Datasheet UPC2712TB-E3, UPC2712TB, UPC2712T-E3, UPC2712T Datasheet (NEC)

DATA SHEET

BIPOLAR ANALOG INTEGRATED CI RCUIT

2.6 GHz WIDE BAND AMPLIFIER

SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

FEATURES

• High power gain : 20 dB

• Excellent frequency response: 2.6 GHz

• Noise figure : 4.5 dB @ f = 1 GHz

• Single supply voltage : 5 V

• Input and output matching : 50

• Mini package : 6-pin mini mold

TYP.

Ω

@ f = 1 GHz

TYP.

@ 3 dB down below the gain at 0.1 GHz

PC2712T

µµµµ

ORDERING INFORMATION

PART NUMBER PACKAGE SUPPLYING FORM

µ

PC2712T-E3 6-pin mini mold Embossed tape 8 mm wide. QTY 3 KP/Reel.

Pin 1, 2, 3 face to perforat i on side of the tape.

EQUIVALENT CIRCUIT PIN CONNECTIONS

VCC

OUT

IN

GND

3

2

1

(Top View)

C 1 H

4

5

6

1. INPUT

2. GND

3. GND

4. OUTPUT

5. GND

CC

6. V

(Bottom View)

4

5

6

3

2

1

Document No. P12429EJ2V1DS00 (2nd edition) (Previous No. IC-2949) Date Published March 1997 N CP(K) Printed in Japan

Caution: Electro-static sensitive devices

1993©

ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, TA = +25 °C)

µµµµ

PC2712T

CC

stg

6V

30 mA

D A

in

280

*

40 to +85 °C

−

55 to +150 °C

−

+10 dBm

mW

Supply Voltage V Total Circuit Current I Power Dissipation P Operating Ambient Temperature T Storage Temperature T Input Power P

Mounted on 50 × 50 × 1.6 mm double sided copper clad epoxy glass PWB (TA = +85 °C)

*

RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

O(sat)

∆

CC

P

u

in

out

P

G

4.5 5.0 5.5 V

)

ΩΩΩΩ

9 12 15 mA No Signals

18 20 23.5 dB f = 1 GHz

0 +3 — dBm f = 1 GHz, Pin = −2 dBm

2.2 2.6 — GHz 3 dB down below fl at gai n at f = 0.1 GHz

9 12 — dB f = 1 GHz 10 13 — dB f = 1 GHz — ±0. 8 — dB f = 0.1 to 2. 0 GHz

Supply Voltage V

ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = 5.0 V, ZS = ZL = 50

PARAMETERS SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Circuit Current I Power Gain G Maximum Output Level P Noise Figure NF — 4.5 6 dB f = 1 GHz Upper Limit Operating Frequency f

Isolation ISL 28 33 — dB f = 1 GHz Input Return Loss RL Output Return Loss RL Gain Flatness

2

TEST CIRCUIT

1

50 Ω

C

IN

1 000 pF

EXAMPLE OF APPLICATION CIRCUIT

V

CC

1 000 pF

C

1

µµµµ

PC2712T

V

CC

3

6

C

2

4

50 Ω

OUT

1 000 pF

2, 3, 5

IN

50 Ω

1

C

1 000 pF

C

1

3

6

C

4

1 000 pF

C

1 000 pF

R

1

5

1

6

1 000 pF

C

6

4

C

2

1 000 pF

50 Ω

OUT

50 to 200 Ω

2, 3, 5

To stabilize operation,

1

, C

please connect R

5

The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.

Capacitors for VCC, input and output pins

1 000 pF capacitors are recommendable as bypass capacitor for V

CC

pin and coupling capacitors for input/output

pins.

Bypass capacitor for VCC pin is intended to minimize VCC pin’s ground impedance. Therefore, stable bias can be

supplied against VCC fluctuation.

Coupling capacitors for input/output pins are intended to minimize RF serial impedance and cut DC.

