Page 1
DATA SH EET
Product specification
File under Integrated Circuits, IC01
May 1992
INTEGRATED CIRCUITS
TDA1514A
50 W high performance hi-fi
amplifier
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May 1992 2
Philips Semiconductors Product specification
50 W high performance hi-fi amplifier TDA1514A
GENERAL DESCRIPTION
The TDA1514A integrated circuit is a hi-fi power amplifier for use as a building block in radio, tv and other audio
applications. The high performance of the IC meets the requirements of digital sources (e.g. Compact Disc equipment).
The circuit is totally protected, the two output transistors both having thermal and SOAR protection (see Fig.3). The circuit
also has a mute function that can be arranged for a period after power-on with a delay time fixed by external components.
The device is intended for symmetrical power supplies but an asymmetrical supply may also be used.
Features
• High output power
• Low harmonic distortion
• Low intermodulation distortion
• Low offset voltage
• Good ripple rejection
• Mute/stand-by facilities
• Thermal protection
• Protected against electrostatic discharge
• No switch-on or switch-off clicks
• Very low thermal resistance
• Safe Operating Area (SOAR) protection.
QUICK REFERENCE DATA
PACKAGE OUTLINE
9-lead SIL, plastic power (SOT131R); SOT131-2; 1996 July 19.
PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
Supply voltage range
(pin 6 to pin 4) V
P
± 10 −±30 V
Total quiescent current V
P
= ± 27.5 V I
tot
− 56 − mA
Output power THD = −60 dB;
V
P
= ± 27.5 V;
R
L
= 8 Ω P
o
− 40 − W
V
P
= ± 23 V;
R
L
= 4 Ω P
o
− 48 − W
Closed loop voltage gain determined
externally G
c
− 30 − dB
Input resistance determined
externally R
i
− 20 − kΩ
Signal plus noise-to-noise ratio P
o
= 50 mW (S+N)/N − 83 − dB
Supply voltage ripple
rejection f = 100 Hz SVRR − 64 − dB
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Philips Semiconductors Product specification
50 W high performance hi-fi amplifier TDA1514A
Fig.1 Block diagram.
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May 1992 4
Philips Semiconductors Product specification
50 W high performance hi-fi amplifier TDA1514A
RATINGS
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
PARAMETER SYMBOL MIN. MAX. UNIT
Supply voltage (pin 6 to pin 4) V
P
−± 30 V
Bootstrap voltage (pin 7 to pin 4) V
bstr
− 70 V
Output current (repetitive peak) I
o
− 8A
Operating ambient temperature range T
amb
see Fig.2
Storage temperature range T
stg
−55 + 150 °C
Power dissipation see Fig.2
Thermal shut-down protection time t
pr
− 1 hour
Mute voltage (pin 3 to pin 4) V
m
− 7.25 V
THERMAL RESISTANCE
From junction to mounting base R
th j-mb
1 K/W
Fig.2 Power derating curve.
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Philips Semiconductors Product specification
50 W high performance hi-fi amplifier TDA1514A
The theoretical maximum power dissipation for Po = 40 W with a stabilized power supply is:
where V
P
= ± 27.5 V; RL=8Ω
Considering, for example, a maximum ambient temperature of 50 °C and a maximum junction temperature of 150 °C the
total thermal resistance is:
Since the thermal resistance of the SOT131A encapsulation is R
th j-mb
< 1 K/W, the thermal resistance required of the
heatsink is R
th h-a
< 4.3 K/W.
SAFE OPERATING AREA (SOAR) PROTECTION
V
2
P
2π2R
L
---------------- -
19 W;=
R
th j-a
150 50–
19
----------------------
5.3 K/W==
Fig.3 SOAR protection curve.
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Philips Semiconductors Product specification
50 W high performance hi-fi amplifier TDA1514A
CHARACTERISTICS
V
P
= ± 27.5 V; RL= 8 Ω; f = 1 kHz; T
amb
= 25 °C; test circuit as Fig.4; unless otherwise specified.
PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
Supply voltage range
(pin 6 to pin 4) V
P
± 10 −± 30 V
Maximum output current
(peak value) I
OM max
6.4 −−A
Operating state
Voltage (pins 3 to 4) V
3-4
6 − 7.25 V
Total quiescent current R
L
= ∞ I
tot
30 56 90 mA
Output power THD = −60 dB P
o
37 40 − W
THD = −20 dB P
o
− 51 − W
Output power V
P
= ± 23 V;
THD = −60 dB
RL = 8 Ω P
o
− 28 − W
R
L
= 4 Ω P
o
− 48 − W
Total harmonic distortion P
o
= 32 W THD −−90 −80 dB
Intermodulation distortion P
o
= 32 W
note 1 d
im
−−86 − dB
Power bandwidth (−3 dB);
THD = −60 dB B − 20 to
25 000 Hz
Slew rate dV/dt − 14 − V/µs
Closed loop voltage gain note 2 G
c
− 30 − dB
Open loop voltage gain G
o
− 89 − dB
Input impedance note 3 |Z
i
|1−−MΩ
Signal-to-noise ratio note 4
P
o
= 50 mW S/N 80 83 − dB
Output offset voltage V
o
− 7 200 mV
Input bias current I
I
− 0.1 1.0 µA
Output impedance |Z
o
| −− 0.1 Ω
Supply voltage ripple
rejection note 5 SVRR 58 64 − dB
Quiescent current into pin 2 note 6 I
2
− 0.1 −µA
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Philips Semiconductors Product specification
50 W high performance hi-fi amplifier TDA1514A
Notes to the characteristics
1. Measured with two superimposed signals of 50 Hz and 7 kHz with an amplitude relationship of 4 : 1.
2. The closed loop gain is determined by external resistors (Fig.4, R2 and R3) and is variable between 20 and 46 dB.
3. The input impedance in the test circuit (Fig.4) is determined by the bias resistor R1.
4. The noise output voltage is measured in a bandwidth of 20 Hz to 20 kHz with a source resistance of 2 kΩ.
5. f = 100 Hz; RS= 2 kΩ; ripple voltage = 500 mV
(eff)
on positive and negative supply.
6. The quiescent current into pin 2 has an impact on the mute time.
7. Without bootstrap.
Mute state
Voltage on pin 3 V
3-4
2 − 4.5 V
Offset voltage V
o
− 30 200 V
Output voltage V
i(rms)
= 1 V
f = 1 kHz V
o
− 450 −µV
Ripple rejection note 5 RR − 60 − dB
Standby state
Voltage on pin 3 V
3-4
0 − 0.9 V
Total quiescent current I
tot
− 18 25 mA
Ripple rejection notes 5 and 7 RR − 60 − dB
Supply voltage to obtain
standby state ± V
P
5.0 − 7.0 V
PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
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May 1992 8
Philips Semiconductors Product specification
50 W high performance hi-fi amplifier TDA1514A
(1) Mounting base to connected to −VP.
(2) When used without a bootstrap these components are disconnected and pin 6 is connected to
pin 7 thus decreasing the output power by approximately 4 W.
(3) When R
L
= 4 Ω: R4 = 47 Ω and R5 = 82 Ω.
Fig.4 Application and test circuit.
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May 1992 9
Philips Semiconductors Product specification
50 W high performance hi-fi amplifier TDA1514A
PACKAGE OUTLINE
UNIT A
b
max.
b
p2
cD
(1)
E
(1)
Z
(1)
deD
h
Lj
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
mm
4.6
4.2
1.1
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
10 2.54
12.2
11.8
3.4
3.1
A
max.
1
2.0
E
h
6
2.00
1.45
2.1
1.8
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
17.2
16.5
SOT131-2
92-11-17
95-03-11
0 5 10 mm
scale
Q
0.25w0.03
x
D
L
A
E
c
A
2
Q
w M
b
p
d
D
Z
e
x
h
19
E
h
non-concave
seating plane
1
b
j
SIL9P: plastic single in-line power package; 9 leads
SOT131-2
view B: mounting base side
B
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May 1992 10
Philips Semiconductors Product specification
50 W high performance hi-fi amplifier TDA1514A
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
“IC Package Databook”
(order code 9398 652 90011).
Soldering by dipping or by wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
stg max
). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Repairing soldered joints
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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