Datasheet UAA2073M Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

UAA2073M

Image rejecting front-end
for GSM applications

Product specification
Supersedes data of July 1995
File under Integrated Circuits, IC03

1995 Dec 07

Philips Semiconductors Product specification

Image rejecting front-end
for GSM applications

FEATURES

• Low-noise, wide dynamic range amplifier

• Very low noise figure

• Dual balanced mixer for at least 30 dB; on-chip image

rejection

• IF I/Q combination network for 50 to 100 MHz

• Down-conversion mixer for closed-loop transmitters

• Independent TX/RX fast on/off power-down modes

• Very small outline packaging

• Very small application (no image filter).

APPLICATIONS

• 900 MHz front-end for GSM hand-portable equipment

• Compact digital mobile communication equipment

• TDMA receivers.

GENERAL DESCRIPTION

UAA2073M contains both a receiver front-end and a high
frequency transmit mixer intended for GSM (Global
System for Mobile communications) cellular telephones.
Designed in an advanced BiCMOS process it combines
high performance with low power consumption and a high
degree of integration, thus reducing external component
costs and total front-end size.

The main advantage of the UAA2073M is its ability to
provide over 30 dB of image rejection. Consequently, the
image filter between the LNA and the mixer is suppressed
and the duplexer design is eased, compared with a
conventional front-end design.

UAA2073M

Image rejection is achieved in the internal architecture by
two RF mixers in quadrature and two all-pass filters in I
and Q IF channels that phase shift the IF by 45° and 135°
respectively. The two phase shifted IFs are recombined
and buffered to furnish the IF output signal.

For instance, signals presented at the RF input at LO + IF
frequency are rejected through this signal processing
while signals at LO − IF frequency can form the IF signal.
An internal switch allows to reject the upper or lower image
frequency. Image rejection is at an optimum when the IF is
71 MHz and local oscillator is above the wanted signal.

The receiver section consists of a low-noise amplifier that
drives a quadrature mixer pair. The IF amplifier has
on-chip 45° and 135° phase shifting and a combining
network for image rejection.The IF driver has differential
open-collector type outputs.

The LO part consists of an internal all-pass type phase
shifter to provide quadrature LO signals to the receive
mixers. The all-pass filters outputs are buffered before
been fed to the receive mixers.

The transmit section consists of a down-conversion mixer
and a transmit IF driver stage. In the transmit mode an
internal LO buffer is used to drive the transmit IF
down-conversion mixer.

All RF and IF inputs or outputs are balanced to reduce
EMC issues.

Fast power-up switching is possible. A synthesizer-on
(synthon) mode enables LO buffers independent of the
other circuits. When SYNTHON pin is HIGH, all internal
buffers on the LO path of the circuit are turned on, thus
minimizing LO pulling when remainder of receive chain is
powered-up.

ORDERING INFORMATION

TYPE NUMBER

NAME DESCRIPTION VERSION

UAA2073M SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1

1995 Dec 07 2

PACKAGE

Philips Semiconductors Product specification

Image rejecting front-end

UAA2073M

for GSM applications

QUICK REFERENCE DATA

Note 1.

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

V

CC

I

CC(RX)

I

CC(TX)

NF noise figure on demonstration board (including matching

G

CP

IR image frequency rejection 30 37 − dB
T

amb

Note

1. For conditions see Chapters “DC characteristics” and “AC characteristics”.

BLOCK DIAGRAM

supply voltage 3.6 3.75 5.3 V
receive supply current 21 26 32 mA
transmit supply current 9 12 15 mA

− 3.25 4.3 dB

and PCB losses)
conversion power gain 20 23 26 dB

operating ambient temperature −30 +25 +85 °C

handbook, full pagewidth

V

CC1

RFINA
RFINB

GND1

V

CC2

RXON

TXON

SYNTHON

GND2

n.c. n.c. SBS

4

5
6

7

15

11
12

REGULATORS

10

16

2 3

LNA

low-noise

amplifier

CURRENT

RX
TX
IF
LO

UAA2073M

TRANSMIT SECTION

QUADRATURE

PHASE

SHIFTER

LOCAL OSCILLATOR

SECTION

LOINA

1

IF

COMBINER

RECEIVE SECTION

MIXER

81718

9

TXINATXINBLOINB

20

19

14

13

MBG794

IFA

IFB

TXOIFA
TXOIFB

Fig.1 Block diagram.

