Datasheet UAA2082U, UAA2082H Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

UAA2082

Advanced pager receiver

Product specification
Supersedes data of 1995 Nov 27
File under Integrated Circuits, IC03

1996 Jan 15

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

FEATURES

• Wide frequency range: VHF, UHF and 900 MHz bands

• High sensitivity

• High dynamic range

• Electronically adjustable filters on chip

• Suitable for data rates up to 2400 bits/s

• Wide frequency offset and deviation range

• Fully POCSAG compatible FSK receiver

• Power on/off mode selectable by the chip enable input

• Low supply voltage; low power consumption

• 1-cell battery-low detection circuit

• High integration level

• Interfaces directly to the PCA5000A, PCF5001 and

PCD5003 POCSAG decoders.

APPLICATIONS

• Wide area paging

• On-site paging

• Telemetry

• RF security systems

• Low bit-rate wireless data links.

GENERAL DESCRIPTION

The UAA2082 is a high-performance low-power radio
receiver circuit primarily intended for VHF, UHF and
900 MHz pager receivers for wide area digital paging
systems, employing direct FM non-return-to-zero (NRZ)
frequency shift keying (FSK).

The receiver design is based on the direct conversion
principle where the input signal is mixed directly down to
the baseband by a local oscillator on the signal frequency.
Two complete signal paths with signals of 90° phase
difference are required to demodulate the signal.
All channel selectivity is provided by the built-in IF filters.
The circuit makes extensive use of on-chip capacitors to
minimize the number of external components.

The battery monitoring circuit has an external sense input
and a 1.1 V detection threshold for easy operation in a
single-cell supply concept.

The UAA2082 was designed to operate together with the
PCA5000A, PCF5001 or PCD5003 POCSAG decoders,
which contain a digital input filter for optimum call success
rate.

ORDERING INFORMATION

TYPE

NUMBER

UAA2082H LQFP32 plastic low profile quad flat package; 32 leads; body 7 × 7 × 1.4 mm SOT358-1
UAA2082U 28 pads naked die; see Fig.8

NAME DESCRIPTION VERSION

PACKAGE

1996 Jan 15 2

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

P

I

P

I

P(off)

P

i(ref)

P

i(mix)

V

th

T

amb

supply voltage 1.9 2.05 3.5 V
supply current 2.3 2.7 3.2 mA
stand-by current −−3µA
RF input sensitivity BER ≤3⁄

data rate 1200 bits/s; T

f

i(RF)

f

i(RF)

f

i(RF)

mixer input sensitivity BER ≤3⁄

; ±4 kHz deviation;

100

=25°C

amb

= 173 MHz −−126.5 −123.5 dBm
= 470 MHz −−124.5 −121.5 dBm
= 930 MHz −−120.0 −114.0 dBm

; f

100

= 470 MHz;

i(RF)

−−115.0 −110.0 dBm

±4 kHz deviation;

detection threshold for battery
LOW indicator

data rate 1200 bits/s; T
T

=25°C 1.05 1.10 1.15 V

amb

= −10 to +70 °C 1.03 1.10 1.17 V

T

amb

amb

=25°C

operating ambient temperature −10 − +70 °C

1996 Jan 15 3

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

BLOCK DIAGRAMS (173 MHz)

L5

150

R2

47

P

V

kΩ

nH

bias(osc)

V

C20

1 nF

R3

C19

1.5 kΩ

C13

1 nF

10 µF

L6

33 nH

21

22

C12

5 to 20 pF

L7

33 nH

25

24

20

GND2

19

MIXER Q

C9

MLC222

8.2 pF

L4

nH

18

150

UAA2082H

C11

22 pF

= 172.941 MHz.

15 16

C14

1 nF

R4

2.2 kΩ

2627

low noise

LOW

BATTERY

INDICATOR

amplifier Q

ACTIVE

GYRATOR

Q

LIMITER

FILTER

FILTER

2

BLI

DEMO-

DULATOR

3

DO

ACTIVE

GYRATOR

4

RE

R7

100 Ω

C15

27 pF

L8

27

nH

R6

22

kΩ

XTAL

C16

R5

1.5

kΩ

C18

1 nF

13 to

L9

50 pF

560

SENSE

C17

nH

28

303132

GND3

15 pF

MULTIPLIER

FREQUENCY

CRYSTAL

OSCILLATOR

1TS

FILTER

FILTER

I

LIMITER

5

6

TPI

low noise

amplifier I

TPQ

MIXER I

BAND GAP

REFERENCE

RF pre-amplifier

7

C3

5 to

ref

V

P

V

13 14

12
11

10

8

20 pF

C10

L3

L2

GND1

330

22 pF

C5 1 nF

22 nH

22 nH

R1

Ω

C7

C6

8.2 pF

5 to

20 pF

C4 1 nF

C8

8.2 pF

P

V

i(RF)

handbook, full pagewidth

Fig.1 Block, test and application diagram drawn for LQFP32; f

1996 Jan 15 4

to

decoder

C1

8.2 pF

IF testpoints

i(RF)

V

L1

43

nH

C2

8.2 pF

Pins 9, 17, 23 and 29 are not connected.

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

bias(osc)

V

C20

1 nF

V

P

C15

L8

R6

R5

C18

R3

C13

R7

1.5 kΩ

1 nF

C 19

1.5 kΩ

10 µF

C14

27

27

22

C16

1 nF

L6

L7

1 nF

100 Ω

pF

nH

kΩ

L9

XTAL

13 to 

50 pF

560 nH

BLI

R2

33 nH

33 nH

C17

DO

47 kΩ

C12

R 4

2.2 kΩ

SENSE

15 pF

TS

RE

decoder

16 151718

5 to 20 pF

1920

21

222324

GND3

27 26 25

28

MULTIPLIER

FREQUENCY

CRYSTAL

BAND GAP

BATTERY

OSCILLATOR

ref

V

V

REFERENCE

Q

amplifier

low noise

UAA2082U

LOW

INDICATOR

P

FILTER

ACTIVE

FILTER

GYRATOR

Q

LIMITER

DEMODULATOR

FILTER

ACTIVE

FILTER

GYRATOR

I

LIMITER

I

amplifier

low noise

RF pre-amplifier

MIXER I MIXER Q

GND2

L5

150

nH

L4

150

nH

C9

10 11 12 13 14

89

7
6

54

12 3

10 pF 10 pF

L2

L3

R1

330

C3

TPI TPQ

C10 C11

C7

8.2 pF

C5 1 nF

22 nH

22 nH

GND1

Ω

5 to 20 pF

IF testpoints

MLC223

8.2 pF

C8

C6

5 to 20 pF

C4 1 nF

C2

8.2 pF

L1

43 nH

C1

8.2 pF

8.2 pF

P

V

i(RF)

