Datasheet UAA2080U-10, UAA2080T-V1, UAA2080H-V1 Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of 1995 Nov 27
File under Integrated Circuits, IC03

1996 Jan 15

INTEGRATED CIRCUITS

UAA2080

Advanced pager receiver

1996 Jan 15 2

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

FEATURES

• Wide frequency range: VHF, UHF and 900 MHz bands

• High sensitivity

• High dynamic range

• Electronically adjustable filters on chip

• Suitable for data rates up to 2400 bits/s

• Wide frequency offset and deviation range

• Fully POCSAG compatible FSK receiver

• Power on/off mode selectable by the chip enable input

• Low supply voltage; low power consumption

• High integration level

• Interfaces directly to the PCA5000A, PCF5001 and

PCD5003 POCSAG decoders.

APPLICATIONS

• Wide area paging

• On-site paging

• Telemetry

• RF security systems

• Low bit-rate wireless data links.

GENERAL DESCRIPTION

The UAA2080 is a high-performance low-power radio
receiver circuit primarily intended for VHF, UHF and
900 MHz pager receivers for wide area digital paging
systems, employing direct FM non-return-to-zero (NRZ)
frequency shift keying (FSK).

The receiver design is based on the direct conversion
principle where the input signal is mixed directly down to
the baseband by a local oscillator on the signal frequency.
Two complete signal paths with signals of 90° phase
difference are required to demodulate the signal.
All channel selectivity is provided by the built-in IF filters.
The circuit makes extensive use of on-chip capacitors to
minimize the number of external components.

The UAA2080 was designed to operate together with the
PCA5000A, PCF5001 or PCD5003 POCSAG decoders,
which contain a digital input filter for optimum call success
rate.

ORDERING INFORMATION

TYPE

NUMBER

PACKAGE

NAME DESCRIPTION VERSION

UAA2080H LQFP32 plastic low profile quad flat package; 32 leads; body 7 × 7 × 1.4 mm SOT358-1
UAA2080T SO28 plastic small outline package; 28 leads; body width 7.5 mm SOT136-1
UAA2080U 28 pads naked die; see Fig.9

1996 Jan 15 3

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

P

supply voltage 1.9 2.05 3.5 V

I

P

supply current 2.3 2.7 3.2 mA

I

P(off)

stand-by current −−3µA

P

i(ref)

RF input sensitivity BER ≤3⁄

100

; ±4 kHz deviation;

data rate 1200 bits/s; T

amb

=25°C

f

i(RF)

= 173 MHz −−126.5 −123.5 dBm

f

i(RF)

= 470 MHz −−124.5 −121.5 dBm

f

i(RF)

= 930 MHz −−120.0 −114.0 dBm

P

i(mix)

mixer input sensitivity BER ≤3⁄

100

; f

i(RF)

= 470 MHz;
±4 kHz deviation;
data rate 1200 bits/s; T

amb

=25°C

−−115.0 −110.0 dBm

V

th

detection threshold for battery
LOW indicator

1.95 2.05 2.15 V

T

amb

operating ambient temperature −10 − +70 °C

1996 Jan 15 4

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

BLOCK AND TEST DIAGRAMS (173 MHz)

handbook, full pagewidth

MLC700

ACTIVE

FILTER

GYRATOR

FILTER

ACTIVE

FILTER

GYRATOR

FILTER

low noise

amplifier Q

low noise

amplifier I

15 16

18

19

RF pre-amplifier

11

R1

10

8

C3

5 to

20 pF

L1

43

nH

C2

8.2 pF

C1

8.2 pF

BAND GAP

REFERENCE

IF testpoints

TPI

TPQ

5

6

7

GND1

L3

22 nH

L2

22 nH

12

C4 1 nF

C5 1 nF

C10

22 pF

C11

22 pF

C7

8.2 pF

C6

5 to

20 pF

C8

8.2 pF

C9

8.2 pF

L4

150

nH

L5

150

nH

13 14

CRYSTAL

OSCILLATOR

FREQUENCY

MULTIPLIER

V

ref

BLI

RE

to

decoder

3

2

1TS

C18

1 nF

R5

1.8

kΩ

L9

560

nH

C16

13 to

50 pF

XTAL

C17

15 pF

C14

1 nF

V

P

V

P

C13

10 µF

R7

100 Ω

2627

TDC

28

C15

27 pF

L827nH

GND3

303132

R4

2.2 kΩ

C19

1 nF

UAA2080H

24

25

C12

5 to 20 pF

L7

33 nH

L6

33 nH

R3

1.5 kΩ

R247kΩ

22

21

20

GND2

BATTERY

LOW

INDICATOR

LIMITER

Q

DEMO-

DULATOR

LIMITER

I

DO

MIXER I

MIXER Q

V

P

4

330

Ω

V

i(RF)

V

P

Fig.1 Block, test and application diagram drawn for LQFP32; f

i(RF)

= 172.941 MHz.

Pins 9, 17, 23 and 29 are not connected.

1996 Jan 15 5

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

handbook, full pagewidth

MLC701

ACTIVE

FILTER

GYRATOR

FILTER

ACTIVE

FILTER

GYRATOR

FILTER

low noise

amplifier

Q

low noise

amplifier

I

10 11 12 13 14

LIMITER

Q

DEMODULATOR

LIMITER

I

RF pre-amplifier

6

330

Ω

R1

54

C3

5 to 20 pF

L1

43 nH

C2

8.2 pF

C1

8.2 pF

BAND GAP

REFERENCE

IF testpoints

TPI TPQ

12 3

GND1

L2

22 nH

L3

22 nH

7

C4 1 nF

C5 1 nF

C10 C11

10 pF 10 pF

C7

8.2 pF

C6

5 to 20 pF

8.2 pF

C8

C9

8.2 pF

L4
150
nH

L5
150
nH

GND2

89

CRYSTAL

OSCILLATOR

FREQUENCY

MULTIPLIER

BATTERY

LOW

INDICATOR

V

P

V

P

28

V

ref

BLI

DO

RE

decoder

27 26 25

TS

13 to
50 pF

C18

1 nF

R5

1.8 kΩ

L9

560 nH

C16

XTAL

C17

15 pF

16 151718

C14
1 nF

V

P

R2

47 kΩ

C12

5 to 20 pF

L7

33 nHL633 nH

R3

1.5 kΩ

V

P

C13
10 µF

1920

TDC

21

C15
27
pF

L8
27
nH

GND3

222324

R 4

2.2 kΩ

C 19
1 nF

UAA2080T
UAA2080U

MIXER I MIXER Q

R7
100 Ω

V

i(RF)

Fig.2 Block, test and application diagram drawn for SO28 and naked die; f

i(RF)

= 172.941 MHz.

1996 Jan 15 6

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Table 1 Tolerances of components shown in Figs 1 and 2 (notes 1 and 2)

Notes

1. Recommended crystal: f

XTAL

= 57.647 MHz (crystal with 8 pF load), 3rd overtone, pullability >2.75 × 10−6/pF
(change in frequency between series resonance and resonance with 8 pF series capacitor at 25 °C), dynamic
resistance R1 < 40 Ω, ∆f=±5×10−6 for T

amb

= −10 to +55 °C with 25 °C reference, calibration plus aging tolerance:

−5 × 10−6to +15 × 10−6.

