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1/8June 2002
STGP10NB60SFP
N-CHANNEL 10A - 600V - TO-220FP
PowerMesh™ IGBT
(●) Pulse wi dt h l i mit ed by saf e o per at ing ar ea
■ HIGHT INPUT IMPEDANCE (VOLTAGE
DRIVEN)
■ LOW ON-VOLTAGE DROP
■ HIGH CURRENT CAPABILITY
■ OFF LOSSES INCLUDE TAIL CURRENT
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
™
IGBTs, with outstanding
performances. The suffix “S” identifies a family
optimized achieve minimum on-voltage drop for low
frequency applications (<1kHz).
APPLICATIONS
■ LIGHT DIMMER
■ STATIC RELAYS
■ MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
TYPE V
CES
V
CE(sat)
I
C
STGP10NB60SFP 600 < 1.7 V 10 A
Symbol Parameter Value Unit
V
CES
Collector-Em itter Voltage (VGS = 0)
600 V
V
ECR
Reverse Battery Protection 20 V
V
GE
Gate-Emitter Voltage ± 20 V
I
C
Collector Current (continuous) at TC = 25°C
20 A
I
C
Collector Current (continuous) at TC = 100°C
10 A
I
CM
(n)
Collector Current (pulsed) 80 A
P
TOT
Total Dissipation at TC = 25°C
31.5 W
Derating Factor 0.21 W/°C
T
stg
Storage Temperature –65 to 150 °C
T
j
Max. Operating Junction Temperature 150 °C
TO-220FP
1
2
3
INTERNAL SCHEMATIC DIAGRAM
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STGP10NB60SFP
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THERMA L D ATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-case Thermal Resistance Junction-case Max 4.7 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter Break-down
Voltage
IC = 250 µA, VGE = 0, 600 V
V
BR(CES)
Emitter Collector Break-down
Voltage
I
C
= 1 mA, VGE = 0, 20 V
I
CES
Collector cut-off Current
(V
GE
= 0)
V
CE
= Max Rating ,Tj =25 °C
VCE = Max Rating ,Tj =125 °C
10
100
µA
µA
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= ± 20V , VCE = 0 ± 100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
Gate Threshold Voltage VCE = VGE, IC = 250µA 2.5 5 V
V
CE(SAT)
Collector-Emitter Saturation
Voltage
VGE =15V, IC = 5 A, Tj= 25°C
VGE =15V, IC = 10 A, Tj= 25°C
VGE =15V, IC = 10 A, Tj= 125°C
1.15
1.35
1.25
1.7
V
V
V
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
Forward Transconductance
V
CE
= 25 V , IC=10 A
5S
C
ies
Input Capacitance
V
CE
= 25V, f = 1 MHz, VGE = 0
610 pF
C
oes
Output Capacitance 65 pF
C
res
Reverse Transfer
Capacitance
12 pF
Q
g
Gate Charge VCE = 400V, IC = 10 A,
VGE = 15V
33 nC
I
CL
Latching Current V
clamp
= 480V, RG= 1kΩ,
Tj= 125°C
20 A
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STGP10NB60SFP
SWITCHING ON
SWITCHING OFF
(●)Pulsed: P ul se duration = 300 µ s, duty cycle 1.5 %.
(1)Pulse wi dth limit ed by max. jun ct i on temper at ure.
(**)Losses Include Also the Tail
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time
V
CC
= 480 V, IC = 10 A
R
G
=1KΩ , VGE = 15 V
0.7 µs
t
r
Rise Time 0.46 µs
(di/dt)
on
Eon
Turn-on Current Slope
Turn-on Switching Losses
V
CC
= 480 V, IC = 10 A
R
G
=1KΩ, VGE = 15 V
8
0.6
A/µs
mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
c
Cross-over Time
V
clamp
= 480 V, IC = 10 A,
RGE = 1K Ω , VGE = 15 V
2.2 µs
tr(V
off
)
Off Voltage Rise Time 1.2 µs
t
f
Fall Time 1.2 µs
E
off
(**)
Turn-off Switching Loss 5.0 mJ
t
c
Cross-over Time
V
clamp
= 480 V, IC = 10 A,
RGE = 1KΩ , VGE = 15 V
Tj = 125 °C
3.8 µs
t
r(Voff
)
Off Voltage Rise Time 1.2 µs
t
f
Fall Time 1.9 µs
E
off
(**)
Turn-off Switching Loss 8.0 mJ
Thermal ImpedanceSwitching Off Safe Operating Area
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STGP10NB60SFP
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Gate Threshold Voltage vs Temperatur e
Transconductanc e
Transfer Characteristics
Output Characteristics
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
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STGP10NB60SFP
Off Losses vs Gate Resistance Off Losses vs Collector Current
Gate Charge vs Gate-Emitter Voltage
Capacitance Variations
Normalized Break-down Voltage vs Temp .
Off Losses vs Temperature
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STGP10NB60SFP
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Fig. 2: Test Circuit For Inductive Load SwitchingFig. 1: Gate Charge test Circuit
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STGP10NB60SFP
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
123
F2
F1
L7
L4
L5
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
TO-220FP MECHANICAL DATA
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STGP10NB60SFP
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consequences of use of su ch in formation nor for any in fringement of patents or other rights of third parties w hich may result from
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mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
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