Page 1
®
N - CHANNEL 100V - 0.33 Ω - 2A - SOT-223
TYPE V
DSS
STN2NE10 100 V < 0.4 Ω 2 A
■
TYPICAL R
■
EXCEPTIONAL dv/dt CAPABILITY
■
AVALANCHE RUGG ED TECHNOLO GY
■
100 % AVALANCHE TESTED
■
APPLICATION ORIENTED
DS(on)
= 0.33
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique "Single Feature
Size" stip-based process. The resulting transistor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■
DC MOTOR CONTROL (DISK DRIVES,etc.)
■
DC-DC & DC-AC CONVERTERS
■
SYNCHRONOU S RECTIFICAT ION
Ω
R
DS(on)
I
D
STN2NE10
STripFET POWER MOSFET
PRELIMINARY DATA
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt(
T
(•) Pulse width limited by safe operating area (1) ISD ≤ 7 A, di/dt ≤ 200 A/µs, VDD ≤ V
New RDS (on) spec. starting from JULY 98
January 1999
Drain-source Voltage (VGS = 0) 10 0 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Current (continuous) at Tc = 25 oC2A
D
I
Drain Current (continuous) at Tc = 100 oC1.3A
D
100 V
(•) Drain Current (pulsed) 8 A
Total Dissipation at Tc = 25 oC2.5W
tot
Derating Factor 0.02 W/
) Peak Diode Recovery voltage slope 6 V/ns
1
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
, Tj ≤ T
(BR)DSS
JMAX
o
C
o
C
o
C
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Page 2
STN2NE10
THERMAL DATA
R
thj-pcb
R
thj-amb
Thermal Resistance Junction-PC Board Max
Thermal Resistance Junction-ambient Max
(Surface Mounted)
T
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERIST ICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
max)
j
DD
= 25 V)
50
60
260
2A
20 mJ
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
100 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
V
= ± 20 V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
= VGS ID = 250 µA
DS
234V
VGS = 10 V ID = 1A 0.33 0.4 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
2A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 1 A 1 1.8 S
= 0 V 305
GS
45
21
µA
µA
pF
pF
pF
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Page 3
STN2NE10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time
Rise Time
t
r
VDD = 50 V ID = 35 A
= 4.7 Ω VGS = 10 V
R
G
(Resistive Load, see fig. 3)
Q
Q
Q
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
VDD = 80 V ID = 7 A V
= 10 V 14
GS
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
Fall Time
t
f
VDD = 50 V ID = 3.5 A
=4.7 Ω VGS = 10 V
R
G
(Resistive Load, see fig. 3)
t
r(Voff)
t
t
Off-voltage Rise Time
Fall Time
f
Cross-over Time
c
V
= 16 V ID = 80 A
clamp
= 4.7 Ω VGS = 10 V
R
G
(Inductive Load, see fig. 5)
SOURCE DRAIN DIODE
7
17
19 nC
6
4
25
7
7
8
16
ns
ns
nC
nC
ns
ns
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
2
8
I
SDM
I
SD
Source-drain Current
(•)
Source-drain Current
(pulsed)
V
(∗) Forward On Voltage ISD = 2 A VGS = 0 1.5 V
SD
t
Q
Reverse Recovery
rr
Time
Reverse Recovery
rr
I
= 7 A di/dt = 100 A/µs
SD
V
= 30 V
DD
(see test circuit, fig. 5)
75
210
Charge
I
RRM
Reverse Recovery
5.5
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
A
A
ns
C
µ
A
3/5
Page 4
STN2NE10
SOT-223 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
a 2.27 2.3 2.33 89.4 90.6 91.7
b 4.57 4.6 4.63 179.9 181.1 182.3
c 0.2 0.4 0.6 7.9 15.7 23.6
d 0.63 0.65 0.67 24.8 25.6 26.4
e1 1.5 1.6 1.7 59.1 63 66.9
e4 0.32 12.6
f 2.9 3 3.1 114.2 118.1 122.1
g 0.67 0.7 0.73 26.4 27.6 28.7
l1 6.7 7 7.3 263.8 275.6 287.4
l2 3.5 3.5 3.7 137.8 137.8 145.7
L 6.3 6.5 6.7 248 255.9 263.8
mm mils
L
e1
a
b
f
C
l1
B
C
E
g
d
l2
c
e4
P008B
4/5
Page 5
STN2NE10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any in fringe ment o f patents or other rig hts of third par ties wh ich may result from its u se. N o li cen se is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized f or use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1998 STMicroelectro nics – Printed in Italy – All Rights Reserved
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