Datasheet UAA2073AM Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

UAA2073AM

Image rejecting front-end
for GSM applications

Product specification
Supersedes data of 1996 Oct 23
File under Integrated Circuits, IC17

1997 Jan 27

Philips Semiconductors Product specification

Image rejecting front-end
for GSM applications

FEATURES

• Low-noise, wide dynamic range amplifier

• Very low noise figure

• Dual balanced mixer for at least 30 dB on-chip image

rejection

• IF I/Q combination network for 175 MHz

• Down-conversion mixer for closed-loop transmitters

• Independent TX/RX fast on/off power-down modes

• Very small outline packaging

• Very small application (no image filter).

APPLICATIONS

• 900 MHz front-end for GSM hand-portable equipment

• Compact digital mobile communication equipment

• TDMA receivers.

GENERAL DESCRIPTION

UAA2073AM contains both a receiver front-end and a high
frequency transmit mixer intended for GSM
(Global System for Mobile communications) cellular
telephones. Designed in an advanced BiCMOS process it
combines high performance with low power consumption
and a high degree of integration, thus reducing external
component costs and total front-end size.

The main advantage of the UAA2073AM is its ability to
provide over 30 dB of image rejection. Consequently, the
image filter between the LNA and the mixer is suppressed
and the duplexer design is eased, compared with a
conventional front-end design.

UAA2073AM

Image rejection is achieved in the internal architecture by
two RF mixers in quadrature and two all-pass filters in
I and Q IF channels that phase shift the IF by 45° and 135°
respectively. The two phase shifted IFs are recombined
and buffered to furnish the IF output signal.

This means that signals presented at the RF input at
LO − IF frequency are rejected through this signal
processing while signals at LO + IF frequency can form the
IF signal.

The receiver section consists of a low-noise amplifier that
drives a quadrature mixer pair. The IF amplifier has
on-chip 45° and 135° phase shifting and a combining
network for image rejection.The IF driver has differential
open-collector type outputs.

The LO part consists of an internal all-pass type phase
shifter to provide quadrature LO signals to the receive
mixers. The all-pass filters outputs are buffered before
being fed to the receive mixers.

The transmit section consists of a down-conversion mixer
and a transmit IF driver stage. In the transmit mode an
internal LO buffer is used to drive the transmit IF
down-conversion mixer.

All RF and IF inputs or outputs are balanced to reduce
EMC issues.

Fast power-up switching is possible. A synthesizer-on
(SX) mode enables LO buffers independent of the other
circuits. When SXON pin is HIGH, all internal buffers on
the LO path of the circuit are turned on, thus minimizing
LO pulling when remainder of receive chain is
powered-up.

ORDERING INFORMATION

TYPE

NUMBER

UAA2073AM SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1

1997 Jan 27 2

NAME DESCRIPTION VERSION

PACKAGE

Philips Semiconductors Product specification

Image rejecting front-end

UAA2073AM

for GSM applications

QUICK REFERENCE DATA

Note 1.

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

V

CC

I

CC(RX)

I

CC(TX)

NF

RX

G

CPRX

IR image frequency rejection 30 45 − dB
T

amb

Note

1. For conditions see Chapters “DC characteristics” and “AC characteristics”.

BLOCK DIAGRAM

supply voltage 3.6 3.75 5.3 V
receive supply current 21 26 32 mA
transmit supply current 9 12 15 mA
noise figure on demonstration board (including matching

− 3.6 4.7 dB

and PCB losses)
conversion power gain 19 22 25 dB

operating ambient temperature −30 +25 +75 °C

handbook, full pagewidth

V

CC1

RFINA
RFINB

GND1

V

CC2

RXON

TXON

SXON

GND2

n.c. n.c. SBS

4

5
6

7

15

11
12

REGULATORS

10

16

2 3

LNA

low-noise

amplifier

CURRENT

RX
TX
IF
LO

UAA2073AM

QUADRATURE

PHASE

SHIFTER

+45

+135

o

C

o

C

TRANSMIT SECTION

LOCAL OSCILLATOR

SECTION

LOINA

1

IF

COMBINER

RECEIVE SECTION

MIXER

81718

9

TXINATXINBLOINB

20

19

14

13

MGD149

IFA

IFB

TXOIFA
TXOIFB

Fig.1 Block diagram.

