Datasheet STTA9012TV2, STTA9012TV1 Datasheet (SGS Thomson Microelectronics)



STTA9012TV1/2

TURBOSWITCH

TM

ULTRA-FASTHIGH VOLTAGE DIODE

MAINPRODUCTCHARACTERISTICS

I

F(AV)

V

RRM

t

(typ) 65ns

rr

(max) 1.85V

V

F

2 x 45A

1200V

FEATURESAND BENEFITS

ULTRA-FAST,SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN

BOTH THE DIODE AND THE COMPANION
TRANSISTOR.

HIGH FREQUENCY AND/OR HIGH PULSED
CURRENTOPERATION.

HIGHREVERSEVOLTAGECAPABILITY.
LOW INDUCTANCEPACKAGE< 5 nH.
INSULATEDPACKAGE:

Electricalinsulation : 2500V

RMS

Capacitance: <45pF.

K2 A2

K1 A1

STTA9012TV1

ISOTOP

A2

K2K1A1

STTA9012TV2

TM

DESCRIPTION

TURBOSWITCH 1200V drastically cuts losses in
allhighvoltageoperationswhich requireextremely
fast,soft andnoise-freepower diodes.Due to their
optimizedswitchingperformancesthey also highly
decrease power losses in any associated

They are particularly suitable in motor control
circuitries, or in the primaryof SMPS as snubber,
clampingor demagnetizingdiodes. They are also
suitable for secondary of SMPS as high voltage

rectifierdiodes.
switching IGBT or MOSFET in all ”freewheel
mode”operations.

ABSOLUTE RATINGS (limiting values,per diode)

Symbol Parameter Value Unit

V

RRM

V

RSM

I

F(RMS)

I

FRM

I

FSM

T

stg

T

j

ISOTOPand TURBOSWITCH are trademarks of STMicroelectronics.

November1999 - Ed: 6B

Repetitivepeak reverse voltage 1200 V
Non repetitivepeakreverse voltage 1200 V
RMSforwardcurrent 150 A
Repetitivepeak forward current tp= 5 µs F = 5kHzsquare 700 A
Surgenon repetitiveforwardcurrent tp= 10ms sinusoidal 420 A
Storagetemperaturerange - 65 to+ 150 °C
Maximumoperatingjunction temperature 150 °C

1/8

STTA9012TV1/2

THERMAL ANDPOWER DATA (perdiode)

Symbol Parameter Testconditions Value Unit

R

th(j-c)

Junctionto casethermalresistance Perdiode 0.85 °C/W

Total 0.48
Coupling 0.1

P

1

Conductionpowerdissipation I

= 45Aδ=0.5

F(AV)

94 W

Tc=70°C

P

max

Totalpower dissipation

Tc=62°C 104 W

Pmax= P1 + P3 (P3 =10% P1)

STATICELECTRICALCHARACTERISTICS(per diode)

Symbol Parameter Test conditions Min Typ Max Unit

* Forwardvoltagedrop IF=45A Tj = 25°C

V

F

Tj = 125°C 1.3

I

** Reverseleakage current VR=0.8x

R

V

RRM

Vto Thresholdvoltage Ip< 3.I

Tj = 25°C
Tj = 125°C3

Tj = 125°C 1.57 V

AV

2.05

1.85
200

12

Rd Dynamicresistance 6 m

Test pulses : * tp = 380µs, δ <2%

** tp = 5ms ,

δ

<2%

To evaluatethe maximumconductionlossesuse the following equation:
P=V

toxIF(AV)

+rdxI

F2(RMS)