V

= 172.941 MHz.

i(RF)

handbook, full pagewidth

Fig.2 Block, test and application diagram drawn for naked die; f

1996 Jan 15 5

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

Table 1 Tolerances of components shown in Figs 1 and 2 (notes 1 and 2)

COMPONENT

TOLERANCE

(%)

REMARK

Inductances

L1 ±5Q
L2, L3, L6, L7 ±20 Q
L4, L5 ±10 Q
L8 ±20 Q
L9 ±10 Q

= 100 at 173 MHz

min

= 50 at 173 MHz; TC = (+25 to +125) × 10−6/K

min

= 30 at 173 MHz; TC = (+25 to +125) × 10−6/K

min

= 30 at 173 MHz; TC = (+25 to +125) × 10−6/K

min

= 30 at 57 MHz; TC = (+25 to +125) × 10−6/K

min

Resistors

−6

R1 to R7 ±2 TC = +50 × 10

/K

Capacitors

C1, C2, C7, C8, C9, C15 ±5TC=(0±30) × 10−6/K; tan δ≤ 30 × 10−4at 1 MHz

−6

C3, C6, C12 − TC = (−750 ±300) × 10
C4, C5, C14, C18, C19, C20 ±10 TC = (0 ±30) × 10
C10, C11 ±5TC=(0±30) × 10

/K; tan δ≤50 × 10−4at 1 MHz

−6

/K; tan δ≤10 × 10−4at 1 MHz

−6

/K; tan δ≤21 × 10−4at 1 MHz

C13 ±20

−6

C16 − TC = (−1700 ±500) × 10
C17 ±5TC=(0±30) × 10

−6

/K; tan δ≤50 × 10−4at 1 MHz

/K; tan δ≤26 × 10−4at 1 MHz

Notes

1. Recommended crystal: f

= 57.647 MHz (crystal with 8 pF load), 3rd overtone, pullability >2.75 × 10−6/pF

XTAL

(change in frequency between series resonance and resonance with 8 pF series capacitor at 25 °C), dynamic
resistance R1 < 40 Ω, ∆f=±5×10−6 for T

= −10 to +55 °C with 25 °C reference, calibration plus aging tolerance:

amb

−5 × 10−6to +15 × 10−6.

2. This crystal recommendation is based on economic aspects and practical experience. Normally the spreads for R1,
pullability and calibration do not show their worst case limits simultaneously in one crystal. In such a rare event, the
tuning range will be reduced to an insufficient level.

1996 Jan 15 6

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

BLOCK AND TEST DIAGRAMS (470 MHz)

L5

40

R2

47

P

V

L6

820 Ω

1 nF

8 nH

C12

L7

8 nH

2.5 to 6 pF
25

24

R3

C19

kΩ

GND2

21

22

20

18

19

UAA2082H

MIXER Q

nH

C9

MLC224

2.7 pF

= 469.95 MHz.

L4

40

nH

C11

22 pF

bias(osc)

V

C20

1 nF

L8

R6

R5

C13

C14

100

22

1.5

C18

10 µF

1 nF

C15

1 nF

3 to

nH

kΩ

XTAL

C16

kΩ

10 pF

13 to

L9

50 pF

560

R4

1.2 kΩ

SENSE

C17

nH

GND3

15 pF

2627

28

303132

MULTIPLIER

FREQUENCY

LOW

BATTERY

CRYSTAL

OSCILLATOR

1TS

low noise

amplifier Q

ACTIVE

INDICATOR

GYRATOR

Q

LIMITER

FILTER

FILTER

2

BLI

DEMO-

DULATOR

3

4

DO

ACTIVE

GYRATOR

5

TPI

RE

low noise

amplifier I

FILTER

FILTER

I

LIMITER

6

TPQ

MIXER I

BAND GAP

REFERENCE

RF pre-amplifier

7

C3

2.5 to

ref

V

P

V

8

6 pF

15 16

C8

C7

C10

22 pF

C6

C5 1 nF

13 14

L3

8 nH

L2

GND1

330

8 nH

R1

Ω

12
11

10

2.7 pF

6 pF

2.5 to

C4 1 nF

2.7 pF

P

V

i(RF)

handbook, full pagewidth

Fig.3 Block, test and application diagram drawn for LQFP32; f

1996 Jan 15 7

to

decoder

C1

2.7 pF

IF testpoints

i(RF)

V

L1

nH

C2

12.5

2.7 pF

Pins 9, 17, 23 and 29 are not connected.

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

bias(osc)

V

C20

1 nF

V

P

R5

C18

R3

C13

L8

R6

1.5 kΩ

1 nF

C 19

820 Ω

10 µF

C14

C15

100

22

1 nF

1 nF

3 to

nH

kΩ

C16

L6

L7

10 pF

XTAL

13 to 

L9

R2

8 nH

8 nH

C17

50 pF

560 nH

DO

BLI

47 kΩ

C12

R 4

1.2 kΩ

SENSE

15 pF

TS

RE

decoder

16 151718

2.5 to 6 pF

1920

21

222324

GND3

27 26 25

28

MULTIPLIER

FREQUENCY

CRYSTAL

BAND GAP

BATTERY

OSCILLATOR

ref

V

V

REFERENCE

Q

amplifier

low noise

UAA2082U

LOW

INDICATOR

P

FILTER

ACTIVE

FILTER

GYRATOR

Q

LIMITER

DEMODULATOR

FILTER

ACTIVE

FILTER

GYRATOR

I

LIMITER

I

amplifier

low noise

RF pre-amplifier

MIXER I MIXER Q

GND2

L5

40

L4

40

nH

C9

10 11 12 13 14

89

7
6

54

12 3

22 pF 22 pF

L2

L3

R1

330

C3

TPI TPQ

C10 C11

C7

2.7 pF

C6

C5 1 nF

8 nH

8 nH

GND1

Ω

2.5 to 6 pF

IF testpoints

MLC225

nH

2.7 pF

C8

2.5 to 6 pF

C4 1 nF

C2

2.7 pF

L1

12.5 nH

C1

2.7 pF

2.7 pF

P

V

i(RF)

V

= 469.95 MHz.