1997 Jan 27 3

Philips Semiconductors Product specification

Image rejecting front-end
for GSM applications

PINNING

SYMBOL PIN DESCRIPTION

SBS 1 sideband selection (should be

grounded for f

LO<fRF

n.c. 2 not connected
n.c. 3 not connected
V

CC1

4 supply voltage for receive and

transmit sections
RFINA 5 RF input A (balanced)
RFINB 6 RF input B (balanced)
GND1 7 ground 1 for receive and transmit

sections
TXINA 8 transmit mixer input A (balanced)
TXINB 9 transmit mixer input B (balanced)
SXON 10 hardware power-on of LO section

(including buffers to RX and TX)
RXON 11 hardware power-on for receive

section and LO buffers to RX
TXON 12 hardware power-on for transmit

section and LO buffers to TX
TXOIFB 13 transmit mixer IF output B

(balanced)
TXOIFA 14 transmit mixer IF output A

(balanced)
V

CC2

15 supply voltage for LO section
GND2 16 ground 2 for LO section
LOINB 17 LO input B (balanced)
LOINA 18 LO input A (balanced)
IFB 19 IF output B (balanced)
IFA 20 IF output A (balanced)

)

handbook, halfpage

UAA2073AM

SBS

1

n.c.

2

n.c.

3

V

4

CC1

RFINA

5

UAA2073AM

6

RFINB

7

GND1

TXINA

8
9

TXINB

10

SXON RXON

Fig.2 Pin configuration.

MGD150

20
19
18
17
16
15
14
13
12
11

IFA
IFB
LOINA
LOINB
GND2
V

CC2

TXOIFA
TXOIFB
TXON

1997 Jan 27 4

Philips Semiconductors Product specification

Image rejecting front-end
for GSM applications

FUNCTIONAL DESCRIPTION
Receive section

The circuit contains a low-noise amplifier followed by two
high dynamic range mixers. These mixers are of the
Gilbert-cell type. The whole internal architecture is fully
differential.

The local oscillator, shifted in phase to 45° and 135°,
mixes the amplified RF to create I and Q channels.
The two I and Q channels are buffered, phase shifted by
45° and 135° respectively, amplified and recombined
internally to realize the image rejection.

Pin SBS allows sideband selection:

• f

LO>fRF

• fLO<fRF (SBS = 0).
Where fRF is the frequency of the wanted signal.

(SBS = 1)

UAA2073AM

Balanced signal interfaces are used for minimizing
crosstalk due to package parasitics. The RF differential
input impedance is 150 Ω (parallel real part), chosen to
minimize current consumption at best noise performance.

The IF output is differential and of the open-collector type,
tuned for 175 MHz. Typical application will load the output
with a 680 Ω resistor load at each IF output, plus a 1 kΩ
load consisting in the input impedance of the IF filter or in
the input impedance of the matching network for the IF
filter. The power gain refers to the available power on this
1kΩ load. The path to V
achieved via tuning inductors. The output voltage is limited
to VCC+3Vbe or 3 diode forward voltage drops.

Fast switching, on/off, of the receive section is controlled
by the hardware input RXON.

for the DC current should be

CC

handbook, full pagewidth

V

CC1

RFINA
RFINB

GND1

LNA

MIXER

MIXER

LOIN

IF

amplifier

IF

amplifier

+45

+135

o

o

RXON

Fig.3 Block diagram, receive section.

SBS

IF

COMBINER

MBH188


IFA

IFB

1997 Jan 27 5

Philips Semiconductors Product specification

Image rejecting front-end
for GSM applications

Local oscillator section

The Local Oscillator (LO) input directly drives the two
internal all-pass networks to provide quadrature LO to the
receive mixers.

The LO differential input impedance is 50 Ω (parallel real
part).

A synthesizer-on (SX) mode is used to power-up the
buffering on the LO inputs, minimizing the pulling effect on
the external VCO when entering transmit or receive
modes.

