Datasheet UAA2077BM Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

UAA2077BM

2 GHz image rejecting front-end

Product specification
Supersedes data of July 1995
File under Integrated Circuits, IC03

1995 Dec 13

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077BM

FEATURES

• Low-noise, wide dynamic range amplifier

• Very low noise figure

• Dual balanced mixer for over 25 dB on-chip image

rejection

• IF I/Q combiner at 188 MHz

• On-chip quadrature network

• Down-conversion mixer for closed-loop transmitters

• Independent TX/RX fast ON/OFF power-down modes

• Very small outline packaging

• Very small application (no image filter).

APPLICATIONS

• 1800 MHz front-end for DCS1800 hand-portable
equipment

• Compact digital mobile communication equipment

• TDMA receivers e.g. PCS and RF-LANS.

GENERAL DESCRIPTION

UAA2077BM contains both a receiver front-end and a high
frequency transmit mixer intended to be used in mobile
telephones. Designed in an advanced BiCMOS process it
combines high performance with low power consumption
and a high degree of integration, thus reducing external
component costs and total front-end size.

The main advantage of the UAA2077BM is its ability to
provide over 25 dB of image rejection. Consequently, the
image filter between the LNA and the mixer is suppressed.

Image rejection is achieved in the internal architecture by
two RF mixers in quadrature and two all-pass filters in
I and Q IF channels that phase shift the IF by 45° and 135°
respectively. The two phase shifted IFs are recombined
and buffered to furnish the IF output signal.

For instance, signals presented at the RF input at the
LO + IF frequency are rejected through this signal
processing while signals at the LO − IF frequency can form
the IF signal. An internal switch enables the upper or lower
image frequency to be rejected.

The receiver section consists of a low-noise amplifier that
drives a quadrature mixer pair. The IF amplifier has
on-chip 45° and 135° phase shifting and a combining
network for image rejection. The IF driver has differential
open-collector type outputs.

The LO part consists of an internal all-pass type phase
shifter to provide quadrature LO signals to the receive
mixers. The centre frequency of the phase shifter is
adjustable for maximum image rejection in a given band.
The all-pass filters outputs are buffered before being fed to
the receive mixers.

The transmit section consists of a low-noise amplifier and
a down-conversion mixer. In the transmit mode an internal
LO buffer is used to drive the transmit IF down-conversion
mixer.

All RF and IF inputs or outputs are balanced.
Pins RXON, TXON and SXON enable a selection to be

made of whether to reject the upper or lower image
frequency and control of the different power-down modes.
Special care has been taken for fast power-up switching.

QUICK REFERENCE DATA

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

V

CC

I

CC(RX)

I

CC(TX)

I

CC(PD)

T

amb

supply voltage 3.6 4.0 5.3 V
receive supply current 21.5 26.5 33.5 mA
transmit supply current 10.5 13.5 18 mA
supply current in power-down −−50 µA
operating ambient temperature −30 +25 +85 °C

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

UAA2077BM SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1

1995 Dec 13 2

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077BM

BLOCK DIAGRAM

handbook, full pagewidth

V

CCLNA

RFINA
RFINB

LNAGND

V

CCLO

V

QUADLO

LOGND

n.c. n.c. SXON

4 7

3

5
6

8

UAA2077BM

LNA

low-noise

amplifier

MIXER

TXON

RXON

11

12

+45

+135

o

o

RECEIVE SECTION

15

10

16

QUADRATURE

PHASE

SHIFTER

TRANSMIT SECTION

LOCAL OSCILLATOR

SECTION

LOINA

COMBINER

MIXER

11314 2

TXINATXINBLOINB

9

17

IFA

IF

18

IFB

19

TXOA
TXOB

20

MGD154

Fig.1 Block diagram.

