Page 1
INTEGRATED CIRCUITS
DATA SH EET
TDA1300T; TDA1300TT
Photodetector amplifiers and laser
supplies
Preliminary specification
Supersedes data of 1995 Nov 16
File under Integrated Circuits, IC01
1997 Jul 15
Page 2
Philips Semiconductors Preliminary specification
Photodetector amplifiers and laser
supplies
FEATURES
• Six input buffer amplifiers with low-pass filtering with
virtually no offset
• HF data amplifier with a high or low gain mode
• Two built-in equalizers for single or double speed mode
ensuring high playability in both modes
• Full automatic laser control including stabilization and
an on/off switch and containing a separate supply V
for power reduction
• Applicable with N-sub laser with N-sub or P-sub monitor
diode
• Adjustable laser bandwidth and laser switch-on current
slope
• Protection circuit preventing laser damage due to supply
voltage dip
• Optimized interconnect between pick-up detector and
TDA1301
• Wide supply voltage range
• Wide temperature range
• Low power consumption.
DDL
TDA1300T; TDA1300TT
GENERAL DESCRIPTION
The TDA1300 is an integrated data amplifier and laser
supply for three beam pick-up detectors applied in a wide
range of mechanisms for Compact Disc (CD) and read
only optical systems. It offers 6 amplifiers which amplify
and filter the focus and radial diode signals adequately and
provides an equalized RF signal for single or double speed
mode which can be switched by means of the speed
control pin.
The device can handle astigmatic, single Foucault and
double Foucault detectors and is applicable with all N-sub
lasers and N-sub or P-sub monitor diode units.
After a single initial adjustment the circuit keeps control
over the laser diode current resulting in a constant light
output power independent of ageing. The chip is mounted
in a small SO24 or TSSOP24 package enabling mounting
close to the laser pick-up unit on the sledge.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
DD
supply voltage 3 − 5.5 V
Diode current amplifiers (n = 1 to 6)
G
d(n)
I
O(d)
B 3 dB bandwidth I
diode current gain 1.43 1.55 1.67
diode offset current −−100 nA
= 1.67 µA50−−kHz
i(d)
RFE amplifier (built-in equalizer)
t
d(eq)
t
d(f)
equalization delay fi= 0.3 MHz − 320 − ns
flatness delay double speed − 5 − ns
Laser supply
I
o(L)
output current V
=3V −−−100 mA
DDL
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
TDA1300T SO24 plastic small outline package; 24 leads; body width 7.5 mm SOT137-1
TDA1300TT TSSOP24 plastic thin shrink small outline package; 24 leads; body width 4.4 mm SOT355-1
1997 Jul 15 2
Page 3
Philips Semiconductors Preliminary specification
Photodetector amplifiers and laser
supplies
BLOCK DIAGRAM
handbook, full pagewidth
I6
23 2
in
I6
20
I5
24
I4
22
I3
19
I2
6
I5
in
5
I4
in
4
I3
in
3
I2
in
2
1.5x
1.5x
1.5x
1.5x
1.5x
TDA1300T; TDA1300TT
Id6
Id5
Id4
Id3
Id2
out
out
out
out
out
O6
5
O5
1
O4
3
O3
6
O2
HG
LS
ADJ
V
DD
GND
I1
in
21
I1
11
12
14
17
MI
18
15
V
I
ADJ
V
I
mon
DD
mon
1
I
i(central)
(N-sub) or
(P-sub)
(N-sub) or
(P-sub)
SUPPLY
1.5x
95, 120, 134 or
240 kΩ
I/V
V
gap
OTA
−4
13
CL
Id1
TDA1300T
ILO
ON/OFF
out
10
16
MBG474
4
O1
9
RFE
RF
8
V
DDL
LO
7
LDON
Fig.1 Block diagram.