This mode is active when the SXON input is HIGH. Table 1
shows status of circuit in accordance with TXON, RXON
and SXON inputs.

handbook, halfpage

to RX

UAA2073AM

Transmit mixer

This mixer is used for down-conversion to the transmit IF.
Its inputs are coupled to the transmit RF and down-convert
it to a modulated transmit IF frequency which is phase
locked with the baseband modulation.

The transmit mixer provides a differential input at 200 Ω
and a differential output driver buffer for a 1 kΩ load.
The IF outputs are low impedance (emitter followers).

Fast switching, on/off, of the transmit section is controlled
by the hardware input TXON.

V

CC2

RXON

TXON

SXON

GND2

LOINA

QUAD

LOINB

Fig.4 Block diagram, LO section.

to TX

MBH189


handbook, halfpage

LOIN

Fig.5 Block diagram, transmit mixer.

TX MIXER

TXOIFA
TXOIFB

MBH190

TXINBTXON

TXINA

1997 Jan 27 6

Philips Semiconductors Product specification

Image rejecting front-end

UAA2073AM

for GSM applications

Table 1 Control of power status

EXTERNAL PIN LEVEL

TXON RXON SXON

LOW LOW LOW power-down mode
LOW HIGH LOW RX mode: receive section and LO buffers to RX on

HIGH LOW LOW TX mode: transmit section and LO buffers to TX on

LOW LOW HIGH SX mode: complete LO section on

LOW HIGH HIGH SRX mode: receive section on and SX mode active
HIGH LOW HIGH STX mode: transmit section on and SX mode active
HIGH HIGH LOW receive and transmit sections on; specification not guaranteed
HIGH HIGH HIGH receive and transmit sections on; specification not guaranteed

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

CC

∆GND difference in ground supply voltage applied between GND1 and GND2 − 0.6 V
P

i(max)

T

j(max)

P

dis(max)

T

stg

supply voltage − 9V

maximum power input − +20 dBm
maximum operating junction temperature − +150 °C
maximum power dissipation in stagnant air − 250 mW
IC storage temperature −65 +150 °C

CIRCUIT MODE OF OPERATION

HANDLING

Every pin withstands the ESD test in accordance with MIL-STD-883C class 2 (method 3015.5).

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air 120 K/W

1997 Jan 27 7

Philips Semiconductors Product specification

Image rejecting front-end

UAA2073AM

for GSM applications

DC CHARACTERISTICS

VCC= 3.75 V; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Pins: V

V

CC

I

CC(RX)

I

CC(TX)

I

CC(SX)

I

CC(SRX)

I

CC(STX)

I

CC(PD)

CC1

and V

Pins: SXON, RXON, TXON and SBS

V

th

V

IH

V

IL

I

IH

I

IL

Pins: RFINA and RFINB

V

I(RFIN)

Pins: IFA and IFB

I

O(IF)

Pins: TXINA and TXINB

V

I(TXIN)

Pins: TXOIFA and TXOIFB

V

O(TXOIF)

Pins: LOINA and LOINB

V

I(LOIN)

=25°C; unless otherwise specified.

amb

CC2

supply voltage over full temperature range 3.6 3.75 5.3 V
supply current in RX mode 21 26 32 mA
supply current in TX mode 9 12 15 mA
supply current in SX mode 4.5 5.8 7.0 mA
supply current in SRX mode 23 28 34 mA
supply current in STX mode 12.5 15.0 19.5 mA
supply current in power-down mode − 0.01 50 µA

CMOS threshold voltage note 1 − 1.25 − V
HIGH level input voltage 0.7V

CC

− V

CC

V
LOW level input voltage −0.3 − 0.8 V
HIGH level static input current pin at VCC− 0.4 V −1 − +1 µA
LOW level static input current pin at 0.4 V −1 − +1 µA

DC input voltage level receive section on 2.0 2.2 2.4 V

DC output current receive section on 2.3 3.0 3.8 mA

DC input voltage level transmit section on 2.1 2.4 2.6 V

DC output voltage level transmit section on 1.8 1.9 2.1 V

DC input voltage level receive section on 2.3 2.5 2.8 V

transmit section on 2.3 2.5 2.8 V

Note

1. The referenced inputs should be connected to a valid CMOS input level.

1997 Jan 27 8

Philips Semiconductors Product specification

Image rejecting front-end

UAA2073AM

for GSM applications

AC CHARACTERISTICS

V

= 3.75 V; T

CC

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Receive section (receive section on)

