V)

Id=1.5A

Tj=150ºC

Tj=25ºC

Tj=-40ºC

Static Drain Source On Resistance

Rds(on) (mo h ms )

1000

900

800

700

600

500

400

300

200

100

0

0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55

Tj=-40ºC

Vin=2.5V

Tj=25ºC

Tj=150ºC

Id(A)

Static Drain-Source On resistance Vs. Input
Voltage

Rds(on) (mohms)

300
275
250
225

Tj=150ºC

200
175
150

Tj=25ºC

125
100

Tj=-40ºC

75
50
25

0

3 3.5 4 4.5 5 5.5 6 6.5

Id=3.5A
Id=1A

Id=3.5A
Id=1A

Id=3.5A
Id=1A

Vin(V)

TransconductanceStatic Drain-Source On resistance Vs. Input

Gfs (S)

11
10

Vds=13V

9
8
7
6
5
4
3
2

1

0

00.511.522.533.544.555.5

Id (A)

Tj=-40ºC
Tj=25ºC

Tj=150ºC

9/21

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

Static Drain-Source On Resistance Vs. Id

Rds(on) (mo h ms )

250

225

200

175

150

125

100

75

50

25

0

Vin=5V

Tj=150ºC

Tj=25ºC

Tj= - 40ºC

00.511.522.533.54

Id (A)

Turn On Current Slope

di/dt(A/us)

5

4.5
4

3.5
3

2.5
2

1.5
1

0.5
0

0

500

250

750

1000

1250

Rg(ohm)

1500

Vdd=15V

1750

Vin=5V

Id=1.5A

2000

2250

2500

Transfer Characteristics

Idon (A)

6

5.5

4.5

3.5

2.5

1.5

0.5

Vds=13.5V

5

4

3

2

1

0

1.522.533.544.555.56

Tj=150ºC

Tj=-40ºC

Tj=25ºC

Vin (V)

Turn On Current Slope

di/dt(A/usec)

1.75

1.5

1.25

1

0.75

0.5

0.25

0

0 250 500 750 1000 1250 1500 1750 2000 2250 2500

Rg(ohm)

Vin=3.5V
Vdd=15V

Id=1.5A

Input Voltage Vs. Input Charge

Vin (V)

9

8

Vds=1V
Id=1.5A

7

6

5

4

3

2

1

0

01234567891011

Qg (nC)

10/21

Turn off drain source voltage slope

dv/dt(V/usec)

300
275
250
225
200
175
150
125
100

75
50
25

0

0

500

250

750

1000

1250

Rg(ohm)

1500

1750

Vin=5V

Vdd=15V

Id=1.5A

2000

2250

2500

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

Turn Off Drain-Source Voltage Slope

dv/dt(V/usec)

300
275
250
225
200
175
150
125
100

75
50
25

0

0

500

250

750

1000

1250

1500

Vin=3.5V
Vdd=15V

Id=1.5A

1750

Rg(ohm)

Switching Time Resistive Load

t(usec)

4

3.5

2.5

1.5

0.5

Vdd=15V

3

Id=1.5A

Vin=5V

2

1

0

0

500

250

750

1000

1250

1500

1750

td(off)

2000

Rg(ohm)

Output Characteristics

2000

tr

tf

td(on)

2250

2250

2500

2500

Capacitance Variations

C(pF)

350

300

250

200

150

100

50

0 5 10 15 20 25 30 35

f=1MHz
Vin=0V

Vds(V)

Switching Time Resistive Load

t(nsec)

900

800

700

600

500

400

300

200

100

0

3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25

td(off)

tf

td(on)

tr

Vdd=15V

Id=1.5A

Rg=220ohm

Vin(V)

Normalized On Resistance Vs. Temperature

Id (A)

5

4.5

4

3.5

3

2.5

2

1.5

1

0.5
0

012345678910

Vin=5V

Vin=4V

Vin=3V

Vds (V)

Rds(on) (mOhm)

4

3.5

3

2.5

2

1.5

1

0.5

Vin=5V

Id=1.5A

-50 -25 0 25 50 75 100 125 150 175

Tc )ºC)

11/21

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

Normalized Input Threshold Voltage Vs.
Temperature

Vinth (V)

2

1.8

1.6

1.4

1.2

1

0.8

0.6

0.4

0.2
0

Vds=Vin

Id=1mA

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

Step Response Current Limit

Tdlim(usec)

13

12.5
12

11.5

11

10.5
10

9.5
9

8.5
8

7.5

5 7.5 1012.51517.52022.52527.53032.5

Vdd(V)

Vin=5V

Rg=220ohm

Normalized Current Limit Vs. Junction
Temperature

Ilim (A)

10

9

8

7

6

5

4

3

2

1
0

Vin=5V

Vds=13V

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

12/21

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

TO-251 (IPAK) MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

H

A

E

= =

C2

L2

B2

= =

C

A3

A1

B6

L

B

B5

G

= =

D

B3

2

1 3

L1

13/21

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

TO-252 (DPAK) MECHANICAL DATA

DIM.

