STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ DC MOTOR CONTROL (DISK DRIVES, etc.)
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
V
DS
V
DGR
V
GS
I
D
I
D
(
I
DM
(1)Total Dissipation at T
P
tot
dv/dt
E
AS
T
stg
T
j
(
Pulse widt h l i m i ted by safe operating area.
•)
(1)
Related to Rthj-l
.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
60V
60V
Gate- source Voltage± 16V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
•)
Drain Current (pulsed)8A
= 25°C
C
2A
1.2A
3W
Derating Factor8W/°C
(2)
Peak Diode Recovery voltage slope6V/ns
(3)
Single Pulse Avalanche Energy200mJ
Storage Temperature
Max. Operating Junction Temperature°C
(2) ISD ≤2A, di/dt ≤100A/ µ s , VDD ≤ V
(3) Starting Tj = 25 oC, ID = 2A, VDD = 30V
-55 to 150
(BR)DSS
, Tj ≤ T
°C
JMAX
1/8November 2002
Page 2
STN2NF06L
THERMA L D ATA
Rthj-pcb
Rthj-pcb
T
l
Thermal Resistance Junction-PCB(1 inch2 copper board)
Thermal Resistance Junction-PCB (min. footprint)
Maximum Lead Temperature For Soldering Purpose
50
90
260
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
SymbolParameterTest ConditionsMin.Typ.Max.Unit
= 250 µA, VGS = 0
V
(BR)DSS
Drain-source
I
D
60V
Breakdown Voltage
= Max Rating
V
DS
= Max Rating TC = 125°C
V
DS
= ± 16 V
V
GS
1
10
±100nA
ON
(*)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
SymbolParameterTest ConditionsMin.Typ.Max.Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
= V
DS
GS
= 10 VID = 1 A
V
GS
= 5 VID = 1 A
V
GS
ID = 250 µA
1V
0.1
0.12
0.12
0.14
DYNAMIC
SymbolParameterTest ConditionsMin.Typ.Max.Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 15 V ID = 1 A
DS
= 25V f = 1 MHz VGS = 0
V
DS
3S
360
55
25
µA
µA
Ω
Ω
pF
pF
pF
2/8
Page 3
STN2NF06L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SymbolParameterTest ConditionsMin.Typ.Max.Unit
= 30 VID = 1 A
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
SymbolParameterTest ConditionsMin.Typ.Max.Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
SOURCE DRAIN DIODE
SymbolParameterTest ConditionsMin.Typ.Max.Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by s afe operating area.
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
V
DD
= 4.7
R
Ω
G
VGS = 4.5 V
(Resistive Load, Figure 3)
= 48 V ID= 2 A VGS= 5 V
V
DD
= 30 V ID = 1 A
V
DD
= 4.7Ω, V
R
G
GS
= 4.5 V
(Resistive Load, Figure 3)
I
= 2 A VGS = 0
SD
I
= 2 Adi/dt = 100A/µs
SD
= 20 VTj = 150°C
V
DD
(see test circuit, Figure 5)
10
20
5.6
1.2
2.6
17
6
28
31
2.2
7.6nC
2
8
1.3V
ns
ns
nC
nC
ns
ns
A
A
ns
nC
A
Saf e Operating Are a
Thermal Impedance Junction-lead
3/8
Page 4
STN2NF06L
Output CharacteristicsTransfer Characteristics
TransconductanceStatic Drain-source On Resistance
Gate Charge vs Gate-source VoltageCapacitance Variations
4/8
Page 5
STN2NF06L
Normalized Gate Threshold Voltage vs TemperatureNormalized on Resistance vs Temperature
Source-drain Diode Forward CharacteristicsNormalized Breakdown Voltage vs Temperature.
..
5/8
Page 6
STN2NF06L
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test CircuitFig. 2: Unclamped Induct ive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
6/8
Page 7
SOT-223 MECHANICAL DATA
STN2NF06L
DIM.
MIN.TYP.MAX.MIN.TYP.MAX.
a2.272.32.3389.490.691.7
b4.574.64.63179.9181.1182.3
c0.20.40.67.915.723.6
d 0.630.650.6724.825.626.4
e11.51.61.759.16366.9
e40.3212.6
f2.933.1114.2118.1122.1
g0.670.70.7326.427.628.7
l16.777.3263.8275.6287.4
l23.53.53.7137.8137.8145.7
L6.36.56.7248255.9263.8
mmmils
l1
e1
L
a
b
f
C
B
C
E
g
d
l2
c
e4
P008B
7/8
Page 8
STN2NF06L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or patent r i ght s of STMi croelectr oni cs. Spec i fications mentioned i n this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics product s are not
authorized for use as cri tical comp onents in lif e support devi ces or systems without express written approva l of STMicroe l ectronics.
The ST logo is registered trademark of STMicroelectronics
2002 STMi croelectronics - All Ri ghts Rese rved
All other na m es are the property of their respective owners.
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STMicroelectronics GROUP OF COMPANIES
http:// www.st.co m
8/8
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