R

iRX

C

iRX

f

iRX

RL

iRX

G

CPRX

G

rip

∆G/T gain variation with temperature note 2 −20 −15 −10 mdB/K
DES1 1 dB desensitization input power interferer frequency offset

CP1

RX

IP2D

RX

IP3

RX

NF

RX

R

LRX

C

LRX

f

oRX

IR image frequency rejection f

= −30 to +75 °C; fIF= 175 MHz; unless otherwise specified.

amb

RF input resistance (real part of

balanced; at 942.5 MHz − 150 −Ω

the parallel input impedance)
RF input capacitance (imaginary

balanced; at 942.5 MHz − 1 − pF
part of the parallel input
impedance)

RF input frequency 925 − 960 MHz
return loss on matched RF input note 1 15 20 − dB
conversion power gain differential RF input to

19 22 25 dB
differential IF output matched to
1kΩ differential

gain ripple as a function of RF

note 2 − 0.2 0.5 dB

frequency

−−30 − dBm

3 MHz

1 dB input compression point note 1 −25 −23.0 − dBm
half IF spurious rejection

note 2 60 −−dB

(fRF=fLO+ 0.5fIF)
3rd order intercept point

note 2 −21.5 −15 − dBm

referenced to the RF input
overall noise figure RF input to differential IF output;

note 3

= +25°C − 3.6 4.0 dB

T

amb

over full temperature range −−4.7 dB

typical application IF output load

balanced − 1000 −Ω

impedance
IF output load capacitance unbalanced −−2pF
IF frequency range − 175 − MHz

LO<fRF

30 45 − dB

1997 Jan 27 9

Philips Semiconductors Product specification

Image rejecting front-end

UAA2073AM

for GSM applications

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Local oscillator section (RXON or TXON or SXON = 1)

f

iLO

R

iLO

C

iLO

RL

iLO

∆RL

iLO

P

iLO

RI

LO

Transmit section (transmit section on)

Z

oTX

Z

LTX

C

LTX

R

iTX

C

iTX

f

iTX

RL

iTX

G

CPTX

f

oTX

CP1

TX

IP2

TX

IP3

TX

NF

TX

RI

TX

I

TX

Timing

t

start

Notes

1. Measured and guaranteed only on Philips UAA2073AM demonstration board at T

2. Measured and guaranteed only on Philips UAA2073AM demonstration board.

3. This value includes printed-circuit board and balun losses on Philips UAA2073AM demonstration board over full
temperature range.

LO input frequency 750 − 785 MHz
LO input resistance (real part of

balanced; at 767.5 MHz − 80 −Ω

the parallel input impedance)
LO input capacitance (imaginary

balanced; at 767.5 MHz − 2 − pF
part of the parallel input
impedance)

return loss on matched input

note 2 10 15 − dB
(including power-down mode)

return loss variation between SX,

linear S11 variation; note 1 − 20 − mU
SRX and STX modes

LO input power level −7 −4 0 dBm
reverse isolation LOIN to RFIN at LO frequency;

40 −−dB

note 2

TX IF output impedance −−200 Ω
TX IF load impedance − 1 − kΩ
TX IF load capacitance −−2pF
TX RF input resistance

balanced; at 897.5 MHz − 200 −Ω
(real part of the parallel input
impedance)

TX RF input capacitance

balanced; at 897.5 MHz − 1 − pF
(imaginary part of the parallel
input impedance)

TX input frequency 880 − 915 MHz
return loss on matched TX input note 1 15 20 − dB
conversion power gain from 200 Ω to 1 kΩ output;

5 7.4 10 dB

note 2
TX output frequency 40 − 200 MHz
1 dB input compression point note 1 −22 −17.5 − dBm
2nd order intercept point − +20 − dBm
3rd order intercept point −12 −9 − dBm
noise figure double sideband; notes 2 and 3 − 9.8 12 dB
reverse isolation TXIN to LOIN; note 2 40 −−dB
isolation LOIN to TXIN; note 2 40 −−dB

start-up time of each block 1 5 20 µs

=25°C.

