Datasheet UAA2080U, UAA2080T, UAA2080H Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

UAA2080

Advanced pager receiver

Product specification
Supersedes data of 1995 Nov 27
File under Integrated Circuits, IC03

1996 Jan 15

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

FEATURES

• Wide frequency range: VHF, UHF and 900 MHz bands

• High sensitivity

• High dynamic range

• Electronically adjustable filters on chip

• Suitable for data rates up to 2400 bits/s

• Wide frequency offset and deviation range

• Fully POCSAG compatible FSK receiver

• Power on/off mode selectable by the chip enable input

• Low supply voltage; low power consumption

• High integration level

• Interfaces directly to the PCA5000A, PCF5001 and

PCD5003 POCSAG decoders.

APPLICATIONS

• Wide area paging

• On-site paging

• Telemetry

• RF security systems

• Low bit-rate wireless data links.

GENERAL DESCRIPTION

The UAA2080 is a high-performance low-power radio
receiver circuit primarily intended for VHF, UHF and
900 MHz pager receivers for wide area digital paging
systems, employing direct FM non-return-to-zero (NRZ)
frequency shift keying (FSK).

The receiver design is based on the direct conversion
principle where the input signal is mixed directly down to
the baseband by a local oscillator on the signal frequency.
Two complete signal paths with signals of 90° phase
difference are required to demodulate the signal.
All channel selectivity is provided by the built-in IF filters.
The circuit makes extensive use of on-chip capacitors to
minimize the number of external components.

The UAA2080 was designed to operate together with the
PCA5000A, PCF5001 or PCD5003 POCSAG decoders,
which contain a digital input filter for optimum call success
rate.

ORDERING INFORMATION

TYPE

NUMBER

UAA2080H LQFP32 plastic low profile quad flat package; 32 leads; body 7 × 7 × 1.4 mm SOT358-1
UAA2080T SO28 plastic small outline package; 28 leads; body width 7.5 mm SOT136-1
UAA2080U 28 pads naked die; see Fig.9

NAME DESCRIPTION VERSION

PACKAGE

1996 Jan 15 2

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

P

I

P

I

P(off)

P

i(ref)

P

i(mix)

V

th

T

amb

supply voltage 1.9 2.05 3.5 V
supply current 2.3 2.7 3.2 mA
stand-by current −−3µA
RF input sensitivity BER ≤3⁄

data rate 1200 bits/s; T

f

i(RF)

f

i(RF)

f

i(RF)

mixer input sensitivity BER ≤3⁄

; ±4 kHz deviation;

100

=25°C

amb

= 173 MHz −−126.5 −123.5 dBm
= 470 MHz −−124.5 −121.5 dBm
= 930 MHz −−120.0 −114.0 dBm

; f

100

= 470 MHz;

i(RF)

−−115.0 −110.0 dBm

±4 kHz deviation;

data rate 1200 bits/s; T

detection threshold for battery

amb

=25°C

1.95 2.05 2.15 V

LOW indicator
operating ambient temperature −10 − +70 °C

1996 Jan 15 3

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

BLOCK AND TEST DIAGRAMS (173 MHz)

L5

150

P

V

R3

C19

C13

C14

R7

C15

L827nH

R5

1.5 kΩ

1 nF

1.8

L6

L7

10 µF

1 nF

100 Ω

27 pF

XTAL

C16

kΩ

33 nH

33 nH

13 to

50 pF

C12

R4

TDC

C17

5 to 20 pF

2.2 kΩ

GND3

15 pF

25

2627

28

303132

R247kΩ

24

22

MULTIPLIER

FREQUENCY

P

V

LOW

BATTERY

INDICATOR

CRYSTAL

OSCILLATOR

21

low noise

amplifier Q

ACTIVE

GYRATOR

Q

LIMITER

GND2

20

FILTER

FILTER

DEMO-

ACTIVE

GYRATOR

DULATOR

19

MIXER Q

low noise

FILTER

FILTER

I

LIMITER

18

amplifier I

RF pre-amplifier

UAA2080H

MIXER I

V

BAND GAP

REFERENCE

V

ref

P

nH

C9

C7

C6

8.2 pF

8.2 pF

5 to

20 pF

C4 1 nF

MLC700

C8

8.2 pF

P

V

= 172.941 MHz.

i(RF)

handbook, full pagewidth

L4

nH

150

C11

22 pF

15 16

C10

22 pF

C5 1 nF

13 14

L3

22 nH

L2

GND1

330

22 nH

R1

Ω

12
11

10

L9

C18

1 nF

560

nH

1TS

2

BLI

3

DO

to

4

RE

decoder

1996 Jan 15 4

5

6

TPI

TPQ

IF testpoints

C1

7

8.2 pF

i(RF)

V

8

C3

5 to

20 pF

L1

43

nH

C2

8.2 pF

Fig.1 Block, test and application diagram drawn for LQFP32; f

Pins 9, 17, 23 and 29 are not connected.

1996 Jan 15 5

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

decoder

C18

1 nF

BLI

DO

RE

28

BAND GAP

REFERENCE

V

P

DEMODULATOR

V

L9

560 nH

27 26 25

ref

LIMITER

R5

1.8 kΩ
C16

13 to
50 pF

TS

LIMITER

I

RF pre-amplifier

XTAL

C17

15 pF

CRYSTAL

OSCILLATOR

BATTERY

LOW

INDICATOR

Q

GND3

222324

V

P

GYRATOR

FILTER

GYRATOR

FILTER

C15

L8

27

27

pF

nH

TDC

21

FREQUENCY

MULTIPLIER

UAA2080T
UAA2080U

ACTIVE

FILTER

ACTIVE

FILTER

R7
100 Ω

R 4

2.2 kΩ

1920

C14
1 nF

low noise

amplifier

Q

low noise

amplifier

I

C13
10 µF

R3

1.5 kΩ

L7

33 nHL633 nH

C12

5 to 20 pF

C 19
1 nF

V

47 kΩ

16 151718

P

R2

7

6

330

Ω

C2

8.2 pF

54

R1

GND1

V

P

L3

22 nH

89

L2

22 nH

C4 1 nF

handbook, full pagewidth

C5 1 nF

C6

5 to 20 pF

12 3

TPI TPQ

IF testpoints

C1

8.2 pF
V

i(RF)

C3

5 to 20 pF

L1

43 nH

Fig.2 Block, test and application diagram drawn for SO28 and naked die; f

MIXER I MIXER Q

10 11 12 13 14

10 pF 10 pF

8.2 pF

8.2 pF

C10 C11
C7
C8

= 172.941 MHz.

i(RF)

C9

8.2 pF

L4
150
nH

GND2

L5
150
nH

MLC701

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Table 1 Tolerances of components shown in Figs 1 and 2 (notes 1 and 2)

COMPONENT

TOLERANCE

(%)

