Datasheet UAA2077CM-C1 Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of 1996 Oct 02
File under Integrated Circuits, IC17

1997 Sep 24

INTEGRATED CIRCUITS

UAA2077CM

2 GHz image rejecting front-end

1997 Sep 24 2

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077CM

FEATURES

• Low-noise, wide dynamic range amplifier

• Very low noise figure

• Dual balanced mixer for over 30 dB on-chip image

rejection

• IF I/Q combiner at 188 MHz

• On-chip quadrature network

• Down-conversion mixer for closed-loop transmitters

• Independent TX/RX fast ON/OFF power-down modes

• Very small outline packaging

• Very small application (no image filter).

APPLICATIONS

• High frequency front-end for DCS1800/PCS1900
hand-portable equipment

• Compact digital mobile communication equipment

• TDMA receivers e.g. RF-LANS.

GENERAL DESCRIPTION

UAA2077CM contains both a receiver front-end and a high
frequency transmit mixer intended to be used in mobile
telephones. Designed in an advanced BiCMOS process it
combines high performance with low power consumption
and a high degree of integration, thus reducing external
component costs and total front-end size.

The main advantage of the UAA2077CM is its ability to
provide over 30 dB of image rejection. Consequently, the
image filter between the LNA and the mixer is suppressed.

Image rejection is achieved in the internal architecture by
two RF mixers in quadrature and two all-pass filters in
I and Q IF channels that phase shift the IF by 45° and 135°
respectively. The two phase shifted IFs are recombined
and buffered to furnish the IF output signal.

Signals presented at the RF input at LO + IF frequency are
rejected through this signal processing while signals at
LO − IF frequency can form the IF signal.

The receiver section consists of a low-noise amplifier that
drives a quadrature mixer pair. The IF amplifier has
on-chip 45° and 135° phase shifting and a combining
network for image rejection. The IF driver has differential
open-collector type outputs.

The LO part consists of an internal all-pass type phase
shifter to provide quadrature LO signals to the receive
mixers. The all-pass filters outputs are buffered before
being fed to the receive mixers.

The transmit section consists of a low-noise amplifier, and
a down-conversion mixer. In the transmit mode, an internal
LO buffer is used to drive the transmit IF down-conversion
mixer.

All RF and IF inputs or outputs are balanced.
Pins RXON, TXON and SXON allow to control the different

power-down modes. A synthesizer-on (SX) mode enables
LO buffers independent of the other circuits. When
pin SXON is HIGH, all internal buffers on the LO path of
the circuit are turned on, thus minimizing LO pulling when
remainder of the receive or transmit chain is powered up.
Special care has been taken for fast power-up switching.

QUICK REFERENCE DATA

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

V

CC

supply voltage 3.6 3.75 5.3 V

I

CC(RX)

receive supply current 27.5 36 44.5 mA

I

CC(TX)

transmit supply current 11 14 17.5 mA

I

CC(PD)

supply current in power-down −−50 µA

T

amb

operating ambient temperature −30 +25 +75 °C

1997 Sep 24 3

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077CM

ORDERING INFORMATION

BLOCK DIAGRAM

TYPE

NUMBER

PACKAGE

NAME DESCRIPTION VERSION

UAA2077CM SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1

Fig.1 Block diagram.

handbook, full pagewidth

MGD285

LNA

MIXER

IF

COMBINER

low-noise

amplifier

5

3

15

16

6

18

19

20

17

9

11314 2

TXINATXINBLOINB

MIXER

LOINA

4 7

IFA

IFB

TXOA
TXOB

n.c. n.c. SXON

10

SBS

12

+45

o

+135

o

RXON

11

TXON

QUADRATURE

PHASE

SHIFTER

RFINA
RFINB

8

LNAGND

LOGND

V

CCLNA

V

CCLO

UAA2077CM

RECEIVE SECTION

TRANSMIT SECTION

LOCAL OSCILLATOR

SECTION

1997 Sep 24 4

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077CM

PINNING

SYMBOL PIN DESCRIPTION

TXINA 1 transmit mixer input A (balanced)
TXINB 2 transmit mixer input B (balanced)
V

