Datasheet STN2NF06L Datasheet (SGS Thomson Microelectronics)

Page 1
STN2NF06L
N-CHANNEL 60V - 0.1 - 2A SOT-223
STripFET™ II POWER MOSFET
TYPE
V
DSS
STN2NF06L 60 V <0.12
TYPICAL R
100% AVALANCHE TESTED
AVALANCHE RUGGED TECHNOLOGY
LOW THRESHOLD DRIVE
(on) = 0.1
DS
R
DS(on)
I
D
2 A
DESCRIPTION
This Power MOSFET is the latest dev elo pment of
STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on­resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark­able manufacturing reproducibility.
APPLICATIONS
DC MOTOR CONTROL (DISK DRIVES, etc.)
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
(
I
DM
(1) Total Dissipation at T
P
tot
dv/dt
E
AS
T
stg
T
j
(
Pulse widt h l i m i ted by safe operating area.
•)
(1)
Related to Rthj -l
.
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ)
60 V 60 V
Gate- source Voltage ± 16 V
Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C
•)
Drain Current (pulsed) 8 A
= 25°C
C
2A
1.2 A
3W
Derating Factor 8 W/°C
(2)
Peak Diode Recovery voltage slope 6 V/ns
(3)
Single Pulse Avalanche Energy 200 mJ Storage Temperature Max. Operating Junction Temperature °C
(2) ISD ≤2A, di/dt ≤100A/ µ s , VDD ≤ V
(3) Starting Tj = 25 oC, ID = 2A, VDD = 30V
-55 to 150
(BR)DSS
, Tj ≤ T
°C
JMAX
1/8November 2002
Page 2
STN2NF06L
THERMA L D ATA
Rthj-pcb Rthj-pcb
T
l
Thermal Resistance Junction-PCB(1 inch2 copper board) Thermal Resistance Junction-PCB (min. footprint) Maximum Lead Temperature For Soldering Purpose
50 90
260
°C/W °C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 250 µA, VGS = 0
V
(BR)DSS
Drain-source
I
D
60 V
Breakdown Voltage
= Max Rating
V
DS
= Max Rating TC = 125°C
V
DS
= ± 16 V
V
GS
1
10
±100 nA
ON
(*)
I
DSS
I
GSS
Zero Gate Voltage Drain Current (V
GS
Gate-body Leakage Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage Static Drain-source On
Resistance
= V
DS
GS
= 10 V ID = 1 A
V
GS
= 5 V ID = 1 A
V
GS
ID = 250 µA
1V
0.1
0.12
0.12
0.14
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance Input Capacitance
Output Capacitance Reverse Transfer Capacitance
V
= 15 V ID = 1 A
DS
= 25V f = 1 MHz VGS = 0
V
DS
3S
360
55 25
µA µA
Ω Ω
pF pF pF
2/8
Page 3
STN2NF06L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 30 V ID = 1 A
t
d(on)
Q
Q
Q
t
r
g gs gd
Turn-on Time Rise Time
Total Gate Charge Gate-Source Charge Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off Delay Time Fall Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by s afe operating area.
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage Reverse Recovery Time
Reverse Recovery Charge Reverse Recovery Current
V
DD
= 4.7
R
G
VGS = 4.5 V
(Resistive Load, Figure 3)
= 48 V ID= 2 A VGS= 5 V
V
DD
= 30 V ID = 1 A
V
DD
= 4.7Ω, V
R
G
GS
= 4.5 V
(Resistive Load, Figure 3)
I
= 2 A VGS = 0
SD
I
= 2 A di/dt = 100A/µs
SD
= 20 V Tj = 150°C
V
DD
(see test circuit, Figure 5)
10 20
5.6
1.2
2.6
17
6
28 31
2.2
7.6 nC
2 8
1.3 V
ns ns
nC nC
ns ns
A A
ns
nC
A
Saf e Operating Are a
Thermal Impedance Junction-lead
3/8
Page 4
STN2NF06L
Output Characteristics Transfer Characteristics
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
4/8
Page 5
STN2NF06L
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature.
. .
5/8
Page 6
STN2NF06L
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Induct ive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
6/8
Page 7
SOT-223 MECHANICAL DATA
STN2NF06L
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
a 2.27 2.3 2.33 89.4 90.6 91.7
b 4.57 4.6 4.63 179.9 181.1 182.3
c 0.2 0.4 0.6 7.9 15.7 23.6
d 0.630.650.6724.825.626.4
e1 1.5 1.6 1.7 59.1 63 66.9
e4 0.32 12.6
f 2.9 3 3.1 114.2 118.1 122.1
g 0.67 0.7 0.73 26.4 27.6 28.7
l1 6.7 7 7.3 263.8 275.6 287.4
l2 3.5 3.5 3.7 137.8 137.8 145.7
L 6.3 6.5 6.7 248 255.9 263.8
mm mils
l1
e1
L
a
b
f
C
B
C
E
g
d
l2
c
e4
P008B
7/8
Page 8
STN2NF06L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implic ation or otherwise under any patent or patent r i ght s of STMi croelectr oni cs. Spec i fications mentioned i n this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics product s are not authorized for use as cri tical comp onents in lif e support devi ces or systems without express written approva l of STMicroe l ectronics.
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