A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23

B 0.64 0.90
B2 5.20 5.40

C 0.45 0.60
C2 0.48 0.60

D 6.00 6.20
D1 5.1

E 6.40 6.60
E1 4.7

e2.28
G 4.40 4.60
H 9.35 10.10

L2 0.8
L4 0.60 1.00

R0.2

V2 0° 8°

Package W eight Gr. 0.29

MIN. TYP MAX.

mm.

14/21

P032P

1

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

SOT-223 MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 1.8 0.071
B 0.6 0.7 0.85 0.024 0.027 0.033

B1 2.9 3 3.15 0.114 0.118 0.124

c 0.24 0.26 0.35 0.009 0.01 0.014

D 6.3 6.5 6.7 0.248 0.256 0.264

e2.3 0.09

e1 4.6 0.181

E 3.3 3.5 3.7 0.13 0.138 0.146

H 6.7 7 7.3 0.264 0.276 0.287

V10 (max)

A1 0.02 0.1 0.0008 0.004

mm. inch

0046067

15/21

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

SO-8 MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 1.75 0.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033

b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.019

c1 45 (typ.)

D 4.8 5.0 0.188 0.196

E 5.8 6.2 0.228 0.244

e 1.27 0.050
e3 3.81 0.150

F 3.8 4.0 0.14 0.157

L 0.4 1.27 0.015 0.050

M 0.6 0.023

F 8 (max.)

mm. inch

16/21

SOT-223 TAPE AND REEL SHIPMENT (suffix “13TR”)

TAPE DIMENSIONS

According to Electr onic Industries Association
(EIA) Sta ndard 481 rev. A, Feb. 1986

Tape width W 12
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 5.5
Compartment Depth K (max) 4.5
Hole Spacing P1 (± 0.1) 2

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

REEL DIMENS I O N S

Base Q.ty 1000
Bulk Q.ty 1000
A (max) 330
B (min) 1.5
C (± 0.2) 13

F 20.2
G (+ 2 / -0) 12.4
N (min) 60
T (max) 18.4

All dimensions are i n mm.

Top

cover

tape

End

500mm min

Empty components pockets
saled with cover tape.

User direction of feed

Start

No componentsNo components Components

500mm min

17/21

1

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

SO-8 TUBE SHIPMENT (no suffix)

B

C

Base Q.ty 100
Bulk Q.ty 2000
Tube length (± 0.5) 532

A

A 3.2
B 6
C (± 0.1) 0.6

All dimensions are i n mm.

TAPE AND REEL SHIPMENT (suffix “13TR”)

REEL DIMENSIONS

Base Q.ty 2500
Bulk Q.ty 2500
A (max) 330
B (min) 1.5
C (± 0.2) 13

F 20.2
G (+ 2 / -0) 12.4
N (min) 60
T (max) 18.4

All dimensions are in mm.

TAPE DIMENSIONS

According to Electr onic Industries Association
(EIA) S tanda rd 481 rev. A, Feb 1986

Tape width W 12
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 5.5
Compartment Depth K (max) 4.5
Hole Spacing P1 (± 0.1) 2

All dimensions are i n mm.

18/21

Top

cover

tape

End

500mm min

Empty components pockets
saled with cover tape.

User direction of feed

Start

No componentsNo components Components

500mm min

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

DPAK FOOTPRINT TUBE SHIPMENT (no suffix)

6.7

6.7 3.01.8 1.6

2.3

2.3

TAPE AND REEL SHIPMENT (suffix “13TR”)

A

Base Q.ty 75

C

Bulk Q.ty 3000
Tube length (± 0. 5) 532

A 6

B

B 21.3
C (± 0.1) 0.6

All dimensions are in mm.

REEL DIMENSIONS

Base Q.ty 2500
Bulk Q.ty 2500
A (max) 330
B (min) 1.5
C (± 0.2) 13

F 20.2
G (+ 2 / -0) 16.4
N (min) 60
T (max) 22.4

TAPE DIMENSIONS

According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986

Tape width W 16
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 7.5
Compartm ent Depth K (max) 6.5
Hole Spacing P1 (± 0.1) 2

All dimensions are in mm.

Top

cover

tape

End

500mm min

Empty components pockets
saled with cover tape.

User direction of feed

Start

No componentsNo components Components

500mm min

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VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

IPAK TUBE SHIP MENT (no suffix)

A

C

Base Q.ty 75
Bulk Q.ty 3000
Tube length (± 0.5) 532

B

A 6
B 21.3
C (± 0.1) 0.6

All dimensions are in mm.

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1

VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1

Information furnish ed is believed to be accurate and r eliable. However, STMicroel ec tronics ass um es no responsibility for t he consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under a ny patent or patent rights of STMicroelect r onics. Specif ic ations mentioned in this publication are
subject to c hange without notice. T his publication supersedes and rep lac es all inform ation previously supplied. STMicroelect r onics produc ts
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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 2003 STMicroelectronics - Printed in ITALY- All Rights Reserved.

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