To get flat gain from 100 MHz up, 1 000 pF capacitors are assembled on the test circuit. [Actually, 1 000 pF capacitors give flat gain at least 10 MHz. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 2 200 pF. Because the coupling capacitors are determined by the equation of C = 1/(2 π fZs).]

3

TYPICAL CHARACTERISTICS (TA = +25 °C)

µµµµ

PC2712T

20 18 16 14 12 10

8 6

– Circuit Current – mA

CC

I

4 2

0 123456

30

10

8

6

25

20

15

CIRCUIT CURRENT vs. SUPPLY VOLTAGE

V

CC

– Supply Voltage – V

NOISE FIGURE AND INSERTION POWER GAIN vs. FREQUENCY

VCC = 5.0 V

G

P

NF

VCC = 4.5 V

VCC = 5.5 V

CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE

20 18

V

CC

= 5.0 V

16 14 12 10

8 6

– Circuit Current – mA

CC

I

4 2

0

–60 +20 +100

–20 +60

T

A

– Operating Ambient Temperature – °C

INSERTION POWER GAIN vs. FREQUENCY

25

VCC = 5.0 V

TA = –40 °C TA = +25 °C

20

TA = + 85 °C

– Insertion Power Gain – dB

10

P

4

G

NF – Noise Figure – dB

2

VCC = 5.5 V

5

0.1 0.3 1.0 3.0

0

–10

–20

–30

ISL – Isolation – dB

–40

–50

0.1

VCC = 5.0 V

f – Frequency – GHz

ISOLATION vs. FREQUENCY

V

CC

0.3 1.0 3.0 f – Frequency – GHz

= 5.0 V

– Insertion Power Gain – dB

P

G

15

0.1 0.3 1.0 3.0 f – Frequency – GHz

INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY

0

RL

in

–10

–20

– Output Return Loss – dB

–30

– Input Return Loss – dB

in

out

RL

–40

0.1

0.3 1.0 3.0 f – Frequency – GHz

VCC = 5.0 V

RL

out

4

µµµµ

PC2712T

+10

OUTPUT POWER vs. INPUT POWER

f = 1.0 GHz

+5

0

–5

–10

–15

– Output Power – dBm

O

P

–20 –25

–45

–40 –35 –30 –25 –20 –5 0 +5

P

in

– Input Power – dBm

OUTPUT POWER vs. INPUT POWER

+10

f = 2.0 GHz

+5

VCC = 5.5 V

0

–5

–10

VCC = 4.5 V

CC

V

= 5.5 V

VCC = 4.5 V

VCC = 5.0 V

–10–15

VCC = 5.0 V

+10

+5

CC

= 5.0 V

V f = 1.0 GHz

0

–5

–10

OUTPUT POWER vs. INPUT POWER

–15

– Output Power – dBm

O

P

–20 –25

–30

–35 –25 –10 –5 0

P

in

– Input Power – dBm

OUTPUT POWER vs. INPUT POWER

+10

CC

= 5.0 V

V

+5

f = 0.5 GHz

0

–5

–10

TA = +85 °C

TA = +25 °C

TA = –40 °C

–20–40 –15 +5

f = 1.0 GHz

f = 2.0 GHz

–15

– Output Power – dBm

O

P

–20 –25

–30

–20–40 –15 +5–35 –25 –10 –5 0

Pin – Input Power – dBm

SATURATED OUTPUT POWER vs. FREQUENCY

+10

+5

VCC = 4.5 V

0

–5

– Saturated Output Power – dBm

O(sat)

P

–10

0.1

0.3 1 3 f – Frequency – GHz

P

in

VCC = 5.5 V

VCC = 5.0 V

= –2 dBm

–15

– Output Power – dBm

O

P

–20 –25

–45

–40 –35 –30 –25 –20 –5 0 +5

–10–15

Pin – Input Power – dBm

THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE

–50

1

= 1 .000 GHz

f f

2

= 1 .002 GHz

–40

VCC = 5.0 V

–30

VCC = 5.5 V

–20

VCC = 4.5 V

–10

– 3rd Order Intermodulation Distortion – dBc

3

0

IM

–16 –14 –12 –10 –8 –6 –4 –2 0

P

O(each)