2. This crystal recommendation is based on economic aspects and practical experience. Normally the spreads for R1,
pullability and calibration do not show their worst case limits simultaneously in one crystal. In such a rare event, the
tuning range will be reduced to an insufficient level.

COMPONENT

TOLERANCE

(%)

REMARK

Inductances

L1 ±5Q

min

= 100 at 173 MHz

L2, L3, L6, L7 ±20 Q

min

= 50 at 173 MHz; TC = (+25 to +125) × 10−6/K

L4, L5 ±10 Q

min

= 30 at 173 MHz; TC = (+25 to +125) × 10−6/K

L8 ±20 Q

min

= 30 at 173 MHz; TC = (+25 to +125) × 10−6/K

L9 ±10 Q

min

= 30 at 57 MHz; TC = (+25 to +125) × 10−6/K

Resistors

R1 to R7 ±2 TC = +50 × 10−6/K

Capacitors

C1, C2, C7, C8, C9, C15 ±5TC=(0±30) × 10−6/K; tan δ≤ 30 × 10−4at 1 MHz
C3, C6, C12 − TC = (−750 ±300) × 10

−6

/K; tan δ≤50 × 10−4at 1 MHz

C4, C5, C14, C18, C19 ±10 TC = (0 ±30) × 10

−6

/K; tan δ≤10 × 10−4at 1 MHz

C10, C11 ±5TC=(0±30) × 10

−6

/K; tan δ≤21 × 10−4at 1 MHz
C13 ±20
C16 − TC = (−1700 ±500) × 10

−6

/K; tan δ≤50 × 10−4at 1 MHz

C17 ±5TC=(0±30) × 10

−6

/K; tan δ≤26 × 10−4at 1 MHz

1996 Jan 15 7

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

BLOCK AND TEST DIAGRAMS (470 MHz)

handbook, full pagewidth

MLC702

ACTIVE

FILTER

GYRATOR

FILTER

ACTIVE

FILTER

GYRATOR

FILTER

low noise

amplifier Q

low noise

amplifier I

15 16

18

19

RF pre-amplifier

11

R1

10

8

C3

2.5 to

6 pF

L1

12.5

nH

C2

2.7 pF

C1

2.7 pF

BAND GAP

REFERENCE

IF testpoints

TPI

TPQ

5

6

7

GND1

L3

8 nH

L2

8 nH

12

C4 1 nF

C5 1 nF

C10

22 pF

C11

22 pF

C7

2.7 pF

C6

2.5 to

6 pF

C8

2.7 pF

C9

2.7 pF

L4

40

nH

L5

40

nH

13 14

CRYSTAL

OSCILLATOR

FREQUENCY

MULTIPLIER

V

ref

BLI

RE

to

decoder

3

2

1TS

C18

1 nF

R5

1.8

kΩ

L9

560

nH

C16

13 to

50 pF

XTAL

C17

15 pF

C14

1 nF

V

P

V

P

C13

10 µF

2627

TDC

28

C15

3 to

10 pF

L8

100

nH

GND3

303132

R4

1.2 kΩ

C19

1 nF

UAA2080H

24

25

C12

2.5 to 6 pF

L7

8 nH

L6

8 nH

R3

820 Ω

R247kΩ

22

21

20

GND2

BATTERY

LOW

INDICATOR

LIMITER

Q

DEMO-

DULATOR

LIMITER

I

DO

MIXER I

MIXER Q

V

P

4

330

Ω

V

i(RF)

V

P

Fig.3 Block, test and application diagram drawn for LQFP32; f

i(RF)

= 469.95 MHz.

Pins 9, 17, 23 and 29 are not connected.

1996 Jan 15 8

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

handbook, full pagewidth

MLC703

ACTIVE

FILTER

GYRATOR

FILTER

ACTIVE

FILTER

GYRATOR

FILTER

low noise

amplifier

Q

low noise

amplifier

I

10 11 12 13 14

LIMITER

Q

DEMODULATOR

LIMITER

I

RF pre-amplifier

6

330

Ω

R1

54

C3

2.5 to 6 pF
L1

12.5 nH

C2

2.7 pF

C1

2.7 pF

BAND GAP

REFERENCE

IF testpoints

TPI TPQ

12 3

GND1

L2

8 nH

L3

8 nH

7

C4 1 nF

C5 1 nF

C10 C11

22 pF 22 pF

C7

2.7 pF

C6

2.5 to 6 pF

2.7 pF

C8

C9

2.7 pF

L4
40
nH

L5
40
nH

GND2

89

CRYSTAL

OSCILLATOR

FREQUENCY

MULTIPLIER

BATTERY

LOW

INDICATOR

V

P

V

P

28

V

ref

BLI

DO

RE

decoder

27 26 25

TS

13 to
50 pF

C18

1 nF

R5

1.8 kΩ

L9

560 nH

C16

XTAL

C17

15 pF

16 151718

C14
1 nF

V

P

R2

47 kΩ

C12

2.5 to 6 pF

L7

8 nHL68 nH

R3
820 Ω

V

P
C13
10 µF

1920

TDC

21

C15
3 to
10 pF

L8
100
nH

GND3

222324

R 4

1.2 kΩ

C 19
1 nF

UAA2080T
UAA2080U

MIXER I MIXER Q

V

i(RF)

Fig.4 Block, test and application diagram drawn for SO28 and naked die; f

i(RF)

= 469.95 MHz.

1996 Jan 15 9

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

handbook, full pagewidth

MLC704

ACTIVE

FILTER

GYRATOR

FILTER

ACTIVE

FILTER

GYRATOR

FILTER

low noise

amplifier Q

low noise

amplifier I

15 16

18

19

RF pre-amplifier

1110

8

V

i(RF)

BAND GAP

REFERENCE

IF testpoints

TPI

TPQ

5

6

7

GND1

12

C10

22 pF

C11

22 pF

C21

5.6 pF

C5

1 nF

C23

2.5 to 6 pF

C22

5.6 pF

L10

12.5 nH

L4

40

nH

L5

40

nH

13 14

CRYSTAL

OSCILLATOR

FREQUENCY

MULTIPLIER

V

ref

BLI

RE

to

decoder

3

2

1TS

C18

1 nF

R5

1.8

kΩ

L9

560

nH

C16

13 to

50 pF

XTAL

C17

15 pF

C14

1 nF

V

P

V

P

C13

10 µF

2627

TDC

28

C15

3 to

10 pF

L8

100

nH

GND3

303132

R4

1.2 kΩ

C19

1 nF

UAA2080H

24

25

C12

2.5 to 6 pF

L7

8 nH

L6

8 nH

R3

820 Ω

R247kΩ

22

21

20

GND2

BATTERY

LOW

INDICATOR

LIMITER

Q

DEMO-

DULATOR

LIMITER

I

DO

MIXER I

MIXER Q

V

P

4

V

P

Fig.5 Mixer input sensitivity test circuit; f

i(RF)

= 469.95 MHz.

