Datasheet TDA1517ATW Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TDA1517ATW

8 W BTL or 2 × 4 W SE power
amplifier

Product specification
Supersedes data of 2001 Feb 14
File under Integrated Circuits, IC01

2001 Apr 17

Philips Semiconductors Product specification

8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW

FEATURES

• Requires very few external components

• Flexibility in use: mono Bridge-Tied Load (BTL) and

stereo Single-Ended (SE); it should be noted that in
stereo applications the outputs of both amplifiers are in
opposite phase

• High output power

• Low offset voltage at output (important for BTL)

• Electrostatic discharge protection

• Thermal protection

• Reverse polarity safe

• Capable of handling high energy on outputs (VP=0V)

• No switch-on/switch-off plop

• Low thermal resistance.

GENERAL DESCRIPTION

• Fixed gain

• Good ripple rejection

• Mode select switch (operating, mute and standby)

• AC and DC short-circuit safe to ground and V

P

The TDA1517ATW is an integrated class-AB output
amplifier contained in a plastic heatsink thin shrink small
outline package (HTSSOP20). The device is primarily
developed for multimedia applications.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

P

I

ORM

I

q(tot)

I

stb

supply voltage 6 12 18 V
repetitive peak output current −−2.5 A
total quiescent current − 40 80 mA
standby current − 0.1 100 µA

SE application

P

o

SVRR supply voltage ripple rejection R

α

cs

V

n(o)

 input impedance 50 −−kΩ

Z

i

output power THD = 10%; RL=4Ω−4−W

=0Ω 46 −−dB

S

channel separation RS=10kΩ 40 55 − dB
noise output voltage RS=0Ω−50 −µV

BTL application

P

o

SVRR supply voltage ripple rejection R

 output offset voltage −−150 mV

∆V

OO

V

n(o)(offset)

Z

 input impedance 25 −−kΩ

i

output power THD = 10%; RL=8Ω−8−W

=0Ω 50 −−dB

S

noise output offset voltage RS=0Ω−70 −µV

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

TDA1517ATW HTSSOP20 plastic, heatsink thin shrink small outline package; 20 leads; body

width 4.4 mm

2001 Apr 17 2

SOT527-1

Philips Semiconductors Product specification

8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW

BLOCK DIAGRAM

handbook, full pagewidth

non-inverting

input 1

SVRR

V

P1VP2

15

16

3

60
kΩ

2

kΩ

standby

switch

VA

x 1

5

+

−

+

−

15 kΩ

15 kΩ

mute switch

VA

18 kΩ

V

P

+
+

−

mute
reference
voltage

C

m

8

OUT1a

9

OUT1b

power stage

TDA1517ATW

17

MODE
1
2

mute
switch

standby
reference
voltage

6
7

14
19
20

not
connected

18 kΩ

−
+

VA

−
+

mute switch

4

SGND PGND1 PGND2

inverting

input 2

2

kΩ

18

60
kΩ

input
reference
voltage

Fig.1 Block diagram.

2001 Apr 17 3

12

OUT2a

13

OUT2b

C

m

power stage

10 11

MGU303

Philips Semiconductors Product specification

8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW

PINNING

SYMBOL PIN DESCRIPTION

n.c. 1 not connected
n.c. 2 not connected
IN1+ 3 non-inverting input 1
SGND 4 signal ground
SVRR 5 supply voltage ripple rejection
n.c. 6 not connected
n.c. 7 not connected
OUT1a 8 output 1a
OUT1b 9 output 1b
PGND1 10 power ground 1
PGND2 11 power ground 2
OUT2a 12 output 2a
OUT2b 13 output 2b
n.c. 14 not connected
V

P1

V

P2

15 supply voltage 1

16 supply voltage 2
MODE 17 mode select switch
IN2− 18 inverting input 2
n.c. 19 not connected
n.c. 20 not connected

handbook, halfpage

1

n.c.

2

n.c.

3

IN1+

4

SGND

5

SVRR

OUT1a
OUT1b

PGND1

n.c.
n.c.

