Datasheet TEA1110AT-C1, TEA1110A-C1 Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of 1996 Nov 26
File under Integrated Circuits, IC03

1997 Apr 22

INTEGRATED CIRCUITS

TEA1110A

Low voltage versatile telephone
transmission circuit with dialler
interface

1997 Apr 22 2

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1110A

FEATURES

• Low DC line voltage; operates down to 1.6 V (excluding
voltage drop over external polarity guard)

• Voltage regulator with adjustable DC voltage

• Provides a supply for external circuits

• Symmetrical high impedance inputs (64 kΩ) for

dynamic, magnetic or piezo-electric microphones

• Asymmetrical high impedance input (32 kΩ) for electret
microphones

• DTMF input with confidence tone

•

MUTE input for pulse or DTMF dialling

• Receiving amplifier for dynamic, magnetic or
piezo-electric earpieces

• AGC line loss compensation for microphone and
earpiece amplifiers.

APPLICATION

• Line powered telephone sets, cordless telephones, fax
machines, answering machines.

GENERAL DESCRIPTION

The TEA1110A is a bipolar integrated circuit that performs
all speech and line interface functions required in fully
electronic telephone sets. It performs electronic switching
between speech and dialling. The IC operates at a line
voltage down to 1.6 V DC (with reduced performance) to
facilitate the use of telephone sets connected in parallel.

All statements and values refer to all versions unless
otherwise specified.

QUICK REFERENCE DATA

I

line

= 15 mA; VEE=0V; R

SLPE

=20Ω; AGC pin connected to VEE; Z

line

= 600 Ω; f = 1 kHz; T

amb

=25°C;

unless otherwise specified.

ORDERING INFORMATION

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

line

line current operating range normal operation 11 − 140 mA

with reduced performance 1 − 11 mA

V

LN

DC line voltage 3.35 3.65 3.95 V

I

CC

internal current consumption VCC= 2.9 V − 1.1 1.4 mA

V

CC

supply voltage for peripherals IP=0mA − 2.9 − V

G

vtrx

typical voltage gain

microphone amplifier (not adjustable) V

MIC

= 4 mV (RMS) − 43.7 − dB

receiving amplifier range V

IR

= 4 mV (RMS) 19 − 33 dB

∆G

vtrx

gain control range for microphone and
receiving amplifiers with respect to
I

line

=15mA

I

line

=85mA − 5.9 − dB

∆G

vtrxm

gain reduction for microphone and
receiving amplifiers

MUTE = LOW − 80 − dB

TYPE

NUMBER

PACKAGE

NAME DESCRIPTION VERSION

TEA1110A DIP14 plastic dual in-line package; 14 leads (300 mil) SOT27-1
TEA1110AT SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1

1997 Apr 22 3

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1110A

BLOCK DIAGRAM

handbook, full pagewidth

ATT.

DTMF

AGC

CIRCUIT

CURRENT

REFERENCE

LOW VOLTAGE

CIRCUIT

IR

MIC+

MIC−

V

EE

AGC

SLPE

TEA1110A(T)

3

2811

9

10

13 12 6

14

1

5

7

GAR

QR MUTE

LN

V

CC

REG

V I

MGG736

V I

V I

V I

Fig.1 Block diagram.

1997 Apr 22 4

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1110A

PINNING

SYMBOL PIN DESCRIPTION

LN 1 positive line terminal
SLPE 2 slope (DC resistance) adjustment
REG 3 line voltage regulator decoupling
n.c. 4 not connected
DTMF 5 dual-tone multi-frequency input
MUTE 6 mute input to select speech or

dialling mode (active LOW)
IR 7 receiving amplifier input
AGC 8 automatic gain control/

line loss compensation
MIC− 9 inverting microphone amplifier input
MIC+ 10 non-inverting microphone amplifier

input
V

EE

11 negative line terminal
QR 12 receiving amplifier output
GAR 13 receive gain adjustment
V

CC

14 supply voltage for speech circuit and

peripherals

Fig.2 Pin configuration.

handbook, halfpage

MGG735

TEA1110A(T)

1
2
3
4
5
6
7

8

14
13
12
11
10

9

LN

SLPE

REG

n.c.
DTMF
MUTE

IR

AGC

MIC−

MIC+

V

EE

QR

GAR

V

CC

FUNCTIONAL DESCRIPTION

All data given in this chapter are typical values, except
when otherwise specified.