1997 Jul 15 3
Page 4
Philips Semiconductors Preliminary specification
Photodetector amplifiers and laser
supplies
PINNING
SYMBOL PIN DESCRIPTION
O4 1 current amplifier 4 output
O6 2 current amplifier 6 output
O3 3 current amplifier 3 output
O1 4 current amplifier 1 output
O5 5 current amplifier 5 output
O2 6 current amplifier 2 output
LDON 7 control pin for switching the laser on
and off
V
DDL
RFE 9 equalized output voltage of sum signal
RF 10 unequalized output
HG 11 control pin for gain switch
LS 12 control pin for speed switch
CL 13 external capacitor
ADJ 14 P-sub monitor (if connected via
GND 15 ground (substrate connection)
LO 16 laser output; current output
MI 17 monitor diode input (laser)
V
DD
I2 19 photo detector input 2 (central)
I5 20 photo detector input 5 (satellite)
I1 21 photo detector input 1 (central)
I3 22 photo detector input 3 (central)
I6 23 photo detector input 6 (satellite)
I4 24 photo detector input 4 (central)
8 laser supply voltage
of amplifiers 1 to 4
resistor to GND);
N-sub monitor (if connected to V
18 supply
DD
TDA1300T; TDA1300TT
andbook, halfpage
)
1
O4
2
O6
3
O3
4
O1
5
O5
6
O2
TDA1300T
7
LDON
8
V
DDL
9
RFE
10
RF
11
HG
12
LS
MBG472
Fig.2 Pin configuration.
24
I4
23
I6
22
I3
21
I1
20
I5
19
I2
18
V
DD
17
MI
16
LO
15
GND
14
ADJ
13
CL
1997 Jul 15 4
Page 5
Philips Semiconductors Preliminary specification
Photodetector amplifiers and laser
supplies
FUNCTIONAL DESCRIPTION
The TDA1300T; TDA1300TT can be divided into two main
sections:
• Laser control circuit section
• Photo diode signal filter and amplification section.
Laser control circuit section
The main function of the laser control circuit is to control
the laser diode current in order to achieve a constant light
output power. This is done by monitoring the monitor
diode. There is a fixed relation between light output power
of the laser and the current of the monitor diode. The circuit
can handle P-sub or N-sub monitor diodes.
N-sub
MONITOR
In this event pin 14 (ADJ) must be connected to the
positive supply voltage VDD to select the N-sub mode. With
an adjustable resistor (R
current can be adjusted (and so the laser light output
power) if one knows that the control circuit keeps the
monitor voltage V
at a constant level of
mon
approximately 150 mV.
) across the diode the monitor
ADJn
TDA1300T; TDA1300TT
R
ADJn
KG
B
----------------
N
× 8709–×10×≅
C
L
ext
in case of N-sub monitor, where
G
represents the AC gain of an extra loop amplifier,
ext
if applied, and K = ∆I
the laser/monitor unit. I
/∆IL which is determined by
mon
mon
(pin 17) at typical light emission power of the laser
diode.
• The third part is the power output stage, its input being
the integrator output signal. This stage has a separate
supply voltage (V
), thereby offering the possibility of
DDL
reduced power consumption by supplying this pin with
the minimum voltage necessary.
It also has a laser diode protection circuit which comes into
action just before the driving output transistor will get
saturated due to a large voltage dip on V
will result in a lower current of the laser diode, which
normally is followed immediately by an increment of the
voltage of the external capacitor CL. This could cause
damage to the laser diode at the end of the dip.
The protection circuit prevents an increment of the
capacitor voltage and thus offers full protection to the laser
diode under these circumstances.
(Hz)
is the average current
. Saturation
DDL
P-sub
MONITOR
In this event pin 14 (ADJ) is connected via resistor R
ADJp
to ground. The P-sub mode is selected and pin 14 (ADJ)
acts as reference band gap voltage, providing together
with R
circuit keeps the monitor current at a level which is 10l
an adjustable current l
ADJp
. Now the control
ADJ
ADJ
The circuit is built up in three parts:
• The first part is the input stage which is able to switch
between both modes (N-sub or P-sub).
• The second part is the integrator part which makes use
of an external capacitor CL. This capacitor has two
different functions:
– During switch-on of the laser current, it provides a
current slope of typically:
≅
10
----------C
6–
(A/s)
L
∆I
o(L)
------------- t∆
– After switch-on it ensures that the bandwidth equals
KG
× 909–×10×
≅
B
P
ext
------------------------------------------------- -
×
C
LImon
(Hz)
in case of P-sub monitor or
Photo diode signal filter and amplification section
This section has 6 identical current amplifiers.
Amplifiers 1 to 4 are designed to amplify the focus photo
diode signals. Each amplifier has two outputs: an
LF output and an internal RF output. Amplifiers 5 and 6
.
are used for the radial photo diode currents and only have
an LF output. All 6 output signals are low-pass filtered with
a corner frequency at 69 kHz. The internal RF output
signals are summed together and converted to a voltage
afterwards by means of a selectable transresistance.