1995 Dec 07 3

Philips Semiconductors Product specification

Image rejecting front-end
for GSM applications

PINNING

SYMBOL PIN DESCRIPTION

SBS 1 sideband selection
n.c. 2 not connected
n.c. 3 not connected
V

CC1

RFINA 5 RF input A (balanced)
RFINB 6 RF input B (balanced)
GND1 7 ground 1 for receive and transmit

TXINA 8 transmit mixer input A (balanced)
TXINB 9 transmit mixer input B (balanced)
SYNTHON 10 hardware power-on of LO section

RXON 11 hardware power-on for receive

TXON 12 hardware power-on for transmit

TXOIFB 13 transmit mixer IF output B

TXOIFA 14 transmit mixer IF output A

V

CC2

GND2 16 ground 2 for LO section
LOINB 17 LO input B (balanced)
LOINA 18 LO input A (balanced)
IFB 19 IF output B (balanced)
IFA 20 IF output A (balanced)

4 supply voltage for receive and

transmit sections

sections

(including buffers to RX and TX)

section and LO buffers to RX

section and LO buffers to TX

(balanced)

(balanced)

15 supply voltage for LO section

handbook, halfpage

SYNTHON RXON

SBS

1

n.c.

2

n.c.

3

V

4

CC1

RFINA

5

UAA2073M

6

RFINB

7

GND1

TXINA

8
9

TXINB

10

MBG793

Fig.2 Pin configuration.

UAA2073M

20

IFA
IFB

19
18

LOINA
LOINB

17

GND2

16

V

15

CC2

14

TXOIFA

13

TXOIFB
TXON

12
11

1995 Dec 07 4

Philips Semiconductors Product specification

Image rejecting front-end
for GSM applications

FUNCTIONAL DESCRIPTION
Receive section

The circuit contains a low-noise amplifier followed by two
high dynamic range mixers. These mixers are of the
Gilbert-cell type. The whole internal architecture is fully
differential.

The local oscillator, shifted in phase to 45° and 135°,
mixes the amplified RF to create I and Q channels. The
two I and Q channels are buffered, phase shifted by 45°
and 135° respectively, amplified and recombined internally
to realize the image rejection.

Pin SBS allows sideband selection:

• f

LO<fRF

• fLO>fRF (SBS = 0).

(SBS = 1)

UAA2073M

Balanced signal interfaces are used for minimizing
crosstalk due to package parasitics. The RF differential
input impedance is 150 Ω (parallel real part), choosen to
minimize current consumption at best noise performance.

The IF output is differential and of the open-collector type,
tuned for 71 MHz. Typical application will load the output
with a differential 500 Ω load; i.e. a 500 Ω resistor load at
each IF output, plus a 1 kΩ to x Ω narrow band matching
network (x Ω being the input impedance of the IF filter).
The path to V
inductors. The output voltage is limited to VCC+3Vbe or
3 diode forward voltage drops.

Fast switching, on/off, of the receive section is controlled
by the hardware input RXON.

for the DC current is achieved via tuning

CC

handbook, full pagewidth

V

CC1

RFINA
RFINB

GND1

LNA

MIXER

MIXER

LOIN

IF

amplifier

IF

amplifier

+45

+135

o

o

RXONSYNTHON

Fig.3 Block diagram, receive section.

SBS

IFA

IF

COMBINER

IFB

MBG795

1995 Dec 07 5

Philips Semiconductors Product specification

Image rejecting front-end
for GSM applications

Local oscillator section

The local oscillator (LO) input directly drives the two
internal all-pass networks to provide quadrature LO to the
receive mixers.

The LO differential input impedance is 50 Ω
(parallel real part).

A synthesizer-on (synthon) mode is used to power-up the
buffering on the LO inputs, minimizing the pulling effect on
the external VCO when entering transmit or receive
modes.

This mode is active when the SYNTHON input is HIGH.
Table 1 shows status of circuit in accordance with TXON,
RXON and SYNTHON inputs.

handbook, halfpage

to RX

UAA2073M

Transmit mixer

This mixer is used for down-conversion to the transmit IF.
Its inputs are coupled to the transmit RF and down-convert
it to a modulated transmit IF frequency which is phase
locked with the baseband modulation.

The transmit mixer provides a differential input at 200 Ω
and a differential output driver buffer for a 1 kΩ load. The
IF outputs are low impedance (emitter followers).

Fast switching, on/off, of the transmit section is controlled
by the hardware input TXON.