REMARK

Inductances

L1 ±5Q
L2, L3, L6, L7 ±20 Q
L4, L5 ±10 Q
L8 ±20 Q
L9 ±10 Q

= 100 at 173 MHz

min

= 50 at 173 MHz; TC = (+25 to +125) × 10−6/K

min

= 30 at 173 MHz; TC = (+25 to +125) × 10−6/K

min

= 30 at 173 MHz; TC = (+25 to +125) × 10−6/K

min

= 30 at 57 MHz; TC = (+25 to +125) × 10−6/K

min

Resistors

R1 to R7 ±2 TC = +50 × 10−6/K

Capacitors

C1, C2, C7, C8, C9, C15 ±5TC=(0±30) × 10−6/K; tan δ≤ 30 × 10−4at 1 MHz
C3, C6, C12 − TC = (−750 ±300) × 10
C4, C5, C14, C18, C19 ±10 TC = (0 ±30) × 10
C10, C11 ±5TC=(0±30) × 10

−6

/K; tan δ≤50 × 10−4at 1 MHz

−6

/K; tan δ≤10 × 10−4at 1 MHz

−6

/K; tan δ≤21 × 10−4at 1 MHz
C13 ±20
C16 − TC = (−1700 ±500) × 10
C17 ±5TC=(0±30) × 10

−6

/K; tan δ≤50 × 10−4at 1 MHz

−6

/K; tan δ≤26 × 10−4at 1 MHz

Notes

1. Recommended crystal: f

= 57.647 MHz (crystal with 8 pF load), 3rd overtone, pullability >2.75 × 10−6/pF

XTAL

(change in frequency between series resonance and resonance with 8 pF series capacitor at 25 °C), dynamic
resistance R1 < 40 Ω, ∆f=±5×10−6 for T

= −10 to +55 °C with 25 °C reference, calibration plus aging tolerance:

amb

−5 × 10−6to +15 × 10−6.

2. This crystal recommendation is based on economic aspects and practical experience. Normally the spreads for R1,
pullability and calibration do not show their worst case limits simultaneously in one crystal. In such a rare event, the
tuning range will be reduced to an insufficient level.

1996 Jan 15 6

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

BLOCK AND TEST DIAGRAMS (470 MHz)

L5

40

ref

P

nH

C9

MLC702

2.7 pF

L4

40

nH

C11

22 pF

= 469.95 MHz.

15 16

C8

C7

C10

22 pF

C6

C5 1 nF

13 14

L3

8 nH

L2

GND1

330

8 nH

R1

Ω

12
11

10

2.7 pF

6 pF

2.5 to

C4 1 nF

2.7 pF

P

V

i(RF)

handbook, full pagewidth

P

V

L6

820 Ω

10 µF

1 nF

C15

L7

1 nF

3 to

nH

XTAL

C16

kΩ

8 nH

10 pF

13 to

8 nH

50 pF

R4

TDC

C17

C12

1.2 kΩ

2.5 to 6 pF
25

2627

28

303132

GND3

15 pF

L8

R5

R3

C19

C13

C14

100

1.8

R247kΩ

22

24

MULTIPLIER

FREQUENCY

P

V

LOW

BATTERY

INDICATOR

CRYSTAL

OSCILLATOR

21

low noise

amplifier Q

ACTIVE

GYRATOR

Q

LIMITER

GND2

20

FILTER

FILTER

DEMO-

ACTIVE

GYRATOR

DULATOR

19

MIXER Q

low noise

FILTER

FILTER

I

LIMITER

18

amplifier I

RF pre-amplifier

UAA2080H

MIXER I

V

BAND GAP

REFERENCE

V

L9

C18

1 nF

560

nH

1TS

2

BLI

3

DO

to

decoder

1996 Jan 15 7

4

RE

5

6

TPI

TPQ

IF testpoints

C1

7

2.7 pF

i(RF)

V

8

C3

6 pF

2.5 to

L1

nH

C2

12.5

2.7 pF

Fig.3 Block, test and application diagram drawn for LQFP32; f

Pins 9, 17, 23 and 29 are not connected.

1996 Jan 15 8

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

decoder

C18
1 nF

BLI

DO

RE

28

BAND GAP

REFERENCE

V

P

DEMODULATOR

V

L9

560 nH

27 26 25

ref

LIMITER

R5

1.8 kΩ
C16

13 to

50 pF

TS

LIMITER

I

RF pre-amplifier

XTAL

C17

15 pF

CRYSTAL

OSCILLATOR

BATTERY

LOW

INDICATOR

Q

GND3

222324

V

P

GYRATOR

FILTER

GYRATOR

FILTER

L8
100

C15

nH

3 to
10 pF

TDC

21

FREQUENCY

MULTIPLIER

UAA2080T
UAA2080U

ACTIVE

FILTER

ACTIVE

FILTER

C14
1 nF

R 4

1.2 kΩ

1920

low noise

amplifier

Q

low noise

amplifier

I

C13
10 µF

R3
820 Ω

L7

8 nHL68 nH

C12

2.5 to 6 pF

C 19
1 nF

V

47 kΩ

16 151718

P

R2

7

6

330

Ω

C2

2.7 pF

54

R1

GND1

V

P

L3

8 nH

89

L2

8 nH

C4 1 nF

handbook, full pagewidth

C5 1 nF

2.5 to 6 pF

12 3

TPI TPQ

IF testpoints

C1

2.7 pF
V

i(RF)

C3

2.5 to 6 pF
L1

12.5 nH

Fig.4 Block, test and application diagram drawn for SO28 and naked die; f

2.7 pF

C6

2.7 pF

MIXER I MIXER Q

10 11 12 13 14

22 pF 22 pF

C10 C11
C7
C8

= 469.95 MHz.

i(RF)

C9

2.7 pF

L4
40
nH

GND2

L5
40
nH

MLC703

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

L5

40

P

V

L6

820 Ω

1 nF

8 nH

C12

L7

8 nH

2.5 to 6 pF
25

R3

C19

R247kΩ

GND2

21

22

24

20

18

19

UAA2080H

MIXER Q

nH

L4

40

nH

C11

22 pF

MLC704

C23

2.5 to 6 pF

L10

12.5 nH

L8

R5

C13

C14

100

1.8

C18

10 µF

1 nF

C15

1 nF

3 to

nH

XTAL

C16

kΩ

10 pF

13 to

L9

50 pF

560

R4

nH

TDC

C17

1.2 kΩ

GND3

15 pF

2627

28

303132

MULTIPLIER

FREQUENCY

P

V

LOW

BATTERY

INDICATOR

CRYSTAL

OSCILLATOR

1TS

low noise

amplifier Q

ACTIVE

GYRATOR

Q

LIMITER

FILTER

FILTER

2

BLI

DEMO-

DULATOR

3

DO

ACTIVE

GYRATOR

4

RE

FILTER

FILTER

LIMITER

5

TPI

low noise

amplifier I

I

6

TPQ

MIXER I

V

BAND GAP

REFERENCE

V

RF pre-amplifier

7

8

ref

P

15 16

C22

C10

C21

22 pF

C5

13 14

12
1110

GND1

i(RF)

V

5.6 pF

1 nF

5.6 pF

P

V

= 469.95 MHz.

i(RF)

handbook, full pagewidth

Fig.5 Mixer input sensitivity test circuit; f

to

1996 Jan 15 9

IF testpoints

decoder

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Table 2 Tolerances of components shown in Figs 3, 4 and 5 (notes 1 and 2)

COMPONENT

TOLERANCE

(%)