1996 Jan 15 10

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Table 2 Tolerances of components shown in Figs 3, 4 and 5 (notes 1 and 2)

Notes

1. Recommended crystal: f

XTAL

= 78.325 MHz (crystal with 8 pF load), 3rd overtone, pullability >2.75 × 10−6/pF
(change in frequency between series resonance and resonance with 8 pF capacitor at 25 °C), dynamic resistance
R1 < 30 Ω, ∆f=±5×10−6 for T

amb

= −10 to +55 °C with 25 °C reference, calibration plus aging tolerance:

−5 × 10−6to +15 × 10−6.

2. This crystal recommendation is based on economic aspects and practical experience. Normally the spreads for R1,
pullability and calibration do not show their worst case limits simultaneously in one crystal. In such a rare event, the
tuning range will be reduced to an insufficient level.

COMPONENT

TOLERANCE

(%)

REMARK

Inductances

L1, L10 ±5Q

min

= 145 at 470 MHz

L2, L3, L6, L7 ±20 Q

min

= 50 at 470 MHz; TC = (+25 to +125) × 10−6/K

L4, L5 ±10 Q

min

= 40 at 470 MHz; TC = (+25 to +125) × 10−6/K

L8 ±10 Q

min

= 30 at 156 MHz; TC = (+25 to +125) × 10−6/K

L9 ±10 Q

min

= 40 at 78 MHz; TC = (+25 to +125) × 10−6/K

Resistors

R1 to R5 ±2 TC = +50 × 10−6/K

Capacitors

C1, C2, C7, C8, C9 ±5TC=(0±30) × 10−6/K; tan δ≤30 × 10−4 at 1 MHz
C3, C6, C12, C23 − TC = (−750 ±300) × 10

−6

/K; tan δ≤50 × 10−4at 1 MHz

C4, C5, C14, C18 to C22 ±10 TC = (0 ±30) × 10

−6

/K; tan δ≤10 × 10−4 at 1 MHz

C10, C11 ±5TC=(0±30) × 10

−6

/K; tan δ≤21 × 10−4 at 1 MHz
C13 ±20
C16 − TC = (−1700 ±500) × 10

−6

/K; tan δ≤50 × 10−4at 1 MHz

C17 ±5TC=(0±30) × 10

−6

/K; tan δ≤26 × 10−4at 1 MHz

1996 Jan 15 11

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

BLOCK AND TEST DIAGRAM (930 MHz)

handbook, full pagewidth

MLC705

ACTIVE

FILTER

GYRATOR

FILTER

ACTIVE

FILTER

GYRATOR

FILTER

low noise

amplifier Q

low noise

amplifier I

15 16

18

19

RF pre-amplifier

11

R1

10

8

C3

1.7 to

3 pF

L1

5

nH

C2

1.0 pF

C1

1.2 pF

BAND GAP

REFERENCE

IF testpoints

TPI

TPQ

5

6

7

GND1

L3

3.5 nH

L2

3.5 nH

12

C4 150 pF

C5

150 pF

L10

5 nH

L11

5 nH

C7

1.5 pF

C6

1.7 to

3 pF

C8

1.5 pF

C9

1.2 pF

L4

12.5

nH

L5

12.5

nH

13 14

CRYSTAL

OSCILLATOR

FREQUENCY

MULTIPLIER

V

i(OSC)

V

ref

BLI

RE

to

decoder

3

2

1TS

C14

150

pF

V

P

V

P

C13

4.7 µF

2627

TDC

28

3.3 pF

C15

L8

33 nH

GND3

303132

R4

390 Ω

C19

150 pF

UAA2080H

24

25

C12

1.7 to 3 pF

L7

3 nH

L6

3 nH

R3

330 Ω

R247kΩ

22

21

20

GND2

BATTERY

LOW

INDICATOR

LIMITER

Q

DEMO-

DULATOR

LIMITER

I

DO

MIXER I

MIXER Q

V

P

4

120

Ω

V

i(RF)

V

P

Fig.6 Test circuit; f

i(RF)

= 930.50 MHz.

Pins 9, 17, 23 and 29 are not connected.

1996 Jan 15 12

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Table 3 Tolerances of components shown in Fig.6 (note 1)

Note

1. The external oscillator signal V

i(OSC)

has a frequency of f

OSC

= 310.1667 MHz.

COMPONENT

TOLERANCE

(%)

REMARK

Inductances

L1 ±10 Q

typ

= 150 at 930 MHz
L2, L3, L6, L7 − microstrip inductor
L4, L5 ±5Q

typ

= 100 at 930 MHz
L8 ±10 Q

typ

= 65 at 310 MHz
L10, L11 ±10 Q

typ

= 150 at 930 MHz

Resistors

R1 to R4 ±2TC=(0±200) × 10−6/K;

Capacitors

C1, C2, C7, C8, C9, C15 ±5TC=(0±30) × 10−6/K; tan δ≤30 × 10−4at 1 MHz
C3, C6, C12 − TC = (0 ±200) × 10

−6

/K; tan δ≤30 × 10−4at 1 MHz

C4, C5, C14, C19 ±10 TC = (0 ±30) × 10

−6

/K; tan δ≤10 × 10−4at 1 MHz

C13 ±20

1996 Jan 15 13

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

PINNING (LQFP32)

SYMBOL PIN DESCRIPTION

TS 1 test switch; connection to ground

for normal operation
BLI 2 battery LOW indicator output
DO 3 data output
RE 4 receiver enable input
TPI 5 IF test point; I channel
TPQ 6 IF test point; Q channel
VI1RF 7 pre-amplifier RF input 1
VI2RF 8 pre-amplifier RF input 2
n.c. 9 not connected
RRFA 10 external emitter resistor for

pre-amplifier
GND1 11 ground 1 (0 V)
VO2RF 12 pre-amplifier RF output 2
VO1RF 13 pre-amplifier RF output 1
V

P

14 supply voltage
VI2MI 15 I channel mixer input 2
VI1MI 16 I channel mixer input 1
n.c. 17 not connected
VI1MQ 18 Q channel mixer input 1
VI2MQ 19 Q channel mixer input 2
GND2 20 ground 2 (0 V)
COM 21 gyrator filter resistor; common line
RGYR 22 gyrator filter resistor
n.c. 23 not connected
VO1MUL 24 frequency multiplier output 1
VO2MUL 25 frequency multiplier output 2
RMUL 26 external emitter resistor for

frequency multiplier

TDC 27 DC test point; no external

connection for normal operation
OSC 28 oscillator collector
n.c. 29 not connected
GND3 30 ground 3 (0 V)
OSB 31 oscillator base; crystal input
OSE 32 oscillator emitter

Fig.7 Pin configuration; LQFP32.

handbook, halfpage

1
2

3
4
5

6

7

8

24
23
22
21
20
19
18
17

9

10

11

12

13

14

15

16

32

31

30

29

28

27

26

25

TS
BLI
DO

RE
TPI

TPQ
VI1RF
VI2RF

n.c.

