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STN1HNC60
N-CHANNEL 600V - 7Ω - 0.4A - SOT-223
PowerMesh™II MOSFET
TYPE V
STN1HNC60 600 V < 8
■ TYPICAL R
■ EXTREMELY HIGH dv /d t C APABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
DS
DSS
(on) = 7Ω
R
DS(on)
I
D
Ω
0.4 A
DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
™II is the evolution of the first
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lea ding edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
■ AC ADAPTORS AND BATTERY CHAR GE R S
■ SWITH MODE POWER SUPPLI ES ( SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt Peak Diode Recovery voltage slope 3.5 V/ns
T
stg
T
j
(•)Pu l se width limite d by safe operat i ng area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ±30 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(1)
Drain Current (pulsed) 1.6 A
Total Dissipation at TC = 25°C
Derating Factor 0.02 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(1)ISD ≤0.4A, di/ dt ≤100A/µs, VDD ≤ V
600 V
600 V
0.4 A
0.25 A
2.5 W
(BR)DSS
, Tj ≤ T
JMAX
1/8May 2001
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STN1HNC60
THERMA L D ATA
Rthj-pcb
Rthj-amb
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Thermal Resistance Junction-PC Board
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID = IAR, VDD = 50 V)
j
ID = 250 µA, VGS = 0 600 V
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±30V ±100 nA
GS
50
60
300
0.4 A
100 mJ
1µA
50 µA
°C/W
°C/W
°C
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS, ID = 250µA
DS
VGS = 10V, ID =0.7 A
234V
78
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 26 pF
Reverse Transfer
Capacitance
ID= 0.7A
V
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
1.25 S
160 pF
3.8 pF
Ω
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STN1HNC60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge 2.8 nC
Gate-Drain Charge 2.8 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 9 ns
Cross-over Time 34 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.
2. Pulse width li mited by safe operating area .
Source-drain Current 0.4 A
(2)
Source-drain Current (pulsed) 1.6 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 950 nC
Reverse Recovery Current 3.8 A
VDD = 300V, ID = 0.7A
RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)
V
= 480V, ID = 1.4A,
DD
VGS = 10V
V
= 480V, ID = 1.4A,
DD
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
ISD = 0.4 A, VGS = 0
I
= 1.4A, di/dt = 100A/µs,
SD
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
8
8
8.5 11.5 nC
25 ns
1.6 V
500 ns
ns
ns
Thermal Imp e danceSafe Operating Area
3/8
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STN1HNC60
Output Characteristics Transfer Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Static Drain-source On Resistance
Capacitance Variations
4/8
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Source-drain Diode Forward Characteristics
STN1HNC60
Normalized On Resistance vs Temperatur eNormalized Gate Thereshold Voltage vs Temp.
5/8
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STN1HNC60
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
6/8
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SOT-223 MECHANICAL DATA
STN1HNC60
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.80 0.071
B 0.60 0.70 0.80 0.024 0.027 0.031
B1 2.90 3.00 3.10 0.114 0.118 0.122
c 0.24 0.26 0.32 0.009 0.010 0.013
D 6.30 6.50 6.70 0.248 0.256 0.264
e 2.30 0.090
e1 4.60 0.181
E 3.30 3.50 3.70 0.130 0.138 0.146
H 6.70 7.00 7.30 0.264 0.276 0.287
V10
A1 0.02
mm inch
o
10
o
P008B
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STN1HNC60
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such informa tion n or for an y infring ement of patent s or other rig hts of third part ies which may resu lt from its use . No l i cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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