CCLNA

3 supply voltage for LNA, IF parts

and TX mixer
n.c. 4 not connected
RFINA 5 RF input A (balanced)
RFINB 6 RF input B (balanced)
n.c. 7 not connected
LNAGND 8 ground for LNA, IF parts and TX

mixer
SXON 9 SX mode enable (see Table 1)
SBS 10 sideband selection (should be

grounded for f

LO<fRF

)
TXON 11 TX mode enable (see Table 1)
RXON 12 RX mode enable (see Table 1)
LOINB 13 LO input B (balanced)
LOINA 14 LO input A (balanced)
V

CCLO

15 supply voltage for LO parts
LOGND 16 ground for LO parts
IFA 17 IF output A (balanced)
IFB 18 IF output B (balanced)
TXOA 19 transmit mixer IF output A

(balanced)

TXOB 20 transmit mixer IF output B

(balanced)

Fig.2 Pin configuration.

handbook, halfpage

UAA2077CM

MGD286

1
2
3
4
5
6
7
8
9

10

TXINA
TXINB

V

CCLNA

SBS

n.c.
RFINA
RFINB

n.c.

LNAGND

SXON

TXOB
TXOA
IFB

TXON

IFA
LOGND
V

CCLO

LOINA
LOINB
RXON

20
19
18
17
16
15
14
13
12
11

1997 Sep 24 5

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077CM

FUNCTIONAL DESCRIPTION
Receive section

The circuit contains a low-noise amplifier followed by two
high dynamic range mixers. These mixers are of the
Gilbert-cell type, the whole internal architecture is fully
differential.

The local oscillator, shifted in phase to 45° and 135°,
mixes the amplified RF to create I and Q channels.
The two I and Q channels are buffered, phase shifted by
45° and 135° respectively, amplified and recombined
internally to realize the image rejection.

Pin SBS allows sideband selection:

• f

LO>fRF

(SBS = 1)

• fLO<fRF (SBS = 0).
Where fRF is the frequency of the wanted signal.

Balanced signal interfaces are used for minimizing
crosstalk due to package parasitics.

The IF output is differential and of the open-collector type.
Typical application will load the output with a 680 Ω
resistor load at each IF output, plus a differential 1 kΩ load
made of the input impedance of the IF filter or the input
impedance of the matching network for the IF filter.
The power gain refers to the available power on this 1 kΩ
load. The path to V

CC

for the DC current should be
achieved via tuning inductors. The output voltage is limited
to VCC+3Vbe or 3 diode forward voltage drops.

Fast switching, ON/OFF, of the receive section is
controlled by the hardware input RXON.

Fig.3 Block diagram, receive section.

handbook, full pagewidth

MGD754

LNA

IF

COMBINER

IF

amplifier

IF

amplifier

MIXER

MIXER

RXON

LOIN

IFA

IFB

RFINA
RFINB

SBS

LNAGND

V

CCLNA

+45

o

+135

o

1997 Sep 24 6

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077CM

Local oscillator section

The Local Oscillator (LO) input directly drives the two
internal all-pass networks to provide quadrature LO to the
receive mixers.

A synthesizer-ON mode (SX mode) is used to power-up all
LO input buffers, thus minimizing the pulling effect on the
external VCO when entering receive or transmit mode.
This mode is active when SXON = 1.

Transmit mixer

This mixer is used for down-conversion to the transmit IF.
Its inputs are coupled to the transmit RF which is

down-converted to a modulated transmit IF frequency,
phase locked with the baseband modulation.

The IF outputs are HIGH impedance (open-collector
type).Typical application will load the output with a 560 Ω
resistor load, connected to V

CC

for DC path, at each TX
output, plus a differential 1 kΩ made of the input
impedance of the matching network for the following TX
part. The mixer can also be used for frequency
up-conversion.

Fast switching, ON/OFF, of the transmit section is
controlled by the hardware input TXON.