RRFA

GND1

VO2RF

VO1RF

V

P

VI2MI

VI1MI

VO1MUL

n.c.
RGYR
COM
GND2
VI2MQ
VI1MQ

OSE

OSB

GND3

n.c.

OSC

TDC

RMUL

VO2MUL

n.c.

UAA2080H

MLC706

1996 Jan 15 14

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

PINNING (SO28)

SYMBOL PIN DESCRIPTION

TPI 1 IF test point; I channel
TPQ 2 IF test point; Q channel
VI1RF 3 pre-amplifier RF input 1
VI2RF 4 pre-amplifier RF input 2
RRFA 5 external emitter resistor for

pre-amplifier
GND1 6 ground 1 (0 V)
VO2RF 7 pre-amplifier RF output 2
VO1RF 8 pre-amplifier RF output 1
V

P

9 supply voltage
VI2MI 10 I channel mixer input 2
VI1MI 11 I channel mixer input 1
VI1MQ 12 Q channel mixer input 1
VI2MQ 13 Q channel mixer input 2
GND2 14 ground 2 (0 V)
COM 15 gyrator filter resistor; common line
RGYR 16 gyrator filter resistor
VO1MUL 17 frequency multiplier output 1
VO2MUL 18 frequency multiplier output 2
RMUL 19 external emitter resistor for frequency

multiplier

TDC 20 DC test point; no external connection

for normal operation
OSC 21 oscillator collector
GND3 22 ground 3 (0 V)
OSB 23 oscillator base; crystal input
OSE 24 oscillator emitter
TS 25 test switch; connection to ground for

normal operation
BLI 26 battery LOW indicator output
DO 27 data output
RE 28 receiver enable input

Fig.8 Pin configuration; SO28.

1
2
3
4
5
6
7
8

9
10
11
12
13

28
27
26
25
24
23
22
21

20
19
18
17
16
1514

UAA2080T

TPI

TPQ
VI1RF
VI2RF
RRFA
GND1

VO2RF
VO1RF

V

P

VI2MI

VI1MI
VI1MQ
VI2MQ

GND2

RE
DO
BLI
TS
OSE
OSB
GND3
OSC
TDC
RMUL
VO2MUL
VO1MUL
RGYR
COM

MBB972

1996 Jan 15 15

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

CHIP DIMENSIONS AND BONDING PAD LOCATIONS

See Table 4 for bonding pad description and locations for x/y co-ordinates.

Fig.9 Bonding pad locations.

Chip area: 18.15 mm2.
Chip thickness: 380 ±20 µm.
Drawing not to scale.

handbook, full pagewidth

MLC707

28

1
2

3

4

5

6 7 8 9 10 11

UAA2080U

3.83
mm

4.74 mm

0

0

y

x

24 23 22 21 20 19

18
17

16

15

14
13

12

27

26

25

Where:

µPad number 1 (diameter 124 m)

Pad not used

Pad 124 m x 124 mµµ

Pad 100 m x 100 mµµ
Pad 100 m x 100 m with reference point µµ

1996 Jan 15 16

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Table 4 Bonding pad centre locations (dimensions in µm)

Note

1. All x/y co-ordinates are referenced to the centre of pad 4 (VI2RF); see Fig.9.

SYMBOL PAD DESCRIPTION x y

TPI 1 IF test point; I channel −32 1296
TPQ 2 IF test point; Q channel −32 1000
VI1RF 3 pre-amplifier RF input 1 −32 360
VI2RF 4 pre-amplifier RF input 2; note 1 0 0
RRFA 5 external emitter resistor for pre-amplifier 472 0
GND1 6 ground 1 (0 V) 1160 0
VO2RF 7 pre-amplifier RF output 2 1688 0
VO1RF 8 pre-amplifier RF output 1 2232 0
V

P

9 supply voltage 2760 0
VI2MI 10 I channel mixer input 2 3608 0
VI1MI 11 I channel mixer input 1 4216 0
VI1MQ 12 Q channel mixer input 1 4216 360
VI2MQ 13 Q channel mixer input 2 4216 960
GND2 14 ground 2 (0 V) 4216 1360
COM 15 gyrator filter resistor; common line 4216 2024
RGYR 16 gyrator filter resistor 4216 2496
VO1MUL 17 frequency multiplier output 1 4216 3136
VO2MUL 18 frequency multiplier output 2 4176 3456
RMUL 19 external emitter resistor for frequency multiplier 3668 3458
TDC 20 DC test point; no external connection for normal operation 2952 3456
OSC 21 oscillator collector 2312 3456
GND3 22 ground 3 (0 V) 1832 3456
OSB 23 oscillator base; crystal input 1328 3456
OSE 24 oscillator emitter 432 3456
TS 25 test switch; connection to ground for normal operation −32 3456
BLI 26 battery LOW indicator output −32 3136
DO 27 data output −32 2512
RE 28 receiver enable input −32 2152

lower left corner of chip (typical values) −278 −186

1996 Jan 15 17

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

INTERNAL CIRCUITS

Fig.10 Internal circuits drawn for LQFP32.

handbook, full pagewidth

MGA788

8

7

UAA2080H

6

5

1 kΩ 1 kΩ

4

150 kΩ

3

5 kΩ

5 kΩ

2

1

13

121110

150 Ω

9

n.c.

V

P

1615

V

P

14

32 31 30 28 27 26 25

24

V

P

V

P

8.15 kΩ

n.c.

29

19

18
17

n.c.

20

22

21

V

P

23

n.c.

1996 Jan 15 18

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Fig.11 Internal circuits drawn for SO28 and naked die.

handbook, full pagewidth

MBB974 - 1

2728 26 25 24 23 22 21 20 19 18 17 16 15

V

P

V

P

V

P

V

P

14

1312111098765432

1

UAA2080T

UAA2080U

150

kΩ

5

k

Ω

5

k

Ω

1

kΩ

1

kΩ

8.15

k

Ω

V

P

150Ω

1996 Jan 15 19

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

FUNCTIONAL DESCRIPTION

The complete circuit consists of the following functional
blocks as shown in Figs 1 to 6.

Radio frequency amplifier

The RF amplifier is an emitter-coupled pair driving a
balanced cascode stage, which drives an external
balanced tuned circuit. Its bias current is set by an external
300 Ω resistor R1 to typically 770 µA. With this bias
current the optimum source resistance is 1.3 kΩ at VHF
and 1.0 kΩ at UHF. At 930 MHz a higher bias current is
required to achieve optimum gain. A value of 120 Ω is
used for R1, which corresponds with a bias current of
approximately 1.3 mA and an optimum source resistance
of approximately 600 Ω.The capacitors C1 and C2
transform a 50 Ω source resistance to this optimum value.
The output drives a tuned circuit with capacitive divider
(C7, C8 and C9) to provide maximum power transfer to the
phase-splitting network and the mixers.

Mixers

The double balanced mixers consist of common base
input stages and upper switching stages driven from the
frequency multiplier. The 300 Ω input impedance of each
mixer acts together with external components (C10, C11;
L4, L5 respectively) as phase shifter/power splitter to
provide a differential phase shift of 90 degrees between
the I channel and the Q channel. At 930 MHz all external
phase shifter components are inductive (L10, L11; L4, L5).