V

CC2

RXON

TXON

SYNTHON

GND2

RX

CURRENT

REGULATORS

TX
IF
LO

LOINA

QUAD

LOINB

Fig.4 Block diagram, LO section.

to TX

MBG796

handbook, halfpage

LOIN

Fig.5 Block diagram, transmit mixer.

SYNTHON

TX MIXER

TXOIFA
TXOIFB

MBG797

TXINBTXON

TXINA

1995 Dec 07 6

Philips Semiconductors Product specification

Image rejecting front-end

UAA2073M

for GSM applications

Table 1 Control of power status

EXTERNAL PIN LEVEL

TXON RXON SYNTHON

LOW LOW LOW power-down mode
LOW HIGH LOW RX mode: receive section and LO buffers to RX on

HIGH LOW LOW TX mode: transmit section and LO buffers to TX on

LOW LOW HIGH synthon mode: complete LO section on

LOW HIGH HIGH SRX mode: receive section on and synthon mode active
HIGH LOW HIGH STX mode: transmit section on and synthon mode active
HIGH HIGH LOW receive and transmit sections on; specification not guaranteed
HIGH HIGH HIGH receive and transmit sections on; specification not guaranteed

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

CC

∆GND difference in ground supply voltage applied between GND1 and GND2 − 0.6 V
P

l(max)

P

dis(max)

T

j(max)

T

stg

supply voltage − 9V

maximum power input − +20 dBm
maximum power dissipation in quiet air − 250 mW
maximum operating junction temperature − +150 °C
storage temperature −65 +150 °C

CIRCUIT MODE OF OPERATION

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-a

HANDLING

Every pin withstands the ESD test in accordance with MIL-STD-883C class 2 (method 3015.5).

thermal resistance from junction to ambient in free air 120 K/W

1995 Dec 07 7

Philips Semiconductors Product specification

Image rejecting front-end

UAA2073M

for GSM applications

DC CHARACTERISTICS

VCC= 3.75 V; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Pins V

V

CC

I

CC(RX)

I

CC(TX)

I

CC(SX)

I

CC(SRX)

I

CC(STX)

I

CC(PD)

CC1

and V

Pins SYNTHON, RXON, TXON and SBS

V

th

V

IH

V

IL

I

IH

I

IL

Pins RFINA and RFINB

V

I(RFIN)

Pins IFA and IFB

I

O(IF)

Pins TXINA and TXINB

V

I(TXIN)

Pins TXOIFA and TXOIFB

V

O(TXOIF)

Pins LOINA and LOINB

V

I(LOIN)

=25°C; unless otherwise specified.

amb

CC2

supply voltage over full temperature range 3.6 3.75 5.3 V
supply current in RX mode 21 26 32 mA
supply current in TX mode 9 12 15 mA
supply current in synthon mode 4.4 5.6 6.6 mA
supply current in SRX mode 23 28 34 mA
supply current in STX mode 12.5 15.0 19.5 mA
supply current in power-down mode − 0.01 50 µA

CMOS threshold voltage note 1 − 1.25 − V
HIGH level input voltage 0.7V

CC

− V

CC

V
LOW level input voltage −0.3 − 0.8 V
HIGH level static input current pin at VCC− 0.4 V −1 − +1 µA
LOW level static input current pin at 0.4 V −1 − +1 µA

DC input voltage level receive section on 2.0 2.2 2.4 V

DC output current receive section on 2.3 3.0 3.8 mA

DC input voltage level transmit section on 2.1 2.4 2.6 V

DC output voltage level transmit section on 1.8 1.9 2.1 V

DC input voltage level receive section on 2.3 2.5 2.8 V

transmit section on 2.3 2.5 2.8 V

Note

1. The referenced inputs should be connected to a valid CMOS input level.

1995 Dec 07 8

Philips Semiconductors Product specification

Image rejecting front-end

UAA2073M

for GSM applications

AC CHARACTERISTICS

V

= 3.75 V; T

CC

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Receive section (receive section on)

Z

RF

f

RF

RL

RF

G

CP

G

rip

∆G/T gain variation with temperature note 2 −20 −15 −10 mdB/K
DES1 1 dB desensitization input power interferer frequency offset

CP1

RX

IP2D

RX

IP3

RX

NF

RX

R

L(IF)

C

L(IF)

f

IF

IR image frequency rejection 30 37 − dB

= −30 to +85 °C; unless otherwise specified.

amb

RF input impedance (real part) balanced parallel − 150 −Ω
RF input frequency 925 − 960 MHz
return loss on matched RF input note 1 15 20 − dB
conversion power gain differential RF input to