1995 Dec 13 3

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077BM

PINNING

SYMBOL PIN DESCRIPTION

TXINA 1 transmit mixer input A (balanced)
TXINB 2 transmit mixer input B (balanced)
V

CCLNA

n.c. 4 not connected
RFINA 5 RF input A (balanced)
RFINB 6 RF input B (balanced)
n.c. 7 not connected
LNAGND 8 ground for LNA, IF parts and TX

SXON 9 SX mode enable (see Table 1)
V

QUADLO

TXON 11 TX mode enable (see Table 1)
RXON 12 RX mode enable (see Table 1)
LOINB 13 LO input B (balanced)
LOINA 14 LO input A (balanced)
V

CCLO

LOGND 16 ground for LO parts
IFA 17 IF output A (balanced)
IFB 18 IF output B (balanced)
TXOA 19 transmit mixer IF output A

TXOB 20 transmit mixer IF output B

3 supply voltage for LNA, IF parts

and TX mixer

mixer

10 input voltage for LO quadrature

trimming

15 supply voltage for LO parts

(balanced)

(balanced)

handbook, halfpage

LNAGND

V

QUADLO

1

TXINA

2

TXINB

n.c.
RFINA
RFINB

n.c.

SXON

3
4
5

UAA2077BM

6
7
8
9

10

V

CCLNA

Fig.2 Pin configuration.

MGD155

20
19
18
17
16
15
14
13
12
11

TXOB
TXOA
IFB
IFA
LOGND
V

CCLO

LOINA
LOINB
RXON
TXON

1995 Dec 13 4

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077BM

FUNCTIONAL DESCRIPTION
Receive section

The circuit contains a low-noise amplifier followed by two
high dynamic range mixers. These mixers are of the
Gilbert-cell type, the whole internal architecture is fully
differential.

The local oscillator, shifted in phase to 45° and 135°,
mixes the amplified RF to create I and Q channels.
The two I and Q channels are buffered, phase shifted by
45° and 135° respectively, amplified and recombined
internally to realize the image rejection.

Balanced signal interfaces are used for minimizing
crosstalk due to package parasitics.

handbook, full pagewidth

V

CCLNA

MIXER

IF

amplifier

The IF output is differential and of the open-collector type.
Typical application will load the output with a differential
1kΩ load; for example, a 1 kΩ resistor load at each IF
output, plus a differential 2 kΩ load consisting of the input
impedance of the IF filter or the input impedance of the
matching network for the IF filter. The power gain refers to
the available power on this 2 kΩ load. The path to V

CC

for
the DC current should be achieved via tuning inductors.
The output voltage is limited to VCC+3Vbe or 3 diode
forward voltage drops.

Fast switching, ON/OFF, of the receive section is
controlled by the hardware input RXON.

o

+45

RFINA
RFINB

LNAGND

LNA

MIXER

IF

amplifier

LOIN

+135

o

RXON

Fig.3 Block diagram, receive section.

IFA

IF

COMBINER

IFB

MGD157

1995 Dec 13 5

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077BM

Local oscillator section

The local oscillator (LO) input directly drives the two
internal all-pass networks to provide quadrature LO to the
receive mixers.

The centre frequency of the receive band is adjustable by
the voltage on pin V
connecting a resistor between V

. This should be achieved by

QUADLO

and VCC. Over

QUADLO

25 dB of image rejection can be obtained by an optimum
resistor value.

A synthesizer-ON mode (SX mode) is used to power-up all
LO input buffers, thus minimizing the pulling effect on the
external VCO when entering the receive or transmit mode.
This mode is active when SXON = 1.

handbook, halfpage

V

CCLO

V

QUADLO

to RX

QUAD

Transmit mixer

This mixer is used for down-conversion to the transmit IF.
Its inputs are coupled to the transmit RF which is
down-converted to a modulated transmit IF frequency,
phase-locked with the baseband modulation.

The IF outputs are high-impedance (open-collector type).
Typical application will load the output with a differential
500 Ω load; for example, a 500 Ω resistor load, connected
to VCCfor DC path, at each TX output, plus a differential
1kΩ consisting of the input impedance of the matching
network for the following TX part. The mixer can also be
used for frequency up-conversion.