This transresistance R
can be changed between 140 kΩ
RF
(3.3 V application) or 240 kΩ (5 V application) in
combination with the P-sub monitor. In the event of the
N-sub monitor selection, RRF can be changed between
70 kΩ (3.3 V application) and 120 kΩ (5 V application).
The RF signal is available directly at pin 10 but there is
also an unfiltered signal available at pin 9.
The used equalization filter has 2 different filter curves:
• One for single-speed mode
• One for double-speed mode.
1997 Jul 15 5
Page 6
Philips Semiconductors Preliminary specification
Photodetector amplifiers and laser
supplies
Table 1 Gain and monitor modes
PIN
HG ADJ
0R
connected
ADJp
to ground
0 1 N-sub 70
(1)
1
R
ADJp
connected
to ground
(1)
1
1 N-sub 120
Note
1. Logic 1 or not connected.
Table 2 Speed and laser modes; note 1
PIN
DEFAULT
VALUE
(2)
LS 1 1 0 X
LDON 1 X
MONITOR MODE R
P-sub 140
P-sub 240
SINGLE DOUBLE on off
(3)
TDA1300T; TDA1300TT
(kΩ) INTENDED APPLICATION AREA
RF
3.3 V
5V
MODE
SPEED LASER
(3)
(3)
X
10
(3)
X
Notes
1. 1 = HIGH voltage (V
); 0 = LOW voltage (GND); X = don’t care.
DD
2. If not connected.
3. X = don’t care.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DD
P
max
T
stg
T
amb
supply voltage − 8V
maximum power dissipation − 300 mW
storage temperature −65 +150 °C
operating ambient temperature
TDA1300T −40 +85 °C
TDA1300TT −40 +70 °C
(1)
V
es
electrostatic handling pin 16 note 2 −2+2kV
electrostatic handling (all other pins) −3+3kV
Notes
1. Classification A: human body model; C = 100 pF; R = 1500 Ω; V
= ±2000 V.
es
Charge device model: C = 200 pF; L = 2.5 µH; R = 0 Ω; Ves= 250 V.
2. Equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor.
1997 Jul 15 6
Page 7
Philips Semiconductors Preliminary specification
Photodetector amplifiers and laser
TDA1300T; TDA1300TT
supplies
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
QUALITY SPECIFICATION
In accordance with
Reference Handbook”
CHARACTERISTICS
= 3.3 V; V
V
DD
(R
= 750 Ω; C
ext
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply
I
DD
V
DD
V
DDL
P power dissipation laser off; V
Diode current amplifiers (n = 1 to 6; m = 1 to 6)
I
i(d)
I
n(i)(eq)
V
i(d)
V
o(d)
G
d(n)
I
O(d)
Z
o(d)
B 3 dB bandwidth I
G
mm
thermal resistance from junction to ambient in free air
TDA1300T 60 K/W
TDA1300TT 128 K/W
“SNW-FQ-611 part E”
. The numbers of the quality specification can be found in the
“Quality
. The handbook can be ordered using the code 9397 750 00192.
= 2.5 V; T
DDL
= 47 pF) connected at the RFE output pin.
ext
=25°C; R
amb
=48kΩ; HG = logic 1; LS = logic 1; with an external low-pass filter
ADJ
supply current laser off − 7 − mA
amplifier supply voltage 3 − 5.5 V
laser control supply voltage 2.5 − 5.5 V
=3V − 20 − mW
DD
diode input current note 1 −− 10 µA
equivalent noise input current − 1 − pA/√Hz
diode input voltage I
= 1.67 µA − 0.9 − V
i(d)
diode output voltage −0.2 − VDD− 1V
diode current gain I
diode offset current I
= 1.67 µA;
i(d)
V
= 0 V; note 2
o(d(n))
i(central)=Ii(satellite)
=0;
1.43 1.55 1.67
−− 100 nA
note 3
output impedance I
mismatch in gain between
amplifiers
= 1.67 µA;
i(d)
V
I
V
=0V
o(d(n))
= 1.67 µA5068−kHz
i(d)
= 1.67 µA;
i(d)
o(d(n))=Vo(d(m))
500 −− kΩ
−− 3%
1997 Jul 15 7
Page 8
Philips Semiconductors Preliminary specification
Photodetector amplifiers and laser
TDA1300T; TDA1300TT
supplies
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Data amplifier; equalized single and double speed