10

TDA1517ATW

6
7
8
9

Fig.2 Pin configuration.

MGU302

20
19
18
17
16
15
14
13
12
11

n.c.
n.c.
IN2−
MODE
V

P2

V

P1

n.c.
OUT2b
OUT2a
PGND2

FUNCTIONAL DESCRIPTION

The TDA1517ATW contains two identical amplifiers with differential input stages. This device can be used for
Bridge-Tied Load(BTL) or Single-Ended (SE) applications. The gain of each amplifier is fixed at 20 dB. A special feature
of this device is the mode select switch. Since this pin has a very low input current (<40 µA), a low cost supply switch
can be used. With this switch the TDA1517ATW can be switched into three modes:

• Standby: low supply current

• Mute: input signal suppressed

• Operating: normal on condition.

2001 Apr 17 4

Philips Semiconductors Product specification

8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT.

V

P

V

PSC

V

rp

ERG

o

I

OSM

I

ORM

P

tot

T

vj

T

stg

T

amb

THERMAL CHARACTERISTICS

supply voltage − 18 V
AC and DC short-circuit-safe voltage − 18 V
reverse polarity voltage − 6V
energy handling capability at outputs VP=0V − 200 mJ
non-repetitive peak output current − 4A
repetitive peak output current − 2.5 A
total power dissipation − 5W
virtual junction temperature − 150 °C
storage temperature −55 +150 °C
ambient temperature −40 +85 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

tbf −−

DC CHARACTERISTICS

VP= 12 V; T

=25°C; measured in Fig.3; unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

V

P

I

q

supply voltage note 1 6.0 12 18 V
quiescent current RL= ∞−40 80 mA

Operating condition

V

MODE(oper)

I

MODE(oper)

V

O

∆V

OO

mode switch voltage level 8.5 − V
mode switch current V

=12V − 15 40 µA

MODE

DC output voltage − 5.7 − V

 DC output offset voltage −−150 mV

P

V

Mute condition

V

MODE(mute)

V

O

∆V

OO

mode switch voltage level 3.3 − 6.4 V
DC output voltage − 5.7 − V

 DC output offset voltage −−150 mV

Standby condition

V

MODE(stb)

I

stb

mode switch voltage level 0 − 2V
standby current − 0.1 100 µA

Note

1. The circuit is DC adjusted at V

= 6 to 18 V and AC operating at VP= 8.5 to 18 V.

P

2001 Apr 17 5

Philips Semiconductors Product specification

8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW

AC CHARACTERISTICS

VP= 12 V; f = 1 kHz; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

SE application; note 1

P

o

output power note 2

THD total harmonic distortion P
f

ro(L)

f

ro(H)

G

V

∆G

 channel balance −−1dB

V

low frequency roll-off −1 dB; note 3 − 25 − Hz
high frequency roll off −1dB 20 −−kHz
voltage gain 19 20 21 dB

SVRR supply voltage ripple rejection note 4

Z

 input impedance 50 60 75 kΩ

i

V

n(o)(rms)

α

cs

V

o(mote)

noise output voltage (RMS value) note5

channel separation RS=10kΩ 40 55 − dB

output voltage in mute note 7 −−2mV
BTL application; note 8
P

O

output power note 2

THD total harmonic distortion P
f

ro(L)

f

ro(H)

G

V

low frequency roll-off −1 dB; note 3 − 25 − Hz

high frequency roll off −1dB 20 −−kHz

voltage gain 25 26 27 dB
SVRR supply voltage ripple rejection note 4

Z

 input impedance 25 30 38 kΩ

i

V

n(o)(rms)

V

o(mute)

noise output voltage (RMS value) note5

output voltage in mute note 7 −−2mV

=25°C; unless otherwise specified.