REMARK

Inductances

L1, L10 ±5Q
L2, L3, L6, L7 ±20 Q
L4, L5 ±10 Q
L8 ±10 Q
L9 ±10 Q

= 145 at 470 MHz

min

= 50 at 470 MHz; TC = (+25 to +125) × 10−6/K

min

= 40 at 470 MHz; TC = (+25 to +125) × 10−6/K

min

= 30 at 156 MHz; TC = (+25 to +125) × 10−6/K

min

= 40 at 78 MHz; TC = (+25 to +125) × 10−6/K

min

Resistors

R1 to R5 ±2 TC = +50 × 10−6/K

Capacitors

C1, C2, C7, C8, C9 ±5TC=(0±30) × 10−6/K; tan δ≤30 × 10−4 at 1 MHz
C3, C6, C12, C23 − TC = (−750 ±300) × 10
C4, C5, C14, C18 to C22 ±10 TC = (0 ±30) × 10
C10, C11 ±5TC=(0±30) × 10

−6

/K; tan δ≤50 × 10−4at 1 MHz

−6

/K; tan δ≤10 × 10−4 at 1 MHz

−6

/K; tan δ≤21 × 10−4 at 1 MHz
C13 ±20
C16 − TC = (−1700 ±500) × 10
C17 ±5TC=(0±30) × 10

−6

/K; tan δ≤50 × 10−4at 1 MHz

−6

/K; tan δ≤26 × 10−4at 1 MHz

Notes

1. Recommended crystal: f

= 78.325 MHz (crystal with 8 pF load), 3rd overtone, pullability >2.75 × 10−6/pF

XTAL

(change in frequency between series resonance and resonance with 8 pF capacitor at 25 °C), dynamic resistance
R1 < 30 Ω, ∆f=±5×10−6 for T

= −10 to +55 °C with 25 °C reference, calibration plus aging tolerance:

amb

−5 × 10−6to +15 × 10−6.

2. This crystal recommendation is based on economic aspects and practical experience. Normally the spreads for R1,
pullability and calibration do not show their worst case limits simultaneously in one crystal. In such a rare event, the
tuning range will be reduced to an insufficient level.

1996 Jan 15 10

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

BLOCK AND TEST DIAGRAM (930 MHz)

L5

12.5

P

V

L6

R3

330 Ω

3 nH

C12

3 nH

1.7 to 3 pF
25

L7

R247kΩ

GND2

24

21

22

20

18

19

nH

L4

nH

12.5

MLC705

C13

C14

L8

4.7 µF

150

pF

33 nH

C15

C19

150 pF

3.3 pF

i(OSC)

V

R4

TDC

390 Ω

2627

28

303132

GND3

MULTIPLIER

FREQUENCY

P

V

LOW

BATTERY

CRYSTAL

OSCILLATOR

1TS

low noise

amplifier Q

ACTIVE

INDICATOR

GYRATOR

Q

LIMITER

FILTER

FILTER

2

DEMO-

DULATOR

3

ACTIVE

GYRATOR

4

5

MIXER Q

low noise

FILTER

FILTER

I

LIMITER

6

amplifier I

RF pre-amplifier

7

UAA2080H

MIXER I

V

BAND GAP

REFERENCE

V

8

ref

P

C9

1.2 pF

L11

5 nH

15 16

C8

C7

L10

C5

5 nH

150 pF

C6

1.5 pF

3 pF

1.7 to

1.5 pF

= 930.50 MHz.

i(RF)

13 14

L3

L2

12
11

GND1

R1

10

120

3.5 nH

3.5 nH

Ω

C4 150 pF

P

V

handbook, full pagewidth

Fig.6 Test circuit; f

DO

BLI

to

1996 Jan 15 11

RE

decoder

TPI

TPQ

IF testpoints

C1

1.2 pF

i(RF)

V

C3

3 pF

1.7 to

5

L1

nH

C2

1.0 pF

Pins 9, 17, 23 and 29 are not connected.

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Table 3 Tolerances of components shown in Fig.6 (note 1)

COMPONENT

TOLERANCE

(%)

REMARK

Inductances

L1 ±10 Q

= 150 at 930 MHz

typ

L2, L3, L6, L7 − microstrip inductor
L4, L5 ±5Q
L8 ±10 Q
L10, L11 ±10 Q

= 100 at 930 MHz

typ

= 65 at 310 MHz

typ

= 150 at 930 MHz

typ

Resistors

R1 to R4 ±2TC=(0±200) × 10−6/K;

Capacitors

C1, C2, C7, C8, C9, C15 ±5TC=(0±30) × 10−6/K; tan δ≤30 × 10−4at 1 MHz
C3, C6, C12 − TC = (0 ±200) × 10
C4, C5, C14, C19 ±10 TC = (0 ±30) × 10

−6

/K; tan δ≤30 × 10−4at 1 MHz

−6

/K; tan δ≤10 × 10−4at 1 MHz

C13 ±20

Note

1. The external oscillator signal V

has a frequency of f

i(OSC)

= 310.1667 MHz.

OSC

1996 Jan 15 12

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

PINNING (LQFP32)

SYMBOL PIN DESCRIPTION

TS 1 test switch; connection to ground

for normal operation
BLI 2 battery LOW indicator output
DO 3 data output
RE 4 receiver enable input
TPI 5 IF test point; I channel
TPQ 6 IF test point; Q channel
VI1RF 7 pre-amplifier RF input 1
VI2RF 8 pre-amplifier RF input 2
n.c. 9 not connected
RRFA 10 external emitter resistor for

pre-amplifier
GND1 11 ground 1 (0 V)
VO2RF 12 pre-amplifier RF output 2
VO1RF 13 pre-amplifier RF output 1
V

P

14 supply voltage
VI2MI 15 I channel mixer input 2
VI1MI 16 I channel mixer input 1
n.c. 17 not connected
VI1MQ 18 Q channel mixer input 1
VI2MQ 19 Q channel mixer input 2
GND2 20 ground 2 (0 V)
COM 21 gyrator filter resistor; common line
RGYR 22 gyrator filter resistor
n.c. 23 not connected
VO1MUL 24 frequency multiplier output 1
VO2MUL 25 frequency multiplier output 2
RMUL 26 external emitter resistor for

frequency multiplier

TDC 27 DC test point; no external

connection for normal operation
OSC 28 oscillator collector
n.c. 29 not connected
GND3 30 ground 3 (0 V)
OSB 31 oscillator base; crystal input
OSE 32 oscillator emitter

handbook, halfpage

1

TS

2

BLI

3

DO

4

RE

5

TPI

6

TPQ

7

VI1RF

8

VI2RF

OSE
32

OSB
31

GND3

30

n.c.

29

OSC
28

TDC
27

RMUL
26

VO2MUL
25

UAA2080H

9

10

11

12

13

14

15

16

P

VO2RF

VO1RF

V

VI2MI

VI1MI

n.c.

RRFA

GND1

Fig.7 Pin configuration; LQFP32.

24
23
22
21

20
19
18
17

MLC706

VO1MUL

n.c.
RGYR
COM
GND2
VI2MQ
VI1MQ
n.c.

