Datasheet UAA2067G Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

UAA2067G

Image reject 1800 MHz transceiver
for DECT applications

Product specification
Supersedes data of 1995 Sep 18
File under Integrated Circuits, IC17

1996 Oct 22

Philips Semiconductors Product specification

Image reject 1800 MHz transceiver
for DECT applications

FEATURES

• Receiver with:
– low noise amplifier
– dual quadrature mixers for image rejection

(lower sideband)

– I and Q combining networks at a fixed IF

• Both high-frequency and low-frequency VCOs including
buffers with good isolation for low pulling

• Transmitter with:
– dual quadrature mixers for image rejection

(lower sideband)
– amplitude ramping circuit
– amplifier with high output power.

APPLICATIONS

• 1800 MHz transceiver for DECT hand-portable
equipment

• TDMA systems.

GENERAL DESCRIPTION

The UAA2067G is a low-power transceiver intended for
use in portable and base station transceivers complying
with the DECT system. The IC performs in accordance
with specifications in the −30 to +85°C temperature range.

The UAA2067G contains a front-end receiver for the
1800 to 1900 MHz frequency range, a high-frequency
VCO for the 1650 to 1850 MHz range, a low-frequency
VCO for the 100 to 140 MHz frequency range and a
transmitter with a high-output power amplifier driver stage
for the 1800 to 1900 MHz frequency range. Designed in
an advanced BiCMOS process, it combines high
performance with low-power consumption and a high
degree of integration, thus reducing external component
costs and total radio size.

Its first advantage is to provide typically 34 dB of image
rejection in the receiver path. Thus, the image filter
between the LNA and the mixer is redundant and
consequently can be removed. The receive section

UAA2067G

consists of a low-noise amplifier that drives a quadrature
mixer pair. Image rejection is achieved by this RF mixer
pair and the two phase shifters in the I and Q channels that
phase shift the IF by 45° and 135° respectively. The two
phase shifted IFs are recombined and buffered to furnish
the IF output signal.

Signals presented at the RF input at LO − IF frequency are
rejected through this signal processing while signals at
LO + IF frequency can form the IF signal.

Its second advantage is to provide a good buffered
high-frequency VCO signal to the RX and TX mixers and
to the synthesizer-prescaler. Switching the receive or
transmit section on gives a very small change in VCO
frequency.

Its third advantage is to provide a good buffered
low-frequency VCO signal to the TX mixers, to the
synthesizer-prescaler and the second down conversion
mixer in a double conversion receiver. Switching the
transmit section on gives a very small change in
VCO frequency.

The frequency of each VCO is determined by a resonator
network that is external to the IC. Each VCO has a
regulated power supply voltage that has been designed
specifically for minimizing a change in frequency due to
changes in the power supply voltage, which may be
caused for instance by switching on the power amplifier.

Its fourth advantage is to provide typically 33 dBc of image
rejection in the single-sideband up-conversion mixer. Thus
the image filter between the power amplifier and the
antenna is redundant and may consequently be removed.
Image rejection is achieved in the internal architecture by
two RF mixers in quadrature and two phase shifters in the
low-frequency VCO signal that shifts the phase to
0° and 90°. The output signals of the mixers are summed
to form the single-upper-sideband output signal.

The output stage is a high-level output buffer with an
output power of approximately 4 dBm. The output level is
sufficient to drive a three-stage bipolar preamplifier
for DECT.

ORDERING INFORMATION

TYPE NUMBER

NAME DESCRIPTION VERSION

UAA2067G LQFP32 plastic low profile quad flat package; 32 leads; body 5 × 5 × 1.4 mm SOT401-1

1996 Oct 22 2

PACKAGE

Philips Semiconductors Product specification

Image reject 1800 MHz transceiver

UAA2067G

for DECT applications

QUICK REFERENCE DATA

For conditions see Chapters “DC characteristics” and “AC characteristics”.