V
R
O(RF)
RF
DC output voltage I
i(central)
transresistance N-sub monitor mode
(low gain); note 3
N-sub monitor mode
(high gain); note 3
P-sub monitor mode
(low gain); note 4
P-sub monitor mode
(high gain); note 4
V
O(RF)(max)
SR
RF
Z
o(RF)
t
d(eq)
t
d(f)
maximum output voltage note 5 −− V
RF slew rate VSR= 1 V (peak-to-peak) − 6 − V/µs
RF output impedance fi= 1 MHz − 100 −Ω
equalization delay − 320 − ns
flatness delay (Φ/ω) LS = 1; note 6 − 10 − ns
LS = 0; note 6 − 5 − ns
G/G data amplifier gain ratio note 6 4.5 6 − dB
B
RF
unequalized output bandwidth I
i(d)
Control pins LDON, LS and HG (with 47 kΩ internal pull-up resistor)
V
IL
V
IH
I
IL
LOW level input voltage −0.2 − +0.5 V
HIGH level input voltage VDD− 1 − VDD+ 0.2 V
LOW level input current −− 100 µA
Laser output
V
I
∆I
o(L)
o(L)
o(L)
/∆t
output voltage I
o(L)
output current −− −100 mA
slew rate output current C
Monitor diode input
V
ref
I
L
V
i(mon)
I
i(mon)
virtual reference voltage N-sub monitor mode 130 150 170 mV
leakage current N-sub monitor mode − 1 − nA
monitor input voltage P-sub monitor mode − VDD− 0.7 − V
monitor input current P-sub monitor mode −− 2mA
∆T reference temperature drift N-sub monitor mode − 40 − ppm
RS
ref
reference supply rejection N-sub monitor mode −− 1%
=0 − 0.3 − V
56 70 84 kΩ
96 120 144 kΩ
112 140 168 kΩ
200 240 285 kΩ
− 1.2 V
DD
= 1.67 µA35−MHz
= 100 mA −0.2 − V
= 1 nF (see Fig.8) − 3.4 − mA/µs
L
DDL
− 0.7 V
1997 Jul 15 8
Page 9
Philips Semiconductors Preliminary specification
Photodetector amplifiers and laser
TDA1300T; TDA1300TT
supplies
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Reference source V
V
ref
reference voltage R
∆T reference temperature drift − 40 − ppm
RS
ref
I
ADJ
Z
i
reference supply rejection −− 1%
adjustment current R
input impedance R
M multiplying factor (I
Notes to the characteristics
1. The maximum input current is defined as the current in which the gain G
supply voltage to VDD= 5 V increases the maximum input current (see also Figs 4 and 5).
2. The gain increases if a larger supply voltage is used (see Fig.6).
3. Transresistance of 70 kΩ and 120 kΩ (typical) is only available in N-sub monitor mode (see Table 1).
4. Transresistance of 140 kΩ and 240 kΩ (typical) is only available in P-sub monitor mode (see Table 1).
5. Output voltage swing will be: V
6. For single speed the data amplifier gain ratio is defined as gain difference between 1 MHz and 100 kHz, while the
flatness delay is defined up to 1 MHz (see Fig.7). For double speed the data amplifier gain ratio is defined as gain
difference between 2 MHz and 200 kHz, while the flatness delay is defined up to 2 MHz.
and laser adjustment current I
ADJ
ADJ
ADJ
ADJ
mon/IADJ
) − 10 −−
O(RF)(swing)=VO(RF)(max)
ADJ
=48kΩ 1.15 1.24 1.31 mV
= 5.6 kΩ−−200 µA
= 4.8 kΩ−1−kΩ
reaches its minimum. Increasing the
d(n)
− V
O(RF)(p-p)
.
1997 Jul 15 9
Page 10
Philips Semiconductors Preliminary specification
Photodetector amplifiers and laser
TDA1300T; TDA1300TT
supplies
Transfer functions; see Fig.6
The equalized amplifier including C
output only and ‘RF’ refers to equalized and not equalized outputs.
F
OR SINGLE SPEED (SP = LOGIC 1)
V
RFE
------------------I
i(central)
F
OR DOUBLE SPEED (SP = LOGIC 0)
V
RFE
------------------I
i(central)
The denominator forms the denominator of a Bessel low-pass filter.
Symbols used in equations (1) and (2) are explained in Table 3.