Fig.4 Block diagram, LO section.

handbook, halfpage

MGD287

LOINB

to TX

to RX

LOINA

QUAD

LOGND

V

CCLO

SXON

Fig.5 Block diagram, transmit mixer.

handbook, halfpage

MGD153

TXINATXINB

TXON

LOIN

TX MIXER

TXOA
TXOB

Table 1 Control of power status

EXTERNAL PIN LEVEL

CIRCUIT MODE OF OPERATION

TXON RXON SXON

LOW LOW LOW power-down mode
LOW HIGH LOW RX mode: receive section and LO buffers to RX on

HIGH LOW LOW TX mode: transmit section and LO buffers to TX on

LOW LOW HIGH SX mode: complete LO section on

LOW HIGH HIGH SRX mode: receive section on and SX mode active
HIGH LOW HIGH STX mode: transmit section on and SX mode active
HIGH HIGH X receive section and transmit section on; specification not guaranteed

1997 Sep 24 7

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077CM

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

HANDLING

All pins withstand 1500 V ESD test in accordance with

“MIL-STD-883C class 1 (method 3015.5)”

.

SYMBOL PARAMETER MIN. MAX. UNIT

V

CC

supply voltage − 9V

∆GND difference in ground supply voltage applied between LOGND and

LNAGND

− 0.6 V

P

i(max)

maximum power input − +20 dBm

T

j(max)

maximum operating junction temperature − +150 °C

P

dis(max)

maximum power dissipation in quiet air − 250 mW

T

stg

storage temperature −65 +150 °C

SYMBOL PARAMETER VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air 120 K/W

1997 Sep 24 8

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077CM

DC CHARACTERISTICS

VCC= 3.75 V; T

amb

=25°C; unless otherwise specified.

Note

1. The referenced inputs should be connected to a valid CMOS input level.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Pins: V

CCLNA

and V

CCLO

V

CC

supply voltage over full temperature range 3.6 3.75 5.3 V

I

CC(RX)

supply current in RX mode 27.5 36 44.5 mA

I

CC(TX)

supply current in TX mode 11 14 17.5 mA

I

CC(PD)

supply current in power-down mode −−50 µA

I

CC(SX)

supply current in SX mode 6.5 8.5 10.5 mA

I

CC(SRX)

supply current in SRX mode 29.5 38.5 47.5 mA

I

CC(STX)

supply current in STX mode 15 19.5 24 mA

Pins: RXON, TXON, SXON and SBS

V

th

CMOS threshold voltage note 1 − 1.25 − V

V

IH

HIGH level input voltage 0.7V

CC

− V

CC

V

V

IL

LOW level input voltage −0.3 − +0.8 V

I

IH

HIGH level static input current pins at VCC− 0.4 V −1 − +1 µA

I

IL

LOW level static input current pins at 0.4 V −1 − +1 µA

Pins: RFINA and RFINB

V

I

DC input voltage level receive section on 1.8 2.0 2.2 V

Pins: IFA and IFB

I

O

DC output current receive section on 2.3 3.0 3.8 mA

Pins: TXINA and TXINB

V

I

DC input voltage level transmit section on 1.9 2.15 2.4 V

Pins: TXOA and TXOB

I

O

DC output current transmit section on 0.8 1.0 1.2 mA

Pins: LOINA and LOINB

V

LOIN

DC input voltage level RXON, TXON or SXON HIGH 2.6 2.9 3.2 V

1997 Sep 24 9

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077CM

AC CHARACTERISTICS

V

CC

= 3.75 V; T

amb

= −30 to +75 °C; f

oRX

= 188 MHz; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Receive section (receive section enabled)

R

iRX

RF input resistance (real part of
the parallel input impedance)

balanced; at 1960 MHz − 60 −Ω

C

iRX

RF input capacitance
(imaginary part of the parallel
input impedance)

balanced; at 1960 MHz − 0.8 − pF

f

iRX

RF input frequency 1805 − 1990 MHz

RL

iRX

return loss on matched RF input balanced; note 1 15 20 − dB

G

CPRX

conversion power gain differential RF inputs to dif ferential

IF outputs loaded to 1 kΩ
differential

19 22 25 dB

G

rip

gain ripple as a function of RF
frequency

within 100 MHz bandwidth; note 2 − 0.2 0.5 dB

∆G/T gain variation with temperature note 2 −10 −15 −20 mdB/K
CP1

RX

1 dB compression point dif ferential RF inputs to dif ferential

IF outputs; note 1

−25.5 −24 − dB

DES desensitisation interferer frequency offset: 3 MHz;

P

in

= −26 dBm; interferer
frequency offset: 20 MHz,
Pin= −23 dBm differential RF
inputs to differential IF outputs;
note 1