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

V

CC

I

CC(RX)

I

CC(TX)

I

CC(RFLO)

I

CC(IFLO)

NF

RX

G

CP

IR

RX

f

RFLO

f

IFLO

P

out

IR

TX

T

amb

supply voltage 3.0 3.6 5.5 V
receive supply current − 24 − mA
transmit supply current − 42 − mA
RF oscillator supply current − 15 − mA
IF oscillator supply current − 7 − mA
receive noise figure −−7.0 dB
conversion power gain − 30 − dB
receive image frequency rejection − 34 − dB
RFLO frequency range 1.65 − 1.85 GHz
IFLO frequency range 100 − 140 MHz
output transmit power − 4 − dBm
transmit image frequency rejection − 33 − dBc
operating ambient temperature −30 +25 +85 °C

1996 Oct 22 3

Philips Semiconductors Product specification

Image reject 1800 MHz transceiver
for DECT applications

BLOCK DIAGRAM

CC(IFLO)

IFO

25

∑

IFDEC

V

5

UAA2067

PDIFLO

1

GND2

IFLORES

6

7

IFLO

OSCILLATOR

IFLOREG

2

4

IFLOO

3

GND1

o

ICEN

8

0

UAA2067G

handbook, full pagewidth

MGC867

o

90

GND6

PDRX

CC(MIX)

V

GND7

28

RXA

LNA

29

RXB

o

135

23

18

CC2(RFLO)

CC1(RFLO)

V

V

22

GND5

15

PDRFLO

o

o

0

90

RFLO

OSCILLATOR

21

20

RFLOB

RFLOA

17

24

RFLOO

RFLOREG

19

16

GND4

CC(RFLOO)

V

13

TXA

∑

RAMP

12

TXB

14

11109

GND3

CC(TX)

V

PDTX TXRAMP

Fig.1 Block diagram.

o

45

30 26

32 27 31

1996 Oct 22 4

Philips Semiconductors Product specification

Image reject 1800 MHz transceiver
for DECT applications

PINNING

SYMBOL PIN DESCRIPTION

PDIFLO 1 power-down for IFLO
IFLOREG 2 regulator decoupling for IFLO
GND1 3 ground for IFLO; note 1
IFLOO 4 IFLO output
V

CC(IFLO)

IFLORES 6 IFLO resonator
GND2 7 ground for IFLO resonator; note 1
ICEN 8 IC enable
PDTX 9 power-down for transmitter
TXRAMP 10 power ramping transmitter
V

CC(TX)

TXB 12 transmitter RF output B
TXA 13 transmitter RF output A
GND3 14 ground for transmitter output stage
PDRFLO 15 power-down for RFLO
V

CC(RFLOO)

RFLOO 17 RFLO output
V

CC1(RFLO)

GND4 19 ground for RFLO oscillator; note 4
RFLOA 20 RFLO resonator
RFLOB 21 RFLO resonator
GND5 22 ground for RFLO oscillator; note 4
V

CC2(RFLO)

RFLOREG 24 regulator decoupling for RFLO
IFO 25 receiver IF output
IFDEC 26 IF decoupling
V

CC(MIX)

RXA 28 receiver RF input A
RXB 29 receiver RF input B
GND6 30 ground for receive and transmit mixers
PDRX 31 power-down for receiver
GND7 32 die-pad ground

5 supply voltage for IFLO

11 supply voltage for transmitter output stage; note 2

16 supply voltage for RFLO output

18 supply voltage for RFLO oscillator; note 3

23 supply voltage for RFLO oscillator; note 3

27 supply voltage for receive and transmit mixers; note 2

UAA2067G

Notes

1. Pins 3 and 7 are internally short-circuited.

2. Pins 11 and 27 should be at the same DC voltage.

3. Pins 18 and 23 are internally short-circuited.

4. Pins 19 and 22 are internally short-circuited.

1996 Oct 22 5

Philips Semiconductors Product specification

Image reject 1800 MHz transceiver
for DECT applications

handbook, full pagewidth

PDIFLO

IFLOREG

GND1

IFLOO

V

CC(IFLO)

IFLORES

GND2

ICEN

1
2
3
4
5
6
7
8

GND7
32

PDRX
31

GND6

RXB

30

29

UAA2067

RXA
28

CC(MIX)

V
27

IFDEC
26

IFO
25

24
23
22
21
20
19
18
17

RFLOREG
V

CC2(RFLO)

GND5
RFLOB
RFLOA
GND4
V

CC1(RFLO)

RFLOO

UAA2067G

9

10

11

12

13

TXB

PDTX

CC(TX)

V

TXRAMP

TXA

Fig.2 Pin configuration.