amb

THD = 1% 2.5 3.3 − W
THD = 10% 3 4 − W

=1W − 0.1 − %

o

on 46 −−dB
mute 46 −−dB
standby 80 −−dB

on; R

=0Ω−50 −µV

S

on; R

=10kΩ−70 100 µV

S

mute; note 6 − 50 −µV

THD = 1% 5 6.6 − W
THD = 10% 6.5 8.0 − W

=1W − 0.03 − %

o

on 50 −−dB
mute 50 −−dB
standby 80 −−dB

on; R
on; R

=0Ω−70 −µV

S

=10kΩ−100 200 µV

S

mute; note 6 − 60 −µV

2001 Apr 17 6

Philips Semiconductors Product specification

8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW

Notes to the characteristics

1. RL=4Ω, measured in Fig.4.

2. Output power is measured directly at the output pins of the IC.

3. Frequency response externally fixed.

4. V

ripple=Vripple(max)

5. Noise voltage measured in a bandwidth of 20 Hz to 20 kHz.

6. Noise output voltage independent of RS.

7. Vi=V

= 1 V (RMS).

i(max)

8. RL=8Ω, measured in Fig.3.

APPLICATION INFORMATION

= 2 V (p-p); RS=0Ω.

handbook, full pagewidth

On
Mute
Standby

µc1

MICRO-

CONTROLLER

µc1

µc2

µc2

0
0
1

V

100

TDA1517ATW

3

R

i

60 kΩ

470 nF

+IN1

V

CC

MODE

18

17

15 kΩ

5

15 kΩ

10 kΩ

8.2
kΩ

0
1
0

R

i

60 kΩ

STANDBY/

MUTE LOGIC

reference

voltage

15

V

CC

input

41011

SGND

16

A

B

SHORT CIRCUIT

AND

TEMPERATURE

PROTECTION

PGND

nF

8

+OUT

9

12

−OUT

13

MGU304

1000
µF

R

L

8 Ω

CC

Fig.3 BTL application block diagram.

2001 Apr 17 7

Philips Semiconductors Product specification

8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW

handbook, full pagewidth

On
Mute
Standby

µc1

MICRO-

CONTROLLER

µc1

µc2

µc2

0
0
1

V

100

TDA1517ATW

MODE

3

18

17

5

STANDBY/

MUTE LOGIC

15 kΩ

15 kΩ

60 kΩ

60 kΩ

R

i

R

i

reference

voltage

220 nF

IN1+

220 nF

IN2−

V

CC

10 kΩ

8.2
kΩ

100

µF

0
1
0

15

V

CC

input

41011

SGND

16

A

B

SHORT CIRCUIT

AND

TEMPERATURE

PROTECTION

PGND

nF

8
9

12
13

1000 µF

+OUT

1000 µF

−OUT

MGU305

1000
µF

CC

R
4 Ω

R
4 Ω

L

L

Fig.4 SE application block diagram.

Test conditions

T

=25°C; unless otherwise specified: VP= 12 V, BTL

amb

application, f = 1 kHz, RL=8Ω, fixed gain = 26 dB, audio
band-pass: 22 Hz to 22 kHz. In the figuresas afunction of
frequency a band-pass of 10 Hz to 80 kHz was applied.

The BTL application block diagram is shown in Fig.3. The
PCB layout [which accommodates both the mono (BTL)
and stereo (single-ended) application] is shown in Fig.6.

Printed-Circuit Board (PCB) layout and grounding

For high system performance levels certain grounding
techniques are imperative. The input reference grounds
have to be tied to their respective source grounds and
must have separate traces from the power ground traces;
this will separate the large (output) signal currents from
interfering with the small AC input signals. The small
signal ground tracesshould be located physically asfar as
possible from the powerground traces. Supply and output
traces should be as wide as possible for delivering
maximum output power.

Proper supply bypassing is critical for low noise
performance and high power supply rejection. The
respective capacitor locations should be as close as
possible to the device and grounded to the power ground.
Decoupling the power supply also prevents unwanted
oscillations. For suppressing higher frequency transients
(spikes) on the supply line a capacitor with low ESR
(typical0.1 µF) has to beplacedasclose as possibletothe
device. For suppressing lower frequency noise and ripple
signals, a large electrolytic capacitor (e.g. 1000 µF or
greater) must be placed close to the IC.

In single-ended (stereo) application a bypass capacitor
connected to pin SVR reduces the noise and ripple on the
midrail voltage. For good THD and noise performance a
low ESR capacitor is recommended.