20 23 26 dB
differential IF output matched to
1kΩ differential

gain ripple as a function of RF

note 2 − 0.2 0.5 dB

frequency

−−30 − dBm

3 MHz

1 dB input compression point note 1 −24.5 −23.0 − dBm
2nd order intercept point

differential output; note 2 +30 +40 − dBm

referenced to the RF differential
input

3rd order intercept point

note 2 −18 −15 − dBm

referenced to the RF input
overall noise figure RF input to differential IF output;

− 3.25 4.30 dB

notes 2 and 3

typical application IF output load

between pin and V

CC

− 500 −Ω

resistor
IF output load capacitance unbalanced −−2pF
IF frequency range fLO>f

f

LO<fRF

RF

50 71 100 MHz

50 71 100 MHz

Local oscillator section (RXON or TXON or SYNTHON = 1)

f

LO

Z

LO

∆Z

LO

LO input frequency 850 − 1100 MHz
LO input impedance balanced − 50 −Ω
impedance change when

switching from synthon mode to

mUnits measured on Smith
chart; note 1

SRX or STX mode

RL

LO

return loss on matched input

note 2 10 15 − dB

(including power-down mode)
P
RI

i(LO)

LO

LO input power level −7 −4 0 dBm

reverse isolation LOIN to RFIN at LO frequency;

note 2

1995 Dec 07 9

− 20 −Ω

40 −−dB

Philips Semiconductors Product specification

Image rejecting front-end

UAA2073M

for GSM applications

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Transmit section (transmit section on)

Z

O(TX)

Z

L(TX)

C

L(TX)

Z

i(TX)

f

i(TX)

RL

TX

G

CP

f

o(TX)

CP1

TX

IP2

TX

IP3

TX

NF

TX

RI

TX

I

TX

Timing

t

start

Notes

1. Measured and guaranteed only on Philips UAA2073M demonstration board at T

2. Measured and guaranteed only on Philips UAA2073M demonstration board.

3. This value includes printed-circuit board and balun losses on Philips UAA2073M demonstration board over full
temperature range.

TX IF output impedance −−200 Ω
TX IF load impedance − 1 − kΩ
TX IF load capacitance −−2pF
TX RF input impedance balanced − 200 −Ω
TX input frequency 880 − 915 MHz
return loss on matched TX input note 1 15 20 − dB
conversion power gain from 200 Ω to 1 kΩ output;

5 7.4 10 dB

note 2
TX output frequency 40 − 200 MHz
1 dB input compression point note 1 −22 −17.5 − dBm
2nd order intercept point − +20 − dBm
3rd order intercept point −12 −9 − dBm
noise figure double sideband; notes 2 and 3 − 9.8 12 dB
reverse isolation TXIN to LOIN; note 2 40 −−dB
isolation LOIN to TXIN; note 2 40 −−dB

start-up time of each block 1 5 20 µs

= +25 °C.

amb

1995 Dec 07 10

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1995 Dec 07 11

APPLICATION INFORMATION

Philips Semiconductors Product specification

Image rejecting front-end

for GSM applications

RFIN

925 to 960 MHz

TXIN

880 to 915 MHz

L2 15 nH

C3 1.5 pF
L3 15 nH

C1 1.5 pF
L5 15 nH

C5 2.2 pF
L4 15 nH

C6 2.2 pF

C2

27 pF

C4

27 pF

C8

27 pF

C7

27 pF

V

CC

L1

18 nH

L6
27 nH

2

1

C20

27 pF

C24

1 nF

C26

27
pF

C23

27 pF

SYNTHON

R9

680

kΩ

SBS

R5
680 kΩ

10 pF

L11

R3

680 Ω

5 V

R4

680 Ω

201
192
183
174

C27

27
pF

V

CC

TXON

C15

180 Ω

180 Ω

R10
680

kΩ

27 pF

R1

R2

UAA2073M

165
156
147
138
129
1110

C25

27
pF

RXON

2

1

R8

680

kΩ

2

1

470

nH

L12
470

nH

C12

27 pF

C11

27 pF

C13

390 pF

C14

390 pF

C17

IFA

1 nF

C19

IFB

10 pF

C18

L8 6.8 nH

C9 2.7 pF
L7 6.8 nH

C10 2.7 pF
L14 220 nH

C31 8.2 pF
L13 220 nH

C32 8.2 pF

C33

18 pF

270 nH
L16

C34
18 pF

270 nHL15

LOIN

854 to 1032 MHz

TXOIF

117 MHz

IFO

71 MHz

All matching is to 50 Ω for measurement purposes.
Different values will be used in a real application.