Supply (pins LN, SLPE, V

CC

and REG)

The supply for the TEA1110A and its peripherals is
obtained from the telephone line. See Fig.3.

The IC generates a stabilized reference voltage (V

ref

)

between pins LN and SLPE. V

ref

is temperature
compensated and can be adjusted by means of an
external resistor (RVA). V

ref

equals 3.35 V and can be
increased by connecting RVA between pins REG
and SLPE (see Fig.4), or decreased by connecting R

VA

between pins REG and LN. The voltage at pin REG is
used by the internal regulator to generate V

ref

and is

decoupled by C

REG

, which is connected to VEE. This
capacitor, converted into an equivalent inductance
(see Section “Set impedance”), realizes the set
impedance conversion from its DC value (R

SLPE

) to its AC
value (RCC in the audio-frequency range). The voltage at
pin SLPE is proportional to the line current.

The voltage at pin LN is:

Where:

I

line

= line current
ICC= current consumption of the IC
IP= supply current for peripheral circuits
I* = current consumed between LN and VEE.

The preferred value for R

SLPE

is 20 Ω. Changing R

SLPE

will
affect more than the DC characteristics; it also influences
the microphone and DTMF gains, the gain control
characteristics, the sidetone level and the maximum
output swing on the line.

V

LN

V

refRSLPEISLPE

×+=

I

SLPEIlineICC

– IP– I∗–=

1997 Apr 22 5

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1110A

Fig.3 Supply configuration.

handbook, full pagewidth

I

SLPE

I

sh

REG

311

LN
114

from pre amp

SLPE

2

V

EE

V

d

V

CC

R

CC

C

VCC

I

CC

C

REG

R

SLPE

V

exch

R

exch

I

line

R

line

TEA1110A

I*

I

P

peripheral

circuits

100 µF

4.7 µF

20 Ω

619 Ω

MGG737

The internal circuitry of the TEA1110A is supplied from
pin VCC. This voltage supply is derived from the line
voltage by means of a resistor (R

CC

) and must be

decoupled by a capacitor C

VCC

. It may also be used to
supply peripheral circuits such as dialling or control
circuits. The V

CC

voltage depends on the current
consumed by the IC and the peripheral circuits as shown
by the formula:

(see also Figs 5 and 6).

R

CCint

is the internal equivalent resistance of the voltage

supply, and I

rec

is the current consumed by the output

stage of the earpiece amplifier.
The DC line current flowing into the set is determined by

the exchange supply voltage (V

exch

), the feeding bridge

resistance (R

exch

), the DC resistance of the telephone line
(R

line

) and the reference voltage (V

ref

). With line currents
below 7.5 mA, the internal reference voltage (generating
V

ref

) is automatically adjusted to a lower value. This means
that more sets can operate in parallel with DC line voltages
(excluding the polarity guard) down to an absolute
minimum voltage of 1.6 V. At currents below 7.5 mA, the
circuit has limited sending and receiving levels. This is
called the low voltage area.

V

CC

V

CC0RCCintIPIrec

–()×–=

V

CC0

VLNR

CCICC

×–=

Fig.4 Reference voltage adjustment by RVA.

(1) Influence of RVA on V

ref

.

(2) V

ref

without influence of RVA.

handbook, halfpage

6.0

V

ref

(V)

3.0

4.0

(1)

(2)

5.0

RVA (Ω)

MGD176

10

5

10

4

10

6

10

7

1997 Apr 22 6

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1110A

Set impedance

In the audio frequency range, the dynamic impedance is
mainly determined by the RCC resistor. The equivalent
impedance of the circuit is illustrated in Fig.7.

Microphone amplifier (pins MIC+ and MIC−)

The TEA1110A has symmetrical microphone inputs.
The input impedance between pins MIC+ and MIC− is
64 kΩ (2 × 32 kΩ). The voltage gain from pins MIC+/MIC−
to pin LN is set at 43.7 dB (typ).

Automatic gain control is provided on this amplifier for line
loss compensation.