– Output Power of Each Tone – dBm

5

S-PARAMETER (VCC = 5.0 V)

S11-FREQUENCY

R

O

T

A

R

0.04

E

N

E

G

D

R

0.03

A

0.47

W

O

T

G

S

E

H

D

T

0.02

G

0.48

N

I

N

T

E

N

L

E

I

V

C

A

F

0.01

0.49

W

F

E

O

C

N

0

O

I

T

C

E

L

F

E

R

0.01

0.49

F

O

E

L

G

N

0.02

A

0.48

0.03

0.47

0.46

µµµµ

PC2712T

0.13

0.12

0.11

0.39

100

0.8

0.7

0.5

0.6

0.7

REACTANCE COMPONENT

R

––––

(

)

Z

O

3.0 G

0.7

0.8

–110

–100

0.10

0.11

0.40

0.39

0.38

0.9

0.8

0.9

0.10

0.40

0.09

0.41

N

Z

IVE

0.42

T

0.5

110

120

0.6

0.5

T

N

E

0.3

0.4

A

G

NE

0.6

–120

0.08

0.42

0.09

0.41

0.08

0.07

0.43 130

0.06

0.44

0.2

–150

0.05

O

140

P

0.4

M

CO

E

C

N

A

T

)

0.3

C

A

O

E

+JX

R

––––

(

E

V

Z

I

T

I

OS

P

0.1

0.2

T

N

E

N

O

P

)

OM

O

C

E

0.3

C

(

– JX

N

––––

A

T

C

A

E

R

0.4

–140

0.06

0.44

–130

000.07

0.43

0.05

0.45

0.46

150

S

E

R

0.1

0

0.1

0.2

–160

0.04

0.45

0.14

0.4

1.2

0.6

0.8

0.6

0.4

0.13

0.37

0.36

80

0.2

0.8

1.0

0.8

0.1 G

1.4

1.6

2.0 G

1.0

0.8

1.2

–80

0.15

0.35

1.4

1.8

1.0 G

1.4

0.04

0.36

0.16

0.34

0.17

70

0.33

0.18

0060

1.6

2.0

–70

0.15

0.35

0.32

1.8

3.0

1.8

–60

1.6

0.16

0.34

0.19

50

0.31

2.0

4.0

2.0

0.17

0.33

0.20

40

0.30

0.21

3.0

0.29

30

0.22

4.0

0.28

20

6.0

0.23

0.27

10

0.24

0.26

20

50

0.25

0

20

10

5.0

50

0.24

0.26

20

–10

10

0.23

0.27

–20

0.22

6.0

0.28

4.0

000.21

–30

0.29

3.0

0.20

–40

0.30

0.19

0.31

–50

0.18

0.32

0.37

90

1.0

0.2

0.4

0.2

0.9

1.0

0.2

0.4

0.2

1.0

–90

0.12

0.38

S22-FREQUENCY

0.13

0.12

0.11

0.10

0.40

0.09

0.41

0.08

0.07

0.43 130

0.06

0.44

0.2

–150

0.05

O

140

P

0.4

M

CO

E

C

N

A

T

)

0.3

C

A

O

E

+JX

R

––––

(

E

V

Z

I

T

I

OS

P

0.1

0.2

T

N

E N

O

P

)

OM

O

C

E

0.3

C

(

– JX

N

––––

A

T

C

A

E

R

0.4

–140

0.06

0.44

–130

000.07

0.43

0.05

0.45

R

O

T

A

R

0.04

E

0.46

150

N

E

G

D

R

0.03

A

S

0.47

E

W

E

O

R

T

G

S

E

H

D

T

0.02

G

0.48

N

I

N

T

E

N

L

0.1

E

I

V

C

A

F

0.01

0.49

W

F

E

O

C

0

N

0

O

I

T

C

E

L

F

E

R

0.01

0.1

0.49

F

O

E

L

G

N

0.02

A

0.48

0.2

–160

0.03

0.47

0.04

0.46

0.45

110

0.42

120

0.6

0.5

T

N

E

N

0.3

0.4

Z

IVE

T

A

G

NE

0.5

0.6

0.7

–120

0.08

0.42

0.09

0.41

0.38

0.39

100

0.9

0.8

0.7

0.1 G

0.5

0.6

0.7

0.8

REACTANCE COMPONENT

R

––––

(

)