C28

V

120 pF

handbook, full pagewidth

CC

Fig.6 Philips demonstration board diagram for GSM applications.

MBG798

UAA2073M

Philips Semiconductors Product specification

Image rejecting front-end
for GSM applications

Table 2 UAA2073M demonstration board parts list

PART VALUE SIZE LOCATION

Resistors

R1 180 Ω 0805 TXOIF
R2 180 Ω 0805 TXOIF
R3 680 Ω 0805 IFO
R4 680 Ω 0805 IFO
R5 680 kΩ 0805 SBS
R8 680 kΩ 0805 RXON
R9 680 kΩ 0805 SYNTHON

R10 680 kΩ 0805 TXON

Capacitors

C1 1.5 pF 0805 RFIN
C2 27 pF 0805 RFIN
C3 1.5 pF 0805 RFIN
C4 27 pF 0805 RFIN
C5 2.2 pF 0805 TXIN
C6 2.2 pF 0805 TXIN
C7 27 pF 0805 TXIN
C8 27 pF 0805 TXIN

C9 2.7 pF 0805 LOIN
C10 2.7 pF 0805 LOIN
C11 27 pF 0805 LOIN
C12 27 pF 0805 LOIN
C13 390 pF 0805 TXOIF
C14 390 pF 0805 TXOIF
C15 27 pF 0805 V
C17 10 pF 0805 IFO
C18 10 pF 0805 IFO
C19 1 nF 0805 IF/V
C20 27 pF 0805 SBS
C23 27 pF 0805 V
C24 1 nF 0805 V
C25 27 pF 0805 RXON
C26 27 pF 0805 SYNTHON
C27 27 pF 0805 TXON
C28 120 pF 0805 V
C31 8.2 pF 0805 TXOIF
C32 8.2 pF 0805 TXOIF
C33 18 pF 0805 IFO
C34 18 pF 0805 IFO

CCLO

CCLNA
CCLNA

CC

CC

UAA2073M

PART VALUE SIZE LOCATION

Inductors

L1 18 nH 0805 RFIN
L2 15 nH 0805 RFIN
L3 15 nH 0805 RFIN
L4 15 nH 0805 TXIN
L5 15 nH 0805 TXIN
L6 27 nH 0805 TXIN
L7 6.8 nH 0805 LOIN

L8 6.8 nH 0805 LOIN
L11 470 nH 1008 IFO
L12 470 nH 1008 IFO
L13 220 nH 0805 TXOIF
L14 220 nH 0805 TXOIF
L15 270 nH 1008 IFO
L16 270 nH 1008 IFO

Other components

COMPONENT DESCRIPTIONS

IC1 UAA2073M

SMA/RIM sockets for RF and IF inputs/outputs

SMB V

Component manufacturers

All surface mounted resistors and capacitors are from
Philips Components. The small value capacitors are
multilayer ceramic with NPO dielectric. The inductors are
from Coilcraft UK.

socket

CC

1995 Dec 07 12

Philips Semiconductors Product specification

Image rejecting front-end
for GSM applications

PACKAGE OUTLINE

SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm

20

D

c

y

Z

11

E

H

UAA2073M

SOT266-1

A

X

v M

E

A

pin 1 index

110

w M

b

e

DIMENSIONS (mm are the original dimensions)

mm

A

max.

1.5

0.1501.4

1.2

0.25

b

3

p

0.32

0.20

UNIT A1A2A

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

p

cD

0.20

6.6

0.13

6.4

0 2.5 5 mm

scale

(1)E(1)

eHELLpQZywv θ

4.5

0.65 1.0 0.2

4.3

6.6

6.2

Q

A

2

A

1

detail X

0.75

0.65

0.45

0.45

(A )

L

p

L

A

3

θ

0.13 0.1

0.48

0.18

(1)

o

10

o

0

OUTLINE
VERSION

SOT266-1

IEC JEDEC EIAJ

REFERENCES

1995 Dec 07 13

EUROPEAN

PROJECTION

ISSUE DATE

90-04-05
95-02-25

Philips Semiconductors Product specification

Image rejecting front-end
for GSM applications

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

Reflow soldering

Reflow soldering techniques are suitable for all SSOP
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

(order code 9398 652 90011).

UAA2073M

If wave soldering cannot be avoided, the following
conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)
soldering technique should be used.

• The longitudinal axis of the package footprint must

be parallel to the solder flow and must incorporate
solder thieves at the downstream end.