Receiving amplifier (pins IR, GAR and QR)

The receiving amplifier has one input (IR) and one output
(QR). The input impedance between pin IR and pin V

EE

is
20 kΩ. The voltage gain from pin IR to pin QR is set at
33 dB (typ). The gain can be decreased by connecting an
external resistor R

GAR

between pins GAR and QR; the

adjustment range is 14 dB. Two external capacitors C

GAR

(connected between GAR and QR) and C

GARS

(connected

between GAR and VEE) ensure stability. The C

GAR

capacitor provides a first-order low-pass filter. The cut-off
frequency corresponds to the time constant
C

GAR

× (R

GARint

// R

GAR

). R

GARint

is the internal resistor
which sets the gain with a typical value of 125 kΩ.
The condition C

GARS

=10×C

GAR

must be fulfilled to

ensure stability.
The output voltage of the receiving amplifier is specified for

continuous wave drive. The maximum output swing
depends on the DC line voltage, the RCC resistor, the I

CC

current consumption of the circuit, the IP current
consumption of the peripheral circuits and the load
impedance.

Automatic gain control is provided on this amplifier for line
loss compensation.

Automatic gain control (pin AGC)

The TEA1110A performs automatic line loss
compensation. The automatic gain control varies the gain
of the microphone amplifier and the gain of the receiving
amplifier in accordance with the DC line current.
The control range is 5.9 dB (which corresponds
approximately to a line length of 5 km for a 0.5 mm
diameter twisted-pair copper cable with a DC resistance of
176 Ω/km and an average attenuation of 1.2 dB/km).
The IC can be used with different configurations of feeding
bridge (supply voltage and bridge resistance) by
connecting an external resistor R

AGC

between pins AGC

and V

EE

. This resistor enables the I

start

and I

stop

line

currents to be increased (the ratio between I

start

and I

stop

is
not affected by the resistor). The AGC function is disabled
when pin AGC is left open-circuit.

Mute function (pin

MUTE)

The mute function performs the switching between the
speech mode and the dialling mode. WhenMUTE is LOW,
the DTMF input is enabled and the microphone and
receiving amplifiers inputs are disabled. When MUTE is
HIGH, the microphone and receiving amplifiers inputs are
enabled while the DTMF input is disabled. A pull-up
resistor is included at the input.

DTMF amplifier (pin DTMF)

When the DTMF amplifier is enabled, dialling tones may
be sent on line. These tones can be heard in the earpiece
at a low level (confidence tone).

The TEA1110A has an asymmetrical DTMF input.
The input impedance between DTMF and V

EE

is 20 kΩ.

The voltage gain from pin DTMF to pin LN is 25.3 dB.
The automatic gain control has no effect on the DTMF

amplifier.

Fig.5 Typical current IP available from VCC for

peripheral circuits at I

line

= 15 mA.

(1) With RVA resistor.
(2) Without RVA resistor.

handbook, halfpage

2.5

0

01234

MBE783

0.5

1

1.5

2

VCC (V)

(1)(2)

I

P

(mA)

1997 Apr 22 7

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1110A

Fig.6 VCC supply voltage for peripherals.

handbook, halfpage

PERIPHERAL

CIRCUIT

I

P

I

rec

R

CCintVCC

V

EE

V

CCO

MBE792

Fig.7 Equivalent impedance between LN and VEE.

Leq=C

REG

× R

SLPE

× RP.
RP= internal resistance.
RP= 15.5kΩ.

handbook, halfpage

LN

V

EE

SLPE

R

SLPE

C

REG

REG V

CC

R

CC

4.7 µF

100 µF

C

VCC

619 Ω

20 Ω

R

P

V

ref

L

EQ

MBE788

SIDETONE SUPPRESSION

The TEA1110A anti-sidetone network comprising
RCC//Z

line

, R

ast1

, R

ast2

, R

ast3

, R

SLPE

and Z

bal

(see Fig.8 )
suppresses the transmitted signal in the earpiece.
Maximum compensation is obtained when the following
conditions are fulfilled:

The scale factor k is chosen to meet the compatibility with
a standard capacitor from the E6 or E12 range for Z

bal

.