Oscillator

The oscillator is based on a transistor in common collector
configuration. It is followed by a cascode stage driving a
tuned circuit which provides the signal for the frequency
multiplier. The oscillator bias current (typically 250 µA) is
determined by the 1.8 kΩ external resistor R5.
The oscillator frequency is controlled by an external 3rd
overtone crystal in parallel resonance mode. External
capacitors between base and emitter (C17) and from
emitter to ground (C16) make the oscillator transistor
appear as having a negative resistance for small signals;
this causes the oscillator to start. Inductance L9 connected
in parallel with capacitor C16 to the emitter of the oscillator
transistor prevents oscillation at the fundamental
frequency of the crystal.

The resonant circuit at output pin OSC selects the second
harmonic of the oscillator frequency. In other applications
a different multiplication factor may be chosen.

At 930 MHz an external oscillator circuit is required to
provide sufficient local oscillator signal for the frequency
multiplier.

Frequency multiplier

The frequency multiplier is an emitter-coupled pair driving
an external balanced tuned circuit. Its bias current is set by
external resistor R4 to typically 190 µA (173 MHz), 350 µA
(470 MHz) and 1 mA (930 MHz). The oscillator signal is
internally AC coupled to one input of the emitter-coupled
pair while the other input is internally grounded via a
capacitor. The frequency multiplier output signal between
pins VO1MUL and VO2MUL drives the upper switching
stages of the mixers. The bias voltage on pins VO1MUL
and VO2MUL is set by external resistor R3 to allow
sufficient voltage swing at the mixer outputs. The value of
R3 depends on the operating frequency: 1.5 kΩ
(173 MHz), 820 Ω (470 MHz) and 330 Ω (930 MHz).

Low noise amplifiers, active filters and gyrator filters

The low noise amplifiers ensure that the noise of the
following stages does not affect the overall noise figure.
The following active filters before the gyrator filters reduce
the levels of large signals from adjacent channels. Internal
AC couplings block DC offsets from the gyrator filter
inputs.

The gyrator filters implement the transfer function of a 7th
order elliptic filter. Their cut-off frequencies are determined
by the 47 kΩ external resistor R2 between pins RGYR and
COM. The gyrator filter output signals are available on IF
test pins TPI and TPQ.

Limiters

The gyrator filter output signals are amplified in the limiter
amplifiers to obtain IF signals with removed amplitude
information.

Demodulator

The limiter amplifier output signals are fed to the
demodulator. The demodulator output DO is going LOW or
HIGH depending upon which of the input signals has a
phase lead.

1996 Jan 15 20

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Battery LOW indicator

The battery LOW indicator senses the supply voltage and
sets its output HIGH when the supply voltage is less than
Vth (typically 2.05 V). Low battery warning is available at
BLI.

Band gap reference

The whole chip can be powered-up and powered-down by
enabling and disabling the band gap reference via the
receiver enable pin RE.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
Ground pins GND1, GND2 and GND3 connected together.

Note

1. Equivalent to discharging a 100 pF capacitor via a 1.5 kΩ resistor.

SYMBOL PARAMETER MIN. MAX. UNIT

V

P

supply voltage −0.3 +8.0 V

V

es

electrostatic handling (note 1)

pins VI1RF and VI2RF −1500 +2000 V
pin RRFA −500 +2000 V
pins VO1RF and VO2RF −2000 +250 V
pins V

P

and OSB −500 +500 V

pins OSC and OSE −2000 +500 V
other pins −2000 +2000 V

T

stg

storage temperature −55 +125 °C

T

amb

operating ambient temperature −10 +70 °C

1996 Jan 15 21

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

DC CHARACTERISTICS

V

P

= 2.05 V; T

amb

= −10 to +70 °C (typical values at T

amb

=25°C); measurements taken in test circuit Figs 1, 2, 3 or 4

with crystal at pin OSB disconnected; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

V

P

supply voltage 1.9 2.05 3.5 V

I

P

supply current VRE= HIGH;

f

i(RF)

= 173 and 470 MHz

2.3 2.7 3.2 mA

V

RE

= HIGH; f

i(RF)

= 930 MHz 2.9 3.4 3.9 mA

I

P(off)

stand-by current VRE= LOW −−3µA

Receiver enable input (pin RE)

V

IH

HIGH level input voltage 1.4 − V

P

V

V

IL

LOW level input voltage 0 − 0.3 V

I

IH

HIGH level input current VIH=VP= 3.5 V −−20 µA

V

IL

LOW level input current VIL=0V 0 −−1.0 µA

Battery LOW indicator output (pin BLI)

V

OH

HIGH level output voltage VP< Vth; I

BLI

= −10 µAV

P

−0.5 −−V

V

OL

LOW level output voltage VP> Vth; I

BLI

= +10 µA −−0.5 V

V

th

voltage threshold for
battery LOW indicator

1.95 2.05 2.15 V

Demodulator output (pin DO)

V

OH

HIGH level output voltage IDO= −10 µAV

P

−0.5 −−V

V

OL

LOW level output voltage IDO= +10 µA −−0.5 V

1996 Jan 15 22

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

AC CHARACTERISTICS (173 MHz)

V

P

= 2.05 V; T

amb

=25°C; test circuit Figs 1 or 2; f

i(RF)

= 172.941 MHz with ±4.0 kHz deviation; 1200 baud pseudo

random bit sequence modulation (t

r

= 250 ±25 µs measured between 10% and 90% of voltage amplitude) and 20 kHz

channel spacing; unless otherwise specified.

Notes

1. The bit error rate BER is measured using the test facility shown in Fig.13. Note that the BER test facility contains a
digital input filter equivalent to the one used in the PCA5000A, PCF5001 and PCD5003 POCSAG decoders.

2. Capacitor C16 requires re-adjustment to compensate temperature drift.

3. ∆f is the frequency offset between the required signal and the interfering signal.

4. Turn-on time is defined as the time from pin RE going HIGH to the reception of valid data on output pin DO. Turn-on
time is measured using an external oscillator (turn-on time using the internal oscillator is dependent upon the
oscillator circuitry).

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Radio frequency input

P

i(ref)

input sensitivity (P

i(ref)

is the
maximum available power at
the RF input of the test board)

BER ≤3⁄

100

; note 1 −−126.5 −123.5 dBm

T

amb

= −10 to +70 °C; note 2 −−−120.5 dBm

V

P

= 1.9 V −−−117.5 dBm

Mixers to demodulator

α

acs

adjacent channel selectivity T

amb

=25°C6972−dB

T

amb

= −10 to +70 °C67−−dB

α

ci

IF filter channel imbalance −−2dB

α

c

co-channel rejection − 47dB

α

sp

spurious immunity 50 60 − dB

α

im

intermodulation immunity 55 60 − dB

α

bl

blocking immunity ∆f >±1 MHz; note 3 78 85 − dB

f

offset

frequency offset range
(3 dB degradation in sensitivity)

deviation f = ±4.0 kHz ±2.0 −−kHz
deviation f = ±4.5 kHz ±2.5 −−kHz

∆f

dev

deviation range
(3 dB degradation in sensitivity)

2.5 − 7.0 kHz

t

on

receiver turn-on time data valid after setting RE input

HIGH; note 4

−−5ms

1996 Jan 15 23

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

AC CHARACTERISTICS (470 MHz)

V

P

= 2.05 V; T

amb

=25°C; test circuit Figs 3 or 4; f

i(RF)

= 469.950 MHz with ±4.0 kHz deviation; 1200 baud pseudo

random bit sequence modulation (t

r

= 250 ± 25 µs measured between 10% and 90% of voltage amplitude) and 20 kHz

channel spacing; unless otherwise specified.