i(RF)

handbook, full pagewidth

Fig.4 Block, test and application diagram drawn for naked die; f

1996 Jan 15 8

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

L5

40

R2

47

P

V

L6

820 Ω

1 nF

8 nH

C12

L7

8 nH

2.5 to 6 pF

24

25

R3

C19

kΩ

GND2

21

22

20

18

19

UAA2082H

MIXER Q

nH

L4

40

nH

C11

22 pF

MLC226

C23

2.5 to 6 pF

L10

12.5 nH

bias(osc)

V

C20

1 nF

L8

R6

R5

C13

C14

100

22

1.5

C18

10 µF

1 nF

C15

1 nF

3 to

nH

kΩ

XTAL

C16

kΩ

10 pF

13 to

50 pF

L9

560

R4

1.2 kΩ

SENSE

C17

nH

GND3

15 pF

2627

28

303132

MULTIPLIER

FREQUENCY

LOW

BATTERY

CRYSTAL

OSCILLATOR

1TS

low noise

amplifier Q

ACTIVE

INDICATOR

GYRATOR

Q

LIMITER

FILTER

FILTER

2

BLI

DEMO-

DULATOR

3

DO

ACTIVE

GYRATOR

5

4

TPI

RE

low noise

FILTER

FILTER

I

LIMITER

6

TPQ

amplifier I

RF pre-amplifier

7

MIXER I

V

BAND GAP

REFERENCE

V

8

ref

P

15 16

= 469.95 MHz.

5.6 pF

i(RF)

handbook, full pagewidth

P

C21

C5

C22

5.6 pF

1 nF

V

C10

22 pF

13 14

12
1110

GND1

i(RF)

V

Fig.5 Mixer input sensitivity test circuit; f

1996 Jan 15 9

to

IF testpoints

decoder

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

Table 2 Tolerances of components shown in Figs 3, 4 and 5 (notes 1 and 2)

COMPONENT

TOLERANCE

(%)

REMARK

Inductances

L1, L10 ±5Q
L2, L3, L6, L7 ±20 Q
L4, L5 ±10 Q
L8 ±10 Q
L9 ±10 Q

= 145 at 470 MHz

min

= 50 at 470 MHz; TC = (+25 to +125) × 10−6/K

min

= 40 at 470 MHz; TC = (+25 to +125) × 10−6/K

min

= 30 at 156 MHz; TC = (+25 to +125) × 10−6/K

min

= 40 at 78 MHz; TC = (+25 to +125) × 10−6/K

min

Resistors

−6

R1 to R6 ±2 TC = +50 × 10

/K

Capacitors

C1, C2, C7, C8, C9 ±5TC=(0±30) × 10−6/K; tan δ≤30 × 10−4 at 1 MHz

−6

C3, C6, C12, C23 − TC = (−750 ±300) × 10
C4, C5, C14, C18 to C22 ±10 TC = (0 ±30) × 10
C10, C11 ±5TC=(0±30) × 10

/K; tan δ≤50 × 10−4at 1 MHz

−6

/K; tan δ≤10 × 10−4 at 1 MHz

−6

/K; tan δ≤21 × 10−4 at 1 MHz

C13 ±20

−6

C16 − TC = (−1700 ±500) × 10
C17 ±5TC=(0±30) × 10

−6

/K; tan δ≤50 × 10−4at 1 MHz

/K; tan δ≤26 × 10−4at 1 MHz

Notes

1. Recommended crystal: f

= 78.325 MHz (crystal with 8 pF load), 3rd overtone, pullability >2.75 × 10−6/pF

XTAL

(change in frequency between series resonance and resonance with 8 pF capacitor at 25 °C), dynamic resistance
R1 < 30 Ω, ∆f=±5×10−6 for T

= −10 to +55 °C with 25 °C reference, calibration plus aging tolerance:

amb

−5 × 10−6to +15 × 10−6.

2. This crystal recommendation is based on economic aspects and practical experience. Normally the spreads for R1,
pullability and calibration do not show their worst case limits simultaneously in one crystal. In such a rare event, the
tuning range will be reduced to an insufficient level.

1996 Jan 15 10

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

BLOCK AND TEST DIAGRAM (930 MHz)

L5

12.5

R2

47

P

V

L6

R3

330 Ω

3 nH

C12

3 nH

1.7 to 3 pF
25

L7

24

22

kΩ

GND2

21

20

18

19

nH

L4

nH

12.5

MLC227

C13

C14

L8

4.7 µF

150

pF

33 nH

C15

C19

150 pF

3.3 pF

i(OSC)

V

R4

390 Ω

SENSE

2627

28

303132

GND3

MULTIPLIER

FREQUENCY

LOW

BATTERY

CRYSTAL

OSCILLATOR

1TS

low noise

amplifier Q

ACTIVE

INDICATOR

GYRATOR

Q

LIMITER

FILTER

FILTER

2

DEMO-

DULATOR

3

4

MIXER Q

FILTER

ACTIVE

FILTER

GYRATOR

LIMITER

5

low noise

amplifier I

I

6

MIXER I

BAND GAP

REFERENCE

RF pre-amplifier

7

UAA2082H

L11

15 16

L10

ref

V

C5

P

V

13 14

L3

L2

12
11

GND1

10

120

8

5 nH

5 nH

150 pF

3.5 nH

3.5 nH

R1

Ω

C7

C6

C9

1.7 to

1.2 pF

1.5 pF

C8

1.5 pF

3 pF

C4 150 pF

P

V

= 930.50 MHz.

i(RF)

handbook, full pagewidth

Fig.6 Test circuit; f

RE

DO

BLI

to

decoder

1996 Jan 15 11

TPI

TPQ

IF testpoints

C1

1.2 pF

i(RF)

V

C3

3 pF

1.7 to

5

L1

nH

C2

1.0 pF

Pins 9, 17, 23 and 29 are not connected.

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

Table 3 Tolerances of components shown in Fig.6 (note 1)

COMPONENT

TOLERANCE

(%)

REMARK

Inductances

L1 ±10 Q

= 150 at 930 MHz

typ

L2, L3, L6, L7 − microstrip inductor
L4, L5 ±5Q
L8 ±10 Q
L10, L11 ±10 Q

= 100 at 930 MHz

typ

= 65 at 310 MHz

typ

= 150 at 930 MHz

typ

Resistors

−6

R1 to R4 ±2TC=(0±200) × 10

/K

Capacitors

C1, C2, C7, C8, C9, C15 ±5TC=(0±30) × 10−6/K; tan δ≤30 × 10−4at 1 MHz

−6

C3, C6, C12 − TC = (0 ±200) × 10
C4, C5, C14, C19 ±10 TC = (0 ±30) × 10

/K; tan δ≤30 × 10−4at 1 MHz

−6

/K; tan δ≤10 × 10−4at 1 MHz

C13 ±20

Note

1. The external oscillator signal V

has a frequency of f

i(OSC)

= 310.1667 MHz.