1996 Jan 15 13

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

PINNING (SO28)

SYMBOL PIN DESCRIPTION

TPI 1 IF test point; I channel
TPQ 2 IF test point; Q channel
VI1RF 3 pre-amplifier RF input 1
VI2RF 4 pre-amplifier RF input 2
RRFA 5 external emitter resistor for

pre-amplifier
GND1 6 ground 1 (0 V)
VO2RF 7 pre-amplifier RF output 2
VO1RF 8 pre-amplifier RF output 1
V

P

9 supply voltage
VI2MI 10 I channel mixer input 2
VI1MI 11 I channel mixer input 1
VI1MQ 12 Q channel mixer input 1
VI2MQ 13 Q channel mixer input 2
GND2 14 ground 2 (0 V)
COM 15 gyrator filter resistor; common line
RGYR 16 gyrator filter resistor
VO1MUL 17 frequency multiplier output 1
VO2MUL 18 frequency multiplier output 2
RMUL 19 external emitter resistor for frequency

multiplier

TDC 20 DC test point; no external connection

for normal operation
OSC 21 oscillator collector
GND3 22 ground 3 (0 V)
OSB 23 oscillator base; crystal input
OSE 24 oscillator emitter
TS 25 test switch; connection to ground for

normal operation
BLI 26 battery LOW indicator output
DO 27 data output
RE 28 receiver enable input

VO2RF
VO1RF

VI1MQ
VI2MQ

Fig.8 Pin configuration; SO28.

TPI

TPQ
VI1RF
VI2RF

RRFA
GND1

V

VI2MI
VI1MI

GND2

1
2
3
4
5
6
7

UAA2080T

8
9

P

10
11
12
13

MBB972

28
27
26
25
24
23
22
21

20
19
18
17
16
1514

RE
DO
BLI
TS
OSE
OSB
GND3
OSC
TDC
RMUL
VO2MUL
VO1MUL
RGYR
COM

1996 Jan 15 14

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

CHIP DIMENSIONS AND BONDING PAD LOCATIONS

See Table 4 for bonding pad description and locations for x/y co-ordinates.

handbook, full pagewidth

3.83
mm

25
26

27
28

1
2

3

4

y

0

0

Where:

Pad 124 m x 124 mµµ
Pad not used

Pad 100 m x 100 mµµ
Pad 100 m x 100 m with reference point µµ

24 23 22 21 20 19

UAA2080U

5

6 7 8 9 10 11

4.74 mm

µPad number 1 (diameter 124 m)

18
17

16

15

14
13

12

x

MLC707

Chip area: 18.15 mm2.
Chip thickness: 380 ±20µm.
Drawing not to scale.

Fig.9 Bonding pad locations.

1996 Jan 15 15

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Table 4 Bonding pad centre locations (dimensions in µm)

SYMBOL PAD DESCRIPTION x y

TPI 1 IF test point; I channel −32 1296
TPQ 2 IF test point; Q channel −32 1000
VI1RF 3 pre-amplifier RF input 1 −32 360
VI2RF 4 pre-amplifier RF input 2; note 1 0 0
RRFA 5 external emitter resistor for pre-amplifier 472 0
GND1 6 ground 1 (0 V) 1160 0
VO2RF 7 pre-amplifier RF output 2 1688 0
VO1RF 8 pre-amplifier RF output 1 2232 0
V

P

VI2MI 10 I channel mixer input 2 3608 0
VI1MI 11 I channel mixer input 1 4216 0
VI1MQ 12 Q channel mixer input 1 4216 360
VI2MQ 13 Q channel mixer input 2 4216 960
GND2 14 ground 2 (0 V) 4216 1360
COM 15 gyrator filter resistor; common line 4216 2024
RGYR 16 gyrator filter resistor 4216 2496
VO1MUL 17 frequency multiplier output 1 4216 3136
VO2MUL 18 frequency multiplier output 2 4176 3456
RMUL 19 external emitter resistor for frequency multiplier 3668 3458
TDC 20 DC test point; no external connection for normal operation 2952 3456
OSC 21 oscillator collector 2312 3456
GND3 22 ground 3 (0 V) 1832 3456
OSB 23 oscillator base; crystal input 1328 3456
OSE 24 oscillator emitter 432 3456
TS 25 test switch; connection to ground for normal operation −32 3456
BLI 26 battery LOW indicator output −32 3136
DO 27 data output −32 2512
RE 28 receiver enable input −32 2152

9 supply voltage 2760 0

lower left corner of chip (typical values) −278 −186

Note

1. All x/y co-ordinates are referenced to the centre of pad 4 (VI2RF); see Fig.9.

1996 Jan 15 16

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

INTERNAL CIRCUITS

handbook, full pagewidth

1

2

3

150 kΩ

4

1 kΩ 1 kΩ

5
6

7

8

n.c.

5 kΩ

5 kΩ

9

150 Ω

32 31 30 28 27 26 25

n.c.

V

29

P

8.15 kΩ

UAA2080H

V

P

V

P

14

13

121110

24

V

P

23

n.c.

22

21

V

1615

20

P

19

18
17

n.c.

MGA788

Fig.10 Internal circuits drawn for LQFP32.

1996 Jan 15 17

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

MBB974 - 1

P

V

P

V

14

1312111098765432

UAA2080T

UAA2080U

Ω

8.15

P

V

k

P

V

P

V

handbook, full pagewidth

150Ω

Fig.11 Internal circuits drawn for SO28 and naked die.

Ω

5

k

2728 26 25 24 23 22 21 20 19 18 17 16 15

150

Ω

5

k

kΩ

1

kΩ

1

1

kΩ

1996 Jan 15 18

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

FUNCTIONAL DESCRIPTION

The complete circuit consists of the following functional
blocks as shown in Figs 1 to 6.

Radio frequency amplifier

The RF amplifier is an emitter-coupled pair driving a
balanced cascode stage, which drives an external
balanced tuned circuit. Its bias current is set by an external
300 Ω resistor R1 to typically 770 µA. With this bias
current the optimum source resistance is 1.3 kΩ at VHF
and 1.0 kΩ at UHF. At 930 MHz a higher bias current is
required to achieve optimum gain. A value of 120 Ω is
used for R1, which corresponds with a bias current of
approximately 1.3 mA and an optimum source resistance
of approximately 600 Ω.The capacitors C1 and C2
transform a 50 Ω source resistance to this optimum value.
The output drives a tuned circuit with capacitive divider
(C7, C8 and C9) to provide maximum power transfer to the
phase-splitting network and the mixers.

Mixers

The double balanced mixers consist of common base
input stages and upper switching stages driven from the
frequency multiplier. The 300 Ω input impedance of each
mixer acts together with external components (C10, C11;
L4, L5 respectively) as phase shifter/power splitter to
provide a differential phase shift of 90 degrees between
the I channel and the Q channel. At 930 MHz all external
phase shifter components are inductive (L10, L11; L4, L5).

The resonant circuit at output pin OSC selects the second
harmonic of the oscillator frequency. In other applications
a different multiplication factor may be chosen.

At 930 MHz an external oscillator circuit is required to
provide sufficient local oscillator signal for the frequency
multiplier.