14

GND3

15

16

PDRFLO

CC(RFLOO)

V

MGC865

1996 Oct 22 6

Philips Semiconductors Product specification

Image reject 1800 MHz transceiver
for DECT applications

FUNCTIONAL DESCRIPTION
Receive section

The circuit contains a balanced low-noise amplifier
followed by two high dynamic range mixers. The local
oscillator signals, shifted in phase to 0 and 90° mix the
amplified RF signal to the I and Q channels.These two
channels are buffered, phase shifted by 45° and 135°
respectively, amplified and recombined internally to realize
the image rejection. Signals at the RF input at RFLO − IF
frequencies are rejected through the signal processing
while signals at the RFLO + IF frequencies form the
IF signals.

An image rejection of typically 34 dB is obtained for an IF
between 100 and 120 MHz.

Balanced signals are used for minimizing crosstalk due to
package parasitics. The IF output is single-ended.
The typical load is 50 Ω.

Fast switching, on/off of the receive section is controlled
by the hardware input PDRX.

RFLO section

UAA2067G

Transmit section

The circuit contains two balanced mixers, each of which is
driven by the RFLO and IFLO signals. The output signal of
the two mixers is summed and buffered to obtain the single
upper-sideband signal at frequency RFLO + IFLO.

With the use of an off-chip time constant, the ramping
circuit defines the power ramp-up and ramp-down of the
pre-amplifier output signal.

Balanced signals are used for minimizing crosstalk due to
package parasitics.

Fast switching, on/off, of the transmit section is controlled
by the hardware input PDTX.

The power supply voltage of the transmit mixers, the
adding circuit and ramping circuit is taken from the
V
preamplifier output stage.

OPERATING MODES

To use the IC, all V
supply voltage.

and GND6 for maximum isolation from the

CC(MIX)

pins must be connected to the

CC

The high-frequency oscillator (RFLO oscillator) supplies
the local oscillator signal for the down-conversion (receive)
and up-conversion (transmit) mixers. This VCO uses an
on-chip regulator for a power-supply voltage-independent
output frequency. The buffered VCO signal is fed into a
phase shifter and an off-chip prescaler-synthesizer.
The output signal of the phase-shifter is used for driving
the RX and TX mixers. Due to the good isolation in the
buffer stages, a very small change in VCO frequency is
obtained when switching the RX and TX mixers on.

Fast switching, on/off of the oscillator section is controlled
by the hardware input PDRFLO.

IFLO section

The low-frequency oscillator (IFLO oscillator) internally
supplies the local oscillator signal to the single-sideband
transmit mixer. The buffered VCO signal is fed into a
phase shifter. The output signal of the phase-shifter is
used for driving the TX mixers.

Due to the good isolation in the buffer stages, a very small
change in VCO frequency is obtained when switching the
TX mixer on.

Fast switching on/off of the oscillator section is controlled
by the hardware input PDIFLO input.

For transceiving a DECT signal, the RFLO and IFLO
sections should be powered-on. After a stable frequency
has been reached (mainly determined by the synthesizer
design), the receiver or transmitter can be powered-on.

GMSK data modulation can be supplied in two different
ways: the data is directly modulated on IFLO or RFLO.

The ramping of the power level can be set with a time
constant that is external to the IC.

Table 1 gives the definition of the polarity of the switching
signals on the receive, the RFLO, the IFLO and the
transmit sections.

1996 Oct 22 7

Philips Semiconductors Product specification

Image reject 1800 MHz transceiver

UAA2067G

for DECT applications

Table 1 Switching signals on the receiver

SIGNAL SECTION LEVEL on/off

PDRX receive section powered-on LOW on

receive section powered-off HIGH off

PDRFLO RFLO section powered-on LOW on

RFLO section powered-off HIGH off

PDIFLO IFLO section powered-on LOW on

IFLO section powered-off HIGH off

PDTX transmit section powered-on LOW on

transmit section powered-off HIGH off

ICEN all sections disabled LOW off

all sections enabled HIGH on

Note

1. Active when ICEN is enabled.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

(1)

(1)

(1)

(1)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC

∆GND difference in ground supply voltage applied

supply voltage − 6V

note 1 − + 0.3 V

between all grounds

P

l(max)

T

j(max)

P

dis(max)

T

stg

maximum power input − +20 dBm
maximum operating junction temperature − +150 °C
maximum power dissipation in stagnant air at 25°C − 500 mW
storage temperature −65 +150 °C

Note

1. Pins short-circuited internally must be short-circuited externally.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air 90 K/W

HANDLING

Every pin withstands the ESD test in accordance with

“MIL-STD-883C class 2 (method 3015.5)”

.