amb

1997 Jan 27 10

Philips Semiconductors Product specification

Image rejecting front-end
for GSM applications

INTERNAL PIN CONFIGURATION

PIN SYMBOL

1 SBS

10 SXON

11 RXON

12 TXON

4V

15 V

7 GND1 0

16 GND2 0

5 RFINA +2.2

CC1
CC2

DC

VOLTAGE

(V)

+3.75
+3.75

EQUIVALENT CIRCUIT

V

CC

1

GND

MBH682

UAA2073AM

V

CC

6 RFINB +2.2

8 TXINA +2.4

9 TXINB +2.4

13 TXOIFB +1.9

14 TXOIFA +1.9

13, 14

GND

V

CC

MBH684

MBH683

6, 95, 8

GND

1997 Jan 27 11

Philips Semiconductors Product specification

Image rejecting front-end
for GSM applications

DC

PIN SYMBOL

17 LOINB +2.5

18 LOINA +2.5

19 IFB +3.0

VOLTAGE

(V)

UAA2073AM

EQUIVALENT CIRCUIT

17 18

MBH685

V

CC

19 20

V

CC

GND

20 IFA +3.0

GND

MBH686

GND

1997 Jan 27 12

Philips Semiconductors Product specification

Image rejecting front-end
for GSM applications

APPLICATION INFORMATION

IFO

175 MHz

C34

CC

V

IFB

220 pF

120

R4

8.2 pF

3.9 pF

nH

680 Ω

L16

100

C33 8.2 pF

IFA

C17

3.9 pF

L11

120nHL12

R3

680 Ω

nH

C19

L15 100 nH

L8 12 nH

C12

C18

LOIN

750 to

785 MHz

L7 12 nH

C9 3.3 pF

C11

27 pF

L9

22

nH

27 pF

27 pF

CC

V

C10 3.3 pF

L14 180 nH

C13

R1

C15

40 to

TXOIF

200 MHz

C31 6.8 pF

L13 180 nH

C14

390 pF

R2

180 Ω

390 pF

180 Ω

C32 6.8 pF

TXON

R10

680

UAA2073AM

MGD151

CC

V

kΩ

SBS

R5

C20

201

680 kΩ

27 pF

27

pF

192

183

174

165

156

147

138

129

1110

27 nH

L6

C7

27 pF

L4 15 nH

C5 1.8 pF

RXON

UAA2073AM

C23

27 pF

C24

1 nF

L1

CC

V

C2

L2 15 nH

18 nH

C4

27 pF

L3 15 nH

C3 1.5 pF

27 pF

L5 15 nH

C1 1.5 pF

C8

2

2

SXON

2

27 pF

C27

R8

C25

R9

C26

C6 1.8 pF

1

680

27

1

680

27

1

kΩ

pF

kΩ

pF

C28

handbook, full pagewidth

Fig.6 Philips demonstration board diagram.

120 pF



RFIN

925 to 960 MHz

1997 Jan 27 13



TXIN

880 to 915 MHz

Philips Semiconductors Product specification

Image rejecting front-end
for GSM applications

Table 2 UAA2073AM demonstration board parts list

PART VALUE SIZE LOCATION

Resistors

R1 180 Ω 0805 TXOIF
R2 180 Ω 0805 TXOIF
R3 680 Ω 0805 IFO
R4 680 Ω 0805 IFO
R5 680 kΩ 0805 SBS
R8 680 kΩ 0805 RXON
R9 680 kΩ 0805 SXON

R10 680 kΩ 0805 TXON

Capacitors

C1 1.5 pF 0805 RFIN
C2 27 pF 0805 RFIN
C3 1.5 pF 0805 RFIN
C4 27 pF 0805 RFIN
C5 1.8 pF 0805 TXIN
C6 1.8 pF 0805 TXIN
C7 27 pF 0805 TXIN
C8 27 pF 0805 TXIN