Frequency multiplier

The frequency multiplier is an emitter-coupled pair driving
an external balanced tuned circuit. Its bias current is set by
external resistor R4 to typically 190 µA (173 MHz), 350 µA
(470 MHz) and 1 mA (930 MHz). The oscillator signal is
internally AC coupled to one input of the emitter-coupled
pair while the other input is internally grounded via a
capacitor. The frequency multiplier output signal between
pins VO1MUL and VO2MUL drives the upper switching
stages of the mixers. The bias voltage on pins VO1MUL
and VO2MUL is set by external resistor R3 to allow
sufficient voltage swing at the mixer outputs. The value of
R3 depends on the operating frequency: 1.5 kΩ
(173 MHz), 820 Ω (470 MHz) and 330 Ω (930 MHz).

Low noise amplifiers, active filters and gyrator filters

The low noise amplifiers ensure that the noise of the
following stages does not affect the overall noise figure.
The following active filters before the gyrator filters reduce
the levels of large signals from adjacent channels. Internal
AC couplings block DC offsets from the gyrator filter
inputs.

Oscillator

The oscillator is based on a transistor in common collector
configuration. It is followed by a cascode stage driving a
tuned circuit which provides the signal for the frequency
multiplier. The oscillator bias current (typically 250 µA) is
determined by the 1.8 kΩ external resistor R5.
The oscillator frequency is controlled by an external 3rd
overtone crystal in parallel resonance mode. External
capacitors between base and emitter (C17) and from
emitter to ground (C16) make the oscillator transistor
appear as having a negative resistance for small signals;
this causes the oscillator to start. Inductance L9 connected
in parallel with capacitor C16 to the emitter of the oscillator
transistor prevents oscillation at the fundamental
frequency of the crystal.

1996 Jan 15 19

The gyrator filters implement the transfer function of a 7th
order elliptic filter. Their cut-off frequencies are determined
by the 47 kΩ external resistor R2 between pins RGYR and
COM. The gyrator filter output signals are available on IF
test pins TPI and TPQ.

Limiters

The gyrator filter output signals are amplified in the limiter
amplifiers to obtain IF signals with removed amplitude
information.

Demodulator

The limiter amplifier output signals are fed to the
demodulator. The demodulator output DO is going LOW or
HIGH depending upon which of the input signals has a
phase lead.

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Battery LOW indicator

The battery LOW indicator senses the supply voltage and
sets its output HIGH when the supply voltage is less than
Vth (typically 2.05 V). Low battery warning is available at

Band gap reference

The whole chip can be powered-up and powered-down by
enabling and disabling the band gap reference via the
receiver enable pin RE.

BLI.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
Ground pins GND1, GND2 and GND3 connected together.

SYMBOL PARAMETER MIN. MAX. UNIT

V

P

V

es

supply voltage −0.3 +8.0 V
electrostatic handling (note 1)

pins VI1RF and VI2RF −1500 +2000 V
pin RRFA −500 +2000 V
pins VO1RF and VO2RF −2000 +250 V
pins V

and OSB −500 +500 V

P

pins OSC and OSE −2000 +500 V
other pins −2000 +2000 V

T

stg

T

amb

storage temperature −55 +125 °C
operating ambient temperature −10 +70 °C

Note

1. Equivalent to discharging a 100 pF capacitor via a 1.5 kΩ resistor.

1996 Jan 15 20

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

DC CHARACTERISTICS

= 2.05 V; T

V

P

with crystal at pin OSB disconnected; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

V

P

I

P

I

P(off)

Receiver enable input (pin RE)

V

IH

V

IL

I

IH

V

IL

Battery LOW indicator output (pin BLI)

V

OH

V

OL

V

th

= −10 to +70 °C (typical values at T

amb

=25°C); measurements taken in test circuit Figs 1, 2, 3 or 4

amb

supply voltage 1.9 2.05 3.5 V
supply current VRE= HIGH;

f

= 173 and 470 MHz

i(RF)

= HIGH; f

V

RE

= 930 MHz 2.9 3.4 3.9 mA

i(RF)

2.3 2.7 3.2 mA

stand-by current VRE= LOW −−3µA

HIGH level input voltage 1.4 − V

P

V
LOW level input voltage 0 − 0.3 V
HIGH level input current VIH=VP= 3.5 V −−20 µA
LOW level input current VIL=0V 0 −−1.0 µA

HIGH level output voltage VP< Vth; I
LOW level output voltage VP> Vth; I
voltage threshold for

= −10 µAV

BLI

= +10 µA −−0.5 V

BLI

−0.5 −−V

P

1.95 2.05 2.15 V

battery LOW indicator

Demodulator output (pin DO)

V

OH

V

OL

HIGH level output voltage IDO= −10 µAV
LOW level output voltage IDO= +10 µA −−0.5 V

−0.5 −−V

P

1996 Jan 15 21

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

AC CHARACTERISTICS (173 MHz)

= 2.05 V; T

V

P

random bit sequence modulation (t
channel spacing; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Radio frequency input

P

i(ref)

Mixers to demodulator

α

acs

α

ci

α

c

α

sp

α

im

α

bl

f

offset

∆f

dev

t

on

=25°C; test circuit Figs 1 or 2; f

amb

= 250 ±25 µs measured between 10% and 90% of voltage amplitude) and 20 kHz

r

input sensitivity (P

i(ref)

is the
maximum available power at
the RF input of the test board)

adjacent channel selectivity T

BER ≤3⁄
T
V

T

= 172.941 MHz with ±4.0 kHz deviation; 1200 baud pseudo

i(RF)

; note 1 −−126.5 −123.5 dBm

100

= −10 to +70 °C; note 2 −−−120.5 dBm

amb

= 1.9 V −−−117.5 dBm

P

=25°C6972−dB

amb

= −10 to +70 °C67−−dB

amb

IF filter channel imbalance −−2dB
co-channel rejection − 47dB
spurious immunity 50 60 − dB
intermodulation immunity 55 60 − dB
blocking immunity ∆f >±1 MHz; note 3 78 85 − dB
frequency offset range

(3 dB degradation in sensitivity)
deviation range

deviation f = ±4.0 kHz ±2.0 −−kHz
deviation f = ±4.5 kHz ±2.5 −−kHz

2.5 − 7.0 kHz

(3 dB degradation in sensitivity)
receiver turn-on time data valid after setting RE input

−−5ms

HIGH; note 4

Notes

1. The bit error rate BER is measured using the test facility shown in Fig.13. Note that the BER test facility contains a
digital input filter equivalent to the one used in the PCA5000A, PCF5001 and PCD5003 POCSAG decoders.

2. Capacitor C16 requires re-adjustment to compensate temperature drift.

3. ∆f is the frequency offset between the required signal and the interfering signal.

4. Turn-on time is defined as the time from pin RE going HIGH to the reception of valid data on output pin DO. Turn-on
time is measured using an external oscillator (turn-on time using the internal oscillator is dependent upon the
oscillator circuitry).