1996 Oct 22 8

Philips Semiconductors Product specification

Image reject 1800 MHz transceiver

UAA2067G

for DECT applications

DC CHARACTERISTICS

= 3.6 V; T

V

CC

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Pins: V

V
I
I
I
I
I

CC(MIX)

CC

CC(RX)
CC(RFLO)
CC(IFLO)
CC(TX)
CC(PD)

Pins: PDRX, PDTX, PDRFLO, PDIFLO and ICEN

V

IH

V

IL

I

IH

I

IL

Pins: RXA, RXB, IFO and IFDEC

V

RXA,B

V

IFO

V

IFDEC

Pins: RFLOA, RFLOB, RFLOREG and RFLOO

I

RFLOA,B

V

RFLOREG

V

RFLOO

Pins: IFLORES, IFLOREG and IFLOO

V

IFLORES

V

IFLOREG

V

IFLOO

Pins: TXA, TXB and TXRAMP

I

TXA,B

I

TXRAMP

=25°C; unless otherwise specified.

amb

, V

CC(TX)

, V

CC(IFLO)

, V

CC1(RFLO)

, V

CC2(RFLO)

and V

CC(RFLOO)

supply voltage over full temperature range 3.0 3.6 5.5 V
supply current receive section on; DC tested 18 24 30 mA
supply current RFLO RFLO section on; DC tested 11 15 20 mA
supply current IFLO IFLO section on; DC tested 5 7 9 mA
supply current transmit section on; DC tested 34 42 54 mA
supply current power-down mode; DC tested − 250 µA

HIGH level input voltage 2.1 − VCC+ 0.3 V
LOW level input voltage −0.3 − 0.8 V
HIGH level static input current pin at VCC− 0.4 V −1 − +1 µA
LOW level static input current pin at 0.4 V −1 − +1 µA

DC input voltage level receive section on 2.1 2.4 2.7 V
DC output voltage level receive section on 0.9 1.1 1.3 V
DC level receive section on 2.45 2.65 2.85 V

DC current RFLO section on 123 mA
DC level RFLO section on 2.45 2.65 2.85 V
DC output voltage level RFLO section on 2.8 3.1 3.4 V

DC level IFLO section on 1.85 2.1 2.3 V
DC level IFLO section on 2.35 2.55 2.8 V
DC output voltage level IFLO section on 2.2 2.45 2.7 V

DC output current transmit section on 21018 mA
DC input current V

TXRAMP

=3V;

−−200 µA

transmit section on

1996 Oct 22 9

Philips Semiconductors Product specification

Image reject 1800 MHz transceiver

UAA2067G

for DECT applications

AC CHARACTERISTICS

= 3.0 to 5.5 V; T

V

CC

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Receive mode (receive and RFLO sections powered-on)

f
R

RFI

iRF

RF input frequency 1800 − 1900 MHz
RF input resistance

(real part of the parallel input
impedance)

C

iRF

RF input capacitance (imaginary
part of the parallel input

impedance)
PRFLO
DES3

RX

RFLO level at input to RX balun note 1 −−70 −40 dBm

RX

RF interference for 3 dB

desensitization
G

CP

CP1
P

o(RX)

RX

conversion power gain RF input to IF output

1 dB input compression point referenced to RF input; note 1 −36 −33 − dBm

IF power for

CP1RX<Pin< +8 dBm
t

rec

IP2-2

IP3

RX

NF

RX

f

IF

Z

L(IF)

RX

recovery time for Pin= +12 dBm note 1 − 230µs

mixer 2-2 spurious intercept point referenced to the RF input;

3rd order intercept point referenced to the RF input;

overall noise figure RF input to IF output; note 1 − 5.8 7 dB

IF frequency range 100 110 120 MHz

typical application IF output load

impedance
IR

RX

image frequency rejection over full temperature range 20 34 − dB

PSRR power supply rejection ratio note 1; typical load; at 110 MHz 35 −−dB

= −30 to +85°C; unless otherwise specified.