Fast switching ON/OFF, of the transmit section is
controlled by the hardware input TXON.

handbook, halfpage

LOIN

TX MIXER

TXOA
TXOB

LOGND

LOINB

LOINA

Fig.4 Block diagram, LO section.

to TX

MGD156

TXON

TXINATXINB

Fig.5 Block diagram, transmit mixer.

Table 1 Control of power status

EXTERNAL PIN LEVEL

CIRCUIT MODE OF OPERATION

TXON RXON SXON

LOW LOW LOW power-down mode
LOW HIGH LOW RX mode, fLO<fRF: receive section and LO buffers to RX on

HIGH LOW LOW TX mode: transmit section and LO buffers to TX on

LOW LOW HIGH SX mode: complete LO section on
LOW HIGH HIGH SRX mode, f

LO<fRF

: receive section on and SX mode active
HIGH LOW HIGH STX mode: transmit section on and SX mode active
HIGH HIGH LOW RX mode, f
HIGH HIGH HIGH SRX mode, f

LO>fRF

: receive section and LO buffers to RX on

LO>fRF

: receive section on and SX mode active

MGD153

1995 Dec 13 6

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077BM

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

CC

∆GND difference in ground supply voltage applied between LOGND and LNAGND − 0.6 V
P

i(max)

T

j(max)

P

dis(max)

T

stg

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-a

supply voltage − 9.0 V

maximum power input − +20 dBm
maximum operating junction temperature − +150 °C
maximum power dissipation in quiet air − 250 mW
storage temperature −65 +150 °C

thermal resistance from junction to ambient in free air 120 K/W

HANDLING

All pins withstand the ESD test in accordance with MIL-STD-883C class 2 (method 3015.5), except pins LOINA and
LOINB which withstand 1500 V (class 1).

1995 Dec 13 7

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077BM

DC CHARACTERISTICS

VCC=4V; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

=25°C; unless otherwise specified.

amb

Pins: V

V

CC

I

CC(RX)

I

CC(TX)

I

CC(PD)

I

CC(SX)

I

CC(SRX)

I

CC(STX)

and V

CCLNA

CCLO

supply voltage over full temperature range 3.6 4.0 5.3 V
supply current in RX mode 21.5 26.5 33.5 mA
supply current in TX mode 10.5 13.5 18 mA
supply current in power-down mode −−50 µA
supply current in SX mode 5.5 7.5 10 mA
supply current in SRX mode − 29 − mA
supply current in STX mode − 18 − mA

Pins: RXON, TXON and SXON

V

th

V

IH

V

IL

I

IH

I

IL

CMOS threshold voltage note 1 − 1.25 − V
HIGH level input voltage 0.7V
LOW level input voltage −0.3 − 0.8 V
HIGH level static input current pins at VCC− 0.4 V −1 − +1 µA
LOW level static input current pins at 0.4 V −1 − +1 µA

Pins: RFINA and RFINB

V

I

DC input voltage level receive section on − 2.0 − V

Pins: IFA and IFB

I

O

DC output current receive section on − 2.5 − mA

Pins: TXINA and TXINB

V

I

DC input voltage level transmit section on − 2.0 − V

Pins: TXOA and TXOB

I

O

DC output current transmit section on − 0.9 − mA

Pins: LOINA and LOINB

V

LOIN

DC input voltage level RXON, TXON or SXON HIGH − 3.3 − V

CC

− V

CC

V

Note

1. The referenced inputs should be connected to a valid CMOS input level.

1995 Dec 13 8

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077BM

AC CHARACTERISTICS

V

=4V; T

CC

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Receive section (receive section enabled)

R

iRX

C

iRX

f

iRX

RL

iRX

G

CPRX

G

rip

∆G/T gain variation with temperature T

CP1

RX

DES3 3 dB desensitisation point interferer frequency offset: 3 MHz;

IP2D

RX

IP3

RX

NF

RX

Z

LRX

RL

iRX

f

oRX

IR

RX

Local oscillator section (receive section enabled)

f

iLO

R

iLO

C

iLO

= −30 to +85 °C; unless otherwise specified.

