Page 1
STU10NB80
N - CHANNEL 800V - 0.65Ω - 10A - Max220
PowerMESH MOSFET
PRELIMINARY DATA
TYPE V
DSS
R
DS(on)
I
D
STU10NB80 800 V < 0.8 Ω 10 A
■
TYPICAL R
■
EXTREMELY HIGH dv/dt CAPABILITY
■
100% AVALANCHE TESTED
■
VERY LOW INTRINSIC CAPACITANCES
■
GATE CHARGE MINIMIZED
DS(on)
= 0.65
Ω
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
per area, exceptional avalanche
DS(on)
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■
SWITCH MODE POWER SUPP LIES (SMPS)
■
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTI BLE
POWER SUPPLIES AND MOTOR DRIVE
■
HIGH CURRENT, HIGH SPEED SWITCH ING
3
2
1
Max220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt (
T
(•) Pulse width limited by safe operating area (1) ISD
April 1999
Drain-source Voltage (VGS = 0) 800 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 30 V
GS
I
Drain Current (continuous) at Tc = 25 oC10A
D
I
Drain Current (continuous) at Tc = 100 oC 6.3 A
D
800 V
(•) Drain Current (pulsed) 40 A
Total Dissipation at Tc = 25 oC 160 W
tot
Derating Factor 1.28 W/
) Peak Diode Recovery voltage slope 4 V/ns
1
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
≤10 Α, ≤
200 A/µs, VDD ≤ V
(BR)DSS
, Tj ≤ T
JMAX
o
C
o
C
o
C
1/5
Page 2
STU10NB80
THERMAL DATA
R
thj-case
Rthj-am b
R
thc-sink
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERIST ICS
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive 10 A
0.78
62.5
0.5
300
o
C/W
oC/W
o
C/W
o
C
E
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
ELECTRICAL CHARACTERISTICS
= 50 V)
DD
= 25 oC unless otherwise specified)
(T
case
660 mJ
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
800 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 100 oC
DS
V
= ± 30 V
GS
1
50
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold
V
= VGS ID = 250 µA
DS
Voltage
Static Drain-source On
VGS = 10V ID = 5.5 A 0.65 0.8 Ω
Resistance
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
345V
10 A
µA
µA
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
C
iss
C
oss
C
rss
2/5
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 5.5 A 1.5 10 S
= 0 2900
GS
350
33
pF
pF
pF
Page 3
STU10NB80
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Time
t
Rise Time
r
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
V
= 400 V ID = 5 A
DD
= 4.7 Ω VGS = 10 V
R
G
VDD = 640 V I
= 4.7 Ω V
R
G
= 10 A V
D
GS =
10 V
GS
= 10 V
30
13
70
18
31
48 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Rise Time
Fall Time
f
Cross-over Time
c
V
= 640 V ID = 10 A
DD
= 4.7 Ω VGS = 10 V
R
G
26
23
37
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
10
40
I
SDM
I
SD
Source-drain Current
(•)
Source-drain Current
(pulsed)
V
(∗) Forward On Voltage ISD = 10 A VGS = 0 1.6 V
SD
t
Q
Reverse Recovery
rr
Time
Reverse Recovery
rr
I
= 10 A di/dt = 100 A/µs
SD
V
= 100 V Tj = 150 oC
DD
900
9
Charge
I
RRM
Reverse Recovery
20
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
3/5
Page 4
STU10NB80
Max220 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.3 4.6 0.169 0.181
A1 2.2 2.4 0.087 0.094
A2 2.9 3.1 0.114 0.122
b 0.7 0.93 0.027 0.036
b1 1.25 1.4 0.049 0.055
b2 1.2 1.38 0.047 0.054
c 0.45 0.6 0.18 0.023
D 15.9 16.3 0.626 0.641
D1 9 9.35 0.354 0.368
D2 0.8 1.2 0.031 0.047
D3 2.8 3.2 0.110 0.126
e 2.44 2.64 0.096 0.104
E 10.05 10.35 0.396 0.407
L 13.2 13.6 0.520 0.535
L1 3 3.4 0.118 0.133
mm inch
D3 D1
D2
C
A
E
A2
A1
D
b1
b2
L1
L
b
e
P011R
4/5
Page 5
STU10NB80
Information f urnished i s believed t o be accurate an d reliabl e. How ever, STMicroelect ronics assu mes no responsib ility fo r the consequen ces
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to chan ge w ithout notice. This publicatio n su persedes a nd r eplaces al l inf ormati on previ ously suppl ied. STMicroelect ron ics produ cts
are not auth ori zed f or use as critical component s in life support devices or systems without express written ap proval o f STM icroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronics – Printe d in Italy – All Rights Reserved
STMicroele ct ronics GROUP OF COMPA NIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kin gdom - U.S.A.
http://www.st.com
.
5/5
Loading...