Input configuration

It should be noted that the DC level of the input pins is
approximately 2.1 V; a coupling capacitor is therefore
necessary.

2001 Apr 17 8

Philips Semiconductors Product specification

8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW

The formula for the cut-off frequency at the input is as
follows:

f

thus

f

=

IC

------------------------------------------------------------------------------

IC

2 π× 30× 103–× 470× 109–×

1

------------------------------

2 π× RiC

×

i

1

11 Hz==

As can be seen it is not necessary to use high capacitor
values for the input; so the delay during switch-on, which
is necessary for charging the input capacitors, can be
minimized. This results in a good low frequency response
and good switch-on behaviour.

In stereo applications (single-ended) coupling capacitors
on both input and outputare necessary.It shouldbe noted
that the outputs of both amplifiers are in opposite phase.

Built-in protection circuits

The IC contains two types of protection circuits:

• Short-circuits the outputs to ground, the supply to
groundand across theload: short-circuit isdetectedand
controlled by a SOAR protection circuit

• Thermal shut-down protection: the junctiontemperature
ismeasured byatemperature sensor.Thermal foldback
is activated at a junction temperature of >150 °C.

Output power

The output poweras a function of supplyvoltage hasbeen
measured on the output pins and at THD = 10%. The
maximum output power is limited by the maximum
allowable power dissipation and the maximum available
output current, 2.5 A repetitive peak current.

Supply voltage ripple rejection

The SVRR has been measured without an electrolytic
capacitor on pin 5 and at a bandwidth of 10 Hz to 80 kHz.
Thecurves foroperatingand mutecondition(respectively)
were measured with R

=0Ω. Only in single-ended

source

applications is an electrolytic capacitor (e.g. 100 µF) on
pin 5 necessary to improve the SVRR behaviour.

Headroom

Atypical musicCD requires atleast 12 dB (isfactor 15.85)
dynamic headroom (compared with the average power
output) for passing the loudest portions without distortion.
The following calculation can be made for this application
at VP= 12 V and RL=8Ω: Po at THD = 0.1% is
approximately 5 W (see Fig.7).

Average listening level without any distortion yields:

P

P

ALL

tot

---------------- ­factor

5

-------------- -

15.85

315 mW===

The power dissipation canbe derived from Fig.11 for 0 dB
and 12 dB headroom.

Table 1 Power rating

RATING HEADROOM

=5W

P

o

(THD = 0.1%)

0 dB 3.5 W

12 dB 2.0 W

POWER

DISSIPATION

Thusfor theaverage listening level(music power) apower
dissipation of 2.0 W can be used for the thermal PCB
calculation; see Section “Thermal behaviour (PCB design
considerations)”.

Mode pin

For the 3 functional modes: standby, mute and operate,
the MODE pin can be driven by a 3-state logic output
stage, e.g. a microcontroller with some extra components
for DC-level shifting; see Fig.10 for the respective
DC levels.

• Standby mode is activated by a low DC level between
0 and 2 V. The power consumption of the IC will be
reduced to <0.12 mW.

• Mute mode is activated by a DC level between

3.3 and 6.4 V. The outputs of theamplifier willbe muted
(no audio output); however the amplifier is DC biased
and the DC level of the output pins stays at half the
supply voltage. The input coupling capacitors are
charged when in mute mode to avoid pop-noise.

• The IC will be in the operating condition when the
voltage at pin MODE is between 8.5 V and V

CC

.

Switch-on/switch-off

To avoid audible plops during switch-on and switch-off of
the supply voltage, the MODE pin has to be set in standby
condition (VCClevel) before the voltage is applied
(switch-on) or removed (switch-off). The input and SVRR
capacitors are smoothly charged during mute mode.

The turn-on and turn-off time can be influenced by an
RC-circuit connected to the MODE pin. Switching the
deviceor the MODEpin rapidly onand off maycause‘click
and pop’ noise. This can be prevented by proper timing on
theMODEpin. Further improvementintheBTL application
can be obtained by connecting an electrolytic capacitor
(e.g. 100 µF) between the SVRR pin and signal ground.

