Page 1
STN1NB80
N - CHANNEL 800V - 16
TYPE V
ST N1N B 80 80 0 V < 20 Ω 0.2 A
■ TYPICALR
■ EXTREMELYHIGH dv/dt CAPABILITY
■ 100%AVALANCHETESTED
■ VERYLOW INTRINSIC CAPACITANCES
■ GATECHARGE MINIMIZED
DS(on)
DSS
=16Ω
DESCRIPTION
Using the latest high voltageMESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
per area, exceptional avalanche
DS(on)
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■ SWITCHMODE POWER SUPPLIES(SMPS)
■ AC ADAPTORSAND BATTERYCHARGERS
FOR HANDHELD EQUIPMENT
R
DS(on)
I
D
Ω
- 0.2A - SOT-223
PowerMESH MOSFET
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/ dt(
T
(•) Pulsewidth limited by safe operating area (1)ISD≤ 0.2 A, di/dt ≤ 200 A/µs, VDD≤ V
November 1999
Drain-source Voltage (VGS=0) 800 V
DS
Dra in- gate Volt age (RGS=20kΩ)
DGR
Gate -sourc e Voltage ± 30 V
GS
I
Drain Current (co ntinuous) at Tc=25oC0.2A
D
I
Drain Current (co ntinuous) at Tc=100oC0.12A
D
(•) Drain Current (pu lsed) 0.8 A
Total Dissipation at Tc=25oC2.9W
tot
Derating Factor 0.02 W/
1) P eak Diode Recove ry voltage slop e 4 V/ns
St orage Tempe rature -65 to 150
stg
T
Max. Op era t ing J unction Temperatu r e 150
j
800 V
,Tj≤T
(BR)DSS
JMAX
o
C
o
C
o
C
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STN1NB80
THERMAL DATA
R
thj-case
Rthj-a mb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Para meter Max V al ue Uni t
I
AR
E
Ther mal Res is t an c e Juncti on-cas e Max
Ther mal Res is t an c e Juncti on-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Tem per at ure For S old er ing Pur p ose
l
Avalanche Curr ent, Repet itiv e or Not-Repetitive
(pulse width limited by T
Single Pu lse Avalanche En ergy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
43
60
0.7
260
0.2 A
200 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
800 V
Break d own Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Cu rr ent (V
GS
Gat e- b ody Leak a ge
Current (V
DS
=0)
=0)
V
=MaxRating
DS
= Max Rating Tc=125oC
V
DS
= ± 30 V
V
GS
1
50
± 100 nA
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
DS=VGSID
= 250 µA
345V
Voltage
R
DS(on)
Static Drain-source O n
VGS=10V ID=0.2 A 16 20
Resistanc e
I
D(on)
On Stat e Dra in Curr ent VDS>I
D(on)xRDS(on)max
0.2 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansconduc tance
C
C
C
Input Cap acitan ce
iss
Out put Capac it ance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=0.2A 0.1 0.4 S
VDS=25V f=1MHz VGS=0 140
22
2.5
µA
µ
Ω
pF
pF
pF
A
2/8
Page 3
STN1NB80
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay Time
r
Rise Time
t
VDD= 400 V ID=0.5A
R
=4.7
G
Ω
VGS=10V
8
10
(see t est circuit, figure 3)
Q
Q
Q
Total Gate Charge
g
Gat e- Source Char ge
gs
Gate-Drain Charge
gd
VDD= 640 V ID=1.1 A VGS=10V 10
5
3.6
14 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off -voltage R ise T ime
Fall Time
f
Cross-ov er Ti m e
c
VDD= 640 V ID=1.1 A
=4.7 ΩVGS=10V
R
G
(see t est circuit, figure 5)
40
16
50
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operatingarea
Source-drain Curr ent
(•)
Source-drain Curr ent
0.2
0.8
(pulsed)
(∗) Forwar d On Voltage ISD=0.2 A VGS=0 1.6 V
Reverse Recov ery
rr
Time
Reverse Recov ery
rr
=1.1A di/dt=100A/µs
I
SD
= 100 V Tj=150oC
V
DD
(see t est circuit, figure 5)
460
1150
Charge
Reverse Recov ery
5
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
SafeOperating Area ThermalImpedance
3/8
Page 4
STN1NB80
OutputCharacteristics
Transconductance
TransferCharacteristics
Static Drain-sourceOn Resistance
Gate Charge vs Gate-sourceVoltage
4/8
CapacitanceVariations
Page 5
STN1NB80
Normalized GateThresholdVoltage vs
Temperature
Source-drainDiode Forward Characteristics
Normalized On Resistance vsTemperature
5/8
Page 6
STN1NB80
Fig. 1:
UnclampedInductive Load TestCircuit
Fig. 3: SwitchingTimes Test CircuitsFor
ResistiveLoad
Fig. 2:
UnclampedInductive Waveform
Fig. 4: Gate Chargetest Circuit
Fig. 5:
Test Circuit For InductiveLoad Switching
And Diode Recovery Times
6/8
Page 7
SOT-223MECHANICALDATA
STN1NB80
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
a 2.27 2.3 2.33 89.4 90.6 91.7
b 4.57 4.6 4.63 179.9 181.1 182.3
c 0.2 0.4 0.6 7.9 15.7 23.6
d 0.63 0.65 0.67 24.8 25.6 26.4
e1 1.5 1.6 1.7 59.1 63 66.9
e4 0.32 12.6
f 2.9 3 3.1 114.2 118.1 122.1
g 0.67 0.7 0.73 26.4 27.6 28.7
l1 6.7 7 7.3 263.8 275.6 287.4
l2 3.5 3.5 3.7 137.8 137.8 145.7
L 6.3 6.5 6.7 248 255.9 263.8
mm mils
L
l2
e1
a
b
f
C
l1
B
C
E
g
d
c
e4
P008B
7/8
Page 8
STN1NB80
Information furnishedis believedto beaccurate and reliable.However, STMicroelectronics assumesno responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are
subjecttochange without notice. This publicationsupersedesandreplaces all information previouslysupplied.STMicroelectronics products
are not authorized for use as critical components in life support devicesor systemswithout express written approval of STMicroelectronics.
The STlogo is atrademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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8/8
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