amb

RF input resistance (real part of

balanced; at 1850 MHz − 60 −Ω

the parallel input impedance)
RF input capacitance

balanced; at 1850 MHz − 1 − pF
(imaginary part of the parallel
input impedance)

RF input frequency 1800 − 2000 MHz
return loss on matched RF input balanced; note 1 11 15 − dB
conversion power gain differential RF inputs to differential

17 20 23 dB
IF outputs loaded to 1 kΩ
differential

gain ripple as a function of RF
frequency

1 dB compression point differential RF inputs to differential

between 1805 and 1880 MHz;

− 0.2 − dB

note 2

= −30 to +25 °C; note 2 −20 0 +10 mdB/°C

amb

= +25 to +85 °C; note 2 −40 −30 −20 mdB/°C

T

amb

−26 −23 − dBm

IF outputs; note 1

−−30 − dBm
differential RF inputs to differential
IF outputs; note 1

interferer frequency offset: 20 MHz;

−−27 − dBm
differential RF inputs to differential
IF outputs; note 1

2nd-order intercept point differential RF inputs to differential

+15 +22 − dBm

IF outputs; note 2

3rd-order intercept point differential RF inputs to differential

−23 −17 − dBm
IF outputs; note 2

overall noise figure differential RF inputs to differential

− 4.3 5.0 dB
IF outputs; notes 2 and 3

typical application IF output load

balanced − 1 − kΩ

impedance
return loss on matched IF input balanced; note 1 11 15 − dB
IF frequency range 170 188 210 MHz
rejection of image frequency V

QUADLO

f

LO<fRF

tuned 20 −− dB

; fIF= 188 MHz; note 4 25 32 − dB

LO input frequency 1600 − 2200 MHz
LO input resistance (real part of

balanced − 45 −Ω

the parallel input impedance)
LO input capacitance

balanced − 2 − pF

(imaginary part of the parallel
input impedance)

1995 Dec 13 9

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077BM

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

RL

iLO

return loss on matched input
(including standby mode)

∆RL

iLO

return loss variation between

SX, SRX and STX modes
P
RI

R

iLO

LO

tune

LO input power level −6 −3 +3 dBm

reverse isolation LOIN to RFIN at LO frequency;

image rejection tuning resistor connected between V

Transmit section (transmit section enabled)

Z
RL

LTX

oTX

TX IF typical load impedance balanced − 500 −Ω

return loss on matched TX IF

output
R

iTX

TX RF input resistance

(real part of the parallel input

impedance)
C

iTX

TX RF input capacitance

(imaginary part of the parallel

input impedance)
f

iTX

RL

iTX

G

CPTX

f

oTX

CP1

TX

IP2

TX

IP3

TX

NF

TX

I

TX

RI

TX

TX input frequency 1600 − 2000 MHz

return loss on matched TX input note 1 10 15 − dB

conversion power gain differential transmitter inputs to

TX output frequency 50 − 400 MHz

1 dB input compression point note 2 −25 −22 − dBm

2nd-order intercept point note 2 − +22 − dBm

3rd-order intercept point note 2 −20 −16 − dBm

noise figure double sideband; notes 2 and 3 − 59 dB

isolation LOIN to TXIN; note 1 40 −− dB

reverse isolation TXIN to LOIN; note 1 40 −− dB

Timing

t

stu

start-up time of each block 1 5 20 µs

Notes

1. Measured and guaranteed only on UAA2077BM demonstration board at T

2. Measured and guaranteed only on UAA2077BM demonstration board.

3. This value includes printed-circuit board and balun losses.

4. Measured and guaranteed only on UAA2077BM demonstration board at T
connected between V

QUADLO

and VCC.

note 1 9 12 − dB

linear S11 variation; note 1 − 5 − mU

40 −− dB

note 1

and

QUADLO

V

CC

0 4.7 − kΩ

note 1 11 15 − dB

balanced; at 1750 MHz − 65 −Ω

balanced; at 1750 MHz − 1 − pF

6 9 12 dB
differential transmitter IF outputs
loaded with 500 Ω differential

= +25 °C.