−−5dB

IP2D

RX

half IF spurious attenuation for

−52 dBm input power
(fRF=fLO+ 0.5 × fIF)

differential RF inputs to differential
IF outputs; note 2

37 −− dB

IP3

RX

3rd order intercept point differential RF inputs to differential

IF outputs; note 2

−21.5 −17 − dBm

NF

RX

overall noise figure differential RF inputs to differential

IF outputs

T

amb

=25°C; DCS frequency

range; note 3

− 3.8 − dB

T

amb

=25°C; PCS frequency

range; notes 2 and 3

− 4.0 4.4 dB

T

amb

= −30 to +65 °C; PCS

frequency range; notes 2 and 3

−−5.0 dB

Z

LRX

typical application IF output load
impedance

balanced − 1000 −Ω

RL

oRX

return loss on matched IF output balanced; note 1 15 20 − dB

f

oRX

IF frequency range − 188 − MHz

IR rejection of image frequency f

RF>fLO

; fRF is the frequency of

the wanted signal

30 38 − dB

1997 Sep 24 10

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077CM

Notes

1. Measured and guaranteed only on UAA2077CM PCS demonstration board at T

amb

=25°C.

2. Measured and guaranteed only on UAA2077CM PCS demonstration board.

3. This value includes printed-circuit board and balun losses.

Local oscillator section (receive section enabled)

f

iLO

LO input frequency 1617 − 1802 MHz

R

iLO

LO input resistance (real part of
the parallel input impedance)

balanced; at 1770 MHz − 90 −Ω

C

iLO

LO input inductance (imaginary
part of the parallel input
impedance)

balanced; at 1770 MHz − 5 − nH

RL

iLO

return loss on matched input
(including standby mode)

note 1 10 15 − dB

∆RL

iLO

return loss variation between
SX, SRX and STX modes

linear S11 variation; note 1 − 20 − mU

P

iLO

LO input power level −10 −6 0 dBm

RI

LO

reverse isolation LOIN to RFIN at LO frequency;

note 2

40 −− dB

Transmit section (transmit section enabled)

Z

LTX

TX IF typical load impedance balanced − 500 −Ω

RL

oTX

return loss on matched
transmitter IF output

note 1 11 15 − dB

R

iTX

TX RF input resistance
(real part of the parallel input
impedance)

balanced; at 1880 MHz − 60 −Ω

C

iTX

TX RF input capacitance
(imaginary part of the parallel
input impedance)

balanced; at 1880 MHz − 1 − pF

f

iTX

TX mixer input frequency 1600 − 2000 MHz

RL

iTX

return loss on matched TX input note 1 10 15 − dB

G

CPTX

conversion power gain differential transmitter inputs to

differential transmitter IF outputs
loaded with 500 Ω differential

6 9 12 dB

f

oTX

TX output frequency 50 − 400 MHz

CP1

TX

1 dB input compression point note 1 −25 −22 − dBm

IP2

TX

2nd order intercept point note 2 − +22 − dBm

IP3

TX

3rd order intercept point note 2 −20 −16 − dBm

NF

TX

noise figure double sideband; notes 2 and 3 − 59 dB

I

TX

isolation LOIN to TXIN; note 2 40 −− dB

RI

TX

reverse isolation TXIN to LOIN; note 2 38 −− dB

Timing

t

stu

start-up time of each block 1 5 20 µs

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1997 Sep 24 11

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077CM

INTERNAL PIN CONFIGURATION

PIN SYMBOL

DC

VOLTAGE

(V)

EQUIVALENT CIRCUIT

1 TXINA 2.15

2 TXINB 2.15

5 RFINA 2.0

6 RFINB 2.0

3V

CCLNA

3.75
8 LNAGND 0
9 SXON

10 SBS

11 TXON

12 RXON

13 LOINB 2.9

14 LOINA 2.9

15 V

CCLO

3.75

16 LOGND 0

MGL205

V

CC

GND

2, 61, 5

MGL204

V

CC

GND

9, 10, 11, 12

MGL206

V

CC

GND

13 14

1997 Sep 24 12

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077CM

17 IFA

18 IFB

19 TXOA

20 TXOB

PIN SYMBOL

DC

VOLTAGE

(V)