1996 Jan 15 22

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

AC CHARACTERISTICS (470 MHz)

= 2.05 V; T

V

P

random bit sequence modulation (t
channel spacing; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Radio frequency input

P

i(ref)

Mixer input

P

i(mix)

Mixers to demodulator

α

acs

α

ci

α

c

α

sp

α

im

α

bl

f

offset

∆f

dev

t

on

=25°C; test circuit Figs 3 or 4; f

amb

= 250 ± 25 µs measured between 10% and 90% of voltage amplitude) and 20 kHz

r

input sensitivity (P
maximum available power at
the RF input of the test board)

i(ref)

is the

BER ≤3⁄
T
V

input sensitivity BER ≤3⁄

adjacent channel selectivity T

T

= 469.950 MHz with ±4.0 kHz deviation; 1200 baud pseudo

i(RF)

; note 1 −−124.5 −121.5 dBm

100

= −10 to +70 °C; note 2 −−−118.5 dBm

amb

= 1.9 V −−−115.5 dBm

P

; note 3 −−115.0 −110.0 dBm

100

=25°C6770−dB

amb

= −10 to +70 °C65−−dB

amb

IF filter channel imbalance −−2dB
co-channel rejection − 47dB
spurious immunity 50 60 − dB
intermodulation immunity 55 60 − dB
blocking immunity ∆f >±1 MHz; note 4 75 82 − dB
frequency offset range

(3 dB degradation in sensitivity)
deviation range

deviation f = ±4.0 kHz ±2.0 −−kHz
deviation f = ±4.5 kHz ±2.5 −−kHz

2.5 − 7.0 kHz

(3 dB degradation in sensitivity)
receiver turn-on time data valid after setting RE input

−−5ms

HIGH; note 5

Notes

1. The bit error rate BER is measured using the test facility shown in Fig.13. Note that the BER test facility contains a
digital input filter equivalent to the one used in the PCA5000A, PCF5001 and PCD5003 POCSAG decoders.

2. Capacitor C16 requires re-adjustment to compensate temperature drift.

3. Test circuit Fig.5. P

is the maximum available power at the input of the test board. The bit error rate BER is

i(mix)

measured using the test facility shown in Fig.13.

4. ∆f is the frequency offset between the required signal and the interfering signal.

5. Turn-on time is defined as the time from pin RE going HIGH to the reception of valid data on output pin DO. Turn-on
time is measured using an external oscillator (turn-on time using the internal oscillator is dependent upon the
oscillator circuitry).

1996 Jan 15 23

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

AC CHARACTERISTICS (930 MHz)

= 2.05 V; T

V

P

random bit sequence modulation (t
channel spacing; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Radio frequency input

P

i(ref)

Mixers to demodulator

α

acs

α

c

α

sp

α

im

α

bl

f

offset

∆f

dev

t

on

=25°C; test circuit Fig.6 (note 1); f

amb

= 250 ± 25 µs measured between 10% and 90% of voltage amplitude) and 20 kHz

r

input sensitivity (P

i(ref)

is the
maximum available power at
the RF input of the test board)

adjacent channel selectivity T

BER ≤3⁄
V

= 1.9 V −−−108.0 dBm

P

amb

= 930.500 MHz with ±4.0 kHz deviation; 1200 baud pseudo

i(RF)

; note 2 −−120.0 −114.0 dBm

100

=25°C6069−dB
co-channel rejection − 510dB
spurious immunity 40 60 − dB
intermodulation immunity 53 60 − dB
blocking immunity ∆f >±1 MHz; note 3 65 74 − dB
frequency offset range

(3 dB degradation in sensitivity)
deviation range

deviation f = ±4.0 kHz ±2.0 −−kHz
deviation f = ±4.5 kHz ±2.5 −−kHz

2.5 − 7.0 kHz

(3 dB degradation in sensitivity)
receiver turn-on time data valid after setting RE input

−−5ms

HIGH; note 4

Notes

1. The external oscillator signal V

has a frequency of f

i(OSC)

= 310.1667 MHz and a level of −15 dBm.

OSC

2. The bit error rate BER is measured using the test facility shown in Fig.13. Note that the BER test facility contains a
digital input filter equivalent to the one used in the PCA5000A, PCF5001 and PCD5003 POCSAG decoders.

3. ∆f is the frequency offset between the required signal and the interfering signal.

4. Turn-on time is defined as the time from pin RE going HIGH to the reception of valid data on output pin DO. Turn-on
time is measured using an external oscillator (turn-on time using the internal oscillator is dependent upon the
oscillator circuitry).

1996 Jan 15 24

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

TEST INFORMATION
Tuning procedure for AC tests

1. Turn on the signal generator: f

gen=fi(RF)

+ 4 kHz, no modulation, V

= 1 mV (RMS).

i(RF)

2. Measure the IF with a counter connected to test pin TPI. Tune C16 to set the crystal oscillator to achieve fIF= 4 kHz
Change the generator frequency to f
frequency f
crystal frequency is f
signal must be used with f

= 172.941 MHz the crystal frequency is f

i(RF)

= 78.325 MHz. For a received input frequency f

XTAL

= 310.1667 MHz and a level of −15 dBm (for definition of crystal frequency, see

i(OSC)

gen=fi(RF)

− 4 kHz and check that fIF is also 4 kHz. For a received input
= 57.647 MHz, while for f

XTAL

i(RF)

= 930.500 MHz an external oscillator

= 469.950 MHz the

i(RF)

Table 1).

3. Set the signal generator to nominal frequency (f
wave modulation, V
receiver is tuned, to ensure V

= 1 mV (RMS). Note that the RF signal should be reduced in the following tests, as the

i(RF)

= 10 to 50 mV (p-p) on test pins TPI or TPQ.

o(IF)

) and turn on the modulation deviation ±4.0 kHz, 600 Hz square

i(RF)

4. Tune C15 (oscillator output circuit) and C12 (frequency multiplier output) to obtain a peak audio voltage on pin TPI.

5. Tune C3 and C6 (RF input and mixer input) to obtain a peak audio voltage on pin TPI. When testing the mixer input
sensitivity tune C23 instead of C3 and C6 (test circuit Fig.5).

6. Check that the output signal on pin TPQ is within 3 dB in amplitude and at 90° (±20°) relative phase of the signal on
pin TPI.

7. Check that data signal appears on output pin DO and proceed with the AC test.

AC test conditions
Table 5 Definitions for AC test conditions (see Table 6)

SIGNAL DESCRIPTION

Modulated test signal 1

Frequency 172.941, 469.950 or 930.500 MHz
Deviation ±4.0 kHz
Modulation 1200 baud pseudo random bit sequence
Rise time 250 ±25 µs (between 10% and 90% of final value)

Modulated test signal 2

Deviation ±2.4 kHz
Modulation 400 Hz sinewave

Other definitions

f
f
f
∆f
P
P
P
P

1
2
3

cs
1
2
3
i(ref)

frequency of signal generator 1
frequency of signal generator 2
frequency of signal generator 3
channel spacing (20 kHz)
maximum available power from signal generator 1 at the test board input
maximum available power from signal generator 2 at the test board input
maximum available power from signal generator 3 at the test board input
maximum available power at the test board input to give a Bit Error Rate (BER) ≤3⁄

test signal 1, in the absence of interfering signals and under the conditions as specified in Chapters
“AC characteristics (173 MHz)”, “AC characteristics (470 MHz)” and “AC characteristics (930 MHz)”