V

µA

mA

Ω

DYNAMICELECTRICALCHARACTERISTICS(perdiode)
TURN-OFF SWITCHING

Symbol Parameter Test conditions Min Typ Max Unit

t

rr

Reverserecovery
time

I

RM

Maximumreverse
recoverycurrent

S factor Softnessfactor Tj = 125°CV

Tj = 25°C
I

= 0.5A IR=1A Irr= 0.25A

F

=1A dIF/dt =-50A/µsVR=30V

I

F

65

115

Tj = 125°C VR= 600V IF=45A

/dt = -360A/µs

dI

F

/dt = -500A/µs50

dI

F

= 600V IF=45A

R

/dt = -500A/µs 1.2

dI

F

60

TURN-ON SWITCHING

Symbol Parameter Test conditions Min Typ Max Unit

t

fr

V

Fp

Forwardrecoverytime Tj = 25°C

I

=45A, dIF/dt =360 A/µs

F

measuredat 1.1× V

Peakforward voltage Tj= 25°C

=45A,dIF/dt = 360A/µs

I

F

=45A,dIF/dt = 500A/µs30

I

F

max

F

900

30

ns

A

-

ns

V

2/8

STTA9012TV1/2

Fig. 1: Conduction losses versus averagecurrent

(perdiode).

P1(W)

100

δ = 0.1

δ = 0.2

δ= 0.5

80

60

δ =1

40

T

20

=tp/T

0

IF(av) (A)

0 5 10 15 20 25 30 35 40 45 50

δ

tp

Fig. 3: Relative variation of thermal impedance
junctionto caseversuspulse duration (per diode).

Zth(j-c)/Rth(j-c)

1.0

0.8

0.6

δ = 0.5

0.4

δ = 0.2
δ = 0.1

0.2

Single pulse

0.0
1E-3 1E-2 1E-1 1E+0 5E+0

tp(s)

Fig. 2: Forward voltage drop versus forward

current(maximumvalues, perdiode).

IFM(A)

500

Tj=125°C

100

10

VFM(V)

1

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Fig.4: PeakreverserecoverycurrentversusdIF/dt
(90%confidence,per diode).

IRM(A)

80

VR=600V

70

Tj=125°C

60

IF=IF(av)

50
40
30
20
10

0

0 100 200 300 400 500

dIF/dt(A/µs)

IF=2*IF(av)

IF=0.5*IF(av)

Fig. 5: Reverse recoverytime versus dIF/dt (90%
confidence,perdiode).

trr(ns)

1000

VR=600V

800

600

IF=2*IF(av)

IF=IF(av)

400

200

dIF/dt(A/µs)

0

0 100 200 300 400 500

Tj=125°C

IF=0.5*IF(av)

Fig. 6: Softnessfactor(tb/ta) versusdIF/dt (typical
values).

S factor

1.60

1.40

1.20

1.00

0.80

0.60

IF<2*IF(av)
VR=600V

Tj=125°C

dIF/dt(A/µs)

0 100 200 300 400 500

3/8

STTA9012TV1/2

Fig. 7: Relative variation of dynamic parameters

versusjunctiontemperature(reference:Tj=125°C).

1.1

1.0

0.9

0.8

0.7

S factor

IRM

Tj(°C)

25 50 75 100 125

Fig. 9: Forward recovery time versus dIF/dt (90%
confidence,perdiode).

tfr(ns)

1000

900
800

VFR=1.1*VFmax.
IF=IF(av)

700
600
500
400
300
200
100

0 100 200 300 400 500

dIF/dt(A/µs)

Tj=125°C

Fig. 8: Transient peak forward voltage versus

/dt(90% confidence,per diode).

dI

F

VFP(V)

40

IF=IF(av)

35
30
25
20
15
10

5
0

0 100 200 300 400 500

dIF/dt(A/µs)

Tj=125°C

4/8

APPLICATIONDATA

The 1200V TURBOSWITCH series has been
designed to provide the lowest overall power
losses in all high frequencyor high pulsed current
operations. In such applications (Fig A to D),the
wayof calculatingthepowerlossesisgivenbelow:

TOTALLOSSES

due tothe diode

P = P1+ P2+ P3+ P4+ P5 Watts

STTA9012TV1/2

CONDUCTION

LOSSES

in thediode

Fig.A : ”FREEWHEEL”MODE.

SWITCHING

TRANSISTOR

V

R

t

REVERSE

LOSSES

in thediode

T

SWITCHING

LOSSES

in thediode

DIODE:

TURBOSWITCH

SWITCHING

LOSSES

in thetansistor

due to thediode

IL

F=1/T =t/T

LOAD

5/8

STTA9012TV1/2

Fig.B : SNUBBERDIODE. Fig. C : DEMAGNETIZINGDIODE.