amb

= +25 °C, with a 4.7 kΩ resistor

amb

1995 Dec 13 10

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077BM

APPLICATION INFORMATION

IF

188 MHz

C12

22 pF

12 pF

L5

120 nH

C4

120 pF

L3

180

R1

560 Ω

TXOUT

93 MHz

nH

4 V

C11

L2

C13

R2

22 pF

12 pF

180

560 Ω

nH

C2612 pF

L13

56 nH

IFA

C22

3.9 pF

120 nHL4

L11

C10

201

R6

192

183

82 pF

100

1200 Ω

174

nH

C23

L12

4 V

165

C25

IFB

R7

156

12 pF

3.9 pF

nH

100

1200 Ω

56 nHL14

C24

147

138

UAA2077BM

4 V

1 nF

C28

C27

8.2 pF

C29

C19

129

1110

8.2 pF

8.2 pF

RXON

TXON

2

3.3 nH

L10

C21

2.2 pF

L9

3.3 nH

C20

2.2 pF

R5

C9

R3

LOIN

1.55 to 1.75 GHz

kΩ

560

pF

8.2
1

kΩ

560

MBG014

4 V

handbook, full pagewidth

Fig.6 Application diagram.

C7

pF

8.2

C5

82 pF

L15

6.8 nH

C6

L8 4.7 nH

C18

C17

8.2 pF

C16 1.8 pF

TXIN

1.6 to 1.8

L7 4.7 nH

GHz

8.2 pF

4 V

C15 1.8 pF

8.2 pF
C1

L6 5.6 nH

8.2 pF

C2 1.2 pF

RFIN

1.8 to 2

C3

L1 5.6 nH

GHz

1995 Dec 13 11

8.2 pF

C14 1.2 pF

C31

C30

R8

QUADLO

V

82 pF

8.2 pF

kΩ

4.7

SXON

2

2

4 V

R4

C8

1

560

8.2

1

kΩ

pF

Figure 6 illustrates the electrical diagram of the UAA2077BM Philips demonstration board for DCS1800 applications.

For measurement purposes all matching is to 50 Ω. Different values will be used in a real application.

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077BM

PACKAGE OUTLINE

SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm

D

c

y

Z

20

pin 1 index

11

A

2

A

1

110

w M

b

e

p

E

H

E

detail X

SOT266-1

A

X

v M

A

Q

(A )

L

p

L

A

3

θ

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT A1A2A

mm

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

A

max.

1.5

OUTLINE
VERSION

SOT266-1

0.1501.4

1.2

b

3

p

0.32

0.20

0.20

0.13

0.25

IEC JEDEC EIAJ

(1)E(1)

cD

6.6

6.4

REFERENCES

4.5

0.65 1.0 0.2

4.3

1995 Dec 13 12

eHELLpQZywv θ

6.6

6.2

0.75

0.45

0.65

0.45

PROJECTION

0.13 0.1

EUROPEAN

(1)

0.48

0.18

ISSUE DATE

90-04-05
95-02-25

o

10

o

0

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077BM

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

Reflow soldering

Reflow soldering techniques are suitable for all SSOP
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

Wave soldering isnot recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

(order code 9398 652 90011).

If wave soldering cannot be avoided, the following
conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)
soldering technique should be used.

• The longitudinal axis of the package footprint must

be parallel to the solder flow and must incorporate
solder thieves at the downstream end.