Even with these conditions, only consider wave
soldering SSOP packages that have a body width of

4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1995 Dec 07 14

Philips Semiconductors Product specification

Image rejecting front-end

UAA2073M

for GSM applications

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1995 Dec 07 15

Philips Semiconductors – a worldwide company

Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428)

BUENOS AIRES, Tel. [phone], Fax. [phone]

Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]

Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]

Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands,

Tel. [phone], Fax. [phone]

Brazil: Rua do Rocio 220 - 5

CEP: 04552-903-SÃO PAULO-SP, Brazil.
P.O. Box 7383 (01064-970),
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS:

Tel. [phone], Fax. [phone]

Chile: Av. Santa Maria 0760, SANTIAGO,

Tel. [phone], Fax. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: IPRELENSO LTDA, Carrera 21 No. 56-17,

77621 BOGOTA, Tel. [phone],
Fax. [phone]

Denmark: Prags Boulevard 80, PB 1919, DK-2300

COPENHAGEN S, Tel. [phone], Fax. [phone]

Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]

France: 4 Rue du Port-aux-Vins, BP317,

92156 SURESNES Cedex,
Tel. [phone], Fax. [phone]

Germany: P.O. Box 10 63 23, 20043 HAMBURG,

Tel. [phone], Fax. [phone].

Greece: No. 15, 25th March Street, GR 17778 TAVROS,

Tel. [phone] 911, Fax. [phone]

India: Philips INDIA Ltd, Shivsagar Estate, A Block,

Dr. Annie Besant Rd. Worli, Bombay 400 018
Tel. [phone], Fax. [phone]

Indonesia: Philips House, Jalan H.R. Rasuna Said Kav. 3-4,

P.O. Box 4252, JAKARTA 12950,
Tel. [phone], Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS S.r.l.,

Piazza IV Novembre 3, 20124 MILANO,
Tel. [phone], Fax. [phone]

Japan: Philips Bldg13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong,

Yongsan-ku, SEOUL, Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA,

SELANGOR, Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TX 79905,

Tel. [phone], Fax. [phone]

th

floor, Suite 51,

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
(From 10-10-1995: Tel. [phone], Fax. [phone])

New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]

Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: Philips Electrical Industries of Pakistan Ltd.,

Exchange Bldg. ST-2/A, Block 9, KDA Scheme 5, Clifton,

KARACHI 75600, Tel. [phone],

Fax. [phone]

Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,

Metro MANILA, Tel. [phone], Fax. [phone]

Portugal: PHILIPS PORTUGUESA, S.A.,

Rua dr. António Loureiro Borges 5, Arquiparque - Miraflores,

Apartado 300, 2795 LINDA-A-VELHA,

Tel. [phone], Fax. [phone]

Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. [phone], Fax. [phone]

South Africa: S.A. PHILIPS Pty Ltd.,

195-215 Main Road Martindale, 2092 JOHANNESBURG,

P.O. Box 7430, Johannesburg 2000,

Tel. [phone], Fax. [phone].

Spain: Balmes 22, 08007 BARCELONA,

Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla. S-164 85 STOCKHOLM,

Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. [phone], Fax. [phone]

Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West

Road, Sec. 1. Taipeh, Taiwan ROC, P.O. Box 22978,

TAIPEI 100, Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong,

Bangkok 10260, THAILAND,

Tel. [phone], Fax. [phone]

Turkey:Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,

Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors LTD.,

276 Bath Road, Hayes, MIDDLESEX UB3 5BX,

Tel. [phone], Fax. [phone]

United States:811 East Arques Avenue, SUNNYVALE,

CA 94088-3409, Tel. [phone], Fax. [phone]

Uruguay: Coronel Mora 433, MONTEVIDEO,

Tel. [phone], Fax. [phone]

Internet: http://www.semiconductors.philips.com/ps/
For all other countries apply to: Philips Semiconductors,

International Marketing and Sales, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands,
Telex 35000 phtcnl, Fax. [phone] (from 10-10-1995: [phone])

SCD41 © Philips Electronics N.V. 1995

All rights are reserved. Reproduction in whole or in part is prohibited without the
prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation
or contract, is believed to be accurate and reliable and may be changed without
notice. No liability will be accepted by the publisher for any consequence of its
use. Publication thereof does not convey nor imply any license under patent- or
other industrial or intellectual property rights.

Printed in The Netherlands

413061/1100/03/pp16 Date of release: 1995 Dec 07
Document order number: 9397 750 00511