amb

balanced; at 1890 MHz − 190 −Ω

balanced; at 1890 MHz − 0.8 − pF

interference frequency offset
6 MHz; note 1

(typical load)

over full temperature range 24 30 36 dB
T

amb

referenced to IF power at
CP1RX; note 1

note 1

note 1

fIF = 110 MHz − 50 −Ω

T

=25°C2334−dB

amb

−−35 − dBm

=25°C273033dB

−6 − +6 dB

−6+2 − dBm

−30 −25 − dBm

1996 Oct 22 10

Philips Semiconductors Product specification

Image reject 1800 MHz transceiver

UAA2067G

for DECT applications

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

RF local oscillator (RFLO section powered-on)

f

RFLO(min)

R

i(RFLO)

C

i(RFLO)

V

o(RFLO)

Z

o(RFLO)

R

L(RFLO)

HAR

(RFLO)

minimum oscillator frequency

range

oscillator input resistance (real

balanced; at 1.77 GHz −−250 −Ω
part of the parallel input
impedance)

oscillator input capacitance

balanced; at 1.77 GHz − 2.7 − pF
(imaginary part of the parallel
input impedance)

local oscillator output level at

note 2; typical load resistance 50 75 − mV
pin 17; RMS value

local oscillator output impedance

at 1.77 GHz − 30 − 60j −Ω
at pin 17

typical load resistance − 300 −Ω
harmonic levels at RFLO output

note 1 −− −20 dBc
(pin 17)

1650 − 1850 MHz

IF local oscillator (IFLO section powered-on)

f

IFLO(min)

minimum oscillator frequency
range

R

i(IFLO)

oscillator input resistance
(real part of the parallel input
impedance)

C

i(IFLO)

oscillator input capacitance
(imaginary part of the parallel
input impedance)

V

o(IFLO)

IF local oscillator output level at
pin 4; RMS value

Z

o(IFLO)

local oscillator output impedance
(real part)

R

L(IFLO)

C

L(IFLO)

HAR

(IFLO)

typical load resistance − 5 − kΩ
typical load capacitance − 7 − pF
harmonic levels at IFLO output note 1 −− −15 dBc

100 120 140 MHz

−−480 −Ω

− 2.1 − pF

100 160 − mV

−− 100 Ω

1996 Oct 22 11

Philips Semiconductors Product specification

Image reject 1800 MHz transceiver

UAA2067G

for DECT applications

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Transmit mode (transmit, RFLO and IFLO sections powered-on)

f

TX

R

o(TX)

C

o(TX)

FTRFLO

Pout output transmit power V

IR

TX

Z

inTXRAMP

C

inTXRAMP

V

TXRAMP(max)

V

TXRAMP(min)

CNR

TX

Timing

t

up

C

i

Notes

1. Measured and guaranteed only on the Philips demonstration board, including PCB and balun.

2. The imaginary part of the load impedance has been tuned out. A power match is assumed.

3. A simplified DECT type approval measurement is used; the spectrum analyser has the following settings:
RBW = 100 kHz, VBW = 100 Hz, use delta marker and add 50 dB (correction for RBW = 100 kHz), f
and f

RF output frequency 1800 − 1900 MHz
RF output resistance (real part of

balanced; note 1 − 110 −Ω

the parallel output impedance)
RF output capacitance (imaginary

balanced; note 1 − 0.6 − pF
part of the parallel output
impedance)

RFLO feedthrough at the TX

TX

output

referenced to the desired

frequency; T

TXRAMP

= 0 V; note 1

=25°C; note 1

amb

−−25 −23 dBc

over full temperature range −2 4 8 dBm
T

=25°C 1 4 7 dBm

amb

image frequency rejection referenced to the desired

frequency; note 1

over full temperature range 20 33 − dBc
T

=25°C2333−dBc

amb

input impedance at pin TXRAMP 10 −−kΩ
input capacitance at pin TXRAMP −− 10 pF
ramp voltage for P

out=Pmax

ramp voltage for
P

out=Pmax

− 30 dB

carrier-to-noise ratio at TX output T

start-up/power-down time of each

=25°C; notes 1 and 3 +130 +133 − dBc/Hz

amb

over full temperature range − 510µs

− 0V

− 3.0 − V

block
input capacitance of logic inputs over full temperature range −− 5pF

RFLO

= 120 MHz, ∆f = 4.686 MHz.