Z

O

0.8

0.9

–110

–100

0.10

0.11

0.40

0.39

90

1.0

0.9

3.0 G

2.5 G

1.0

0.12

0.38

0.14

0.37

0.2

0.4

0.2

1.0

0.2

0.4

0.2

–90

0.15

0.36

80

0.2

0.6

0.8

1.0

0.8

0.6

0.4

1.2

1.4

0.6

0.8

1.0

0.8

0.6

0.4

1.2

0.13

0.37

0.35

1.4

1.0

1.6

1.8

1.0 G

1.0

–80

0.04

0.36

0.16

0.34

0.17

70

0.33

0.18

0060

1.6

2.0

1.4

–70

0.15

0.35

0.32

1.8

3.0

1.8

–60

1.6

0.16

0.34

0.19

50

0.31

2.0

4.0

2.0

0.17

0.33

0.20

40

0.30

0.21

3.0

0.29

30

0.22

4.0

0.28

20

6.0

0.23

0.27

10

0.24

0.26

20

50

0.25

0

20

10

5.0

50

0.24

0.26

20

–10

10

0.23

0.27

–20

0.22

6.0

0.28

4.0

000.21

–30

0.29

3.0

0.20

–40

0.30

0.19

0.31

–50

0.18

0.32

6

ILLUSTRATION OF APPLICATION CIRCUIT ASSEMBLED ON EVALUATION BOARD

Top View

µµµµ

PC2712T

123

C1H

654

Mounting direction

IN

C C

COMPONENT LIST FOR APPLICATION EXAMPLE

VALUE

Note for evaluation board

1. 30 × 30 × 0.4 mm double copper clad polyimide board

C 1 000 pF

2. Back side: GND pattern

3. Solder plated on pattern

4. : Through holes

OUT

V

CC

C

7

6 PIN MINI MOLD PACKAGE DIMENSIONS (Unit: mm)

+0.1

0.3

–0.05

123

–0.3

–0.1

+0.2

1.5

2.8

65

4

0.13±0.1

0 to 0.1

µµµµ

PC2712T

0.950.95

1.9

2.9±0.2

1.1

0.8

+0.2

–0.1

8

µµµµ

PC2712T

NOTE ON CORRECT USE

(1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to prevent an increase in ground impedance (to prevent undesired

oscillation). (3) Keep the track length of the ground pins as short as possible. (4) Connect a bypass capacitor (e.g. 1000 pF) to the VCC pin.

RECOMMENDED SOLDERING CONDITIONS

This product should be soldered in the following recommended conditions. Other soldering methods and

conditions than the recommended conditions are to be consulted with our sales representatives.

PC2712T

µ

Soldering method Soldering conditions

Infrared ray reflow Package peak temperature: 235 ° C,

Hour: within 30 s. (more than 210 °C), Time: 3 time, Limited days; no.

VPS Package peak temperature: 215 ° C,

Hour: within 40 s. (more than 200 °C), Time: 3 time, Limited days: no.

Wave soldering Soldering tub temperature: les s than 260 °C,

Hour: within 10 s. Time: 1 time, Limited days: no.

Pin part heating Pin area temperature: less than 300 °C,

Hour: within 3 s. Limited days: no.

It is the storage days after opening a dry pack, the storage conditions are 25 °C, less than 65 % RH.

*1

Recommended condition symbols

IR35-00-3

VP15-00-3

WS60-00-1

Caution The combined use of soldering method is to be avoided (However, except the pin area heating

method).

For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).

9

[MEMO]

µµµµ

PC2712T

10

[MEMO]

µµµµ

PC2712T

11

µµµµ

PC2712T

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc.

The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.

M4 96. 5