Table 3 Transresistance
SYMBOL DESCRIPTION TYP. UNIT
k internally defined 4
ω
os/ω1
Q internally defined 0.691
ω
=2×ω
od
R
RF
R
ext
C
ext
os
and R
ext
R
------------------------------------------------------------------------
RF
11Q⁄ sω
R
RF
has the following transfer functions, where ‘RFE’ refers to equalized
ext
1ks
–
1ks
------------------------------------------------------------------------11Q⁄ sω
internally defined 1.094
internally defined 17.6 × 10
see Chapter “Characteristics” −
external resistor 750 Ω
external capacitor 47 pF
2
2
ω
⁄
os
⁄ s2ω
–
⁄+×+
os
2
2
ω
⁄
⁄ s2ω
od
2
os
os
2
⁄+×+
1
-----------------------
⁄+
1sω
od
1
××=
----------------------------------------- 1sR
×××=
----------------------------------------- 1sR
1
×+
extCext
1
×+
extCext
−6
(1)
(2)
rad/s
1997 Jul 15 10
Page 11
Philips Semiconductors Preliminary specification
Photodetector amplifiers and laser
supplies
handbook, full pagewidth
24
I
i(max)
(µA)
20
16
12
8
3 3.5 4 4.5 5
TDA1300T; TDA1300TT
MBG471
VDD (V)
5.5
↑ =test limit.
40
handbook, full pagewidth
I
o
(µA)
30
20
10
0
010 30
Fig.3 Maximum input current as a function of VDD.
(1)
(2)
(3)
20
Ii (µA)
MBG469
40
→ =test limit. (1) G
(2) VDD= 5.5V.
(3) VDD= 3.4V.
d(n)
= 1.43.
Fig.4 Output current as a function of input current.
1997 Jul 15 11
Page 12
Philips Semiconductors Preliminary specification
Photodetector amplifiers and laser
supplies
1.75
handbook, full pagewidth
Io/I
i
(mA)
1.65
1.55
1.45
1.35
3 3.5 4 4.5 5
TDA1300T; TDA1300TT
MBG470
VDD (V)
5.5
↓ = test limit.
9.0
handbook, full pagewidth
gain
(dB)
7.0
5.0
3.0
1.0
−1.0
10
Fig.5 Gain as a function of VDD.
(1)
(1)
2
10
MBG468
450
t
d
(ns)
400
350
(2)
(2)
3
10
f (kHz)
300
250
200
4
10
(1) Single speed.
(2) Double speed.
Fig.6 Transfer of equalizer.
1997 Jul 15 12
Page 13
Philips Semiconductors Preliminary specification
Photodetector amplifiers and laser
supplies
INTERNAL PIN CONFIGURATION
book, full pagewidth
V
DD
47 kΩ
GND
V
DD
I1
I2
I3
I4
I5
I6
LDON
HG
LS
O1
O2
O3
O4
O5
O6
TDA1300T; TDA1300TT
V
DD
V
DD
CL
RF
RFE
V
V
DD
DD
V
from
LDON
circuitry
DD
V
V
DDL
ADJ
LO
DD
Fig.7 Equivalent internal pin diagrams.
1997 Jul 15 13
MBG475
P-sub mode
MI
N-sub mode
MI
V
DD
V
DD
Page 14
Philips Semiconductors Preliminary specification
Photodetector amplifiers and laser
supplies
APPLICATION INFORMATION
to
motor
spindle
left
right
clk
(SAA7345)
DECODER
PLL
AMP
POWER
SUBCODE
DECODER
MOTOR
CONTROL
KEYBORD
DISPLAY
PROCESSOR
DISPLAY
clk
TDA1300T; TDA1300TT
end_stop_switch
MBG473
DDD
V
DDA
V
RF/
NRST
DDD
V
DDA
V
DD
V
RFE
HG LS
OTD
CLO
D1
O1
I1
XTLI
D2
O2
DIODE
I2
XTLO
DIGITAL SERVO IC
D3
D4
O3
O4
AND
LASER
AMPLIFIER
I3
I4
XTLR
R1
O5
SUPPLY
I5
TS1
TDA1301
R2
O6
TDA1300
I6
focus
actuator
radial
actuator
sledge
SICL
SIDA
LDON
LDON
LO
ADJ GND
CL
DDL
V
SILD
L
C
1 nF
SSD
RA FO SL V
SSK
V
DD
V
RF/
2.5 to 5 V
V
DD
RFE
HG LS
O1
I1
O2
DIODE
I2
O3
AMPLIFIER
I3
(TDA7072/7073)
POWER AMPLIFIER
O4
O5
O6
AND
LASER
SUPPLY
TDA1300
I4
I5
I6
MI
LDON
LO
ADJ GND
CL
DDL
V
L
C
1 nF
ADJp
R
2.5 to 5 V
handbook, full pagewidth
Fig.8 Application diagram for CD player.