OSC

1996 Jan 15 12

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

PINNING (LQFP32)

SYMBOL PIN DESCRIPTION

TS 1 test switch; connection to ground

for normal operation
BLI 2 battery LOW indicator output
DO 3 data output
RE 4 receiver enable input
TPI 5 IF test point; I channel
TPQ 6 IF test point; Q channel
VI1RF 7 pre-amplifier RF input 1
VI2RF 8 pre-amplifier RF input 2
n.c. 9 not connected
RRFA 10 external emitter resistor for

pre-amplifier
GND1 11 ground 1 (0 V)
VO2RF 12 pre-amplifier RF output 2
VO1RF 13 pre-amplifier RF output 1
V

P

14 supply voltage
VI2MI 15 I channel mixer input 2
VI1MI 16 I channel mixer input 1
n.c. 17 not connected
VI1MQ 18 Q channel mixer input 1
VI2MQ 19 Q channel mixer input 2
GND2 20 ground 2 (0 V)
COM 21 gyrator filter resistor; common line
RGYR 22 gyrator filter resistor
n.c. 23 not connected
VO1MUL 24 frequency multiplier output 1
VO2MUL 25 frequency multiplier output 2
RMUL 26 external emitter resistor for

frequency multiplier
SENSE 27 battery LOW detector sense input
OSC 28 oscillator collector
n.c. 29 not connected
GND3 30 ground 3 (0 V)
OSB 31 oscillator base; crystal input
OSE 32 oscillator emitter

handbook, halfpage

1

TS

2

BLI

3

DO

4

RE

5

TPI

6

TPQ

7

VI1RF

8

VI2RF

OSE
32

OSB
31

GND3
30

n.c.

29

OSC

28

RMUL

SENSE
27

26

VO2MUL

25

UAA2082H

9

10

11

12

13

14

15

16

P

VO2RF

VO1RF

V

VI2MI

VI1MI

n.c.

RRFA

GND1

Fig.7 Pin configuration; LQFP32.

24
23
22
21
20
19
18
17

MLC228

VO1MUL

n.c.
RGYR
COM
GND2
VI2MQ
VI1MQ
n.c.

1996 Jan 15 13

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

CHIP DIMENSIONS AND BONDING PAD LOCATIONS

See Table 4 for bonding pad description and locations for x/y co-ordinates.

y

24 23 22 21 20 19

handbook, full pagewidth

25
26

18
17

Chip area: 18.15 mm
Chip thickness: 380 ±20µm.
Drawing not to scale.

2

3.83
mm

27
28

1
2

3

4

0

0

Where:

Pad 124 m x 124 mµµ
Pad not used

Pad 100 m x 100 mµµ
Pad 100 m x 100 m with reference point µµ

16

15

UAA2082U

14
13

12

x

5

6 7 8 9 10 11

4.74 mm

µPad number 1 (diameter 124 m)

MLC229

Fig.8 Bonding pad locations.

1996 Jan 15 14

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

Table 4 Bonding pad centre locations (dimensions in µm)

SYMBOL PAD DESCRIPTION x y

TPI 1 IF test point; I channel −32 1296
TPQ 2 IF test point; Q channel −32 1000
VI1RF 3 pre-amplifier RF input 1 −32 360
VI2RF 4 pre-amplifier RF input 2; note 1 0 0
RRFA 5 external emitter resistor for pre-amplifier 472 0
GND1 6 ground 1 (0 V) 1160 0
VO2RF 7 pre-amplifier RF output 2 1688 0
VO1RF 8 pre-amplifier RF output 1 2232 0
V

P

VI2MI 10 I channel mixer input 2 3608 0
VI1MI 11 I channel mixer input 1 4216 0
VI1MQ 12 Q channel mixer input 1 4216 360
VI2MQ 13 Q channel mixer input 2 4216 960
GND2 14 ground 2 (0 V) 4216 1360
COM 15 gyrator filter resistor; common line 4 216 2024
RGYR 16 gyrator filter resistor 4216 2496
VO1MUL 17 frequency multiplier output 1 4216 3136
VO2MUL 18 frequency multiplier output 2 4176 3456
RMUL 19 external emitter resistor for frequency multiplier 3668 3458
SENSE 20 battery LOW detector sense input 2952 3456
OSC 21 oscillator collector 2312 3456
GND3 22 ground 3 (0 V) 1832 3456
OSB 23 oscillator base; crystal input 1328 3456
OSE 24 oscillator emitter 432 3456
TS 25 test switch; connection to ground for normal operation −32 3456
BLI 26 battery LOW indicator output −32 3136
DO 27 data output −32 2512
RE 28 receiver enable input −32 2152

9 supply voltage 2760 0

lower left corner of chip (typical values) −278 −186

Note

1. All x/y co-ordinates are referenced to the centre of pad 4 (VI2RF); see Fig.8.

1996 Jan 15 15

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

INTERNAL CIRCUITS

handbook, full pagewidth

1

2

3

4

1 kΩ 1 kΩ

5
6

7

5 kΩ

5 kΩ

150 kΩ

32 31 30 28 27 26 25

n.c.

V

29

P

UAA2082H

V

P

24

V

P

23

n.c.

22

21

V

20

P

19

8

n.c.

150 Ω

9

121110

V

P

14

13

Fig.9 Internal circuits drawn for LQFP32.

1996 Jan 15 16

18
17

1615

n.c.

MLC493

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

MLC231

P

V

P

V

14

1312111098765432

UAA2082U

P

V

P

V

handbook, full pagewidth

150 Ω

Fig.10 Internal circuits drawn for naked die.

P

V

5

kΩ

2728 26 25 24 23 22 21 20 19 18 17 16 15

150

5

kΩ

kΩ

1

kΩ

1

1

kΩ

1996 Jan 15 17

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

FUNCTIONAL DESCRIPTION

The complete circuit consists of the following functional
blocks as shown in Figs 1 to 6.