2001 Apr 17 9

Philips Semiconductors Product specification

8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW

Thermal behaviour (PCB design considerations)

The typical thermal resistance [R

] of the IC in the

th(j-a)

HTSSOP20 package is 37 K/W if the IC is soldered on a
printed-circuit board with double sided 35 µm copper with
a minimum area of approximately 30 cm2. The actual
usable thermal resistance depends strongly on the
mounting method of the device on the printed-circuit
board, the solderingmethod and the area andthickness of
the copper on the printed-circuit board.

The bottom ‘heat-spreader’ of the IC has to be soldered
efficiently on the ‘thermal land’ of the copper area of the
printed-circuit board using the re-flow solder technique.

A number of thermal vias in the ‘thermal land’ provide a
thermal path to the opposite copper site of the
printed-circuit board. The size of the surface layersshould
be as large as needed to dissipate the heat.

handbook, full pagewidth

60

K/W

50

The thermal vias (0.3 mm ∅) in the ‘thermal land’ should
not use web construction techniques, because those will
have high thermal resistance; continuous connection
completely around the via-hole is recommended.

For a maximum ambient temperature of 60 °C the
following calculation can be made: for the application at
VP= 12 V and RL=8Ω the (ALL-) music power
dissipation approximately 2.0 W;
T

j(max)=Tamb

+P×R

=60°C + 2.0 × 37 = 134 °C.

th(j-a)

Note: the above calculation holds for application at
‘average listening level’ music output signals. Applying (or
testing) withsine wave signalswill produce approximately
twice the music power dissipation; at worst case condition
this can activate the maximum temperature protection.

ON-BOARD-COOLING

COPPER DESIGN

40

30

20

10

0

R

curve is given for practical calculation purpose.

th(j-p)

L = 30 mm plus vias

Fig.5 Thermal resistance of the HTSSOP20 mounted on printed-circuit board.

R

th(j-a)

R

th(j-p)

10

234

number of 35 µm copper layers

CU-LAYER 1

L

L

CU-LAYER 2-4

MGU306

2001 Apr 17 10

Philips Semiconductors Product specification

8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW

handbook, full pagewidth

top view

bottom copper layout

IN2

Std By

On

220 nF

−

OUT2

+

V

P

1000 µF

25 V

1000 µF

top view

component layout

100 nF

16 V

TDA

1517ATW

100 µF/16 V

sept −2000

+

OUT1

top copper layout

IN1

MGU312

top view

For BTL applications the two 1000 µF/16 V capacitors must be replaced by 0 Ω jumpers.

Fig.6 Printed-circuit board layout for BTL and SE application.

2001 Apr 17 11

Philips Semiconductors Product specification

8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW

Typical performance characteristics for BTL
application at VP= 12 V and RL=8Ω

10

handbook, halfpage

THD

(%)

1

−1

10

−2

10

−2

10

−1

10

1

Po (W)

Fig.7 THD as a function of Po.

MGU307

10

handbook, halfpage

THD

(%)

MGU308

1

−1

10

−2

10

−2

10

10

−1

10

1

Po = 1 W

10

f (kHz)

2

10

Fig.8 THD as a function of frequency.

MGU309

SVRR

(dB)

0

handbook, halfpage

−20

−40

−60

mute

−80

−2

10

−1

10

110

f (kHz)

2

10

Fig.9 SVRR as a function of frequency.

2001 Apr 17 12

10

handbook, halfpage

V

o

(V)

1

−1

10

−2

10

−3

10

−4

10

26

Fig.10 Vo as a function of V

V

MODE

MODE

MGU310

1240810

(V)

.

Philips Semiconductors Product specification

8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW

handbook, halfpage

6

P

(W)

5

4

3

2

1

0

010

2

VP = 12 V

RL = 8 Ω

VP = 15 V
RL = 16 Ω

468

Fig.11 Power dissipation as a function of Po.