PWM

t

T

F = 1/T = t/T

Fig.D : RECTIFIERDIODE.

STATIC& DYNAMICCHARACTERISTICS . POWERLOSSES .
Fig. E: STATICCHARACTERISTICS

Conductionlosses:

I

P1 = V

t0.IF(AV)+Rd.IF2(RMS)

I

F

6/8

Rd

V

R

V

tOVF

I

R

V

Reverse losses:

P2 = V

R.IR

.(1-δ)

APPLICATIONDATA (Cont’d)

Fig.F: TURN-OFFCHARACTERISTICS

STTA9012TV1/2

V

I

I

dI /dt

V

I

RM

I

V

trr = ta + tb

S = tb/ta

TRANSISTOR

F

DIODE

tbta

dI /dt

R

trr = ta + tb S = tb / ta

dIF/dt = VR/L

RECTIFIER

OPERATION

tbta

dI /dt

I

RM

R

IL

t

VR

V

Turn-onlosses:

(inthe transistor,due to the diode)

2

×

I

I

RM

RM

× ( 3 + 2 ×

6

xdI

I

×

× (S+2) ×

L

2

x

dI

F

F

⁄

dt

S)×F

⁄

dt

F

P5=

+

V

R

V

×

R

Turn-offlosses(in the diode):

2

×

I

×

xdI

⁄

F

S×F

dt

RM

6

t

P3=

V

R

Turn-offlosses:
(withnon negligibleserial inductance)

2

I

V

t

R

P3’=

×

R

RM

6

xdI

×

I

L

RM

S×F

×

⁄

dt

F

2

F

×

+

2

P3,P3’and P5aresuitableforpowerMOSFETand
IGBT

Fig. G: TURN-ONCHARACTERISTICS

I

F

I

dI /dt

F

0

V

F

V

Fp

1.1V

F

0t

tfr

Fmax

t

Turn-onlosses:

P4= 0.4 (V

V

F

FP-VF

).I

Fmax.tfr

.F

7/8

STTA9012TV1/2

PACKAGEMECHANICAL DATA

ISOTOP

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 11.80 12.20 0.465 0.480

A1 8.90 9.10 0.350 0.358

B 7.8 8.20 0.307 0.323
C 0.75 0.85 0.030 0.033

C2 1.95 2.05 0.077 0.081

D 37.80 38.20 1.488 1.504

D1 31.50 31.70 1.240 1.248

E 25.15 25.50 0.990 1.004
E1 23.85 24.15 0.939 0.951
E2 24.80 typ. 0.976typ.

G 14.90 15.10 0.587 0.594
G1 12.60 12.80 0.496 0.504
G2 3.50 4.30 0.138 0.169

F 4.10 4.30 0.161 0.169

F1 4.60 5.00 0.181 0.197

P 4.00 4.30 0.157 0.69

P1 4.00 4.40 0.157 0.173

S 30.10 30.30 1.185 1.193

Coolingmethod: bycondiction(C)
Recommended torque value: 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws

recommendedfor mountingthe packageon the heatsinkand the 4 screwsfor terminals).
The screwssuppliedwith thepackageare suitable for mountingon a board(or other types of terminals)

with a thicknessof 0.6 mm minand 2.2 mmmax.

Orderingtype Marking Package Weight Base qty Deliverymode

STTA9012TV1 STTA9012TV1 ISOTOP 27g.
STTA9012TV2 STTA9012TV2 ISOTOP 10 Tube

withoutscrews

10 Tube

EpoxymeetsUL94,V0

Informationfurnished is believedto be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such informationnor forany infringementof patents or other rights of third parties which may result fromitsuse. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap­proval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

 1999 STMicroelectronics - Printed in Italy- All rights reserved.

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - China - Finland - France - Germany - Hong Kong - India -Italy - Japan - Malaysia

Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.

http://www.st.com

8/8