Radio frequency amplifier

The RF amplifier is an emitter-coupled pair driving a
balanced cascode stage, which drives an external
balanced tuned circuit. Its bias current is set by an external
300 Ω resistor R1 to typically 770 µA. With this bias
current the optimum source resistance is 1.3 kΩ at VHF
and 1.0 kΩ at UHF. At 930 MHz a higher bias current is
required to achieve optimum gain. A value of 120 Ω is
used for R1, which corresponds with a bias current of
approximately 1.3 mA and an optimum source resistance
of approximately 600 Ω.The capacitors C1 and C2
transform a 50 Ωsource resistance to this optimum value.
The output drives a tuned circuit with capacitive divider
(C7, C8 and C9) to provide maximum power transfer to the
phase-splitting network and the mixers.

Mixers

The double balanced mixers consist of common base
input stages and upper switching stages driven from the
frequency multiplier. The 300 Ω input impedance of each
mixer acts together with external components (C10, C11;
L4, L5 respectively) as phase shifter/power splitter to
provide a differential phase shift of 90 degrees between
the I channel and the Q channel. At 930 MHz all external
phase shifter components are inductive (L10, L11; L4, L5).

The resonant circuit at output pin OSC selects the second
harmonic of the oscillator frequency. In other applications
a different multiplication factor may be chosen.

At 930 MHz an external oscillator circuit is required to
provide sufficient local oscillator signal for the frequency
multiplier.

Frequency multiplier

The frequency multiplier is an emitter-coupled pair driving
an external balanced tuned circuit. Its bias current is set by
external resistor R4 to typically 190 µA (173 MHz), 350 µA
(470 MHz) and 1 mA (930 MHz). The oscillator signal is
internally AC coupled to one input of the emitter-coupled
pair while the other input is internally grounded via a
capacitor. The frequency multiplier output signal between
pins VO1MUL and VO2MUL drives the upper switching
stages of the mixers. The bias voltage on pins VO1MUL
and VO2MUL is set by external resistor R3 to allow
sufficient voltage swing at the mixer outputs. The value of
R3 depends on the operating frequency: 1.5 kΩ
(173 MHz), 820 Ω (470 MHz) and 330 Ω (930 MHz).

Low noise amplifiers, active filters and gyrator filters

The low noise amplifiers ensure that the noise of the
following stages does not affect the overall noise figure.
The following active filters before the gyrator filters reduce
the levels of large signals from adjacent channels. Internal
AC couplings block DC offsets from the gyrator filter
inputs.

Oscillator

The oscillator is based on a transistor in common collector
configuration. It is followed by a cascode stage driving a
tuned circuit which provides the signal for the frequency
multiplier. The oscillator transistor requires an external
bias voltage V
current (typically 250 µA) is determined by the 1.5 kΩ
external resistor R5. The oscillator frequency is controlled
by an external 3rd overtone crystal in parallel resonance
mode. External capacitors between base and emitter
(C17) and from emitter to ground (C16) make the oscillator
transistor appear as having a negative resistance for small
signals; this causes the oscillator to start. Inductance L9
connected in parallel with capacitor C16 to the emitter of
the oscillator transistor prevents oscillation at the
fundamental frequency of the crystal.

1996 Jan 15 18

(1.22 V typ.). The oscillator bias

bias(osc)

The gyrator filters implement the transfer function of a 7th
order elliptic filter. Their cut-off frequencies are determined
by the 47 kΩ external resistor R2 between pins RGYR and
COM. The gyrator filter output signals are available on IF
test pins TPI and TPQ.

Limiters

The gyrator filter output signals are amplified in the limiter
amplifiers to obtain IF signals with removed amplitude
information.

Demodulator

The limiter amplifier output signals are fed to the
demodulator. The demodulator output DO is going LOW or
HIGH depending upon which of the input signals has a
phase lead.

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

Battery LOW indicator

The battery LOW indicator senses the supply voltage and
sets its output HIGH when the voltage at input SENSE is
less than Vth (typically 1.10 V). Low battery warning is

Band gap reference

The whole chip except the oscillator section can be
powered-up and powered-down by enabling and disabling
the band gap reference via the receiver enable pin RE.

available at BLI.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
Ground pins GND1, GND2 and GND3 connected together.

SYMBOL PARAMETER MIN. MAX. UNIT

V

P

T

stg

T

amb

V

es

supply voltage −0.3 +8.0 V
storage temperature −55 +125 °C
operating ambient temperature −10 +70 °C
electrostatic handling; note 1

pins VI1RF and VI2RF −1500 +2000 V
pin RRFA −500 +2000 V
pins VO1RF and VO2RF −2000 +250 V
pins V

and OSB −500 +500 V

P

pins OSC and OSE −2000 +500 V
other pins −2000 +2000 V

Note

1. Equivalent to discharging a 100 pF capacitor via a 1.5 kΩ resistor.

1996 Jan 15 19

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

DC CHARACTERISTICS

V

= 2.05 V; T

P

with crystal at pin OSB disconnected; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

V

P

I

P

I

P(off)

V

bias(osc)

Receiver enable input (pin RE)

V

IH

V

IL

I

IH

V

IL

Battery LOW indicator output (pin BLI)

V

OH

V

OL

V

th

Demodulator output (pin DO)

V

OH

V

OL

= −10 to +70 °C (typical values at T

amb

=25°C); measurements taken in test circuit Figs 1, 2, 3 or 4

amb

supply voltage 1.9 2.05 3.5 V
supply current VRE= HIGH;

f

= 173 and 470 MHz

i(RF)

= HIGH; f

V

RE

= 930 MHz 2.9 3.4 3.9 mA

i(RF)

2.3 2.7 3.2 mA

stand-by current VRE= LOW −−3µA
oscillator bias voltage 1.20 1.22 1.24 V

HIGH level input voltage 1.4 − V

P

V
LOW level input voltage 0 − 0.3 V
HIGH level input current VIH=VP= 3.5 V −−20 µA
LOW level input current VIL=0V 0 −−1.0 µA

HIGH level output voltage V
LOW level output voltage V
voltage threshold for battery

LOW indicator

VP= 2.05 V; T
V

T

HIGH level output voltage IDO= −10 µAV

< Vth; I

SENSE

> Vth; I

SENSE

= 2.05 to 3.5 V;

P

= −10 to +70 °C

amb

= −10 µAV

BLI

= +10 µA −−0.5 V

BLI

=25°C 1.05 1.10 1.15 V

amb

−0.5 −−V

P

1.03 1.10 1.17 V

−0.5 −−V

P

LOW level output voltage IDO= +10 µA −−0.5 V

1996 Jan 15 20

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

AC CHARACTERISTICS (173 MHz)