Even with these conditions, only consider wave
soldering SSOP packages that have a body width of

4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1995 Dec 13 13

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077BM

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1995 Dec 13 14

Philips Semiconductors Product specification

2 GHz image rejecting front-end UAA2077BM

NOTES

1995 Dec 13 15

Philips Semiconductors – a worldwide company

Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428)

BUENOS AIRES, Tel. [phone], Fax. [phone]

Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]

Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]

Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands,

Tel. [phone], Fax. [phone]

Brazil: Rua do Rocio 220 - 5

CEP: 04552-903-SÃO PAULO-SP, Brazil,
P.O. Box 7383 (01064-970),
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS:

Tel. [phone], Fax. [phone]

Chile: Av. Santa Maria 0760, SANTIAGO,

Tel. [phone], Fax. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: IPRELENSO LTDA, Carrera 21 No. 56-17,

77621 BOGOTA, Tel. [phone],
Fax. [phone]

Denmark: Prags Boulevard 80, PB 1919, DK-2300

COPENHAGEN S, Tel. [phone], Fax. [phone]

Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]

France: 4 Rue du Port-aux-Vins, BP317,

92156 SURESNES Cedex,
Tel. [phone], Fax. [phone]

Germany: P.O. Box 10 51 40, 20035 HAMBURG,

Tel. [phone], Fax. [phone]

Greece: No. 15, 25th March Street, GR 17778 TAVROS,

Tel. [phone] 911, Fax. [phone]

India: Philips INDIA Ltd, Shivsagar Estate, A Block,

Dr. Annie Besant Rd. Worli, Bombay 400 018
Tel. [phone], Fax. [phone]

Indonesia: Philips House, Jalan H.R. Rasuna Said Kav. 3-4,

P.O. Box 4252, JAKARTA 12950,
Tel. [phone], Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS S.r.l.,

Piazza IV Novembre 3, 20124 MILANO,
Tel. [phone], Fax. [phone]

Japan: Philips Bldg13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong,

Yongsan-ku, SEOUL, Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA,

SELANGOR, Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TX 79905,

Tel. [phone], Fax. [phone]

th

floor, Suite 51,

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]

New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]

Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: Philips Electrical Industries of Pakistan Ltd.,

Exchange Bldg. ST-2/A, Block 9, KDA Scheme 5, Clifton,
KARACHI 75600, Tel. [phone],
Fax. [phone]

Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Portugal: PHILIPS PORTUGUESA, S.A.,

Rua dr. António Loureiro Borges 5, Arquiparque - Miraflores,
Apartado 300, 2795 LINDA-A-VELHA,
Tel. [phone], Fax. [phone]

Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. [phone], Fax. [phone]

South Africa: S.A. PHILIPS Pty Ltd.,

195-215 Main Road Martindale, 2092 JOHANNESBURG,
P.O. Box 7430, Johannesburg 2000,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,

Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla. S-164 85 STOCKHOLM,

Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. [phone], Fax. [phone]

Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West

Road, Sec. 1. Taipeh, Taiwan ROC, P.O. Box 22978,
TAIPEI 100, Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong,
Bangkok 10260, THAILAND,
Tel. [phone], Fax. [phone]

Turkey:Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,

Tel. [phone], Fax. [phone]

Ukraine: Philips UKRAINE, 2A Akademika Koroleva str., Office 165,

252148 KIEV, Tel.[phone], Fax. [phone]

United Kingdom: Philips Semiconductors LTD.,

276 Bath Road, Hayes, MIDDLESEX UB3 5BX,
Tel. [phone], Fax. [phone]

United States:811 East Arques Avenue, SUNNYVALE,

CA 94088-3409, Tel. [phone], Fax. [phone]

Uruguay: Coronel Mora 433, MONTEVIDEO,

Tel. [phone], Fax. [phone]

Internet: http://www.semiconductors.philips.com/ps/
For all other countries apply to: Philips Semiconductors,

International Marketing and Sales, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands,
Telex 35000 phtcnl, Fax. [phone]

SCDS47 © Philips Electronics N.V. 1995

All rights are reserved. Reproduction in whole or in part is prohibited without the
prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation
or contract, is believed to be accurate and reliable and may be changed without
notice. No liability will be accepted by the publisher for any consequence of its
use. Publication thereof does not convey nor imply any license under patent- or
other industrial or intellectual property rights.

Printed in The Netherlands

413061/1100/03/pp16 Date of release: 1995 Dec 13
Document order number: 9397750 00526