1996 Jan 15 25

for the modulated

100

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

Table 6 AC test conditions (notes 1 and 2)

SYMBOL PARAMETER CONDITIONS TEST SIGNALS

α

α

α

α

α

f

offset

∆f

t

on

a

c

sp

im

bl

dev

adjacent channel selectivity;
Fig.12(b)

co-channel rejection; Fig.12(b) f2=f1±up to 3 kHz

spurious immunity; Fig.12(b) f2= 100 kHz to 2 GHz

intermodulation immunity;
Fig.12(c)

blocking immunity; Fig.12(b) f2=f1±1 MHz

frequency offset range;
Fig.12(a)

deviation range; Fig.12(a) deviation = ±2.5 to ±7 kHz; (∆f

receiver turn-on time;
Fig.12(a)

f2=f1±∆f

CS

generator 1: modulated test signal 1 P1=P
generator 2: modulated test signal 2 P

generator 1: modulated test signal 1 P
generator 2: modulated test signal 2 P

generator 1: modulated test signal 1 P
generator 2: modulated test signal 2 P

f2=f1±∆fcs; f3=f1±2∆f

cs

generator 1: modulated test signal 1 P1=P
generator 2: unmodulated P
generator 3: modulated test signal 2 P3=P

generator 1: modulated test signal 1 P
generator 2: modulated test signal 2 P

deviation = ±4.0 kHz, f1=f

i(RF)

± 2 kHz (f

offset(min)

)

generator 1: modulated test signal 1 P

dev(min)

to ∆f

dev(max)

)

generator 1: modulated test signal 1 P

note 3

generator 1: modulated test signal 1 P

+3dB

i(ref)

2=P1+αa(min)

i(ref)

2

+3dB

+3dB

+3dB

+3dB

+3dB

+3dB

+10dB

1=Pi(ref)
2=P1−αc(max)

1=Pi(ref)
2=P1+αsp( min)

2=P1+αim(min)

1=Pi(ref)
2=P1+αbl(min)

1=Pi(ref)

1=Pi(ref)

1=Pi(ref)

Notes

1. The tests are executed without load on pins TPI and TPQ.

2. All minimum and maximum values correspond to a bit error rate (BER) ≤3⁄

3. The BER measurement is started 5 ms (t
(BER ≤3⁄

100

).

) after VRE goes HIGH; BER is then measured for 100 bits

on(max)

1996 Jan 15 26

in the wanted signal (P1).

100

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

handbook, full pagewidth

(a) One generator.
(b) Two generators.
(c) Three generators.
(1) See Fig.13.

(a)

(b)

(c)

GENERATOR 1

R = 50 Ω

s

GENERATOR 1

R = 50 Ω

s

GENERATOR 2

R = 50 Ω

s

GENERATOR 1

R = 50 Ω

s

GENERATOR 2

R = 50 Ω

s

GENERATOR 3

R = 50 Ω

s

DEVICE

UNDER TEST

50 Ω 2-SIGNAL

POWER

COMBINER

50 Ω 3-SIGNAL

POWER

COMBINER

DEVICE

UNDER TEST

DEVICE

UNDER TEST

Fig.12 Test configurations.

BER TEST

FACILITY

BER TEST

FACILITY

BER TEST

FACILITY

MLC708

(1)

(1)

(1)

handbook, full pagewidth

GENERATOR

R = 50 Ω

s

DEVICE

UNDER TEST

DIGITAL

FILTER

250 µs

RISE TIME

Fig.13 BER test facility.

1996 Jan 15 27

CLOCK

RECOVERY

PRESET

DELAY

PSEUDO

RANDOM

SEQUENCE

GENERATOR

recovered clock
retimed

Rx data

DATA

COMPARATOR

MASTER

CLOCK

MLC233

to error

counter

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

PRINTED-CIRCUIT BOARDS

handbook, full pagewidth

Fig.14 PCB top view for LQFP32; test circuit Figs 1 and 3.

1996 Jan 15 28

MBD562

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

handbook, full pagewidth

Fig.15 PCB bottom view for LQFP32; test circuit Figs 1 and 3.

1996 Jan 15 29

MBD561

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

handbook, full pagewidth

C19

R3

VEE= GND; VC =VP.

TS

BLI

DO

RE

V

GND

L6L7

C14

C16

C12

UAA2080H

L8

C17

L9

R5

C18

P

C15

C13

XTAL

DO TPI TPQ

R2

L5
L4

C11
C10

VIRF

C9

C7

C8

L3

C6

C4

L2

R1

MLC709

Fig.16 PCB top view with components for LQFP32; test circuit Fig.3.

1996 Jan 15 30

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

handbook, full pagewidth

C5

R4

C3

L1

C2

C1

MLC235

Fig.17 PCB bottom view with components for LQFP32; test circuit Fig.3.

1996 Jan 15 31

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

handbook, full pagewidth

Fig.18 PCB top view for SO28; test circuit Figs 2 and 4.

1996 Jan 15 32

MBD565

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

handbook, full pagewidth

Fig.19 PCB bottom view for SO28; test circuit Figs 2 and 4.

1996 Jan 15 33

MBD567

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

handbook, full pagewidth

V

P

GND

OPS BI DO RE

DATA

OUT

RF IN

TPQ TPI

R5

C18

XL1

C19

C17

C16

C15 C12

UAA2080T

L3

C4

L7

L8

C11 L4

L2

C14

C8

R3

C13

L6

R2

L5

C9

C10

C7

GND

V

P

MBD566

VEE= GND; VCC=VP; BI = BLI; OPS = TS.

Fig.20 PCB top view with components for SO28; test circuit Fig.4.

1996 Jan 15 34

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

handbook, full pagewidth

C3

SHORT

R1

L1

C2

C1

R4

C5

Fig.21 PCB bottom view with components for SO28; test circuit Fig.4.

MBD568

1996 Jan 15 35

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

handbook, full pagewidth

C19

R3

V

GND

C12

L8

C17

L9

L6

R2

UAA2080H

L5

L4

L7

C14

C15

P

C13

C16

XTAL

C11

C23

V

C21

i(RF)

L10

C10

C22

R5

C18

TS

BLI

DO

RE

DO TPI TPQ

MLC710

Fig.22 PCB top view with components for LQFP32; test circuit Fig.5.

1996 Jan 15 36

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

handbook, full pagewidth

C5

R4

Fig.23 PCB bottom view with components for LQFP32; test circuit Fig.5.

1996 Jan 15 37

MLC237

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

k, full pagewidth

V

i(OSC)

GND

C13

V

P

R3

C14

C19

C15

C12

L6

L7

L8

TS
BLI
DO
RE
TPI

TPQ

R2

UAA2080H

C1

C2

C8

R1

C9L4L5

L11

L10

C7
L3

C4

L2

C6

L1

C3

Fig.24 PCB top view with components for LQFP32; test circuit Fig.6.

1996 Jan 15 38

V

MLC711

i(RF)

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

handbook, full pagewidth

C5

R4

Fig.25 PCB bottom view with components for LQFP32; test circuit Fig.6.