V

= 2.05 V; T

P

random bit sequence modulation (t
channel spacing; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Radio frequency input

P

i(ref)

Mixers to demodulator

α

acs

α

ci

α

c

α

sp

α

im

α

bl

f

offset

∆f

dev

t

on

=25°C; test circuit Figs 1 or 2; f

amb

= 250 ±25 µs measured between 10% and 90% of voltage amplitude) and 20 kHz

r

input sensitivity (P

i(ref)

is the
maximum available power at
the RF input of the test board)

adjacent channel selectivity T

BER ≤3⁄
T
V

T

= 172.941 MHz with ±4.0 kHz deviation; 1200 baud pseudo

i(RF)

; note 1 −−126.5 −123.5 dBm

100

= −10 to +70 °C; note 2 −−−120.5 dBm

amb

= 1.9 V −−−117.5 dBm

P

=25°C6972−dB

amb

= −10 to +70 °C67−−dB

amb

IF filter channel imbalance −−2dB
co-channel rejection − 47dB
spurious immunity 50 60 − dB
intermodulation immunity 55 60 − dB
blocking immunity ∆f >±1 MHz; note 3 78 85 − dB
frequency offset range

(3 dB degradation in sensitivity)
deviation range

deviation f = ±4.0 kHz ±2.0 −−kHz
deviation f = ±4.5 kHz ±2.5 −−kHz

2.5 − 7.0 kHz

(3 dB degradation in sensitivity)
receiver turn-on time data valid after setting RE input

−−5ms

HIGH; note 4

Notes

1. The bit error rate BER is measured using the test facility shown in Fig.12. Note that the BER test facility contains a
digital input filter equivalent to the one used in the PCA5000A, PCF5001 and PCD5003 POCSAG decoders.

2. Capacitor C16 requires re-adjustment to compensate temperature drift.

3. ∆f is the frequency offset between the required signal and the interfering signal.

4. Turn-on time is defined as the time from pin RE going HIGH to the reception of valid data on output pin DO. Turn-on
time is measured using an external oscillator (turn-on time using the internal oscillator is dependent upon the
oscillator circuitry).

1996 Jan 15 21

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

AC CHARACTERISTICS (470 MHz)

V

= 2.05 V; T

P

random bit sequence modulation (t
channel spacing; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Radio frequency input

P

i(ref)

Mixer input

P

i(mix)

Mixers to demodulator

α

acs

α

ci

α

c

α

sp

α

im

α

bl

f

offset

∆f

dev

t

on

=25°C; test circuit Figs 3 or 4; f

amb

= 250 ± 25 µs measured between 10% and 90% of voltage amplitude) and 20 kHz

r

input sensitivity (P
maximum available power at
the RF input of the test board)

i(ref)

is the

BER ≤3⁄
T
V

input sensitivity BER ≤3⁄

adjacent channel selectivity T

T

= 469.950 MHz with ±4.0 kHz deviation; 1200 baud pseudo

i(RF)

; note 1 −−124.5 −121.5 dBm

100

= −10 to +70 °C; note 2 −−−118.5 dBm

amb

= 1.9 V −−−115.5 dBm

P

; note 3 −−115.0 −110.0 dBm

100

=25°C6770−dB

amb

= −10 to +70 °C65−−dB

amb

IF filter channel imbalance −−2dB
co-channel rejection − 47dB
spurious immunity 50 60 − dB
intermodulation immunity 55 60 − dB
blocking immunity ∆f >±1 MHz; note 4 75 82 − dB
frequency offset range

(3 dB degradation in sensitivity)
deviation range

deviation f = ±4.0 kHz ±2.0 −−kHz
deviation f = ±4.5 kHz ±2.5 −−kHz

2.5 − 7.0 kHz

(3 dB degradation in sensitivity)
receiver turn-on time data valid after setting RE input

−−5ms

HIGH; note 5

Notes

1. The bit error rate BER is measured using the test facility shown in Fig.12. Note that the BER test facility contains a
digital input filter equivalent to the one used in the PCA5000A, PCF5001 and PCD5003 POCSAG decoders.

2. Capacitor C16 requires re-adjustment to compensate temperature drift.

3. Test circuit Fig.5. P

is the maximum available power at the input of the test board. The bit error rate BER is

i(mix)

measured using the test facility shown in Fig.12.

4. ∆f is the frequency offset between the required signal and the interfering signal.

5. Turn-on time is defined as the time from pin RE going HIGH to the reception of valid data on output pin DO. Turn-on
time is measured using an external oscillator (turn-on time using the internal oscillator is dependent upon the
oscillator circuitry).

1996 Jan 15 22

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

AC CHARACTERISTICS (930 MHz)

V

= 2.05 V; T

P

random bit sequence modulation (t
channel spacing; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Radio frequency input

P

i(ref)

Mixers to demodulator

α

acs

α

c

α

sp

α

im

α

bl

f

offset

∆f

dev

t

on

=25°C; test circuit Fig.6; note 1; f

amb

= 250 ± 25 µs measured between 10% and 90% of voltage amplitude) and 20 kHz

r

input sensitivity (P

i(ref)

is the
maximum available power at
the RF input of the test board)

adjacent channel selectivity T

BER ≤3⁄
V

P

amb

= 930.500 MHz with ±4.0 kHz deviation; 1200 baud pseudo

i(RF)

; note 2 −−120.0 −114.0 dBm

100

= 1.9 V −−−108.0 dBm

=25°C6069−dB
co-channel rejection − 510dB
spurious immunity 40 60 − dB
intermodulation immunity 53 60 − dB
blocking immunity ∆f >±1 MHz; note 3 65 74 − dB
frequency offset range

(3 dB degradation in sensitivity)
deviation range

deviation f = ±4.0 kHz ±2.0 −−kHz
deviation f = ±4.5 kHz ±2.5 −−kHz

2.5 − 7.0 kHz

(3 dB degradation in sensitivity)
receiver turn-on time data valid after setting RE input

−−5ms

HIGH; note 4

Notes

1. The external oscillator signal V

has a frequency of f

i(OSC)

= 310.1667 MHz and a level of −15 dBm.

OSC

2. The bit error rate BER is measured using the test facility shown in Fig.12. Note that the BER test facility contains a
digital input filter equivalent to the one used in the PCA5000A, PCF5001 and PCD5003 POCSAG decoders.

3. ∆f is the frequency offset between the required signal and the interfering signal.