In practice, Z

line

varies considerably with the line type and

the line length. Therefore, the value of Z

bal

should be for an
average line length which gives satisfactory sidetone
suppression with short and long lines. The suppression
also depends on the accuracy of the match between Z

bal

and the impedance of the average line.
The anti-sidetone network for the TEA1110A (as shown in

Fig.12) attenuates the receiving signal from the line by
32 dB before it enters the receiving amplifier.
The attenuation is almost constant over the whole audio
frequency range.

A Wheatstone bridge configuration (see Fig.9) may also
be used.

More information on the balancing of an anti-sidetone
bridge can be obtained in our publication

“Applications

Handbook for Wired Telecom Systems, IC03b”

, order

number 9397 750 00811.

R

SLPERast1

× R

CC

R

ast2Rast3

+()×=

k

R

ast2

R

ast3RSLPE

+()×()

R

ast1RSLPE

×()

-----------------------------------------------------------------------

=

Z

bal

kZ

line

×=

1997 Apr 22 8

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1110A

Fig.8 Equivalent circuit of TEA1110A family anti-sidetone bridge.

handbook, full pagewidth

MBE787

I

m

Z

ir

IR

R

ast1

R

ast3

R

ast2

SLPE

R

SLPE

V

EE

Z

line

R

CC

LN

Z

bal

Fig.9 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration.

handbook, full pagewidth

MBE786

I

m

Z

ir

IR

Z

bal

R

ast1

SLPE

R

SLPE

V

EE

Z

line

R

CC

LN

R

A

1997 Apr 22 9

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1110A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

HANDLING

This device meets class 2 ESD test requirements [Human Body Model (HBM)], in accordance with

“MIL STD 883C - method 3015”

.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

LN

positive continuous line voltage VEE− 0.4 12 V
repetitive line voltage during switch-on or

line interruption

V

EE

− 0.4 13.2 V

V

n(max)

maximum voltage on all pins VEE− 0.4 VCC+ 0.4 V

I

line

line current R

SLPE

=20Ω;

see Figs 10 and 11

− 140 mA

P

tot

total power dissipation T

amb

=75°C;

see Figs 10 and 11

TEA1110A − 588 mW
TEA1110AT − 384 mW

T

stg

storage temperature −40 +125 °C

T

amb

operating ambient temperature −25 +75 °C

SYMBOL PARAMETER VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air;
mounted on epoxy board 40.1 × 19.1 × 1.5 mm (TEA1110A)

85 K/W

thermal resistance from junction to ambient in free air;
mounted on epoxy board 40.1 × 19.1 × 1.5 mm (TEA1110AT)

130 K/W

1997 Apr 22 10

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1110A

Fig.10 SO14 Safe operating area (TEA1110AT).

handbook, halfpage

212

150

30

70

110

MBH275

46810

130

90

50

I

line

(mA)

V

LNVSLPE

(V)

(3)
(4)

(2)

(1)

(1) T

amb

=45°C; P

tot

= 0.615W.

(2) T

amb

=55°C; P

tot

= 0.538W.

(3) T

amb

=65°C; P

tot

= 0.461W.

(4) T

amb

=75°C; P

tot

= 0.384W.

Fig.11 DIP14 Safe operating area (TEA1110A).

(1) T

amb

=35°C; P

tot

= 1.058W.

(2) T

amb

=45°C; P

tot

= 0.941W.

(3) T

amb

=55°C; P

tot

= 0.823W.

(4) T

amb

=65°C; P

tot

= 0.705W.

(5) T

amb

=75°C; P

tot

= 0.588W.

handbook, halfpage

212

150

30

70

110

MGD859

46810

130

90

50

I

line

(mA)

V

LN

_

V

SLPE

(V)

(2)

(3)

(1)

(4)
(5)

1997 Apr 22 11

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1110A

CHARACTERISTICS

I

line

= 15 mA; VEE=0V; R

SLPE

=20Ω; AGC pin connected to VEE; Z

line

= 600 Ω; f = 1 kHz; T

amb

=25°C;

unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies (pins V

LN

, VCC, SLPE and REG)

V

ref

stabilized voltage between LN and
SLPE

3.1 3.35 3.6 V

V

LN

DC line voltage I

line

=1mA − 1.6 − V

I

line

=4mA − 2.3 − V

I

line

= 15 mA 3.35 3.65 3.95 V

I

line

= 140 mA −−6.9 V

V

LN(exR)

