(•) Pulse width limited by safe operating area (*) Limited by package
March 1996
Drain-source Voltage (VGS = 0)60V
DS
Drain- gate Voltage (RGS = 20 kΩ)60V
DGR
Gate-source Voltage± 20V
GS
(*)Drain Current (continuous) at Tc = 25 oC2A
(*)Drain Current (continuous) at Tc = 100 oC1.3A
(•)Drain Current (pulsed)8A
Total Dissipation at Tc = 25 oC2.7W
tot
Derating Factor0.022W/
Storage Temperature-65 to 150
stg
T
Max. Operating Junction Temperature150
j
o
C
o
C
o
C
1/5
Page 2
STN2N06
THERMAL DATA
R
thj-pcb
R
thj-amb
Thermal Resistance Junction-PC Board Max
Thermal Resistance Junction-ambient Max
(Surface Mounted)
T
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERI S TICS
SymbolParameterMax ValueUnit
I
AR
E
E
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
Repetitive Avalanche Energy
AR
= 25 oC, ID = IAR, V
j
(pulse width limited by T
max, δ < 1%)
j
DD
max, δ < 1%)
j
Avalanche Current, Repetitive or Not-Repetitive
(T
= 100 oC, pulse width limited by Tj max, δ < 1%)
c
= 25 V)
46
60
260
2A
40mJ
10mJ
1.3A
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
SymbolParameterTest ConditionsMin.Typ.Max.Unit
V
(BR)DSS
Drain-source
ID = 250 µA V
= 060V
GS
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating x 0.8 Tc = 125 oC
DS
= ± 20 V± 100nA
V
GS
250
1000µAµA
ON (∗)
SymbolParameterTest ConditionsMin.Typ.Max.Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage V
Static Drain-source On
Resistance
= VGS ID = 250 µA234V
DS
VGS = 10 V ID = 1 A
V
= 10 V ID = 1 A Tc = 100oC
GS
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
0.210.25
0.5
2A
DYNAMIC
SymbolParameterTest ConditionsMin.Typ.Max.Unit
g
(∗)Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 1 A0.81.5S
= 0 V260
GS
90
30
340
120
40
Ω
Ω
pF
pF
pF
2/5
Page 3
STN2N06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING O N
SymbolParameterTest ConditionsMin.Typ.Max.Unit
t
d(on)
(di/dt)
Q
Q
Q
SWITCHING O F F
SymbolParameterTest ConditionsMin.Typ.Max.Unit
t
r(Voff)
t
SOURCE DRAIN DIO DE
SymbolParameterTest ConditionsMin.Typ.Max.Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Turn-on Time
Rise Time
t
r
Turn-on Current SlopeV
on
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
Off-voltage Rise Time
Fall Time
t
f
Cross-over Time
c
Source-drain Current
(•)
Source-drain Current
V
= 30 V ID = 4 A
DD
R
= 47 Ω VGS = 10 V
G
= 48 V ID = 8 A
DD
R
= 47 Ω VGS = 10 V
G
V
= 48 V ID = 8 A V
DD
V
= 48 V ID = 8 A
DD
R
= 47 Ω VGS = 10 V
G
= 10 V13
GS
14
75
20
100
240A/µs
20nC
7
4
16
22
45
25
30
60
2
8
(pulsed)
(∗)Forward On VoltageISD = 2 A VGS = 01.5V
Reverse Recovery
rr
Time
Reverse Recovery
rr
I
= 8 A di/dt = 100 A/µs
SD
V
= 25 V Tj = 150 oC
DD
70
0.18
Charge
Reverse Recovery
5
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
3/5
Page 4
STN2N06
SOT223 MECHANICAL DATA
DIM.
MIN.TYP.MAX.MIN.TYP.MAX.
a2.272.32.3389.490.691.7
b4.574.64.63179.9181.1182.3
c0.20.40.67.915.723.6
d 0.630.650.6724.825.626.4
e11.51.61.759.16366.9
e40.3212.6
f2.933.1114.2118.1122.1
g0.670.70.7326.427.628.7
l16.777.3263.8275.6287.4
l23.53.53.7137.8137.8145.7
L6.36.56.7248255.9263.8
mmmils
l1
e1
L
a
b
f
C
B
C
E
g
d
l2
c
e4
P008B
4/5
Page 5
STN2N06
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of pat e nt s or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-TH OMSON Microelectronics. Specificati ons mentione d
in this publication are subject to cha nge wi t hout no t ice. This p u bli ca tion su p e rsed e s and r epla ces al l infor mat i on pr ev io us ly supplied.
SGS-THOMSON Microelectronics products are not authorize d for use as critical components in life support devices or systems without express
written approval of SGS-THOMSO N M icroele cton ics.