Page 1
STP10NA40
STP10NA40FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
■ TYPICAL R
DS(on)
= 0.46 Ω
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
o
C
■ LOW INTRINSIC CAPACITANCES
■ GATE GHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low R
DS(on)
and gate charge, unequalled
ruggedness and superior switching performance.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWERSUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
TYPE V
DSS
R
DS(on)
I
D
STP 10NA40
STP 10NA40F I
400 V
400 V
<0.55Ω
<0.55Ω
10 A
6A
1
2
3
TO-220 ISOWATT220
November 1996
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
STP1 0NA40 STP 10NA40FI
V
DS
Drain - s ource Voltage (VGS=0) 400 V
V
DGR
Drain - gat e Voltage (RGS=20kΩ)400V
V
GS
Gate-source Voltage ± 30 V
I
D
Drain Current (continuous) at Tc=25oC106A
I
D
Drain Current (continuous) at Tc=100oC6.3 3.8A
I
DM
(•) Drain Current (pulsed) 40 40 A
P
tot
Total Di ssipation at Tc=25oC 125 45 W
Derating F actor 1 0.36 W/
o
C
V
ISO
Ins ulation Withs t and Voltage (DC) 2000 V
T
stg
St or a ge Tem perature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
(•) Pulsewidth limited bysafe operating area
1
2
3
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THERMAL DATA
TO-220 ISOW ATT 220
R
thj-case
Thermal Resistance J unction- c ase Max 1 2.78
o
C/W
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junc tion-am bie nt Max
Thermal Resistance Cas e-sink Typ
Maximum Lead T emperature For Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)
10 A
E
AS
Single Pul se Avalanche Ener gy
(starti ng T
j
=25oC, ID=IAR,VDD=50V)
500 mJ
E
AR
Repetitive Avalanc he Energ y
(pulse width limited by Tjmax, δ <1%)
20 mJ
I
AR
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(Tc= 100oC, pulse width limited by Tjmax, δ <1%)
6.3 A
ELECTRICAL CHARACTERISTICS (T
case
=25oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
(BR)DSS
Drain - s ource
Break d own Volta ge
ID=250µAVGS= 0 400 V
I
DSS
Zer o Gate Volt age
Drain Current (VGS=0)
VDS=MaxRating
VDS= Max Rating x 0 .8 Tc=125oC
25
250
µA
µA
I
GSS
Gat e- body Leak age
Current (V
DS
=0)
V
GS
= ± 30 V ± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
GS(th)
Gate Threshold Voltage VDS=VGSID=250µA 2.25 3 3.75 V
R
DS(on)
St at ic Drain-s our ce O n
Resistance
VGS=10V ID=5A 0.46 0.55 Ω
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
VGS=10V
10 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
g
fs
(∗)Forward
Tr ansconductance
VDS>I
D(on)xRDS(on)maxID
=5A 5 7.2 S
C
iss
C
oss
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VDS=25V f=1MHz VGS= 0 1180
200
55
1600
260
75
pF
pF
pF
STP10NA40/FI
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
d(on)
t
r
Turn-on T im e
Rise Time
VDD=200V ID=5A
RG=47 Ω VGS=10V
(see test circuit, figure 3)
35
11550155
ns
ns
(di/dt)
on
Turn-on C urrent S lope VDD=320V ID=10A
RG=47 Ω VGS=10V
(see test circuit, figure 5)
250 A/µs
Q
g
Q
gs
Q
gd
Total Gate Charge
Gat e- Source Charge
Gate-Drain Charge
VDD= 320 V ID=10A VGS=10V 54
8
27
75 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
r(Voff)
t
f
t
c
Off -voltage R ise Time
Fall Time
Cross-over Time
VDD=320V ID=10A
RG=47 Ω VGS=10V
(see test circuit, figure 5)
75
30
120
105
45
160
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
I
SD
I
SDM
(•)
Source-drain Current
Source-drain Current
(pulsed)
10
40
A
A
V
SD
(∗) Forward On Voltage ISD=10A VGS=0 1.6 V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD= 10 A di/dt = 100 A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)
470
6.5
27.5
ns
µC
A
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Areas for TO-220 Safe Operating Areas for ISOWATT220
STP10NA40/FI
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Thermal ImpedeanceFor TO-220
Derating Curve For TO-220
Output Characteristics
Thermal Impedance For ISOWATT220
Derating Curve For ISOWATT220
Transfer Characteristics
STP10NA40/FI
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Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-sourceVoltage Capacitance Variations
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs
Temperature
STP10NA40/FI
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Turn-on Current Slope Turn-off Drain-source Voltage Slope
Cross-over Time Switching Safe Operating Area
Accidental Overload Area Source-drain Diode ForwardCharacteristics
STP10NA40/FI
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Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Reverse Recovery Time
Fig. 1: Unclamped Inductive Load Test Circuits
STP10NA40/FI
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DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP10NA40/FI
8/10
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DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
Ø
F
L3
G1
123
F2
F1
L7
L4
ISOWATT220 MECHANICAL DATA
P011G
STP10NA40/FI
9/10
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSONMicroelectronics assumes no responsability for the
consequences of use of such informationnor for any infringement of patents or other rightsof third parties which mayresults from its use. No
licenseis granted by implication orotherwise under any patent or patentrights ofSGS-THOMSONMicroelectronics. Specifications mentioned
in thispublication aresubject to change withoutnotice. Thispublication supersedes andreplacesall informationpreviously supplied.
SGS-THOMSONMicroelectronics products are notauthorized for use as critical components in lifesupport devices or systemswithout express
writtenapproval ofSGS-THOMSONMicroelectonics.
1996 SGS-THOMSON Microelectronics -Printedin Italy - All Rights Reserved
SGS-THOMSONMicroelectronics GROUPOF COMPANIES
Australia- Brazil -Canada -China - France- Germany - Hong Kong - Italy -Japan- Korea-Malaysia - Malta- Morocco- TheNetherlands -
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.
STP10NA40/FI
10/10
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