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®
SMALL SIGNAL SCH OTTKY DIOD E
DESCRIPTION
Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery
time, intended for low voltage switching mode
power supply, polarity protection and high frequency circuits.
TMBYV 10-60
MELF
(Glass)
ABSOLUTE MAXIMUM RA TINGS
Symbol Parameter Value Unit
V
RRM
I
F (AV)
I
FSM
T
stg
T
T
L
Repetitive Peak Reverse Voltage 60 V
Average Forward Current
Surge non Repetitive Forward Current
Storage and Junction Temperature Range - 65 to + 150
j
Maximum Lead Temperature for Soldering during 15s 260
(limiting values)
= 25 °C
T
i
= 25 °C
T
i
= 10ms
t
p
= 25 °C
T
i
= 300µs
t
p
1A
20
Sinusoidal Pulse
40
Rectangular Pulse
- 65 to + 125
THERMAL RESISTANCE
Symbol Parameter Value Unit
R
th (j - l)
Junction-leads 110
C/W
°
A
C
°
C
°
C
°
August 1999 Ed: 1A
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TMBYV 10-60
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
*
I
R
VF*I
I
* Pulse test: t
= 25°C
T
j
= 100°C
T
j
= 1A
F
= 3A 1
F
300µs δ < 2%
≤
p
.
V
R
= V
RRM
0.5
10
= 25°C
T
j
0.7
DYNAMIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
C
= 25°C VR = 0
T
j
T
= 25°C VR = 5V
j
Forward current flow in a Schottky rectifier is due
to majority carrier conduction. S o r everse recovery
is not affected by s torage charge as in conventional
PN junction diodes.
Nevertheless, when the device switches from forward biased condition to reverse blocking state,
This current depends only of diode capacitance and
external circuit impedance. Satisfactory circuit behaviour analysis may be performed assuming that
Schottky rectifier consists of an ideal diode in parallel with a variable capacitance equal to the junction capacitance (see fig. 5 page 4/4).
150 pF
40
current is required to charge the depletion capacitance of the diode.
mA
V
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TMBYV 10-60
Figure 1. Forward current versus forward
voltage at low level (typical values).
Figure 2. Forward current versus forward
voltage at high level (typical values).
Figure 3. Reverse current versus junction
temperature.
Figure 4. Reverse current versus V
cent.
RRM
in per
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TMBYV 10-60
Figure 5. Capacitance C versus reverse
applied voltage V
(typical values)
R
Figure 6. Surge non repetitive forward current
for a rectangular pulse with t ≤ 10 ms.
Figure 7. Surge non repetitive forward current
versus number of cycles.
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PACKAGE MECHANICAL DATA
MELF Glass
TMBYV 10-60
A
D
O
/
C
C
FOOT PRINT DIMENSIONS (Millimeter)
4
6.5
DIMENSIONS
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
B
/
O
A 4.80 5.20 0.189 0.205
2.50 2.65 0.098 0.104
B
∅
C 0.45 0.60 0.018 0.024
∅
D
2.50 0.098
3
Marking: ring at cathode end.
Weight: 0.15g
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assum es no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval
of STMicroelectronic s.
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© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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