IFLO

= 1.77 GHz

1996 Oct 22 12

Philips Semiconductors Product specification

Image reject 1800 MHz transceiver
for DECT applications

INTERNAL PIN CONFIGURATION

DC

SYMBOL PIN

PDIFLO 1 −
ICEN 8 −
PDTX 9 −
PDRFLO 15 −
PDRX 31 −

IFLOREG 2 2.55

RFLOREG 24 2.65

VOLTAGE

(V)

EQUIVALENT CIRCUIT

1, 8, 9, 15, 31

V

GND

MBH672

V

CC

2, 24, 26

UAA2067G

CC

IFDEC 26 2.65

GND 3, 7, 14,

0

19, 22,

30, 32

IFLOO 4 2.45

V

CC

5, 11, 16,

18, 23, 27

3.6

IFLORES 6 2.1

MBH673

4

6

GND

V

CC(IFLO)

GND

V

IFLOREG

GND

MBH674

MBH675

1996 Oct 22 13

Philips Semiconductors Product specification

Image reject 1800 MHz transceiver
for DECT applications

DC

SYMBOL PIN

TXRAMP 10 −

TXB 12 V

TXA 13 V

VOLTAGE

(V)

CC

CC

EQUIVALENT CIRCUIT

V

CC(TX)

10

12 13

V

CC(MIX)

GND

MBH677

UAA2067G

MBH676

V

CC(TX)

GND

RFLOO 17 3.1

RFLOA 20 2.0

RFLOB 21 2.0

V

CC(RFLOO)

17

GND

20 21

MBH678

MBH679

V

RFLOREG

GND

1996 Oct 22 14

Philips Semiconductors Product specification

Image reject 1800 MHz transceiver
for DECT applications

DC

SYMBOL PIN

IFO 25 1.1

RXA 28 2.4

RXB 29 2.4

VOLTAGE

(V)

UAA2067G

EQUIVALENT CIRCUIT

V

CC(IFLO)

25

GND

28

MBH680

29

MBH681

V

CC(MIX)

GND

1996 Oct 22 15

Philips Semiconductors Product specification

Image reject 1800 MHz transceiver
for DECT applications

APPLICATION INFORMATION

RF

input

6.8 nH

8.2 pF

31

10

6.8 nH

30

11

0.82 pF

29

12

CC

V

C6

R2

BB515BB515

C4

10 pF

10 kΩ

IFLO

1 nF

C8

output

C5

22 nF

L1

150 pF

C2

PDIFLO

82 nH

C39

1 nF

C1

0.82 pF

PDRX

10 pF

10 pF

32

54321
6
78

9

6.8 nH

8.2 pF

262527

28

UAA2067

151614

13

IF

CC

V

C34

output

24
23222120191817

C32

C31

1 nF

4.7 nF

1 nF

R5

C33

33 Ω

C24

10 pF

C28

22 nF

8.2

pF

1/4 λ

4.7 nF

UAA2067G

CC

V

C30

1 nF

C29

10 pF

1/4 λ

R6

33 Ω

L7

(0603)

L6

(0603)

R7

1 kΩ

C26

1.5 nH

C25

1.5 nH

RFLO tune

C27

R8

22 pF

22 pF

10 pF

1 kΩ

BBY

BBY

MGC866

5103W

handbook, full pagewidth

5103W

C7

1 nF

C9

R3

mod tune

4.7 kΩ

C11

10 pF

PDTX

TXRAMP

4.7 pF

R4

ICEN

8.2 nF

4.7 kΩ

C10

10 pF

C19

PDRFLO

C13

10 pF

λ

1/4

λ

1 nF

1/4

1 pF

pF

8.2

12 nH

5.6 nH

TX

1 pF

output

C14

CC

V

1996 Oct 22 16

10 pF

CC

V

8.2 pF

5.6 nH

V

CC

C20

C21

C23

1 nF

10 pF

8.2 pF
C22

10 pF

RFLO

output

Fig.3 Demonstration board diagram.

Figure 3 illustrates the electrical diagram of the UAA2067G Philips demonstration board for DECT applications. All matching is to 50 Ω for measurement purposes.

Different values will be used in a real application.