4. Turn-on time is defined as the time from pin RE going HIGH to the reception of valid data on output pin DO. Turn-on
time is measured using an external oscillator (turn-on time using the internal oscillator is dependent upon the
oscillator circuitry).

1996 Jan 15 23

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

TEST INFORMATION
Tuning procedure for AC tests

1. Turn on the signal generator: f

gen=fi(RF)

+ 4 kHz, no modulation, V

= 1 mV (RMS).

i(RF)

2. Measure the IF with a counter connected to test pin TPI. Tune C16 to set the crystal oscillator to achieve fIF= 4 kHz
Change the generator frequency to f
frequency f
crystal frequency is f
signal must be used with f

= 172.941 MHz the crystal frequency is f

i(RF)

= 78.325 MHz. For a received input frequency f

XTAL

= 310.1667 MHz and a level of −15 dBm (for definition of crystal frequency, see

i(OSC)

gen=fi(RF)

− 4 kHz and check that fIF is also 4 kHz. For a received input
= 57.647 MHz, while for f

XTAL

i(RF)

= 930.500 MHz an external oscillator

= 469.950 MHz the

i(RF)

Table 1).

3. Set the signal generator to nominal frequency (f
wave modulation, V
receiver is tuned, to ensure V

= 1 mV (RMS). Note that the RF signal should be reduced in the following tests, as the

i(RF)

= 10 to 50 mV (p-p) on test pins TPI or TPQ.

o(IF)

) and turn on the modulation deviation ±4.0 kHz, 600 Hz square

i(RF)

4. Tune C15 (oscillator output circuit) and C12 (frequency multiplier output) to obtain a peak audio voltage on pin TPI.

5. Tune C3 and C6 (RF input and mixer input) to obtain a peak audio voltage on pin TPI. When testing the mixer input
sensitivity tune C23 instead of C3 and C6 (test circuit Fig.5).

6. Check that the output signal on pin TPQ is within 3 dB in amplitude and at 90° (±20°) relative phase of the signal on
pin TPI.

7. Check that data signal appears on output pin DO and proceed with the AC test.

AC test conditions
Table 5 Definitions for AC test conditions (see Table 6)

SIGNAL DESCRIPTION

Modulated test signal 1

Frequency 172.941, 469.950 or 930.500 MHz
Deviation ±4.0 kHz
Modulation 1200 baud pseudo random bit sequence
Rise time 250 ±25 µs (between 10% and 90% of final value)

Modulated test signal 2

Deviation ±2.4 kHz
Modulation 400 Hz sine wave

Other definitions

f
f
f
∆f
P
P
P
P

1
2
3

cs
1
2
3
i(ref)

frequency of signal generator 1
frequency of signal generator 2
frequency of signal generator 3
channel spacing (20 kHz)
maximum available power from signal generator 1 at the test board input
maximum available power from signal generator 2 at the test board input
maximum available power from signal generator 3 at the test board input
maximum available power at the test board input to give a Bit Error Rate (BER) ≤3⁄

test signal 1, in the absence of interfering signals and under the conditions as specified in Chapters
“AC characteristics (173 MHz)”, “AC characteristics (470 MHz)” and “AC characteristics (930 MHz)”

1996 Jan 15 24

for the modulated

100

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

Table 6 AC test conditions; notes 1 and 2

SYMBOL PARAMETER CONDITIONS TEST SIGNALS

α

α

α

α

α

f

offset

∆f

t

on

a

c

sp

im

bl

dev

adjacent channel selectivity;
Fig.11(b)

co-channel rejection; Fig.11(b) f2=f1±up to 3 kHz

spurious immunity; Fig.11(b) f2= 100 kHz to 2 GHz

intermodulation immunity;
Fig.11(c)

blocking immunity; Fig.11(b) f2=f1±1 MHz

frequency offset range;
Fig.11(a)

deviation range; Fig.11(a) deviation = ±2.5 to ±7 kHz; (∆f

receiver turn-on time; Fig.1 1(a) note 3

f2=f1±∆f

CS

generator 1: modulated test signal 1 P1=P
generator 2: modulated test signal 2 P

generator 1: modulated test signal 1 P
generator 2: modulated test signal 2 P

generator 1: modulated test signal 1 P
generator 2: modulated test signal 2 P

f2=f1±∆fcs; f3=f1±2∆f

cs

generator 1: modulated test signal 1 P1=P
generator 2: unmodulated P
generator 3: modulated test signal 2 P3=P

generator 1: modulated test signal 1 P
generator 2: modulated test signal 2 P

deviation = ±4.0 kHz, f1=f

i(RF)

± 2 kHz (f

offset(min)

)

generator 1: modulated test signal 1 P

dev(min)

to ∆f

dev(max)

)

generator 1: modulated test signal 1 P

generator 1: modulated test signal 1 P

+3dB

i(ref)

2=P1+αa(min)

i(ref)

2

+3dB

+3dB

+3dB

+3dB

+3dB

+3dB

+10dB

1=Pi(ref)
2=P1−αc(max)

1=Pi(ref)
2=P1+αsp( min)

2=P1+αim(min)

1=Pi(ref)
2=P1+αbl(min)

1=Pi(ref)

1=Pi(ref)

1=Pi(ref)

Notes

1. The tests are executed without load on pins TPI and TPQ.

2. All minimum and maximum values correspond to a bit error rate (BER) ≤

3. The BER measurement is started 5 ms (t
(BER ≤3⁄

100

).

) after VRE goes HIGH; BER is then measured for 100 bits

on(max)

1996 Jan 15 25

3

⁄

in the wanted signal (P1).

100

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

handbook, full pagewidth

(a) One generator.
(b) Two generators.
(c) Three generators.
(1) See Fig.12.

(a)

(b)

(c)

GENERATOR 1

R = 50 Ω

s

GENERATOR 1

R = 50 Ω

s

GENERATOR 2

R = 50 Ω

s

GENERATOR 1

R = 50 Ω

s

GENERATOR 2

R = 50 Ω

s

GENERATOR 3

R = 50 Ω

s

DEVICE

UNDER TEST

50 Ω 2-SIGNAL

POWER

COMBINER

50 Ω 3-SIGNAL

POWER

COMBINER

DEVICE

UNDER TEST

DEVICE

UNDER TEST

Fig.11 Test configurations.