Notes

1. The bit error rate BER is measured using the test facility shown in Fig.13. Note that the BER test facility contains a
digital input filter equivalent to the one used in the PCA5000A, PCF5001 and PCD5003 POCSAG decoders.

2. Capacitor C16 requires re-adjustment to compensate temperature drift.

3. Test circuit Fig.5. P

i(mix)

is the maximum available power at the input of the test board. The bit error rate BER is

measured using the test facility shown in Fig.13.

4. ∆f is the frequency offset between the required signal and the interfering signal.

5. Turn-on time is defined as the time from pin RE going HIGH to the reception of valid data on output pin DO. Turn-on
time is measured using an external oscillator (turn-on time using the internal oscillator is dependent upon the
oscillator circuitry).

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Radio frequency input

P

i(ref)

input sensitivity (P

i(ref)

is the
maximum available power at
the RF input of the test board)

BER ≤3⁄

100

; note 1 −−124.5 −121.5 dBm

T

amb

= −10 to +70 °C; note 2 −−−118.5 dBm

V

P

= 1.9 V −−−115.5 dBm

Mixer input

P

i(mix)

input sensitivity BER ≤3⁄

100

; note 3 −−115.0 −110.0 dBm

Mixers to demodulator

α

acs

adjacent channel selectivity T

amb

=25°C6770−dB

T

amb

= −10 to +70 °C65−−dB

α

ci

IF filter channel imbalance −−2dB

α

c

co-channel rejection − 47dB

α

sp

spurious immunity 50 60 − dB

α

im

intermodulation immunity 55 60 − dB

α

bl

blocking immunity ∆f >±1 MHz; note 4 75 82 − dB

f

offset

frequency offset range
(3 dB degradation in sensitivity)

deviation f = ±4.0 kHz ±2.0 −−kHz
deviation f = ±4.5 kHz ±2.5 −−kHz

∆f

dev

deviation range
(3 dB degradation in sensitivity)

2.5 − 7.0 kHz

t

on

receiver turn-on time data valid after setting RE input

HIGH; note 5

−−5ms

1996 Jan 15 24

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

AC CHARACTERISTICS (930 MHz)

V

P

= 2.05 V; T

amb

=25°C; test circuit Fig.6 (note 1); f

i(RF)

= 930.500 MHz with ±4.0 kHz deviation; 1200 baud pseudo

random bit sequence modulation (t

r

= 250 ± 25 µs measured between 10% and 90% of voltage amplitude) and 20 kHz

channel spacing; unless otherwise specified.

Notes

1. The external oscillator signal V

i(OSC)

has a frequency of f

OSC

= 310.1667 MHz and a level of −15 dBm.

2. The bit error rate BER is measured using the test facility shown in Fig.13. Note that the BER test facility contains a
digital input filter equivalent to the one used in the PCA5000A, PCF5001 and PCD5003 POCSAG decoders.

3. ∆f is the frequency offset between the required signal and the interfering signal.

4. Turn-on time is defined as the time from pin RE going HIGH to the reception of valid data on output pin DO. Turn-on
time is measured using an external oscillator (turn-on time using the internal oscillator is dependent upon the
oscillator circuitry).

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Radio frequency input

P

i(ref)

input sensitivity (P

i(ref)

is the
maximum available power at
the RF input of the test board)

BER ≤3⁄

100

; note 2 −−120.0 −114.0 dBm

V

P

= 1.9 V −−−108.0 dBm

Mixers to demodulator

α

acs

adjacent channel selectivity T

amb

=25°C6069−dB

α

c

co-channel rejection − 510dB

α

sp

spurious immunity 40 60 − dB

α

im

intermodulation immunity 53 60 − dB

α

bl

blocking immunity ∆f >±1 MHz; note 3 65 74 − dB

f

offset

frequency offset range
(3 dB degradation in sensitivity)

deviation f = ±4.0 kHz ±2.0 −−kHz
deviation f = ±4.5 kHz ±2.5 −−kHz

∆f

dev

deviation range
(3 dB degradation in sensitivity)

2.5 − 7.0 kHz

t

on

receiver turn-on time data valid after setting RE input

HIGH; note 4

−−5ms

1996 Jan 15 25

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

TEST INFORMATION
Tuning procedure for AC tests

1. Turn on the signal generator: f

gen=fi(RF)

+ 4 kHz, no modulation, V

i(RF)

= 1 mV (RMS).

2. Measure the IF with a counter connected to test pin TPI. Tune C16 to set the crystal oscillator to achieve fIF= 4 kHz
Change the generator frequency to f

gen=fi(RF)

− 4 kHz and check that fIF is also 4 kHz. For a received input

frequency f

i(RF)

= 172.941 MHz the crystal frequency is f

XTAL

= 57.647 MHz, while for f

i(RF)

= 469.950 MHz the

crystal frequency is f

XTAL

= 78.325 MHz. For a received input frequency f

i(RF)

= 930.500 MHz an external oscillator

signal must be used with f

i(OSC)

= 310.1667 MHz and a level of −15 dBm (for definition of crystal frequency, see

Table 1).

3. Set the signal generator to nominal frequency (f

i(RF)

) and turn on the modulation deviation ±4.0 kHz, 600 Hz square

wave modulation, V

i(RF)

= 1 mV (RMS). Note that the RF signal should be reduced in the following tests, as the

receiver is tuned, to ensure V

o(IF)

= 10 to 50 mV (p-p) on test pins TPI or TPQ.

4. Tune C15 (oscillator output circuit) and C12 (frequency multiplier output) to obtain a peak audio voltage on pin TPI.

5. Tune C3 and C6 (RF input and mixer input) to obtain a peak audio voltage on pin TPI. When testing the mixer input
sensitivity tune C23 instead of C3 and C6 (test circuit Fig.5).

6. Check that the output signal on pin TPQ is within 3 dB in amplitude and at 90° (±20°) relative phase of the signal on
pin TPI.