Philips Semiconductors Product specification

Image reject 1800 MHz transceiver

UAA2067G

for DECT applications

Application-indicative values

Measured on the Philips demonstration board, including PCB and balun at T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

RF local oscillator (RFLO section powered-on)

CNR

RFLO

carrier-to-noise ratio ∆f = 864 kHz − 117 − dBc/Hz

∆f = 2500 kHz − 128 − dBc/Hz
∆f = 4686 kHz − 134 − dBc/Hz

PULL
SHIFT

RFLO

RFLO

pulling due to enabling RX or TX V

TXRAMP

frequency shift due to 200 mV VCCchange − 5 − kHz

=3V − 5 − kHz

IF local oscillator (IFLO section powered-on)

CNR
SPUR

IFLO

IFLO

carrier-to-noise ratio ∆f = 4686 kHz − 140 − dBc/Hz
spurious signal modulation due to 0.5 mV

(RMS value) on the power supply

∆f = 4686 kHz;
measured at TX

output
PULL
SHIFT

IFLO

IFLO

pulling due to enabling TX − 1 − kHz
frequency shift due to 200 mV VCCchange − 2.5 − kHz

Transmit mode (transmit, RFLO and IFLO sections powered-on)

PSRR

SPUR

TX

TX

spurious signal modulation due to 0.5 mV
(RMS value) on V
V

CC(RFLO)

only

CC(MIX)

, V

CC(TX)

and

∆f = 4686 kHz;

note 1

spurious signals RFLO − 3IFLO −−40 − dBc

RFLO + 2IFLO −−35 − dBc

RFLO + 5IFLO −−51 − dBc
N

TX

white noise level at the output − 135 − dBc/Hz

amb

=25°C.

−−60 − dBc

−−74 − dBc

Note

1. Including PSRR of the RFLO circuitry.

1996 Oct 22 17

Philips Semiconductors Product specification

Image reject 1800 MHz transceiver
for DECT applications

PACKAGE OUTLINE

LQFP32: plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm

c

y

X

24

25

17

Z

16

E

A

UAA2067G

SOT401-1

e

pin 1 index

32

1

e

DIMENSIONS (mm are the original dimensions)

mm

A

max.

1.60

A

1A2A3bp

0.15

1.5

1.3

0.25

0.05

UNIT

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

w M

b

p

D

H

D

cE

0.27

0.18

0.17

0.12

9

8

Z

D

B

0 2.5 5 mm

(1) (1)(1)

D

5.1

4.9

w M

b

p

v M

v M

scale

(1)

eH

H

5.1

4.9

0.5

7.15

6.85

D

E

A

B

H

E

E

7.15

6.85

A

A

LL

p

0.75

1.0

0.45

2

A

1

detail X

Z

D

0.2

0.12 0.1

0.95

0.55

(A )

3

L

p

L

Zywv θ

E

0.95

0.55

o

7

o

0

θ

OUTLINE
VERSION

SOT401-1

IEC JEDEC EIAJ

REFERENCES

1996 Oct 22 18

EUROPEAN

PROJECTION

ISSUE DATE

95-12-19
97-08-04

Philips Semiconductors Product specification

Image reject 1800 MHz transceiver
for DECT applications

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in

“IC Package Databook”

our

Reflow soldering

Reflow soldering techniques are suitable for all LQFP
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

Wave soldering is not recommended for LQFP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

(order code 9398 652 90011).

UAA2067G

If wave soldering cannot be avoided, the following
conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)
soldering technique should be used.

• The footprint must be at an angle of 45° to the board

direction and must incorporate solder thieves
downstream and at the side corners.

Even with these conditions, do not consider wave
soldering LQFP packages LQFP32 (SOT401-1),
LQFP48 (SOT313-2), LQFP64 (SOT314-2) or
LQFP80 (SOT315-1).

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1996 Oct 22 19

Philips Semiconductors Product specification

Image reject 1800 MHz transceiver

UAA2067G

for DECT applications

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Oct 22 20

Philips Semiconductors Product specification

Image reject 1800 MHz transceiver
for DECT applications

UAA2067G

NOTES

1996 Oct 22 21

Philips Semiconductors Product specification

Image reject 1800 MHz transceiver
for DECT applications

UAA2067G

NOTES

1996 Oct 22 22

Philips Semiconductors Product specification

Image reject 1800 MHz transceiver
for DECT applications

UAA2067G

NOTES

1996 Oct 22 23

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Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

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United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
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Uruguay: see South America
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Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1996 SCA52
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 647021/1200/02/pp24 Date of release: 1996 Oct 22 Document order number: 9397750 01437