DC line voltage with an external
resistor R

VA

R

VA(SLPE−REG)

=27kΩ− 4.4 − V

∆V

LN(T)

DC line voltage variation with
temperature referred to 25 °C

T

amb

= −25 to +75 °C −±30 − mV

I

CC

internal current consumption VCC= 2.9 V − 1.1 1.4 mA

V

CC

supply voltage for peripherals IP=0mA − 2.9 − V

R

CCint

equivalent supply voltage resistance IP= 0.5 mA − 550 620 Ω

Microphone amplifier (pins MIC+ and MIC−)
Z

i

 input impedance

differential between pins
MIC+ and MIC−

− 64 − kΩ

single-ended between pins
MIC+/MIC− and V

EE

− 32 − kΩ

G

vtx

voltage gain from MIC+/MIC− to LN V

MIC

= 4 mV (RMS) 42.7 43.7 44.7 dB

∆G

vtx(f)

gain variation with frequency
referred to 1 kHz

f = 300 to 3400 Hz −±0.2 − dB

∆G

vtx(T)

gain variation with temperature
referred to 25 °C

T

amb

= −25 to +75 °C −±0.3 − dB

CMRR common mode rejection ratio − 80 − dB
V

LN(max)(rms)

maximum sending signal
(RMS value)

I

line

= 15 mA; THD = 2% 1.4 1.7 − V

I

line

= 4 mA, THD = 10% − 0.8 − V

V

notx

noise output voltage at pin LN; pins
MIC+/MIC− shorted through 200 Ω

psophometrically
weighted (P53 curve)

−−78.5 − dBmp

Receiving amplifier (pins IR, QR and GAR)

Z

i

 input impedance − 20 − kΩ

G

vrx

voltage gain from IR to QR VIR= 4 mV (RMS) 32 33 34 dB

∆G

vrx(f)

gain variation with frequency
referred to 1 kHz

f = 300 to 3400 Hz −±0.2 − dB

∆G

vrx(T)

gain variation with temperature
referred to 25 °C

T

amb

= −25 to +75 °C −±0.3 − dB

1997 Apr 22 12

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1110A

∆G

vrxr

gain voltage reduction range external resistor

connected between
GAR and QR

−−14 dB

V

o(rms)

maximum receiving signal (RMS
value)

IP= 0 mA sine wave
drive; RL= 150 Ω;
THD = 2%

− 0.25 − V

I

P

= 0 mA sine wave
drive; RL= 450 Ω;
THD = 2%

− 0.35 − V

V

norx(rms)

noise output voltage at pin QR
(RMS value)

G

vrx

= 33 dB;
IR open-circuit;
RL= 150 Ω;
psophometrically
weighted (P53 curve)

−−87 − dBVp

Automatic gain control (pin AGC)

∆G

vtrx

gain control range for microphone
and receiving amplifiers with respect
to I

line

=15mA

I

line

=85mA − 5.9 − dB

I

start

highest line current for maximum
gain

− 23 − mA

I

stop

lowest line current for minimum gain − 56 − mA

DTMF amplifier (pin DTMF)

Zi input impedance − 20 − kΩ
G

vdtmf

voltage gain from DTMF to LN V

DTMF

= 20 mV (RMS);

MUTE = LOW

24.1 25.3 26.5 dB

∆G

vdtmf(f)

gain variation with frequency
referred to 1 kHz

f = 300 to 3400 Hz −±0.2 − dB

∆G

vdtmf(T)

gain variation with temperature
referred to 25 °C

T

amb

= −25 to +75 °C −±0.4 − dB

G

vct

voltage gain from DTMF to QR
(confidence tone)

V

DTMF

= 20 mV (RMS);

RL= 150 Ω

−−15 − dB

Mute function (pin

MUTE)