EQUIVALENT CIRCUIT

MGL207

17 18

V

CC

GND

GND

MGL208

19

20

V

CC

GND

1997 Sep 24 13

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077CM

APPLICATION INFORMATION

handbook, full pagewidth

MGD288

R6

680 Ω

82

nH

L11

82

nH

L12

3.75 V

R7

680 Ω

5.6 pF

C22

82 pF

C23

5.6 pF

8.2 pF

8.2 pF

C24

IFA

IFB

56 nH

L13

56 nHL14

C25

12 pF

C2612 pF

IF

188 MHz

R1

L3

180

nH

L5

120

nH

L2

180

nH

3.75 V

R2

C4

C11

C10

L4 120 nH

C13

C1212 pF

120 pF

120 pF

22 pF

22 pF

TXOUT

93 MHz

UAA2077CM

201

192

183

174

165

156

147

138

129

1110

C27

8.2 pF

C28

1 nF

3.75 V

C19

1.5 pF

1.5 pF

C29

C21

1.5 pF

L9

4.7 nH 4.7 nH

C20

LOIN

1742 to 1817 MHz

L10

C9

8.2

pF

2

1

2

1

R5

560

kΩ

RXON

3.75 V

C7

8.2

pF

R3

560

kΩ

560

kΩ

TXON

C8

8.2

pF

2

1

R4

560

kΩ

SXON

SBS

L1

C14

C2

4.7 nH

1.2 pF

1.2 pF

RFIN

1930 to

1990 MHz

L6 4.7 nH

C1 8.2 pF

8.2 pF

8.2

pF

C3

L15

8.2 nH

C6

8.2 pF

C5

82 pF

3.75 V

L7 4.7 nH

C15 1.8 pF

C16 1.8 pF

TXIN

1850 to

1910 MHz

L8 4.7 nH

C18

8.2 pF

C17

8.2 pF

560 Ω

560 Ω

Fig.6 Application diagram.

Figure 6 illustrates the electrical diagram of the UAA2077CM Philips demonstration board for PCS1900 applications.

For measurement purposes all matching is to 50 Ω. Different values will be used in a real application.

1997 Sep 24 14

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077CM

PACKAGE OUTLINE

UNIT A1A

2

A3b

p

cD

(1)E(1)

(1)

eHELLpQZywv θ

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

0.1501.4

1.2

0.32

0.20

0.20

0.13

6.6

6.4

4.5

4.3

0.65 1.0 0.2

6.6

6.2

0.65

0.45

0.48

0.18

10

0

o

o

0.13 0.1

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

0.75

0.45

SOT266-1

90-04-05
95-02-25

w M

θ

A

A

1

A

2

b

p

D

H

E

L

p

Q

detail X

E

Z

e

c

L

v M

A

X

(A )

3

A

y

0.25

110

20

11

pin 1 index

0 2.5 5 mm

scale

SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm

SOT266-1

A

max.

1.5

1997 Sep 24 15

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077CM

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

(order code 9398 652 90011).

Reflow soldering

Reflow soldering techniques are suitable for all SSOP
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

If wave soldering cannot be avoided, the following
conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)
soldering technique should be used.

• The longitudinal axis of the package footprint must

be parallel to the solder flow and must incorporate
solder thieves at the downstream end.

Even with these conditions, only consider wave
soldering SSOP packages that have a body width of

4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1997 Sep 24 16

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077CM

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

1997 Sep 24 17

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077CM

NOTES

1997 Sep 24 18

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077CM

NOTES

1997 Sep 24 19

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077CM

NOTES

Internet: http://www.semiconductors.philips.com

Philips Semiconductors – a worldwide company

© Philips Electronics N.V. 1997 SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Netherlands: Postbus 90050, 5600PB EINDHOVEN, Bldg. VB,
Tel. [phone], Fax. [phone]

New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. [phone], Fax. [phone]

Norway: Box 1, Manglerud 0612, OSLO,
Tel. [phone], Fax. [phone]

Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax. [phone]

South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone], Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. [phone],

Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. [phone], Fax. [phone]

Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax. [phone]
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. [phone], Fax. [phone]
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. [phone], Fax. [phone]
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. [phone], Fax. [phone]
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. [phone], Fax. [phone]
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. [phone], Fax. [phone]
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. [phone]
Middle East: see Italy

Printed in The Netherlands 437027/1200/02/pp20 Date of release: 1997 Sep 24 Document order number: 9397 750 02731