C9 3.3 pF 0805 LOIN
C10 3.3 pF 0805 LOIN
C11 27 pF 0805 LOIN
C12 27 pF 0805 LOIN
C13 390 pF 0805 TXOIF
C14 390 pF 0805 TXOIF
C15 27 pF 0805 V
C17 3.9 pF 0805 IFO
C18 3.9 pF 0805 IFO
C19 220 pF 0805 IF/V
C20 27 pF 0805 SBS
C23 27 pF 0805 V
C24 1 nF 0805 V
C25 27 pF 0805 RXON
C26 27 pF 0805 SXON
C27 27 pF 0805 TXON
C28 120 pF 0805 V
C31 6.8 pF 0805 TXOIF
C32 6.8 pF 0805 TXOIF
C33 8.2 pF 0805 IFO
C34 8.2 pF 0805 IFO

CCLO

CCLNA
CCLNA

CC

CC

UAA2073AM

PART VALUE SIZE LOCATION

Inductors

L1 18 nH 0805 RFIN
L2 15 nH 0805 RFIN
L3 15 nH 0805 RFIN
L4 15 nH 0805 TXIN
L5 15 nH 0805 TXIN
L6 27 nH 0805 TXIN
L7 12 nH 0805 LOIN
L8 12 nH 0805 LOIN

L9 22 nH 0805 LOIN
L11 120 nH 1008 IFO
L12 120 nH 1008 IFO
L13 180 nH 0805 TXOIF
L14 180 nH 0805 TXOIF
L15 100 nH 1008 IFO
L16 100 nH 1008 IFO

Other components

COMPONENT DESCRIPTIONS

IC1 UAA2073AM

SMA/RIM sockets for RF and IF inputs/outputs

SMB V

Component manufacturers

All surface mounted resistors and capacitors are from
Philips Components. The small value capacitors are
multilayer ceramic with NPO dielectric. The inductors are
from Coilcraft UK.

CC

socket

1997 Jan 27 14

Philips Semiconductors Product specification

Image rejecting front-end
for GSM applications

PACKAGE OUTLINE

SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm

20

D

c

y

Z

11

E

H

UAA2073AM

SOT266-1

A

X

v M

E

A

pin 1 index

110

w M

b

e

DIMENSIONS (mm are the original dimensions)

UNIT A

mm

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

A

max.

1.5

A2A

1

0.1501.4

1.2

0.25

b

3

p

0.32

0.20

p

cD

0.20

6.6

0.13

6.4

0 2.5 5 mm

scale

(1)E(1)

eHELLpQZywv θ

4.5

0.65 1.0 0.2

4.3

6.6

6.2

Q

A

2

A

1

detail X

0.65

0.75

0.45

0.45

(A )

L

p

L

A

3

θ

0.13 0.1

0.48

0.18

(1)

o

10

o

0

OUTLINE
VERSION

SOT266-1

IEC JEDEC EIAJ

REFERENCES

1997 Jan 27 15

EUROPEAN

PROJECTION

ISSUE DATE

90-04-05
95-02-25

Philips Semiconductors Product specification

Image rejecting front-end
for GSM applications

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

Reflow soldering

Reflow soldering techniques are suitable for all SSOP
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

Wave soldering isnot recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

(order code 9398 652 90011).

UAA2073AM

If wave soldering cannot be avoided, the following
conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)
soldering technique should be used.

• The longitudinal axis of the package footprint must

be parallel to the solder flow and must incorporate
solder thieves at the downstream end.

Even with these conditions, only consider wave
soldering SSOP packages that have a body width of

4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1997 Jan 27 16

Philips Semiconductors Product specification

Image rejecting front-end

UAA2073AM

for GSM applications

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Jan 27 17

Philips Semiconductors Product specification

Image rejecting front-end
for GSM applications

UAA2073AM

NOTES

1997 Jan 27 18

Philips Semiconductors Product specification

Image rejecting front-end
for GSM applications

UAA2073AM

NOTES

1997 Jan 27 19

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]/xxx
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. [phone], Fax. [phone]

Hungary: seeAustria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.

Worli, MUMBAI 400 018, Tel. [phone], Fax. [phone]

Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax. [phone]
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180,

Tel. [phone], Fax. [phone]
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. [phone], Fax. [phone]
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. [phone], Fax. [phone]
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. [phone], Fax. [phone]
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. [phone], Fax. [phone]
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax. [phone]

South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone], Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1997 SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 437027/1200/02/pp20 Date of release: 1997 Jan 27 Document order number: 9397 750 01642