1996 Jan 15 39

MLC239

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

PACKAGE OUTLINES

LQFP32: plastic low profile quad flat package; 32 leads; body 7 x 7 x 1.4 mm

c

y

X

24 17

25

pin 1 index

32

1

16

Z

E

e

w M

b

p

9

8

A

H

E

E

A

2

A

SOT358-1

Q

(A )

A

1

L

detail X

3

θ

L

p

e

DIMENSIONS (mm are the original dimensions)

mm

OUTLINE
VERSION

SOT358 -1

A

A1A2A3b

max.

0.20

1.60

0.05

1.45

0.25

1.35

IEC JEDEC EIAJ

UNIT

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

w M

b

p

D

H

D

p

0.4

0.3

Z

D

B

v M

0 2.5 5 mm

scale

(1)

(1) (1)(1)

cE

D

0.18

7.1

0.12

6.9

REFERENCES

eH

H

7.1

6.9

0.8

9.15

8.85

1996 Jan 15 40

v M

D

A

B

9.15

8.85

LLpQZywv θ

E

0.69

0.75

0.45

0.59

0.25 0.11.0 0.2

EUROPEAN

PROJECTION

Z

D

0.9

0.9

0.5

0.5

ISSUE DATE

93-06-29
95-12-19

E

o

7

o

0

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

SO28: plastic small outline package; 28 leads; body width 7.5 mm

D

c

y

Z

28

pin 1 index

1

e

15

14

w M

b

p

SOT136-1

E

H

E

Q

A

2

A

1

L

p

L

detail X

(A )

A

X

v M

A

A

3

θ

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

OUTLINE
VERSION

SOT136-1

A

max.

2.65

0.10

A

1

0.30

0.10

0.012

0.004

A2A3b

2.45

0.25

2.25

0.096

0.01

0.089

IEC JEDEC EIAJ

075E06 MS-013AE

p

0.49

0.36

0.019

0.014

0.32

0.23

0.013

0.009

UNIT

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

(1)E(1) (1)

cD

18.1

7.6

7.4

0.30

0.29

1.27

0.050

17.7

0.71

0.69

REFERENCES

1996 Jan 15 41

eHELLpQ

10.65

10.00

0.419

0.394

1.4

0.055

1.1

0.4

0.043

0.016

1.1

1.0

0.043

0.039

PROJECTION

0.25

0.25 0.1

0.01

0.01

EUROPEAN

ywv θ

Z

0.9

0.4

8

0.004

ISSUE DATE

0.035

0.016

95-01-24
97-05-22

0

o
o

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in

“IC Package Databook”

our

Reflow soldering

Reflow soldering techniques are suitable for all LQFP and
SO packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

LQFP
Wave soldering is not recommended for LQFP packages.

This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

(order code 9398 652 90011).

SO
Wave soldering techniques can be used for all SO

packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• The package footprint must incorporate solder thieves at
the downstream end.

M

ETHOD (LQFP AND SO)

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

If wave soldering cannot be avoided, the following
conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)
soldering technique should be used.

• The footprint must be at an angle of 45° to the board

direction and must incorporate solder thieves
downstream and at the side corners.

Even with these conditions, do not consider wave
soldering LQFP packages LQFP48 (SOT313-2),
LQFP64 (SOT314-2) or LQFP80 (SOT315-1).

1996 Jan 15 42

Philips Semiconductors Product specification

Advanced pager receiver UAA2080

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Jan 15 43

Philips Semiconductors – a worldwide company

Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428)

BUENOS AIRES, Tel. [phone], Fax. [phone]

Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]

Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]

Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands,

Tel. [phone], Fax. [phone]

Brazil: Rua do Rocio 220 - 5

CEP: 04552-903-SÃO PAULO-SP, Brazil,
P.O. Box 7383 (01064-970),
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS:

Tel. [phone], Fax. [phone]

Chile: Av. Santa Maria 0760, SANTIAGO,

Tel. [phone], Fax. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: IPRELENSO LTDA, Carrera 21 No. 56-17,

77621 BOGOTA, Tel. [phone],
Fax. [phone]

Denmark: Prags Boulevard 80, PB 1919, DK-2300

COPENHAGEN S, Tel. [phone], Fax. [phone]

Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]

France: 4 Rue du Port-aux-Vins, BP317,

92156 SURESNES Cedex,
Tel. [phone], Fax. [phone]

Germany: P.O. Box 10 51 40, 20035 HAMBURG,

Tel. [phone], Fax. [phone]

Greece: No. 15, 25th March Street, GR 17778 TAVROS,

Tel. [phone] 911, Fax. [phone]

India: Philips INDIA Ltd, Shivsagar Estate, A Block,

Dr. Annie Besant Rd. Worli, Bombay 400 018
Tel. [phone], Fax. [phone]

Indonesia: Philips House, Jalan H.R. Rasuna Said Kav. 3-4,

P.O. Box 4252, JAKARTA 12950,
Tel. [phone], Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS S.r.l.,

Piazza IV Novembre 3, 20124 MILANO,
Tel. [phone], Fax. [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong,

Yongsan-ku, SEOUL, Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA,

SELANGOR, Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TX 79905,

Tel. [phone], Fax. [phone]

th

floor, Suite 51,

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]

New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]

Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: Philips Electrical Industries of Pakistan Ltd.,

Exchange Bldg. ST-2/A, Block 9, KDA Scheme 5, Clifton,
KARACHI 75600, Tel. [phone],
Fax. [phone]

Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Portugal: PHILIPS PORTUGUESA, S.A.,

Rua dr. António Loureiro Borges 5, Arquiparque - Miraflores,
Apartado 300, 2795 LINDA-A-VELHA,
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Tel. [phone], Fax. [phone]

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195-215 Main Road Martindale, 2092 JOHANNESBURG,
P.O. Box 7430, Johannesburg 2000,
Tel. [phone], Fax. [phone]

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Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla. S-164 85 STOCKHOLM,

Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. [phone], Fax. [phone]

Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West

Road, Sec. 1. Taipeh, Taiwan ROC, P.O. Box 22978,
TAIPEI 100, Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong,
Bangkok 10260, THAILAND,
Tel. [phone], Fax. [phone]

Turkey:Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,

Tel. [phone], Fax. [phone]

Ukraine: Philips UKRAINE, 2A Akademika Koroleva str., Office 165,

252148 KIEV, Tel.[phone], Fax. [phone]

United Kingdom: Philips Semiconductors LTD.,

276 Bath Road, Hayes, MIDDLESEX UB3 5BX,
Tel. [phone], Fax. [phone]

United States:811 East Arques Avenue, SUNNYVALE,

CA 94088-3409, Tel. [phone], Fax. [phone]

Uruguay: Coronel Mora 433, MONTEVIDEO,

Tel. [phone], Fax. [phone]

Internet: http://www.semiconductors.philips.com/ps/
For all other countries apply to: Philips Semiconductors,

International Marketing and Sales, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands,
Telex 35000 phtcnl, Fax. [phone]

SCDS47 © Philips Electronics N.V. 1996

All rights are reserved. Reproduction in whole or in part is prohibited without the
prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation
or contract, is believed to be accurate and reliable and may be changed without
notice. No liability will be accepted by the publisher for any consequence of its
use. Publication thereof does not convey nor imply any license under patent- or
other industrial or intellectual property rights.

Printed in The Netherlands