V

IL

LOW level input voltage VEE− 0.4 − VEE+ 0.3 V

V

IH

HIGH level input voltage VEE+ 1.5 − VCC+ 0.4 V

I

MUTE

input current 1.5 µA

∆G

vtrxm

gain reduction for microphone and
receiving amplifiers

MUTE = LOW 80 dB

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1997 Apr 22 13

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1110A

APPLICATION INFORMATION

ndbook, full pagewidth

telephone

line

4 ×

BAS11

a/b

b/a

VDR

95 V

BZX79C10

BZX79C10

R

ast1

R

protect

130 kΩ

390 Ω

R

ast2

R

ast3

3.92 kΩ

Z

bal

C

IR

C

GAR

C

GARS

10 Ω

IR

BF473

BSN254

BC547

BC558

BC547

PD

input

R

pd4

470 kΩ

R

pd5

470 kΩ

R

pd3

1 MΩ

R

pd2

470 kΩ

R

pd6

68 kΩ

QR

GAR

MIC+

MIC−

signal from

dial and

control circuits

C

VCC

supply for

peripheral

circuits

RCC619 Ω

R

SLPE

R

limit



3.9 Ω

C

REG

20 Ω

R

pd1

470 kΩ

V

CC

DTMF

MUTE

LN

SLPE REG AGC

V

EE

TEA1110A(T)

100 µF

1 nF

100 pF

4.7 µF

MGG738

Fig.12 Typical application of the TEA1110A in sets with Pulse Dialling or Flash facilities.

1997 Apr 22 14

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1110A

PACKAGE OUTLINES

UNIT

A

max.

A

1

A2A

3

b

p

cD

(1)E(1)

(1)

eHELLpQZywv θ

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

inches

1.75

0.25

0.10

1.45

1.25

0.25

0.49

0.36

0.25

0.19

8.75

8.55

4.0

3.8

1.27

6.2

5.8

0.7

0.6

0.7

0.3

8
0

o
o

0.25 0.1

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

1.0

0.4

SOT108-1

X

w M

θ

A

A

1

A

2

b

p

D

H

E

L

p

Q

detail X

E

Z

e

c

L

v M

A

(A )

3

A

7

8

1

14

y

076E06S MS-012AB

pin 1 index

0.069

0.0098

0.0039

0.057

0.049

0.01

0.019

0.014

0.0098

0.0075

0.35

0.34

0.16

0.15

0.050

1.05

0.041

0.24

0.23

0.028

0.024

0.028

0.012

0.01

0.25

0.01 0.004

0.039

0.016

91-08-13
95-01-23

0 2.5 5 mm

scale

SO14: plastic small outline package; 14 leads; body width 3.9 mm

SOT108-1

1997 Apr 22 15

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1110A

UNIT

A

max.

1 2

(1) (1)

b

1

cD

(1)

Z

Ee M

H

L

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

inches

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

SOT27-1

92-11-17
95-03-11

A

min.

A

max.

b

max.

w

M

E

e

1

1.73

1.13

0.53

0.38

0.36

0.23

19.50

18.55

6.48

6.20

3.60

3.05

0.2542.54 7.62

8.25

7.80

10.0

8.3

2.24.2 0.51 3.2

0.068

0.044

0.021

0.015

0.77

0.73

0.014

0.009

0.26

0.24

0.14

0.12

0.010.10 0.30

0.32

0.31

0.39

0.33

0.0870.17 0.020 0.13

050G04 MO-001AA

M

H

c

(e )

1

M

E

A

L

seating plane

A

1

w M

b

1

e

D

A

2

Z

14

1

8

7

b

E

pin 1 index

0 5 10 mm

scale

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

DIP14: plastic dual in-line package; 14 leads (300 mil)

SOT27-1

1997 Apr 22 16

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1110A

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

(order code 9398 652 90011).

DIP

S

OLDERING BY DIPPING OR BY WA VE

The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T

stg max

). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

R

EPAIRING SOLDERED JOINTS

Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.

SO

REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO

packages.
Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

W

AVE SOLDERING

Wave soldering techniques can be used for all SO
packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• The package footprint must incorporate solder thieves at
the downstream end.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

R

EPAIRING SOLDERED JOINTS

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1997 Apr 22 17

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1110A

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

1997 Apr 22 18

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1110A

NOTES

1997 Apr 22 19

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

TEA1110A

NOTES

Internet: http://www.semiconductors.philips.com

Philips Semiconductors – a worldwide company

© Philips Electronics N.V. 1997 SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

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Printed in The Netherlands 417027/1200/02/pp20 Date of release: 1997 Apr 22 Document order number: 9397 75002077