7. Check that data signal appears on output pin DO and proceed with the AC test.

AC test conditions
Table 5 Definitions for AC test conditions (see Table 6)

SIGNAL DESCRIPTION

Modulated test signal 1

Frequency 172.941, 469.950 or 930.500 MHz
Deviation ±4.0 kHz
Modulation 1200 baud pseudo random bit sequence
Rise time 250 ±25 µs (between 10% and 90% of final value)

Modulated test signal 2

Deviation ±2.4 kHz
Modulation 400 Hz sinewave

Other definitions

f

1

frequency of signal generator 1

f

2

frequency of signal generator 2

f

3

frequency of signal generator 3

∆f

cs

channel spacing (20 kHz)

P

1

maximum available power from signal generator 1 at the test board input

P

2

maximum available power from signal generator 2 at the test board input

P

3

maximum available power from signal generator 3 at the test board input

P

i(ref)

maximum available power at the test board input to give a Bit Error Rate (BER) ≤3⁄

100

for the modulated
test signal 1, in the absence of interfering signals and under the conditions as specified in Chapters
“AC characteristics (173 MHz)”, “AC characteristics (470 MHz)” and “AC characteristics (930 MHz)”

1996 Jan 15 26

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Table 6 AC test conditions (notes 1 and 2)

Notes

1. The tests are executed without load on pins TPI and TPQ.

2. All minimum and maximum values correspond to a bit error rate (BER) ≤3⁄

100

in the wanted signal (P1).

3. The BER measurement is started 5 ms (t

on(max)

) after VRE goes HIGH; BER is then measured for 100 bits

(BER ≤3⁄

100

).

SYMBOL PARAMETER CONDITIONS TEST SIGNALS

α

a

adjacent channel selectivity;
Fig.12(b)

f2=f1±∆f

CS

generator 1: modulated test signal 1 P1=P

i(ref)

+3dB

generator 2: modulated test signal 2 P

2=P1+αa(min)

α

c

co-channel rejection; Fig.12(b) f2=f1±up to 3 kHz

generator 1: modulated test signal 1 P

1=Pi(ref)

+3dB

generator 2: modulated test signal 2 P

2=P1−αc(max)

α

sp

spurious immunity; Fig.12(b) f2= 100 kHz to 2 GHz

generator 1: modulated test signal 1 P

1=Pi(ref)

+3dB

generator 2: modulated test signal 2 P

2=P1+αsp( min)

α

im

intermodulation immunity;
Fig.12(c)

f2=f1±∆fcs; f3=f1±2∆f

cs

generator 1: modulated test signal 1 P1=P

i(ref)

+3dB

generator 2: unmodulated P

2=P1+αim(min)

generator 3: modulated test signal 2 P3=P

2

α

bl

blocking immunity; Fig.12(b) f2=f1±1 MHz

generator 1: modulated test signal 1 P

1=Pi(ref)

+3dB

generator 2: modulated test signal 2 P

2=P1+αbl(min)

f

offset

frequency offset range;
Fig.12(a)

deviation = ±4.0 kHz, f1=f

i(RF)

± 2 kHz (f

offset(min)

)

generator 1: modulated test signal 1 P

1=Pi(ref)

+3dB

∆f

dev

deviation range; Fig.12(a) deviation = ±2.5 to ±7 kHz; (∆f

dev(min)

to ∆f

dev(max)

)

generator 1: modulated test signal 1 P

1=Pi(ref)

+3dB

t

on

receiver turn-on time;
Fig.12(a)

note 3

generator 1: modulated test signal 1 P

1=Pi(ref)

+10dB

1996 Jan 15 27

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Fig.12 Test configurations.

(a) One generator.
(b) Two generators.
(c) Three generators.
(1) See Fig.13.

handbook, full pagewidth

MLC708

GENERATOR 1

R = 50 Ω

s

GENERATOR 1

R = 50 Ω

s

GENERATOR 2

R = 50 Ω

s

GENERATOR 1

R = 50 Ω

s

GENERATOR 2

R = 50 Ω

s

GENERATOR 3

R = 50 Ω

s

50 Ω 2-SIGNAL

POWER

COMBINER

BER TEST

(1)

FACILITY

BER TEST

(1)

FACILITY

BER TEST

(1)

FACILITY

50 Ω 3-SIGNAL

POWER

COMBINER

DEVICE

UNDER TEST

DEVICE

UNDER TEST

DEVICE

UNDER TEST

(a)

(b)

(c)

Fig.13 BER test facility.

handbook, full pagewidth

MLC233

GENERATOR

R = 50 Ω

s

DIGITAL

FILTER

PSEUDO

RANDOM

SEQUENCE

GENERATOR

250 µs

RISE TIME

CLOCK

RECOVERY

PRESET

DELAY

DATA

COMPARATOR

MASTER

CLOCK

recovered clock
retimed

Rx data

to error

counter

DEVICE

UNDER TEST

1996 Jan 15 28

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

PRINTED-CIRCUIT BOARDS

Fig.14 PCB top view for LQFP32; test circuit Figs 1 and 3.

handbook, full pagewidth

MBD562

1996 Jan 15 29

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Fig.15 PCB bottom view for LQFP32; test circuit Figs 1 and 3.

handbook, full pagewidth

MBD561

1996 Jan 15 30

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Fig.16 PCB top view with components for LQFP32; test circuit Fig.3.

VEE= GND; VC =VP.

handbook, full pagewidth

MLC709

TS

BLI

DO

RE

C13

DO TPI TPQ

VIRF

R5

C18

C17

L9

C16

L8

C15

C14

UAA2080H

R1

C6

L2

L3

C4

C10

C11

C9

C7

C8

L5
L4

C19

R3

R2

L6L7

C12

GND

V

XTAL

P

1996 Jan 15 31

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Fig.17 PCB bottom view with components for LQFP32; test circuit Fig.3.

handbook, full pagewidth

MLC235

C5

C1

C3

C2

L1

R4

1996 Jan 15 32

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Fig.18 PCB top view for SO28; test circuit Figs 2 and 4.

handbook, full pagewidth

MBD565

1996 Jan 15 33

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Fig.19 PCB bottom view for SO28; test circuit Figs 2 and 4.

handbook, full pagewidth

MBD567

1996 Jan 15 34

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Fig.20 PCB top view with components for SO28; test circuit Fig.4.

VEE= GND; VCC=VP; BI = BLI; OPS = TS.

handbook, full pagewidth

MBD566

GND

C13

GND

V

P

V

P

OPS BI DO RE

DATA

OUT

R5

C18

C17

C16

C15 C12

L8

L7

C19

XL1

R3

C14

L6

R2

UAA2080T

C11 L4

L5

C9

C10

C7

C8

C4

L3

L2

RF IN

TPQ TPI

1996 Jan 15 35

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Fig.21 PCB bottom view with components for SO28; test circuit Fig.4.

handbook, full pagewidth

MBD568

R4

SHORT

C5

R1

C3

L1

C2

C1

1996 Jan 15 36

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Fig.22 PCB top view with components for LQFP32; test circuit Fig.5.

handbook, full pagewidth

MLC710

TS

BLI

DO

RE

GND

V

C13

DO TPI TPQ

R5

C18

C17

L9

C16

XTAL

L8

C15

C14

UAA2080H

V

i(RF)

C11

C10

C22

C21

L5

L4

C19

R3

R2

L6

L10

L7

C12

C23

P

1996 Jan 15 37

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Fig.23 PCB bottom view with components for LQFP32; test circuit Fig.5.

handbook, full pagewidth

MLC237

C5

R4

1996 Jan 15 38

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Fig.24 PCB top view with components for LQFP32; test circuit Fig.6.

k, full pagewidth

V

i(RF)

MLC711

L10

GND

V

C13

R3

C19

L6

L7

C12

L8

C14

C15

V

i(OSC)

TS
BLI
DO
RE

TPI

TPQ

C1

C2

C3

L1

R1

C6

L2

L3

C4

C8

UAA2080H

C7

L11

C9L4L5

R2

P

1996 Jan 15 39

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Fig.25 PCB bottom view with components for LQFP32; test circuit Fig.6.

handbook, full pagewidth

MLC239

R4

C5

1996 Jan 15 40

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

PACKAGE OUTLINES

UNIT

A

max.