MGU311

P

(W)

o

12

handbook, halfpage

P

o

(W)

10

8

6

4

2

0

68

RL = 4 Ω 8 Ω 16 Ω

10 12 18

14 16

Fig.12 Po as a function of VP.

MGU323

VP (V)

2001 Apr 17 13

Philips Semiconductors Product specification

8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW

PACKAGE OUTLINE

HTSSOP20: plastic, heatsink thin shrink small outline package; 20 leads; body width 4.4 mm

SOT527-1

D

c

y

Z

20

heathsink side

pin 1 index

D

h

11

A

E

h

2

A

1

110

w M

b

e

p

E

H

E

detail X

A

X

v M

A

(A )

3

A

θ

L

p

L

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

mm

OUTLINE

VERSION

SOT527-1

A

max.

1.10

0.15

0.05

p

0.95

0.80

IEC JEDEC EIAJ

0.25

0.30

0.19

UNIT A1A2A3b

Notes

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.

(1)

cD

0.20

6.6

0.09

6.4

REFERENCES

D

4.3

4.1

(2)

E

h

4.5

4.3

2001 Apr 17 14

eLL

E

3.1

2.9

h

0.65

H

6.6

6.2

E

p

0.75

0.50

EUROPEAN

PROJECTION

(1)

Z

ywv θ

0.13 0.10.21.0

0.5

0.2

ISSUE DATE

99-11-12
00-07-12

o

8

o

0

Philips Semiconductors Product specification

8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW

SOLDERING
Introduction to soldering surface mount packages

Thistext gives averybriefinsight to acomplextechnology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface

mount IC packages. Wave soldering can still be used for
certainsurface mount ICs, butitis not suitable forfinepitch
SMDs. In these situations reflow soldering is
recommended.

Reflow soldering

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
tothe printed-circuit boardby screen printing,stencillingor
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.

Wave soldering

Conventional single wave soldering is not recommended
forsurface mount devices (SMDs)orprinted-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• Forpackages with leads onfoursides, the footprint must
be placedat a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering,the packagemust
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

If wave soldering is used the following conditions must be
observed for optimal results:

2001 Apr 17 15

Philips Semiconductors Product specification

8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW

Suitability of surface mount IC packages for wave and reflow soldering methods

PACKAGE

WAVE REFLOW

(1)

BGA, HBGA, LFBGA, SQFP, TFBGA not suitable suitable

SOLDERING METHOD

HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, SMS not suitable

(3)

PLCC

, SO, SOJ suitable suitable
LQFP, QFP, TQFP not recommended
SSOP, TSSOP, VSO not recommended

(2)

(3)(4)
(5)

suitable

suitable
suitable

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

.

2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

5. Wave soldering is onlysuitable forSSOP and TSSOP packages with a pitch(e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

2001 Apr 17 16

Philips Semiconductors Product specification

8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW

DATA SHEET STATUS

PRODUCT

DATA SHEET STATUS

Objective data Development This data sheet contains data from the objective specification for product

Preliminary data Qualification This data sheet contains data from the preliminary specification.

Product data Production This data sheet contains data from the product specification. Philips

(1)

STATUS

(2)

DEFINITIONS

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given arein
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or atanyother conditions abovethosegiven in the
Characteristics sections of the specificationis not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warranty thatsuchapplicationswill be
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expectedto result in personal injury.Philips
Semiconductorscustomersusing or selling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse of any oftheseproducts, conveys no licenceortitle
under any patent, copyright, or mask work right to these
products,and makes norepresentationsor warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

2001 Apr 17 17

Philips Semiconductors Product specification

8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW

NOTES

2001 Apr 17 18

Philips Semiconductors Product specification

8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW

NOTES

2001 Apr 17 19

Philips Semiconductors – a w orldwide compan y

Argentina: see South America
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Tel. [phone], Fax. [phone]
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Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

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Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
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Portugal: see Spain
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Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

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Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
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Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
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Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

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60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260,
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Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. [phone]

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

2001

Internet: http://www.semiconductors.philips.com

72

Printed in The Netherlands 753503/02/pp20 Date of release: 2001 Apr 17 Document order number: 9397 750 08264