TS2
RL
RH
V
V
MI
ADJn
R
photo-
diodes
configuration
N-sub monitor
mon
la
P-sub monitor
1997 Jul 15 14
photo-
diodes
configuration
mon
la
Page 15
Philips Semiconductors Preliminary specification
Photodetector amplifiers and laser
supplies
PACKAGE OUTLINES
SO24: plastic small outline package; 24 leads; body width 7.5 mm
D
c
y
Z
24
13
TDA1300T; TDA1300TT
SOT137-1
E
H
E
A
X
v M
A
pin 1 index
1
e
0 5 10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
mm
A
max.
2.65
0.10
A1A
0.30
0.10
0.012
0.004
2
2.45
2.25
0.096
0.089
A
0.25
0.01
b
3
p
0.49
0.32
0.36
0.23
0.019
0.013
0.014
0.009
UNIT
inches
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
(1)E(1) (1)
cD
15.6
15.2
0.61
0.60
12
w M
b
p
scale
eHELLpQ
7.6
1.27
7.4
0.30
0.050
0.29
10.65
10.00
0.419
0.394
A
1.4
0.055
Q
2
A
1
detail X
1.1
1.1
0.4
0.043
0.016
1.0
0.043
0.039
0.25
0.01
L
p
L
(A )
0.25 0.1
0.01
A
3
θ
ywv θ
Z
0.9
0.4
0.035
0.004
0.016
o
8
o
0
OUTLINE
VERSION
SOT137-1
IEC JEDEC EIAJ
075E05 MS-013AD
REFERENCES
1997 Jul 15 15
EUROPEAN
PROJECTION
ISSUE DATE
95-01-24
97-05-22
Page 16
Philips Semiconductors Preliminary specification
Photodetector amplifiers and laser
TDA1300T; TDA1300TT
supplies
TSSOP24: plastic thin shrink small outline package; 24 leads; body width 4.4 mm
24
D
c
y
Z
13
E
H
E
SOT355-1
A
X
v M
A
pin 1 index
112
w M
b
e
DIMENSIONS (mm are the original dimensions)
UNIT A
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.
A
max.
mm
1.10
OUTLINE
VERSION
SOT355-1 MO-153AD
0.15
0.05
A2A
1
0.95
0.80
IEC JEDEC EIAJ
0.25
b
3
p
0.30
0.19
p
0 2.5 5 mm
scale
(1)E(2) (1)
cD
0.2
7.9
0.1
7.7
REFERENCES
eHELLpQZywv θ
4.5
0.65
4.3
6.6
6.2
Q
A
2
A
1
L
detail X
0.4
0.75
0.3
0.50
EUROPEAN
PROJECTION
(A )
3
A
θ
L
p
0.13 0.10.21.0
0.5
0.2
ISSUE DATE
93-06-16
95-02-04
o
8
o
0
1997 Jul 15 16
Page 17
Philips Semiconductors Preliminary specification
Photodetector amplifiers and laser
supplies
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
“IC Package Databook”
Reflow soldering
Reflow soldering techniques are suitable for all SO and
TSSOP packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
SO
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
(order code 9398 652 90011).
TDA1300T; TDA1300TT
TSSOP
Wave soldering is not recommended for TSSOP
packages. This is because of the likelihood of solder
bridging due to closely-spaced leads and the possibility of
incomplete solder penetration in multi-lead devices.
If wave soldering cannot be avoided, the following
conditions must be observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
• The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate
solder thieves at the downstream end.
Even with these conditions, do not consider wave
soldering TSSOP packages with 48 leads or more, that
is TSSOP48 (SOT362-1) and TSSOP56 (SOT364-1).
M
ETHOD (SO AND TSSOP)
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
1997 Jul 15 17
Page 18
Philips Semiconductors Preliminary specification
Photodetector amplifiers and laser
TDA1300T; TDA1300TT
supplies
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jul 15 18
Page 19
Philips Semiconductors Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
NOTES
1997 Jul 15 19
Page 20
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1997 SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Internet: http://www.semiconductors.philips.com
Printed in The Netherlands 547027/50/03/pp20 Date of release: 1997 Jul 15 Document order number: 9397 750 01673
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