A1A2A3b

p

cE

(1)

eH

E

LLpQZywv θ

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

1.60

0.20

0.05

1.45

1.35

0.25

0.4

0.3

0.18

0.12

7.1

6.9

0.8

9.15

8.85

0.69

0.59

0.9

0.5

7
0

o
o

0.25 0.11.0 0.2

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

0.75

0.45

SOT358 -1

93-06-29
95-12-19

D

(1) (1)(1)

7.1

6.9

H

D

9.15

8.85

E

Z

0.9

0.5

D

b

p

e

θ

E

A

1

A

L

p

Q

detail X

L

(A )

3

B

8

c

D

H

b

p

E

H

A

2

v M

B

D

Z

D

A

Z

E

e

v M

A

X

1

32

25

24 17

16

9

y

pin 1 index

w M

w M

0 2.5 5 mm

scale

LQFP32: plastic low profile quad flat package; 32 leads; body 7 x 7 x 1.4 mm

SOT358-1

1996 Jan 15 41

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

UNIT

A

max.

A

1

A2A

3

b

p

cD

(1)E(1) (1)

eHELLpQ

Z

ywv θ

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

inches

2.65

0.30

0.10

2.45

2.25

0.49

0.36

0.32

0.23

18.1

17.7

7.6

7.4

1.27

10.65

10.00

1.1

1.0

0.9

0.4

8
0

o
o

0.25 0.1

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

1.1

0.4

SOT136-1

X

14

28

w M

θ

A

A

1

A

2

b

p

D

H

E

L

p

Q

detail X

E

Z

c

L

v M

A

e

15

1

(A )

3

A

y

0.25

075E06 MS-013AE

pin 1 index

0.10

0.012

0.004

0.096

0.089

0.019

0.014

0.013

0.009

0.71

0.69

0.30

0.29

0.050

1.4

0.055

0.419

0.394

0.043

0.039

0.035

0.016

0.01

0.25

0.01

0.004

0.043

0.016

0.01

0 5 10 mm

scale

SO28: plastic small outline package; 28 leads; body width 7.5 mm

SOT136-1

95-01-24
97-05-22

1996 Jan 15 42

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

(order code 9398 652 90011).

Reflow soldering

Reflow soldering techniques are suitable for all LQFP and
SO packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

LQFP
Wave soldering is not recommended for LQFP packages.

This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

If wave soldering cannot be avoided, the following
conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)
soldering technique should be used.

• The footprint must be at an angle of 45° to the board

direction and must incorporate solder thieves
downstream and at the side corners.

Even with these conditions, do not consider wave
soldering LQFP packages LQFP48 (SOT313-2),
LQFP64 (SOT314-2) or LQFP80 (SOT315-1).

SO
Wave soldering techniques can be used for all SO

packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• The package footprint must incorporate solder thieves at
the downstream end.

M

ETHOD (LQFP AND SO)

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1996 Jan 15 43

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Semiconductors – a worldwide company

Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428)

BUENOS AIRES, Tel. [phone], Fax. [phone]

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Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands,

Tel. [phone], Fax. [phone]

Brazil: Rua do Rocio 220 - 5

th

floor, Suite 51,
CEP: 04552-903-SÃO PAULO-SP, Brazil,
P.O. Box 7383 (01064-970),
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Colombia: IPRELENSO LTDA, Carrera 21 No. 56-17,

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COPENHAGEN S, Tel. [phone], Fax. [phone]

Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]

France: 4 Rue du Port-aux-Vins, BP317,

92156 SURESNES Cedex,
Tel. [phone], Fax. [phone]

Germany: P.O. Box 10 51 40, 20035 HAMBURG,

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Greece: No. 15, 25th March Street, GR 17778 TAVROS,

Tel. [phone] 911, Fax. [phone]

India: Philips INDIA Ltd, Shivsagar Estate, A Block,

Dr. Annie Besant Rd. Worli, Bombay 400 018
Tel. [phone], Fax. [phone]

Indonesia: Philips House, Jalan H.R. Rasuna Said Kav. 3-4,

P.O. Box 4252, JAKARTA 12950,
Tel. [phone], Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS S.r.l.,

Piazza IV Novembre 3, 20124 MILANO,
Tel. [phone], Fax. [phone]

Japan: Philips Bldg13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong,

Yongsan-ku, SEOUL, Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA,

SELANGOR, Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TX 79905,

Tel. [phone], Fax. [phone]

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]

New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]

Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: Philips Electrical Industries of Pakistan Ltd.,

Exchange Bldg. ST-2/A, Block 9, KDA Scheme 5, Clifton,
KARACHI 75600, Tel. [phone],
Fax. [phone]

Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

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195-215 Main Road Martindale, 2092 JOHANNESBURG,
P.O. Box 7430, Johannesburg 2000,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,

Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla. S-164 85 STOCKHOLM,

Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. [phone], Fax. [phone]

Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West

Road, Sec. 1. Taipeh, Taiwan ROC, P.O. Box 22978,
TAIPEI 100, Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong,
Bangkok 10260, THAILAND,
Tel. [phone], Fax. [phone]

Turkey:Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,

Tel. [phone], Fax. [phone]

Ukraine: Philips UKRAINE, 2A Akademika Koroleva str., Office 165,

252148 KIEV, Tel.[phone], Fax. [phone]

United Kingdom: Philips Semiconductors LTD.,

276 Bath Road, Hayes, MIDDLESEX UB3 5BX,
Tel. [phone], Fax. [phone]

United States:811 East Arques Avenue, SUNNYVALE,

CA 94088-3409, Tel. [phone], Fax. [phone]

Uruguay: Coronel Mora 433, MONTEVIDEO,

Tel. [phone], Fax. [phone]

Internet: http://www.semiconductors.philips.com/ps/
For all other countries apply to: Philips Semiconductors,

International Marketing and Sales, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands,
Telex 35000 phtcnl, Fax. [phone]

SCDS47 © Philips Electronics N.V. 1996

All rights are reserved. Reproduction in whole or in part is prohibited without the
prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation
or contract, is believed to be accurate and reliable and may be changed without
notice. No liability will be accepted by the publisher for any consequence of its
use. Publication thereof does not convey nor imply any license under patent- or
other industrial or intellectual property rights.

Printed in The Netherlands