BER TEST

FACILITY

BER TEST

FACILITY

BER TEST

FACILITY

MLC232

(1)



(1)



(1)



handbook, full pagewidth

GENERATOR

R = 50 Ω

s

DEVICE

UNDER TEST

DIGITAL

FILTER

250 µs

RISE TIME

Fig.12 BER test facility.

1996 Jan 15 26

CLOCK

RECOVERY

PRESET

DELAY

PSEUDO
RANDOM

SEQUENCE

GENERATOR

recovered clock
retimed

Rx data

DATA

COMPARATOR

MASTER

CLOCK

MLC233

to error

counter

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

PRINTED-CIRCUIT BOARDS

handbook, full pagewidth

Fig.13 PCB top view for LQFP32; test circuit Figs 1 and 3.

1996 Jan 15 27

MBD562

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

handbook, full pagewidth

Fig.14 PCB bottom view for LQFP32; test circuit Figs 1 and 3.

1996 Jan 15 28

MBD561

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

handbook, full pagewidth

C19

R3

VEE= GND; VC =VP.

TS

BLI

DO

RE

V

GND

L6L7

V

bosc

C14

C16

C12

UAA2082H

L8

C17

L9

R5

C18

V

sense

C15

C20

P

R6

C13

XTAL

DO TPI TPQ

R2

L5
L4

C11
C10

VIRF

C9

C7

C8

L3

C6

C4

L2

R1

MLC234

Fig.15 PCB top view with components for LQFP32; test circuit Fig.3.

1996 Jan 15 29

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

handbook, full pagewidth

C5

R4

C3

L1

C2

C1

MLC235

Fig.16 PCB bottom view with components for LQFP32; test circuit Fig.3.

1996 Jan 15 30

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

handbook, full pagewidth

C19

R3

V



GND

C12

L8

C17

L9

L6

R2

UAA2082H

L5

L4

L7

V

bosc

C14

V

sense

C15

C16

C20

P

R6

C13

XTAL

C11

C23

C21

V

L10

C10

C22

i RF

R5

C18

TS

BLI

DO

RE

DO TPI TPQ

MLC236

Fig.17 PCB top view with components for LQFP32; test circuit Fig.5.

1996 Jan 15 31

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

handbook, full pagewidth

C5

R4

Fig.18 PCB bottom view with components for LQFP32; test circuit Fig.5.

1996 Jan 15 32

MLC237

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

ok, full pagewidth

V

i(OSC)

GND

V

C13

P

R3

C14

C19

C15

C12

L6

L7

L8

TS
BLI
DO

RE
TPI

TPQ

R2

UAA2082H

C1

C2

C8

R1

C9L4L5

L11

L10

C7
L3

C4

L2

C6

L1

C3

Fig.19 PCB top view with components for LQFP32; test circuit Fig.6.

1996 Jan 15 33

V

MLC238

i(RF)

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

handbook, full pagewidth

C5

R4

Fig.20 PCB bottom view with components for LQFP32; test circuit Fig.6.

1996 Jan 15 34

MLC239

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

PACKAGE OUTLINE

LQFP32: plastic low profile quad flat package; 32 leads; body 7 x 7 x 1.4 mm

c

y

X

24 17

25

pin 1 index

32

1

16

Z

E

e

w M

b

p

9

8

A

H

E

E

A

2

A

SOT358-1

Q

(A )

A

1

L

detail X

3

θ

L

p

e

DIMENSIONS (mm are the original dimensions)

mm

OUTLINE

VERSION

SOT358 -1

A

A1A2A3bpcE

max.

0.20

1.45

1.60

0.05

0.25

1.35

IEC JEDEC EIAJ

UNIT

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

w M

b

p

D

H

D

0.4

0.3

Z

D

B

v M

0 2.5 5 mm

scale

(1)

(1) (1)(1)

D

0.18

7.1

0.12

6.9

REFERENCES

eH

H

7.1

6.9

0.8

9.15

8.85

1996 Jan 15 35

v M

D

A

B

9.15

8.85

LLpQZywv θ

E

0.69

0.75

0.45

0.59

0.25 0.11.0 0.2

EUROPEAN

PROJECTION

Z

D

0.9

0.5

ISSUE DATE

93-06-29
95-12-19

0.9

0.5

E

o

7

o

0

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

Reflow soldering

Reflow soldering techniques are suitable for all LQFP
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

Wave soldering is not recommended for LQFP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

(order code 9398 652 90011).

If wave soldering cannot be avoided, the following
conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)
soldering technique should be used.

• The footprint must be at an angle of 45° to the board

direction and must incorporate solder thieves
downstream and at the side corners.

Even with these conditions, do not consider wave
soldering LQFP packages LQFP48 (SOT313-2),
LQFP64 (SOT314-2) or LQFP80 (SOT315-1).

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1996 Jan 15 36

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Jan 15 37

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

NOTES

1996 Jan 15 38

Philips Semiconductors Product specification

Advanced pager receiver UAA2082

NOTES

1996 Jan 15 39

Philips Semiconductors – a worldwide company

Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428)

BUENOS AIRES, Tel. [phone], Fax. [phone]

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Piazza IV Novembre 3, 20124 MILANO,
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Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong,

Yongsan-ku, SEOUL, Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA,

SELANGOR, Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TX 79905,

Tel. [phone], Fax. [phone]

th

floor, Suite 51,

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]

New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]

Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

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Exchange Bldg. ST-2/A, Block 9, KDA Scheme 5, Clifton,
KARACHI 75600, Tel. [phone],
Fax. [phone]

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Tel. [phone], Fax. [phone]

Ukraine: Philips UKRAINE, 2A Akademika Koroleva str., Office 165,

252148 KIEV, Tel.[phone], Fax. [phone]

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276 Bath Road, Hayes, MIDDLESEX UB3 5BX,
Tel. [phone], Fax. [phone]

United States:811 East Arques Avenue, SUNNYVALE,

CA 94088-3409, Tel. [phone], Fax. [phone]

Uruguay: Coronel Mora 433, MONTEVIDEO,

Tel. [phone], Fax. [phone]

Internet: http://www.semiconductors.philips.com/ps/
For all other countries apply to: Philips Semiconductors,

International Marketing and Sales, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands,
Telex 35000 phtcnl, Fax. [phone]

SCDS47 © Philips Electronics N.V. 1996

All rights are reserved. Reproduction in whole or in part is prohibited without the
prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation
or contract, is believed to be accurate and reliable and may be changed without
notice. No liability will be accepted by the publisher for any consequence of its
use. Publication thereof does not convey nor imply any license under patent- or
other industrial or intellectual property rights.

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